JP2014521527A5 - - Google Patents

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Publication number
JP2014521527A5
JP2014521527A5 JP2014524104A JP2014524104A JP2014521527A5 JP 2014521527 A5 JP2014521527 A5 JP 2014521527A5 JP 2014524104 A JP2014524104 A JP 2014524104A JP 2014524104 A JP2014524104 A JP 2014524104A JP 2014521527 A5 JP2014521527 A5 JP 2014521527A5
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JP
Japan
Prior art keywords
layer
substrate
adhesive layer
disposed
depositing
Prior art date
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Application number
JP2014524104A
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English (en)
Japanese (ja)
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JP6021914B2 (ja
JP2014521527A (ja
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Publication date
Priority claimed from US13/565,693 external-priority patent/US8921165B2/en
Application filed filed Critical
Publication of JP2014521527A publication Critical patent/JP2014521527A/ja
Publication of JP2014521527A5 publication Critical patent/JP2014521527A5/ja
Application granted granted Critical
Publication of JP6021914B2 publication Critical patent/JP6021914B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2014524104A 2011-08-03 2012-08-03 Memsキャビティ底からのシリコン残留物の消去 Active JP6021914B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161514823P 2011-08-03 2011-08-03
US61/514,823 2011-08-03
US13/565,693 2012-08-02
US13/565,693 US8921165B2 (en) 2011-08-03 2012-08-02 Elimination of silicon residues from MEMS cavity floor
PCT/US2012/049497 WO2013020039A2 (en) 2011-08-03 2012-08-03 Elimination of silicon residues from mems cavity floor

Publications (3)

Publication Number Publication Date
JP2014521527A JP2014521527A (ja) 2014-08-28
JP2014521527A5 true JP2014521527A5 (enExample) 2015-07-30
JP6021914B2 JP6021914B2 (ja) 2016-11-09

Family

ID=47626256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014524104A Active JP6021914B2 (ja) 2011-08-03 2012-08-03 Memsキャビティ底からのシリコン残留物の消去

Country Status (6)

Country Link
US (1) US8921165B2 (enExample)
EP (1) EP2739562B1 (enExample)
JP (1) JP6021914B2 (enExample)
KR (1) KR101937767B1 (enExample)
CN (1) CN103732528B (enExample)
WO (1) WO2013020039A2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6917370B2 (ja) * 2015-11-16 2021-08-11 キャベンディッシュ・キネティックス・インコーポレイテッドCavendish Kinetics, Inc. Rfスイッチの脚とアンカーにおける電流取り扱い
GB202117751D0 (en) * 2019-11-14 2022-01-26 Memsstar Ltd Method of manufacturing a microstructure
EP3929540A1 (en) * 2020-06-26 2021-12-29 TE Connectivity Norge AS Attachment system for attaching a sensor to a substrate, method of attaching a sensor to a substrate
US11332364B1 (en) * 2021-01-29 2022-05-17 AAC Technologies Pte. Ltd. Method for forming MEMS cavity structure

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5531018A (en) * 1993-12-20 1996-07-02 General Electric Company Method of micromachining electromagnetically actuated current switches with polyimide reinforcement seals, and switches produced thereby
US5994161A (en) * 1997-09-03 1999-11-30 Motorola, Inc. Temperature coefficient of offset adjusted semiconductor device and method thereof
GB0011964D0 (en) * 2000-05-18 2000-07-05 Suyal N Thick glass films with controlled refractive indices and their applications
ATE360896T1 (de) * 2001-04-19 2007-05-15 Imec Inter Uni Micro Electr Herstellung von integrierten abstimmbaren/umschaltbaren passiven mikro- und millimeterwellenmodulen
US6798029B2 (en) * 2003-05-09 2004-09-28 International Business Machines Corporation Method of fabricating micro-electromechanical switches on CMOS compatible substrates
US7148436B1 (en) * 2003-08-14 2006-12-12 Sandia Corporation Microelectromechanical acceleration-sensing apparatus
TW593127B (en) * 2003-08-18 2004-06-21 Prime View Int Co Ltd Interference display plate and manufacturing method thereof
JP2006231439A (ja) * 2005-02-23 2006-09-07 Sony Corp 微小機械素子とその製造方法、半導体装置、ならびに通信装置
JP4807987B2 (ja) * 2005-09-06 2011-11-02 日本電信電話株式会社 気密封止パッケージおよび光サブモジュール
US20090071837A1 (en) * 2005-11-18 2009-03-19 Mikael Fredenberg Master electrode and method of forming it
KR20080097023A (ko) * 2007-04-30 2008-11-04 엘지전자 주식회사 Rf mems 스위치 및 그 제조 방법
JP2009009884A (ja) * 2007-06-29 2009-01-15 Mitsubishi Electric Corp Memsスイッチ及びその製造方法
CN101572850A (zh) * 2008-04-11 2009-11-04 王文 在低温下制作的带应力释放膜的电容式麦克风及其制作方法
JP4636292B2 (ja) * 2008-08-27 2011-02-23 株式会社村田製作所 電子部品及び電子部品の製造方法
CN101738865A (zh) * 2008-11-05 2010-06-16 中芯国际集成电路制造(上海)有限公司 一种干法贴膜工艺
CN101800189B (zh) * 2009-02-11 2013-05-01 中国科学院微电子研究所 利用苯并环丁烯制作介质桥的方法
US8289674B2 (en) * 2009-03-17 2012-10-16 Cavendish Kinetics, Ltd. Moving a free-standing structure between high and low adhesion states

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