JP6021914B2 - Memsキャビティ底からのシリコン残留物の消去 - Google Patents

Memsキャビティ底からのシリコン残留物の消去 Download PDF

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Publication number
JP6021914B2
JP6021914B2 JP2014524104A JP2014524104A JP6021914B2 JP 6021914 B2 JP6021914 B2 JP 6021914B2 JP 2014524104 A JP2014524104 A JP 2014524104A JP 2014524104 A JP2014524104 A JP 2014524104A JP 6021914 B2 JP6021914 B2 JP 6021914B2
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Japan
Prior art keywords
layer
adhesion promoter
substrate
promoter layer
mems device
Prior art date
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Active
Application number
JP2014524104A
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English (en)
Japanese (ja)
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JP2014521527A5 (enExample
JP2014521527A (ja
Inventor
ブライアン・アイ・トロイ
ミカエル・ルノー
トーマス・エル・マグワイア
ジョセフ・ダミアン・ゴードン・レイシー
ジェイムズ・エフ・ボビー
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Cavendish Kinetics Inc
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Cavendish Kinetics Inc
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Publication date
Application filed by Cavendish Kinetics Inc filed Critical Cavendish Kinetics Inc
Publication of JP2014521527A publication Critical patent/JP2014521527A/ja
Publication of JP2014521527A5 publication Critical patent/JP2014521527A5/ja
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Publication of JP6021914B2 publication Critical patent/JP6021914B2/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/00468—Releasing structures
    • B81C1/00484—Processes for releasing structures not provided for in group B81C1/00476
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
    • B81B3/0008—Structures for avoiding electrostatic attraction, e.g. avoiding charge accumulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/01—Switches
    • B81B2201/012—Switches characterised by the shape
    • B81B2201/014—Switches characterised by the shape having a cantilever fixed on one side connected to one or more dimples
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/01—Switches
    • B81B2201/012—Switches characterised by the shape
    • B81B2201/018—Switches not provided for in B81B2201/014 - B81B2201/016
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0118—Cantilevers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0108—Sacrificial polymer, ashing of organics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H01H2001/0089—Providing protection of elements to be released by etching of sacrificial element; Avoiding stiction problems, e.g. of movable element to substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Micromachines (AREA)
JP2014524104A 2011-08-03 2012-08-03 Memsキャビティ底からのシリコン残留物の消去 Active JP6021914B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161514823P 2011-08-03 2011-08-03
US61/514,823 2011-08-03
US13/565,693 2012-08-02
US13/565,693 US8921165B2 (en) 2011-08-03 2012-08-02 Elimination of silicon residues from MEMS cavity floor
PCT/US2012/049497 WO2013020039A2 (en) 2011-08-03 2012-08-03 Elimination of silicon residues from mems cavity floor

Publications (3)

Publication Number Publication Date
JP2014521527A JP2014521527A (ja) 2014-08-28
JP2014521527A5 JP2014521527A5 (enExample) 2015-07-30
JP6021914B2 true JP6021914B2 (ja) 2016-11-09

Family

ID=47626256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014524104A Active JP6021914B2 (ja) 2011-08-03 2012-08-03 Memsキャビティ底からのシリコン残留物の消去

Country Status (6)

Country Link
US (1) US8921165B2 (enExample)
EP (1) EP2739562B1 (enExample)
JP (1) JP6021914B2 (enExample)
KR (1) KR101937767B1 (enExample)
CN (1) CN103732528B (enExample)
WO (1) WO2013020039A2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108352276B (zh) * 2015-11-16 2020-12-29 卡文迪什动力有限公司 Rf开关的腿和锚中的电流处理
GB2598263B (en) * 2019-11-14 2022-09-21 Memsstar Ltd Method of manufacturing a microstructure
EP3929540A1 (en) * 2020-06-26 2021-12-29 TE Connectivity Norge AS Attachment system for attaching a sensor to a substrate, method of attaching a sensor to a substrate
US11332364B1 (en) * 2021-01-29 2022-05-17 AAC Technologies Pte. Ltd. Method for forming MEMS cavity structure

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5531018A (en) * 1993-12-20 1996-07-02 General Electric Company Method of micromachining electromagnetically actuated current switches with polyimide reinforcement seals, and switches produced thereby
US5994161A (en) * 1997-09-03 1999-11-30 Motorola, Inc. Temperature coefficient of offset adjusted semiconductor device and method thereof
GB0011964D0 (en) * 2000-05-18 2000-07-05 Suyal N Thick glass films with controlled refractive indices and their applications
US6876056B2 (en) * 2001-04-19 2005-04-05 Interuniversitair Microelektronica Centrum (Imec) Method and system for fabrication of integrated tunable/switchable passive microwave and millimeter wave modules
US6798029B2 (en) * 2003-05-09 2004-09-28 International Business Machines Corporation Method of fabricating micro-electromechanical switches on CMOS compatible substrates
US7148436B1 (en) * 2003-08-14 2006-12-12 Sandia Corporation Microelectromechanical acceleration-sensing apparatus
TW593127B (en) * 2003-08-18 2004-06-21 Prime View Int Co Ltd Interference display plate and manufacturing method thereof
JP2006231439A (ja) * 2005-02-23 2006-09-07 Sony Corp 微小機械素子とその製造方法、半導体装置、ならびに通信装置
JP4807987B2 (ja) * 2005-09-06 2011-11-02 日本電信電話株式会社 気密封止パッケージおよび光サブモジュール
US20090218233A1 (en) * 2005-11-18 2009-09-03 Mikael Fredenberg Method of Forming a Multilayer Structure
KR20080097023A (ko) * 2007-04-30 2008-11-04 엘지전자 주식회사 Rf mems 스위치 및 그 제조 방법
JP2009009884A (ja) * 2007-06-29 2009-01-15 Mitsubishi Electric Corp Memsスイッチ及びその製造方法
CN101572850A (zh) * 2008-04-11 2009-11-04 王文 在低温下制作的带应力释放膜的电容式麦克风及其制作方法
JP4636292B2 (ja) * 2008-08-27 2011-02-23 株式会社村田製作所 電子部品及び電子部品の製造方法
CN101738865A (zh) * 2008-11-05 2010-06-16 中芯国际集成电路制造(上海)有限公司 一种干法贴膜工艺
CN101800189B (zh) * 2009-02-11 2013-05-01 中国科学院微电子研究所 利用苯并环丁烯制作介质桥的方法
US8289674B2 (en) * 2009-03-17 2012-10-16 Cavendish Kinetics, Ltd. Moving a free-standing structure between high and low adhesion states

Also Published As

Publication number Publication date
KR101937767B1 (ko) 2019-04-11
US20130032453A1 (en) 2013-02-07
CN103732528B (zh) 2018-09-28
WO2013020039A2 (en) 2013-02-07
WO2013020039A3 (en) 2013-03-21
KR20140053263A (ko) 2014-05-07
US8921165B2 (en) 2014-12-30
EP2739562A2 (en) 2014-06-11
CN103732528A (zh) 2014-04-16
JP2014521527A (ja) 2014-08-28
EP2739562B1 (en) 2017-12-20

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