CN103732528B - 从mems空腔底部消除硅残留物 - Google Patents

从mems空腔底部消除硅残留物 Download PDF

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Publication number
CN103732528B
CN103732528B CN201280038717.4A CN201280038717A CN103732528B CN 103732528 B CN103732528 B CN 103732528B CN 201280038717 A CN201280038717 A CN 201280038717A CN 103732528 B CN103732528 B CN 103732528B
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CN
China
Prior art keywords
layer
substrate
adhesion promoter
cavity
adhesion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201280038717.4A
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English (en)
Chinese (zh)
Other versions
CN103732528A (zh
Inventor
布莱恩·I·特洛伊
迈克·雷诺
托马斯·L·麦圭尔
约瑟夫·达米安·戈登·拉西
詹姆斯·F·波比亚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qorvo US Inc
Original Assignee
Cavendish Kinetics Inc
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Filing date
Publication date
Application filed by Cavendish Kinetics Inc filed Critical Cavendish Kinetics Inc
Publication of CN103732528A publication Critical patent/CN103732528A/zh
Application granted granted Critical
Publication of CN103732528B publication Critical patent/CN103732528B/zh
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/00468—Releasing structures
    • B81C1/00484—Processes for releasing structures not provided for in group B81C1/00476
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
    • B81B3/0008—Structures for avoiding electrostatic attraction, e.g. avoiding charge accumulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/01—Switches
    • B81B2201/012—Switches characterised by the shape
    • B81B2201/014—Switches characterised by the shape having a cantilever fixed on one side connected to one or more dimples
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/01—Switches
    • B81B2201/012—Switches characterised by the shape
    • B81B2201/018—Switches not provided for in B81B2201/014 - B81B2201/016
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0118—Cantilevers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0108—Sacrificial polymer, ashing of organics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H01H2001/0089—Providing protection of elements to be released by etching of sacrificial element; Avoiding stiction problems, e.g. of movable element to substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Micromachines (AREA)
CN201280038717.4A 2011-08-03 2012-08-03 从mems空腔底部消除硅残留物 Active CN103732528B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161514823P 2011-08-03 2011-08-03
US61/514,823 2011-08-03
US13/565,693 2012-08-02
US13/565,693 US8921165B2 (en) 2011-08-03 2012-08-02 Elimination of silicon residues from MEMS cavity floor
PCT/US2012/049497 WO2013020039A2 (en) 2011-08-03 2012-08-03 Elimination of silicon residues from mems cavity floor

Publications (2)

Publication Number Publication Date
CN103732528A CN103732528A (zh) 2014-04-16
CN103732528B true CN103732528B (zh) 2018-09-28

Family

ID=47626256

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280038717.4A Active CN103732528B (zh) 2011-08-03 2012-08-03 从mems空腔底部消除硅残留物

Country Status (6)

Country Link
US (1) US8921165B2 (enExample)
EP (1) EP2739562B1 (enExample)
JP (1) JP6021914B2 (enExample)
KR (1) KR101937767B1 (enExample)
CN (1) CN103732528B (enExample)
WO (1) WO2013020039A2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108352276B (zh) * 2015-11-16 2020-12-29 卡文迪什动力有限公司 Rf开关的腿和锚中的电流处理
GB2598263B (en) * 2019-11-14 2022-09-21 Memsstar Ltd Method of manufacturing a microstructure
EP3929540A1 (en) * 2020-06-26 2021-12-29 TE Connectivity Norge AS Attachment system for attaching a sensor to a substrate, method of attaching a sensor to a substrate
US11332364B1 (en) * 2021-01-29 2022-05-17 AAC Technologies Pte. Ltd. Method for forming MEMS cavity structure

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5652559A (en) * 1993-12-20 1997-07-29 General Electric Company Method of micromachining electromagnetically actuated current switches with polyimide reinforcement seals, and switches produced thereby
CN1429182A (zh) * 2000-05-18 2003-07-09 特拉赫兹光电技术有限公司 改良的涂层粘合剂
US7148436B1 (en) * 2003-08-14 2006-12-12 Sandia Corporation Microelectromechanical acceleration-sensing apparatus
CN101572850A (zh) * 2008-04-11 2009-11-04 王文 在低温下制作的带应力释放膜的电容式麦克风及其制作方法
US20100052472A1 (en) * 2008-08-27 2010-03-04 Murata Manufacturing Co., Ltd. Electronic component and method for manufacturing electronic component
CN101738865A (zh) * 2008-11-05 2010-06-16 中芯国际集成电路制造(上海)有限公司 一种干法贴膜工艺

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5994161A (en) * 1997-09-03 1999-11-30 Motorola, Inc. Temperature coefficient of offset adjusted semiconductor device and method thereof
US6876056B2 (en) * 2001-04-19 2005-04-05 Interuniversitair Microelektronica Centrum (Imec) Method and system for fabrication of integrated tunable/switchable passive microwave and millimeter wave modules
US6798029B2 (en) * 2003-05-09 2004-09-28 International Business Machines Corporation Method of fabricating micro-electromechanical switches on CMOS compatible substrates
TW593127B (en) * 2003-08-18 2004-06-21 Prime View Int Co Ltd Interference display plate and manufacturing method thereof
JP2006231439A (ja) * 2005-02-23 2006-09-07 Sony Corp 微小機械素子とその製造方法、半導体装置、ならびに通信装置
JP4807987B2 (ja) * 2005-09-06 2011-11-02 日本電信電話株式会社 気密封止パッケージおよび光サブモジュール
US20090218233A1 (en) * 2005-11-18 2009-09-03 Mikael Fredenberg Method of Forming a Multilayer Structure
KR20080097023A (ko) * 2007-04-30 2008-11-04 엘지전자 주식회사 Ｒｆ ｍｅｍｓ 스위치 및 그 제조 방법
JP2009009884A (ja) * 2007-06-29 2009-01-15 Mitsubishi Electric Corp Ｍｅｍｓスイッチ及びその製造方法
CN101800189B (zh) * 2009-02-11 2013-05-01 中国科学院微电子研究所 利用苯并环丁烯制作介质桥的方法
US8289674B2 (en) * 2009-03-17 2012-10-16 Cavendish Kinetics, Ltd. Moving a free-standing structure between high and low adhesion states

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5652559A (en) * 1993-12-20 1997-07-29 General Electric Company Method of micromachining electromagnetically actuated current switches with polyimide reinforcement seals, and switches produced thereby
CN1429182A (zh) * 2000-05-18 2003-07-09 特拉赫兹光电技术有限公司 改良的涂层粘合剂
US7148436B1 (en) * 2003-08-14 2006-12-12 Sandia Corporation Microelectromechanical acceleration-sensing apparatus
CN101572850A (zh) * 2008-04-11 2009-11-04 王文 在低温下制作的带应力释放膜的电容式麦克风及其制作方法
US20100052472A1 (en) * 2008-08-27 2010-03-04 Murata Manufacturing Co., Ltd. Electronic component and method for manufacturing electronic component
CN101738865A (zh) * 2008-11-05 2010-06-16 中芯国际集成电路制造(上海)有限公司 一种干法贴膜工艺

Also Published As

Publication number Publication date
JP6021914B2 (ja) 2016-11-09
KR101937767B1 (ko) 2019-04-11
US20130032453A1 (en) 2013-02-07
WO2013020039A2 (en) 2013-02-07
WO2013020039A3 (en) 2013-03-21
KR20140053263A (ko) 2014-05-07
US8921165B2 (en) 2014-12-30
EP2739562A2 (en) 2014-06-11
CN103732528A (zh) 2014-04-16
JP2014521527A (ja) 2014-08-28
EP2739562B1 (en) 2017-12-20

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Effective date of registration: 20220407

Address after: North Carolina

Patentee after: QORVO US, Inc.

Address before: California, USA

Patentee before: CAVENDISH KINETICS, Inc.