JP2011227476A5 - - Google Patents

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JP2011227476A5
JP2011227476A5 JP2011063449A JP2011063449A JP2011227476A5 JP 2011227476 A5 JP2011227476 A5 JP 2011227476A5 JP 2011063449 A JP2011063449 A JP 2011063449A JP 2011063449 A JP2011063449 A JP 2011063449A JP 2011227476 A5 JP2011227476 A5 JP 2011227476A5
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eye
image
liquid crystal
display device
crystal display
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JP2011063449A
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JP2011227476A (ja
JP5681540B2 (ja
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JP2011063449A 2010-03-31 2011-03-23 液晶表示装置 Expired - Fee Related JP5681540B2 (ja)

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JP2011063449A JP5681540B2 (ja) 2010-03-31 2011-03-23 液晶表示装置

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Application Number Priority Date Filing Date Title
JP2010080794 2010-03-31
JP2010080794 2010-03-31
JP2011063449A JP5681540B2 (ja) 2010-03-31 2011-03-23 液晶表示装置

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JP2015002217A Division JP5871414B2 (ja) 2010-03-31 2015-01-08 液晶表示装置の作製方法

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JP2011227476A JP2011227476A (ja) 2011-11-10
JP2011227476A5 true JP2011227476A5 (enExample) 2014-05-08
JP5681540B2 JP5681540B2 (ja) 2015-03-11

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JP2015002217A Active JP5871414B2 (ja) 2010-03-31 2015-01-08 液晶表示装置の作製方法
JP2015246868A Active JP6175125B2 (ja) 2010-03-31 2015-12-18 液晶表示装置の作製方法

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JP2015246868A Active JP6175125B2 (ja) 2010-03-31 2015-12-18 液晶表示装置の作製方法

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US (2) US9646521B2 (enExample)
JP (3) JP5681540B2 (enExample)
TW (1) TWI557712B (enExample)
WO (1) WO2011122299A1 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011122299A1 (en) * 2010-03-31 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
WO2011148842A1 (en) 2010-05-25 2011-12-01 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and driving method thereof
JP2012103683A (ja) 2010-10-14 2012-05-31 Semiconductor Energy Lab Co Ltd 表示装置及び表示装置の駆動方法
US9792844B2 (en) 2010-11-23 2017-10-17 Seminconductor Energy Laboratory Co., Ltd. Driving method of image display device in which the increase in luminance and the decrease in luminance compensate for each other
KR101974413B1 (ko) 2010-11-30 2019-05-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치의 구동 방법
JP2012145930A (ja) * 2010-12-22 2012-08-02 Semiconductor Energy Lab Co Ltd 液晶表示装置の駆動方法
TWI569041B (zh) 2011-02-14 2017-02-01 半導體能源研究所股份有限公司 顯示裝置
US9443455B2 (en) 2011-02-25 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Display device having a plurality of pixels
US8994763B2 (en) 2011-03-25 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method of the same
US9024927B2 (en) 2011-06-15 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Display device and method for driving the same
US8928708B2 (en) 2011-07-15 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Display device and method for driving the display device
KR20130010834A (ko) 2011-07-19 2013-01-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
CN102707490A (zh) * 2011-11-25 2012-10-03 京东方科技集团股份有限公司 三维液晶显示面板及其制备方法和三维液晶显示器
US9367120B2 (en) 2012-05-04 2016-06-14 Blackberry Limited Electronic device and method of detecting touches on a touch-sensitive display
US9244572B2 (en) 2012-05-04 2016-01-26 Blackberry Limited Electronic device including touch-sensitive display and method of detecting touches
JP6051605B2 (ja) * 2012-06-13 2016-12-27 ソニー株式会社 表示装置、および表示制御方法、並びにプログラム
JP2014010416A (ja) * 2012-07-03 2014-01-20 Sharp Corp 表示装置
CN103439824A (zh) * 2013-08-30 2013-12-11 京东方科技集团股份有限公司 阵列基板、像素驱动方法及显示装置
US9436324B2 (en) 2013-11-04 2016-09-06 Blackberry Limited Electronic device including touch-sensitive display and method of detecting touches
KR102120422B1 (ko) 2014-02-05 2020-06-09 삼성디스플레이 주식회사 렌즈를 포함하는 표시 장치
KR20160117938A (ko) * 2015-04-01 2016-10-11 삼성전자주식회사 백라이트 장치 및 이를 포함하는 3d 디스플레이 장치
CN105097895B (zh) * 2015-06-25 2018-09-21 京东方科技集团股份有限公司 薄膜晶体管、阵列基板及显示装置
US10477192B2 (en) 2016-09-14 2019-11-12 Semiconductor Energy Laboratory Co., Ltd. Display system and electronic device
JP6731059B2 (ja) * 2016-09-23 2020-07-29 シャープ株式会社 表示装置および表示装置の制御方法。
JP2018116228A (ja) * 2017-01-20 2018-07-26 株式会社ジャパンディスプレイ 表示装置
CN112188181B (zh) * 2019-07-02 2023-07-04 中强光电股份有限公司 图像显示设备、立体图像处理电路及其同步信号校正方法
CN110875018B (zh) * 2019-11-28 2021-04-06 京东方科技集团股份有限公司 显示装置及其驱动方法、驱动电路
WO2021110029A1 (zh) * 2019-12-05 2021-06-10 北京芯海视界三维科技有限公司 场序列显示器
US12272321B2 (en) * 2022-09-21 2025-04-08 Apple Inc. Method and apparatus for LED driver to reduce cross talk or flicker

Family Cites Families (149)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
US5903243A (en) * 1993-03-11 1999-05-11 Fed Corporation Compact, body-mountable field emission display device, and display panel having utility for use therewith
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法
DE69635107D1 (de) 1995-08-03 2005-09-29 Koninkl Philips Electronics Nv Halbleiteranordnung mit einem transparenten schaltungselement
US6608652B1 (en) 1995-10-14 2003-08-19 Semiconductor Energy Laboratory Co., Ltd. Image display system and method
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
JPH11331879A (ja) * 1998-05-15 1999-11-30 Fuji Film Microdevices Co Ltd 立体画像プロジェクタおよび画像立体視用治具
US6314248B1 (en) 1998-04-21 2001-11-06 Fuji Photo Film, Co., Ltd. Image photography apparatus, image reproducing apparatus, image photography and reproducing apparatus, stereographic projector, jig for image stereoscopic vision, and printer
JP4170454B2 (ja) 1998-07-24 2008-10-22 Hoya株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
EP0997868B1 (en) 1998-10-30 2012-03-14 Semiconductor Energy Laboratory Co., Ltd. Field sequential liquid crystal display device and driving method thereof, and head mounted display
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
US6597348B1 (en) 1998-12-28 2003-07-22 Semiconductor Energy Laboratory Co., Ltd. Information-processing device
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
US7385579B2 (en) 2000-09-29 2008-06-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method of driving the same
TW540228B (en) * 2000-11-03 2003-07-01 Actuality Systems Inc Three-dimensional display systems
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
KR100725426B1 (ko) * 2000-11-23 2007-06-07 엘지.필립스 엘시디 주식회사 시분할 방식 액정표시장치 및 그의 컬러영상표시방법
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP2002350846A (ja) * 2001-05-22 2002-12-04 Yazaki Corp Ledバックライト
JP2003066920A (ja) * 2001-08-28 2003-03-05 Matsushita Electric Ind Co Ltd 表示装置およびその駆動方法
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
US7061014B2 (en) 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 LnCuO(S,Se,Te)単結晶薄膜の製造方法
JP2003259395A (ja) * 2002-03-06 2003-09-12 Matsushita Electric Ind Co Ltd 立体表示方法及び立体表示装置
US7049190B2 (en) 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
US7189992B2 (en) 2002-05-21 2007-03-13 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures having a transparent channel
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
WO2004040354A1 (ja) 2002-10-30 2004-05-13 Semiconductor Energy Laboratory Co., Ltd. 表示装置及び電子機器
JP4494214B2 (ja) 2002-11-29 2010-06-30 株式会社半導体エネルギー研究所 表示装置、電子機器
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP2005010303A (ja) 2003-06-17 2005-01-13 Sea Phone Co Ltd 表示装置
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
EP2413366B1 (en) 2004-03-12 2017-01-11 Japan Science And Technology Agency A switching element of LCDs or organic EL displays
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006005116A (ja) 2004-06-17 2006-01-05 Casio Comput Co Ltd 膜形成方法、半導体膜、及び積層絶縁膜
US7057638B1 (en) * 2004-08-16 2006-06-06 Mitsubishi Denki Kabushiki Kaisha Stereoscopic image display apparatus
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
CN101057339B (zh) 2004-11-10 2012-12-26 佳能株式会社 无定形氧化物和场效应晶体管
US7868326B2 (en) 2004-11-10 2011-01-11 Canon Kabushiki Kaisha Field effect transistor
CA2585063C (en) 2004-11-10 2013-01-15 Canon Kabushiki Kaisha Light-emitting device
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI445178B (zh) 2005-01-28 2014-07-11 半導體能源研究所股份有限公司 半導體裝置,電子裝置,和半導體裝置的製造方法
TWI562380B (en) 2005-01-28 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device, electronic device, and method of manufacturing semiconductor device
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
WO2006105077A2 (en) 2005-03-28 2006-10-05 Massachusetts Institute Of Technology Low voltage thin film transistor with high-k dielectric material
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機el表示装置およびその製造方法
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
KR100728113B1 (ko) * 2005-10-20 2007-06-13 삼성에스디아이 주식회사 입체 영상 표시장치 및 그 구동 방법
KR101117948B1 (ko) 2005-11-15 2012-02-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 디스플레이 장치 제조 방법
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ZnOフィルム及びこれを用いたTFTの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
US8169467B2 (en) 2006-03-29 2012-05-01 Nvidia Corporation System, method, and computer program product for increasing an LCD display vertical blanking interval
TWI366679B (en) * 2006-03-29 2012-06-21 Nvidia Corp System, method, and computer program product for controlling stereo glasses shutters
US8274448B1 (en) 2006-03-29 2012-09-25 Nvidia Corporation Stereoscopic display system, method and computer program product
US8872754B2 (en) 2006-03-29 2014-10-28 Nvidia Corporation System, method, and computer program product for controlling stereo glasses shutters
US7724211B2 (en) 2006-03-29 2010-05-25 Nvidia Corporation System, method, and computer program product for controlling stereo glasses shutters
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ZnO TFT
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Nec液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
TWI346930B (en) 2006-12-01 2011-08-11 Ind Tech Res Inst Method for driving a light source and a backing light source
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーelディスプレイおよびその製造方法
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
US8388138B1 (en) * 2007-03-11 2013-03-05 Simon Boothroyd Projection display systems
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
JP5244331B2 (ja) 2007-03-26 2013-07-24 出光興産株式会社 非晶質酸化物半導体薄膜、その製造方法、薄膜トランジスタの製造方法、電界効果型トランジスタ、発光装置、表示装置及びスパッタリングターゲット
WO2008126879A1 (en) 2007-04-09 2008-10-23 Canon Kabushiki Kaisha Light-emitting apparatus and production method thereof
JP5197058B2 (ja) * 2007-04-09 2013-05-15 キヤノン株式会社 発光装置とその作製方法
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
US8289228B2 (en) 2007-04-18 2012-10-16 Seiko Epson Corporation Display device, method of driving display device, and electronic apparatus
JP5157231B2 (ja) * 2007-04-18 2013-03-06 セイコーエプソン株式会社 表示装置および電子機器
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
CN101663762B (zh) 2007-04-25 2011-09-21 佳能株式会社 氧氮化物半导体
US7648647B2 (en) * 2007-05-08 2010-01-19 Kyushu University, National University Corporation Polymer/liquid crystal composite and liquid crystal element
JP5215589B2 (ja) 2007-05-11 2013-06-19 キヤノン株式会社 絶縁ゲート型トランジスタ及び表示装置
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ZnO 계 박막 트랜지스터 및 그 제조방법
JP2009042255A (ja) * 2007-08-06 2009-02-26 Hitachi Displays Ltd 液晶表示装置
JPWO2009034953A1 (ja) 2007-09-10 2010-12-24 出光興産株式会社 薄膜トランジスタ
TWI364604B (en) * 2007-09-14 2012-05-21 Chimei Innolux Corp Backlight module and application thereof
US8355019B2 (en) * 2007-11-02 2013-01-15 Dimension Technologies, Inc. 3D optical illusions from off-axis displays
JP5215158B2 (ja) 2007-12-17 2013-06-19 富士フイルム株式会社 無機結晶性配向膜及びその製造方法、半導体デバイス
JP2009230071A (ja) * 2008-03-25 2009-10-08 Toshiba Corp シャッタ眼鏡システム、シャッタ眼鏡装置のシャッタ開閉タイミング調整装置およびシャッタ眼鏡システムにおけるシャッタ開閉タイミング調整方法
EP2136354B1 (en) 2008-06-09 2017-03-22 Semiconductor Energy Laboratory Co., Ltd. Display device, liquid crystal display device and electronic device including the same
TWI518800B (zh) 2008-08-08 2016-01-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
KR101612147B1 (ko) 2008-10-23 2016-04-12 이데미쓰 고산 가부시키가이샤 박막 트랜지스터 및 그 제조방법
TWI404034B (zh) * 2009-01-23 2013-08-01 Mstar Semiconductor Inc 過驅動值產生裝置及過驅動值產生方法
US8907885B2 (en) 2009-01-23 2014-12-09 Mstar Semiconductor, Inc. Backlight control apparatus and associated method
JP2010210712A (ja) * 2009-03-06 2010-09-24 Sony Corp 画像表示装置、画像表示観察システム及び画像表示方法
WO2011074408A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Non-volatile latch circuit and logic circuit, and semiconductor device using the same
CN102742003B (zh) * 2010-01-15 2015-01-28 株式会社半导体能源研究所 半导体器件
US9143771B2 (en) * 2010-02-19 2015-09-22 Lg Electronics Inc. Image display device and method for operating the same
WO2011122299A1 (en) * 2010-03-31 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device

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