JP2011258751A5 - - Google Patents

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Publication number
JP2011258751A5
JP2011258751A5 JP2010131964A JP2010131964A JP2011258751A5 JP 2011258751 A5 JP2011258751 A5 JP 2011258751A5 JP 2010131964 A JP2010131964 A JP 2010131964A JP 2010131964 A JP2010131964 A JP 2010131964A JP 2011258751 A5 JP2011258751 A5 JP 2011258751A5
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JP
Japan
Prior art keywords
film
substrate
semiconductor device
electrode pads
peeling
Prior art date
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Granted
Application number
JP2010131964A
Other languages
English (en)
Japanese (ja)
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JP2011258751A (ja
JP5540911B2 (ja
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Publication date
Application filed filed Critical
Priority claimed from JP2010131964A external-priority patent/JP5540911B2/ja
Priority to JP2010131964A priority Critical patent/JP5540911B2/ja
Priority to TW100104251A priority patent/TWI431731B/zh
Priority to US13/025,633 priority patent/US8390121B2/en
Priority to DE102011075365.6A priority patent/DE102011075365B4/de
Priority to KR1020110052558A priority patent/KR20110134830A/ko
Priority to CN201110165501.1A priority patent/CN102280416B/zh
Publication of JP2011258751A publication Critical patent/JP2011258751A/ja
Publication of JP2011258751A5 publication Critical patent/JP2011258751A5/ja
Publication of JP5540911B2 publication Critical patent/JP5540911B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010131964A 2010-06-09 2010-06-09 半導体装置 Active JP5540911B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010131964A JP5540911B2 (ja) 2010-06-09 2010-06-09 半導体装置
TW100104251A TWI431731B (zh) 2010-06-09 2011-02-09 半導體裝置及其製造方法
US13/025,633 US8390121B2 (en) 2010-06-09 2011-02-11 Semiconductor device and method of manufacture thereof
DE102011075365.6A DE102011075365B4 (de) 2010-06-09 2011-05-05 Halbleitervorrichtung und Herstellungsverfahren hierfür
KR1020110052558A KR20110134830A (ko) 2010-06-09 2011-06-01 반도체장치와 그 제조방법
CN201110165501.1A CN102280416B (zh) 2010-06-09 2011-06-08 半导体装置及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010131964A JP5540911B2 (ja) 2010-06-09 2010-06-09 半導体装置

Publications (3)

Publication Number Publication Date
JP2011258751A JP2011258751A (ja) 2011-12-22
JP2011258751A5 true JP2011258751A5 (enExample) 2013-03-14
JP5540911B2 JP5540911B2 (ja) 2014-07-02

Family

ID=45020205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010131964A Active JP5540911B2 (ja) 2010-06-09 2010-06-09 半導体装置

Country Status (6)

Country Link
US (1) US8390121B2 (enExample)
JP (1) JP5540911B2 (enExample)
KR (1) KR20110134830A (enExample)
CN (1) CN102280416B (enExample)
DE (1) DE102011075365B4 (enExample)
TW (1) TWI431731B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103890932B (zh) * 2011-11-22 2017-03-29 富士通株式会社 电子部件及其制造方法
US9025294B2 (en) * 2012-02-24 2015-05-05 Hamilton Sundstrand Corporation System and method for controlling solid state circuit breakers
US9082681B2 (en) 2013-03-29 2015-07-14 Stmicroelectronics Pte Ltd. Adhesive bonding technique for use with capacitive micro-sensors
US9176089B2 (en) 2013-03-29 2015-11-03 Stmicroelectronics Pte Ltd. Integrated multi-sensor module
US9618653B2 (en) 2013-03-29 2017-04-11 Stmicroelectronics Pte Ltd. Microelectronic environmental sensing module
GB2514547A (en) * 2013-05-23 2014-12-03 Melexis Technologies Nv Packaging of semiconductor devices
US9000542B2 (en) * 2013-05-31 2015-04-07 Stmicroelectronics Pte Ltd. Suspended membrane device
US10429330B2 (en) 2016-07-18 2019-10-01 Stmicroelectronics Pte Ltd Gas analyzer that detects gases, humidity, and temperature
US10254261B2 (en) 2016-07-18 2019-04-09 Stmicroelectronics Pte Ltd Integrated air quality sensor that detects multiple gas species
US10557812B2 (en) 2016-12-01 2020-02-11 Stmicroelectronics Pte Ltd Gas sensors

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2649157B2 (ja) 1987-03-10 1997-09-03 三菱電機株式会社 半導体装置
JPH06104268A (ja) 1992-09-21 1994-04-15 Mitsubishi Electric Corp ゲッタリング効果を持たせた半導体基板およびその製造方法
JPH06267935A (ja) * 1993-03-12 1994-09-22 Mitsubishi Electric Corp 半導体装置の製造方法
JPH07297560A (ja) 1994-04-28 1995-11-10 Hitachi Ltd 多層プリント配線基板およびその実装構造体
JPH08178768A (ja) * 1994-12-20 1996-07-12 Matsushita Electric Ind Co Ltd 力学量センサ
JPH08316442A (ja) * 1995-05-24 1996-11-29 Mitsubishi Materials Corp Ｓｏｉ基板及びその製造方法
JP3050193B2 (ja) * 1997-11-12 2000-06-12 日本電気株式会社 半導体装置及びその製造方法
US6049365A (en) * 1998-05-07 2000-04-11 Mitsubishi Denki Kabushiki Kaisha Liquid crystal displaying apparatus with a converter not exposed to liquid crystal
JP2001119040A (ja) 1999-10-18 2001-04-27 Denso Corp 半導体力学量センサとその製造方法
DE10196531B4 (de) 2001-06-21 2005-06-30 Mitsubishi Denki K.K. Beschleunigungssensor und Herstellungsverfahren dafür
JP2003240797A (ja) * 2002-02-18 2003-08-27 Mitsubishi Electric Corp 半導体加速度センサ
JP4229122B2 (ja) 2003-05-26 2009-02-25 株式会社村田製作所 圧電電子部品、およびその製造方法、通信機
JP4608993B2 (ja) * 2004-08-06 2011-01-12 ソニー株式会社 微小電気機械素子とその製造方法、及び電子機器
JP2006310508A (ja) 2005-04-28 2006-11-09 Sanyo Electric Co Ltd 半導体装置およびその製造方法
DE102005028704B4 (de) 2005-06-20 2016-09-08 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterbauteils mit in Kunststoffgehäusemasse eingebetteten Halbleiterbauteilkomponenten
JP4633574B2 (ja) * 2005-08-08 2011-02-16 三菱電機株式会社 薄膜構造体およびその製造方法
JP2007274096A (ja) * 2006-03-30 2007-10-18 Yamaha Corp ダイヤフラム及びその製造方法
JP2007322271A (ja) * 2006-06-01 2007-12-13 Mitsubishi Electric Corp 慣性力センサ及びその製造方法
EP2065929A4 (en) * 2006-09-06 2011-07-06 Hitachi Metals Ltd SEMICONDUCTOR SENSOR DEVICE AND MANUFACTURING METHOD THEREFOR
JP5181452B2 (ja) 2006-09-29 2013-04-10 三菱電機株式会社 加速度センサ
JP2009016717A (ja) * 2007-07-09 2009-01-22 Mitsubishi Electric Corp 半導体装置およびその製造方法

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