JP6021914B2 - Ｍｅｍｓキャビティ底からのシリコン残留物の消去 - Google Patents

Ｍｅｍｓキャビティ底からのシリコン残留物の消去 Download PDF

Info

Publication number
JP6021914B2
JP6021914B2 JP2014524104A JP2014524104A JP6021914B2 JP 6021914 B2 JP6021914 B2 JP 6021914B2 JP 2014524104 A JP2014524104 A JP 2014524104A JP 2014524104 A JP2014524104 A JP 2014524104A JP 6021914 B2 JP6021914 B2 JP 6021914B2
Authority
JP
Japan
Prior art keywords
layer
adhesion promoter
substrate
promoter layer
mems device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014524104A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014521527A (ja
JP2014521527A5 (enExample
Inventor
ブライアン・アイ・トロイ
ミカエル・ルノー
トーマス・エル・マグワイア
ジョセフ・ダミアン・ゴードン・レイシー
ジェイムズ・エフ・ボビー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cavendish Kinetics Inc
Original Assignee
Cavendish Kinetics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cavendish Kinetics Inc filed Critical Cavendish Kinetics Inc
Publication of JP2014521527A publication Critical patent/JP2014521527A/ja
Publication of JP2014521527A5 publication Critical patent/JP2014521527A5/ja
Application granted granted Critical
Publication of JP6021914B2 publication Critical patent/JP6021914B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/00468—Releasing structures
    • B81C1/00484—Processes for releasing structures not provided for in group B81C1/00476
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
    • B81B3/0008—Structures for avoiding electrostatic attraction, e.g. avoiding charge accumulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/01—Switches
    • B81B2201/012—Switches characterised by the shape
    • B81B2201/014—Switches characterised by the shape having a cantilever fixed on one side connected to one or more dimples
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/01—Switches
    • B81B2201/012—Switches characterised by the shape
    • B81B2201/018—Switches not provided for in B81B2201/014 - B81B2201/016
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0118—Cantilevers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0108—Sacrificial polymer, ashing of organics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H01H2001/0089—Providing protection of elements to be released by etching of sacrificial element; Avoiding stiction problems, e.g. of movable element to substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Micromachines (AREA)
JP2014524104A 2011-08-03 2012-08-03 Ｍｅｍｓキャビティ底からのシリコン残留物の消去 Active JP6021914B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161514823P 2011-08-03 2011-08-03
US61/514,823 2011-08-03
US13/565,693 2012-08-02
US13/565,693 US8921165B2 (en) 2011-08-03 2012-08-02 Elimination of silicon residues from MEMS cavity floor
PCT/US2012/049497 WO2013020039A2 (en) 2011-08-03 2012-08-03 Elimination of silicon residues from mems cavity floor

Publications (3)

Publication Number Publication Date
JP2014521527A JP2014521527A (ja) 2014-08-28
JP2014521527A5 JP2014521527A5 (enExample) 2015-07-30
JP6021914B2 true JP6021914B2 (ja) 2016-11-09

Family

ID=47626256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014524104A Active JP6021914B2 (ja) 2011-08-03 2012-08-03 Ｍｅｍｓキャビティ底からのシリコン残留物の消去

Country Status (6)

Country Link
US (1) US8921165B2 (enExample)
EP (1) EP2739562B1 (enExample)
JP (1) JP6021914B2 (enExample)
KR (1) KR101937767B1 (enExample)
CN (1) CN103732528B (enExample)
WO (1) WO2013020039A2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6917370B2 (ja) * 2015-11-16 2021-08-11 キャベンディッシュ・キネティックス・インコーポレイテッドＣａｖｅｎｄｉｓｈ Ｋｉｎｅｔｉｃｓ， Ｉｎｃ． Ｒｆスイッチの脚とアンカーにおける電流取り扱い
GB202117751D0 (en) * 2019-11-14 2022-01-26 Memsstar Ltd Method of manufacturing a microstructure
EP3929540A1 (en) * 2020-06-26 2021-12-29 TE Connectivity Norge AS Attachment system for attaching a sensor to a substrate, method of attaching a sensor to a substrate
US11332364B1 (en) * 2021-01-29 2022-05-17 AAC Technologies Pte. Ltd. Method for forming MEMS cavity structure

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5531018A (en) * 1993-12-20 1996-07-02 General Electric Company Method of micromachining electromagnetically actuated current switches with polyimide reinforcement seals, and switches produced thereby
US5994161A (en) * 1997-09-03 1999-11-30 Motorola, Inc. Temperature coefficient of offset adjusted semiconductor device and method thereof
GB0011964D0 (en) * 2000-05-18 2000-07-05 Suyal N Thick glass films with controlled refractive indices and their applications
ATE360896T1 (de) * 2001-04-19 2007-05-15 Imec Inter Uni Micro Electr Herstellung von integrierten abstimmbaren/umschaltbaren passiven mikro- und millimeterwellenmodulen
US6798029B2 (en) * 2003-05-09 2004-09-28 International Business Machines Corporation Method of fabricating micro-electromechanical switches on CMOS compatible substrates
US7148436B1 (en) * 2003-08-14 2006-12-12 Sandia Corporation Microelectromechanical acceleration-sensing apparatus
TW593127B (en) * 2003-08-18 2004-06-21 Prime View Int Co Ltd Interference display plate and manufacturing method thereof
JP2006231439A (ja) * 2005-02-23 2006-09-07 Sony Corp 微小機械素子とその製造方法、半導体装置、ならびに通信装置
JP4807987B2 (ja) * 2005-09-06 2011-11-02 日本電信電話株式会社 気密封止パッケージおよび光サブモジュール
US20090071837A1 (en) * 2005-11-18 2009-03-19 Mikael Fredenberg Master electrode and method of forming it
KR20080097023A (ko) * 2007-04-30 2008-11-04 엘지전자 주식회사 Ｒｆ ｍｅｍｓ 스위치 및 그 제조 방법
JP2009009884A (ja) * 2007-06-29 2009-01-15 Mitsubishi Electric Corp Ｍｅｍｓスイッチ及びその製造方法
CN101572850A (zh) * 2008-04-11 2009-11-04 王文 在低温下制作的带应力释放膜的电容式麦克风及其制作方法
JP4636292B2 (ja) * 2008-08-27 2011-02-23 株式会社村田製作所 電子部品及び電子部品の製造方法
CN101738865A (zh) * 2008-11-05 2010-06-16 中芯国际集成电路制造(上海)有限公司 一种干法贴膜工艺
CN101800189B (zh) * 2009-02-11 2013-05-01 中国科学院微电子研究所 利用苯并环丁烯制作介质桥的方法
US8289674B2 (en) * 2009-03-17 2012-10-16 Cavendish Kinetics, Ltd. Moving a free-standing structure between high and low adhesion states

Also Published As

Publication number Publication date
US8921165B2 (en) 2014-12-30
US20130032453A1 (en) 2013-02-07
EP2739562B1 (en) 2017-12-20
WO2013020039A3 (en) 2013-03-21
EP2739562A2 (en) 2014-06-11
WO2013020039A2 (en) 2013-02-07
JP2014521527A (ja) 2014-08-28
KR20140053263A (ko) 2014-05-07
CN103732528A (zh) 2014-04-16
KR101937767B1 (ko) 2019-04-11
CN103732528B (zh) 2018-09-28

Similar Documents

Publication Publication Date Title
US7993950B2 (en) System and method of encapsulation
CN1309019C (zh) 在cmos匹配衬底上制造微电子机械开关的方法
JP6016362B2 (ja) ハイブリッドｍｅｍｓｒｆスイッチとその製造方法およびｍｅｍｓ構造を製造する方法
US9938138B2 (en) MEMS device structure with a capping structure
JP6165730B2 (ja) Ｍｅｍｓデバイス・アンカリング
JP6021914B2 (ja) Ｍｅｍｓキャビティ底からのシリコン残留物の消去
CN104627948B (zh) 微机械传感器设备以及相应的制造方法
US20190119105A1 (en) MEMS Method and Structure
KR101632650B1 (ko) 희생층의 에칭 속도를 증가시키는 방법 및 이 방법으로 제조된 디바이스
JP4555950B2 (ja) 微小電気機械装置を製造するための方法及びこの方法により得られる微小電気機械装置
JP2004160638A (ja) 構造要素およびその製造法
US9162877B2 (en) Lateral etch stop for NEMS release etch for high density NEMS/CMOS monolithic integration
CN105593157B (zh) 用于实现电介质与有机材料之间的良好粘附的方法
CN112447587A (zh) 内连线结构的制造方法
KR100191709B1 (ko) 미세 콘택홀의 형성방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150609

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150609

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160517

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160816

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160913

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20161004

R150 Certificate of patent or registration of utility model

Ref document number: 6021914

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250