JP2014521527A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2014521527A5 JP2014521527A5 JP2014524104A JP2014524104A JP2014521527A5 JP 2014521527 A5 JP2014521527 A5 JP 2014521527A5 JP 2014524104 A JP2014524104 A JP 2014524104A JP 2014524104 A JP2014524104 A JP 2014524104A JP 2014521527 A5 JP2014521527 A5 JP 2014521527A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- adhesive layer
- disposed
- depositing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 25
- 239000012790 adhesive layer Substances 0.000 claims 15
- 239000000758 substrate Substances 0.000 claims 15
- 238000000034 method Methods 0.000 claims 12
- 238000000151 deposition Methods 0.000 claims 8
- 239000003989 dielectric material Substances 0.000 claims 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 6
- 239000010703 silicon Substances 0.000 claims 6
- 239000011368 organic material Substances 0.000 claims 4
- 229920002120 photoresistant polymer Polymers 0.000 claims 4
- 238000010292 electrical insulation Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161514823P | 2011-08-03 | 2011-08-03 | |
| US61/514,823 | 2011-08-03 | ||
| US13/565,693 | 2012-08-02 | ||
| US13/565,693 US8921165B2 (en) | 2011-08-03 | 2012-08-02 | Elimination of silicon residues from MEMS cavity floor |
| PCT/US2012/049497 WO2013020039A2 (en) | 2011-08-03 | 2012-08-03 | Elimination of silicon residues from mems cavity floor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014521527A JP2014521527A (ja) | 2014-08-28 |
| JP2014521527A5 true JP2014521527A5 (enExample) | 2015-07-30 |
| JP6021914B2 JP6021914B2 (ja) | 2016-11-09 |
Family
ID=47626256
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014524104A Active JP6021914B2 (ja) | 2011-08-03 | 2012-08-03 | Memsキャビティ底からのシリコン残留物の消去 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8921165B2 (enExample) |
| EP (1) | EP2739562B1 (enExample) |
| JP (1) | JP6021914B2 (enExample) |
| KR (1) | KR101937767B1 (enExample) |
| CN (1) | CN103732528B (enExample) |
| WO (1) | WO2013020039A2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6917370B2 (ja) * | 2015-11-16 | 2021-08-11 | キャベンディッシュ・キネティックス・インコーポレイテッドCavendish Kinetics, Inc. | Rfスイッチの脚とアンカーにおける電流取り扱い |
| GB202117751D0 (en) * | 2019-11-14 | 2022-01-26 | Memsstar Ltd | Method of manufacturing a microstructure |
| EP3929540A1 (en) * | 2020-06-26 | 2021-12-29 | TE Connectivity Norge AS | Attachment system for attaching a sensor to a substrate, method of attaching a sensor to a substrate |
| US11332364B1 (en) * | 2021-01-29 | 2022-05-17 | AAC Technologies Pte. Ltd. | Method for forming MEMS cavity structure |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5531018A (en) * | 1993-12-20 | 1996-07-02 | General Electric Company | Method of micromachining electromagnetically actuated current switches with polyimide reinforcement seals, and switches produced thereby |
| US5994161A (en) * | 1997-09-03 | 1999-11-30 | Motorola, Inc. | Temperature coefficient of offset adjusted semiconductor device and method thereof |
| GB0011964D0 (en) * | 2000-05-18 | 2000-07-05 | Suyal N | Thick glass films with controlled refractive indices and their applications |
| ATE360896T1 (de) * | 2001-04-19 | 2007-05-15 | Imec Inter Uni Micro Electr | Herstellung von integrierten abstimmbaren/umschaltbaren passiven mikro- und millimeterwellenmodulen |
| US6798029B2 (en) * | 2003-05-09 | 2004-09-28 | International Business Machines Corporation | Method of fabricating micro-electromechanical switches on CMOS compatible substrates |
| US7148436B1 (en) * | 2003-08-14 | 2006-12-12 | Sandia Corporation | Microelectromechanical acceleration-sensing apparatus |
| TW593127B (en) * | 2003-08-18 | 2004-06-21 | Prime View Int Co Ltd | Interference display plate and manufacturing method thereof |
| JP2006231439A (ja) * | 2005-02-23 | 2006-09-07 | Sony Corp | 微小機械素子とその製造方法、半導体装置、ならびに通信装置 |
| JP4807987B2 (ja) * | 2005-09-06 | 2011-11-02 | 日本電信電話株式会社 | 気密封止パッケージおよび光サブモジュール |
| US20090071837A1 (en) * | 2005-11-18 | 2009-03-19 | Mikael Fredenberg | Master electrode and method of forming it |
| KR20080097023A (ko) * | 2007-04-30 | 2008-11-04 | 엘지전자 주식회사 | Rf mems 스위치 및 그 제조 방법 |
| JP2009009884A (ja) * | 2007-06-29 | 2009-01-15 | Mitsubishi Electric Corp | Memsスイッチ及びその製造方法 |
| CN101572850A (zh) * | 2008-04-11 | 2009-11-04 | 王文 | 在低温下制作的带应力释放膜的电容式麦克风及其制作方法 |
| JP4636292B2 (ja) * | 2008-08-27 | 2011-02-23 | 株式会社村田製作所 | 電子部品及び電子部品の製造方法 |
| CN101738865A (zh) * | 2008-11-05 | 2010-06-16 | 中芯国际集成电路制造(上海)有限公司 | 一种干法贴膜工艺 |
| CN101800189B (zh) * | 2009-02-11 | 2013-05-01 | 中国科学院微电子研究所 | 利用苯并环丁烯制作介质桥的方法 |
| US8289674B2 (en) * | 2009-03-17 | 2012-10-16 | Cavendish Kinetics, Ltd. | Moving a free-standing structure between high and low adhesion states |
-
2012
- 2012-08-02 US US13/565,693 patent/US8921165B2/en active Active
- 2012-08-03 WO PCT/US2012/049497 patent/WO2013020039A2/en not_active Ceased
- 2012-08-03 CN CN201280038717.4A patent/CN103732528B/zh active Active
- 2012-08-03 JP JP2014524104A patent/JP6021914B2/ja active Active
- 2012-08-03 EP EP12746449.3A patent/EP2739562B1/en active Active
- 2012-08-03 KR KR1020147005594A patent/KR101937767B1/ko active Active