JP2011216673A - 固体撮像装置、固体撮像装置の製造方法、および電子機器 - Google Patents

固体撮像装置、固体撮像装置の製造方法、および電子機器 Download PDF

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Publication number
JP2011216673A
JP2011216673A JP2010083600A JP2010083600A JP2011216673A JP 2011216673 A JP2011216673 A JP 2011216673A JP 2010083600 A JP2010083600 A JP 2010083600A JP 2010083600 A JP2010083600 A JP 2010083600A JP 2011216673 A JP2011216673 A JP 2011216673A
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region
conductivity type
impurity
charge
photoelectric conversion
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JP2010083600A
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Japanese (ja)
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JP2011216673A5 (enExample
Inventor
Hiroyuki Ori
洋征龍 大理
Takashi Machida
貴志 町田
Takahiro Kawamura
隆宏 河村
Yasunori Sogo
康則 十河
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Sony Corp
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Sony Corp
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Priority to JP2010083600A priority Critical patent/JP2011216673A/ja
Priority to US13/053,455 priority patent/US8629484B2/en
Priority to CN201110075913.6A priority patent/CN102208423B/zh
Publication of JP2011216673A publication Critical patent/JP2011216673A/ja
Publication of JP2011216673A5 publication Critical patent/JP2011216673A5/ja
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/532—Control of the integration time by controlling global shutters in CMOS SSIS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
    • H10F39/1865—Overflow drain structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80377—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2010083600A 2010-03-31 2010-03-31 固体撮像装置、固体撮像装置の製造方法、および電子機器 Ceased JP2011216673A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010083600A JP2011216673A (ja) 2010-03-31 2010-03-31 固体撮像装置、固体撮像装置の製造方法、および電子機器
US13/053,455 US8629484B2 (en) 2010-03-31 2011-03-22 Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
CN201110075913.6A CN102208423B (zh) 2010-03-31 2011-03-24 固体摄像装置、制造固体摄像装置的方法和电子设备

Applications Claiming Priority (1)

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JP2010083600A JP2011216673A (ja) 2010-03-31 2010-03-31 固体撮像装置、固体撮像装置の製造方法、および電子機器

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JP2011216673A true JP2011216673A (ja) 2011-10-27
JP2011216673A5 JP2011216673A5 (enExample) 2013-05-09

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Country Status (3)

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US (1) US8629484B2 (enExample)
JP (1) JP2011216673A (enExample)
CN (1) CN102208423B (enExample)

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JP2015065271A (ja) * 2013-09-25 2015-04-09 ソニー株式会社 固体撮像素子およびその動作方法、並びに電子機器およびその動作方法
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JP2016516294A (ja) * 2013-03-06 2016-06-02 アップル インコーポレイテッド 画像センサにおける電荷転送
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WO2020050007A1 (ja) * 2018-09-07 2020-03-12 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
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JP2011249406A (ja) * 2010-05-24 2011-12-08 Brookman Technology Inc 固体撮像装置
JP2016516294A (ja) * 2013-03-06 2016-06-02 アップル インコーポレイテッド 画像センサにおける電荷転送
JP2015026696A (ja) * 2013-07-25 2015-02-05 キヤノン株式会社 光電変換装置及び撮像システム
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JP2015065271A (ja) * 2013-09-25 2015-04-09 ソニー株式会社 固体撮像素子およびその動作方法、並びに電子機器およびその動作方法
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JP2016111224A (ja) * 2014-12-08 2016-06-20 株式会社ブルックマンテクノロジ 光検出素子及び固体撮像装置
WO2016152184A1 (ja) * 2015-03-25 2016-09-29 ソニー株式会社 固体撮像装置および固体撮像装置の駆動方法
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JPWO2016152184A1 (ja) * 2015-03-25 2018-01-18 ソニー株式会社 固体撮像装置および固体撮像装置の駆動方法
KR20190086660A (ko) * 2016-12-01 2019-07-23 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 소자, 고체 촬상 소자의 제조 방법 및 촬상 장치
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JP2018120981A (ja) * 2017-01-26 2018-08-02 キヤノン株式会社 固体撮像装置、撮像システム、および固体撮像装置の製造方法
JP2019009155A (ja) * 2017-06-20 2019-01-17 キヤノン株式会社 撮像装置、撮像システム、移動体、および、撮像装置の製造方法
WO2020050007A1 (ja) * 2018-09-07 2020-03-12 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
US11438534B2 (en) 2018-09-07 2022-09-06 Sony Semiconductor Solutions Corporation Solid-state imaging device and electronic apparatus
JP2019117949A (ja) * 2019-04-08 2019-07-18 浜松ホトニクス株式会社 固体撮像装置
JP2022025594A (ja) * 2020-07-29 2022-02-10 キヤノン株式会社 光電変換装置
JP7652543B2 (ja) 2020-07-29 2025-03-27 キヤノン株式会社 光電変換装置

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CN102208423B (zh) 2015-08-19
US20110241089A1 (en) 2011-10-06
CN102208423A (zh) 2011-10-05
US8629484B2 (en) 2014-01-14

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