JP2011233910A - 多勾配ドレインドーピング特性を持つ高電圧縦型トランジスタ - Google Patents
多勾配ドレインドーピング特性を持つ高電圧縦型トランジスタ Download PDFInfo
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Abstract
【解決手段】高電圧トランジスタは、半導体基板のメサを定める第一及び第二の溝を含む。第一及び第二のフィールドプレート部材は、それぞれ、第一及び第二の溝に配置され、第一及び第二のフィールドプレート部材の各々は、誘電体層でメサから分離されている。メサは複数の部分を含み、各部分は、実質的に一定のドーピング濃度勾配を持ち、一の部分の勾配は、他の部分の勾配よりも少なくとも10%大きい。
【選択図】図4
Description
本出願は、2003年3月21日に出願された米国特許出願第10/393,759号の一部継続(CIP)出願であり、この米国特許出願第10/393,759号は、現在米国特許第6,573,558号である2001年9月7日に出願された米国特許出願第09/948,930号の継続出願であり、これらの出願の両方とも、本一部継続出願の代理人に割り当てられたものである。
拡張ドレイン又はドリフト領域を持つ高電圧電界効果トランジスタ(HVFET)、及び、それを作成する方法を説明する。HVFETは、低い固有オン状態抵抗を持ち、オフ状態で、高い電圧をサポートする。以下の説明では、本発明の完全な理解を提供するために、材料の型、ドーピングレベル、構造的特徴、処理ステップ等のような多数の具体的な詳細が示されている。半導体技術分野の当業者は、これらの詳細の多くがなくても、本発明を実践することができることを理解するであろう。他の例では、本発明を不明瞭にするのを避けるため、よく知られた要素、技術、及び処理ステップは、詳細に説明していない。
21 N+基板
22a N-型ドリフト領域
22b N-型ドリフト領域
24a フィールドプレート
24b フィールドプレート
24c フィールドプレート
26a P本体
26b P本体
26c P本体
26d P本体
27a N+
27b N+
27c N+
27d N+
28a 酸化物層
28b 酸化物層
28c 酸化物層
28d 酸化物層
29a ゲート酸化膜
29b ゲート酸化膜
30a ゲート
30b ゲート
31 ドレイン電極
32 ソース電極
33 絶縁層
40 ラテラルNMOS高電圧トランジスタ
41 N+基板
42a N-型ドリフト領域
42b N-型ドリフト領域
43 N+
44a フィールドプレート
44b フィールドプレート
45 ドレイン電極
46 ソース電極
47 N+
48 P本体
49a 酸化物層
49b 酸化物層
50 酸化物層
53 ゲート酸化膜
55 ゲート
56 ゲート電極
57 基板電極
60 ラテラルHVFETトランジスタ
61 N+基板
62a N-型ドリフト領域
63 N+
64a フィールドプレート
64b フィールドプレート
64c フィールドプレート
65 ドレイン電極
66 ソース電極
67 N+
68 P本体
69a 酸化物層
69b 酸化物層
69c 酸化物層
70 絶縁層
73 ゲート酸化膜
75 ゲート
77 基板電極
80 縦型HVFETトランジスタ
81 N+基板
82a N-型ドリフト領域
82b N-型ドリフト領域
84a フィールドプレート部材
84b フィールドプレート部材
84c フィールドプレート部材
86a P本体
86b P本体
87a N+領域
87b N+領域
87c N+領域
87d N+領域
88a 酸化物層
88b 酸化物層
88c 酸化物層
89a ゲート酸化膜
90a ゲート
90b ゲート
90c ゲート
90d ゲート
91 ドレイン電極
92 ソース電極
100 N+基板
101 Epi
102a Ox
102b Ox
103a FP
103b FP
105 N+
106 誘電体層
107 P本体
109 ソース
110a FP
110b FP
111 ドレイン
112a 溝
112b 溝
113a ゲート
113b ゲート
115a MOSゲート
115b MOSゲート
116a 誘電体層
116b 誘電体層
120 グラフ
121 グラフ
123 グラフ
125 グラフ
126 グラフ
Claims (22)
- 第一の導電型のドレイン領域、
前記第一の導電型のソース領域、
前記ソース領域に隣接する、前記第一の導電型と逆の第二の導電型の本体領域、
それぞれ、実質的に異なる第一及び第二のドーピング濃度勾配を持つ第一及び第二の部分を備える、前記ドレイン領域から前記本体領域への第一の方向に拡がり、前記第一の導電型のドリフト領域、
前記ドリフト領域から完全に絶縁されている、前記ドリフト領域の反対側にそれぞれ配置される第一及び第二のフィールドプレート部材、及び、
前記本体領域に隣接して配置される絶縁ゲート、
を備えることを特徴とする高電圧トランジスタ。 - 前記第一と第二のドーピング濃度勾配が少なくとも10%異なる、
ことを特徴とする請求項1に記載の高電圧トランジスタ。 - 前記高電圧トランジスタは、平らな底面を持つ半導体基板上に製造され、前記第一の方向は、前記平らな底面に対して垂直に向けられる
ことを特徴とする請求項1に記載の高電圧トランジスタ。 - 前記第一の導電型がn-型を含み、前記第二の導電型がp-型を含む
ことを特徴とする請求項1に記載の高電圧トランジスタ。 - 前記ドリフト領域は、長さが前記第一の方向に向けられ、かつ幅が前記第一の方向と直交する第二の方向に向けられ、前記長さが前記幅の5倍より大きい
ことを特徴とする請求項1に記載の高電圧トランジスタ。 - 前記第一の部分が、前記本体領域の最も近くに置かれ、前記第二の部分が、前記ドレイン領域の最も近くに置かれる
ことを特徴とする請求項1に記載の高電圧トランジスタ。 - 前記第一のドーピング濃度勾配が、前記第二のドーピング濃度勾配よりも小さい
ことを特徴とする請求項6に記載の高電圧トランジスタ。 - 前記第一及び第二のフィールドプレート部材が、誘電体層によって、前記ドリフト領域から各々絶縁される
ことを特徴とする請求項1に記載の高電圧トランジスタ。 - 前記ドリフト領域及び前記誘電体層が、各々、前記第一の方向と直交する第二の方向に幅を持ち、前記誘電体層の幅が、前記ドリフト領域の幅よりも大きい
ことを特徴とする請求項8に記載の高電圧トランジスタ。 - 第一の導電型のドレイン、
前記第一の導電型のソース、
前記ドレインから前記ソースへの第一の方向に拡がり、それぞれ、実質的に異なる第一及び第二のドーピング濃度勾配を持つ第一及び第二の部分を備える、前記第一の導電型のドリフト領域、及び、
各々が、誘電体層によって前記ドリフト領域から絶縁されている、前記ドリフト領域の反対側にそれぞれ配置された第一及び第二のフィールドプレート部材、
を備えることを特徴とする高電圧トランジスタ。 - 前記第一と第二のドーピング濃度勾配が、少なくとも10%異なる
ことを特徴とする請求項10に記載の高電圧トランジスタ。 - 前記高電圧トランジスタが、平らな底面を持つ半導体基板上に製造され、前記第一の方向が、前記平らな底面に対して垂直に向けられている、
ことを特徴とする請求項10に記載の高電圧トランジスタ。 - 前記第一の導電型がn-型を含む
ことを特徴とする請求項10に記載の高電圧トランジスタ。 - 前記ドリフト領域は、長さが前記第一の方向に向けられ、幅が前記第一の方向と直交する第二の方向に向けられており、前記長さが前記幅の5倍より大きい
ことを特徴とする請求項10に記載の高電圧トランジスタ。 - 前記フィールドプレート部材が、前記ドリフト領域と平行に向けられる
ことを特徴とする請求項10に記載の高電圧トランジスタ。 - 前記第一の部分が、本体領域の最も近くに置かれ、前記第二の部分が、前記ドレイン領域の最も近くに置かれる
ことを特徴とする請求項10に記載の高電圧トランジスタ。 - 前記第一のドーピング濃度勾配が、前記第二のドーピング濃度勾配よりも小さい
ことを特徴とする請求項16に記載の高電圧トランジスタ。 - 基板、
メサを定める前記基板の第一及び第二の溝、及び、
前記第一及び第二の溝にそれぞれ配置され、各々が、誘電体層で前記メサから分離された第一及び第二のフィールドプレート部材、
を備え、前記メサが、各々が実質的に一定のドーピング濃度勾配を持つ複数の部分を備え、最上部分が、最下部分のドーピング濃度勾配よりも少なくとも10%大きいドーピング濃度勾配を持つ
ことを特徴とする高電圧トランジスタ。 - 前記複数の部分が積層内で隣接され、前記積層内の各連続した部分は、直前の部分よりも大きいドーピング濃度勾配を持っている
ことを特徴とする請求項18に記載の高電圧トランジスタ。 - 基板と、
メサを定める前記基板の第一及び第二の溝と、
を備え、前記メサは、自身を通り抜ける縦方向に実質的に連続式に変化するドーピング濃度勾配を持ち、
前記第一及び第二の溝にそれぞれ配置され、各々が、誘電体層で前記メサから分離された第一及び第二のフィールドプレート部材
が設けられたことを特徴とする高電圧トランジスタ。 - 前記ドーピング濃度勾配が、前記メサの表面付近から、前記メサの底面付近に向かって増大する
ことを特徴とする請求項20に記載の高電圧トランジスタ。 - 前記ドーピング濃度勾配が、前記メサの前記表面付近から前記底面付近までで、少なくとも10%異なる
ことを特徴とする請求項21に記載の高電圧トランジスタ。
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JP4898892B2 (ja) | 2012-03-21 |
JP2010034602A (ja) | 2010-02-12 |
US7335944B2 (en) | 2008-02-26 |
JP2006210869A (ja) | 2006-08-10 |
US20050133858A1 (en) | 2005-06-23 |
US7221011B2 (en) | 2007-05-22 |
EP1684357A2 (en) | 2006-07-26 |
EP1684357B1 (en) | 2016-11-23 |
US7459366B2 (en) | 2008-12-02 |
JP4719507B2 (ja) | 2011-07-06 |
US20080102581A1 (en) | 2008-05-01 |
EP1684357A3 (en) | 2012-11-28 |
US20070132013A1 (en) | 2007-06-14 |
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