JP2011216673A5 - - Google Patents

Download PDF

Info

Publication number
JP2011216673A5
JP2011216673A5 JP2010083600A JP2010083600A JP2011216673A5 JP 2011216673 A5 JP2011216673 A5 JP 2011216673A5 JP 2010083600 A JP2010083600 A JP 2010083600A JP 2010083600 A JP2010083600 A JP 2010083600A JP 2011216673 A5 JP2011216673 A5 JP 2011216673A5
Authority
JP
Japan
Prior art keywords
unit pixel
memory unit
diffusion region
unit
transfer gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2010083600A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011216673A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2010083600A priority Critical patent/JP2011216673A/ja
Priority claimed from JP2010083600A external-priority patent/JP2011216673A/ja
Priority to US13/053,455 priority patent/US8629484B2/en
Priority to CN201110075913.6A priority patent/CN102208423B/zh
Publication of JP2011216673A publication Critical patent/JP2011216673A/ja
Publication of JP2011216673A5 publication Critical patent/JP2011216673A5/ja
Ceased legal-status Critical Current

Links

JP2010083600A 2010-03-31 2010-03-31 固体撮像装置、固体撮像装置の製造方法、および電子機器 Ceased JP2011216673A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010083600A JP2011216673A (ja) 2010-03-31 2010-03-31 固体撮像装置、固体撮像装置の製造方法、および電子機器
US13/053,455 US8629484B2 (en) 2010-03-31 2011-03-22 Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
CN201110075913.6A CN102208423B (zh) 2010-03-31 2011-03-24 固体摄像装置、制造固体摄像装置的方法和电子设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010083600A JP2011216673A (ja) 2010-03-31 2010-03-31 固体撮像装置、固体撮像装置の製造方法、および電子機器

Publications (2)

Publication Number Publication Date
JP2011216673A JP2011216673A (ja) 2011-10-27
JP2011216673A5 true JP2011216673A5 (enExample) 2013-05-09

Family

ID=44697173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010083600A Ceased JP2011216673A (ja) 2010-03-31 2010-03-31 固体撮像装置、固体撮像装置の製造方法、および電子機器

Country Status (3)

Country Link
US (1) US8629484B2 (enExample)
JP (1) JP2011216673A (enExample)
CN (1) CN102208423B (enExample)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5671830B2 (ja) * 2010-03-31 2015-02-18 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、および電子機器
JP5709099B2 (ja) * 2010-05-24 2015-04-30 株式会社ブルックマンテクノロジ 固体撮像装置
JP5637384B2 (ja) * 2010-12-15 2014-12-10 ソニー株式会社 固体撮像素子および駆動方法、並びに電子機器
JP6012197B2 (ja) * 2012-02-17 2016-10-25 キヤノン株式会社 撮像装置及び撮像装置の駆動方法
JP6004665B2 (ja) * 2012-02-17 2016-10-12 キヤノン株式会社 撮像装置、および撮像システム。
KR20130106978A (ko) * 2012-03-21 2013-10-01 삼성전자주식회사 이미지 센서의 단위 픽셀 및 이를 포함하는 이미지 센서
JP2014011253A (ja) * 2012-06-28 2014-01-20 Sony Corp 固体撮像装置および電子機器
US9293500B2 (en) 2013-03-01 2016-03-22 Apple Inc. Exposure control for image sensors
US9276031B2 (en) 2013-03-04 2016-03-01 Apple Inc. Photodiode with different electric potential regions for image sensors
US9041837B2 (en) 2013-03-05 2015-05-26 Apple Inc. Image sensor with reduced blooming
US9741754B2 (en) * 2013-03-06 2017-08-22 Apple Inc. Charge transfer circuit with storage nodes in image sensors
US9549099B2 (en) 2013-03-12 2017-01-17 Apple Inc. Hybrid image sensor
US9319611B2 (en) 2013-03-14 2016-04-19 Apple Inc. Image sensor with flexible pixel summing
JP6159184B2 (ja) * 2013-07-25 2017-07-05 キヤノン株式会社 光電変換装置及び撮像システム
JP6141160B2 (ja) 2013-09-25 2017-06-07 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子およびその動作方法、並びに電子機器およびその動作方法
JP2015095468A (ja) * 2013-11-08 2015-05-18 ソニー株式会社 固体撮像素子および固体撮像素子の製造方法、並びに電子機器
US9596423B1 (en) 2013-11-21 2017-03-14 Apple Inc. Charge summing in an image sensor
US9596420B2 (en) 2013-12-05 2017-03-14 Apple Inc. Image sensor having pixels with different integration periods
US9473706B2 (en) 2013-12-09 2016-10-18 Apple Inc. Image sensor flicker detection
US10285626B1 (en) 2014-02-14 2019-05-14 Apple Inc. Activity identification using an optical heart rate monitor
US9277144B2 (en) 2014-03-12 2016-03-01 Apple Inc. System and method for estimating an ambient light condition using an image sensor and field-of-view compensation
US9232150B2 (en) 2014-03-12 2016-01-05 Apple Inc. System and method for estimating an ambient light condition using an image sensor
US9584743B1 (en) 2014-03-13 2017-02-28 Apple Inc. Image sensor with auto-focus and pixel cross-talk compensation
US9497397B1 (en) 2014-04-08 2016-11-15 Apple Inc. Image sensor with auto-focus and color ratio cross-talk comparison
US9538106B2 (en) 2014-04-25 2017-01-03 Apple Inc. Image sensor having a uniform digital power signature
JP6308864B2 (ja) * 2014-05-15 2018-04-11 キヤノン株式会社 撮像装置
US9686485B2 (en) 2014-05-30 2017-06-20 Apple Inc. Pixel binning in an image sensor
JP6547158B2 (ja) * 2014-12-08 2019-07-24 株式会社ブルックマンテクノロジ 光検出素子及び固体撮像装置
US10205893B2 (en) 2015-03-25 2019-02-12 Sony Corporation Solid-state imaging device and driving method of solid-state imaging device
JP2017054947A (ja) * 2015-09-10 2017-03-16 セイコーエプソン株式会社 固体撮像素子及びその製造方法、並びに、電子機器
JP6664175B2 (ja) * 2015-09-11 2020-03-13 キヤノン株式会社 撮像装置及び撮像装置の製造方法
JP2017143189A (ja) * 2016-02-10 2017-08-17 ルネサスエレクトロニクス株式会社 固体撮像素子
US9912883B1 (en) 2016-05-10 2018-03-06 Apple Inc. Image sensor with calibrated column analog-to-digital converters
US10658419B2 (en) 2016-09-23 2020-05-19 Apple Inc. Stacked backside illuminated SPAD array
US10777594B2 (en) * 2016-12-01 2020-09-15 Sony Semiconductor Solutions Corporation Solid-state imaging element, solid-state imaging element manufacturing method, and imaging device
US10656251B1 (en) 2017-01-25 2020-05-19 Apple Inc. Signal acquisition in a SPAD detector
JP6799690B2 (ja) 2017-01-25 2020-12-16 アップル インコーポレイテッドApple Inc. 変調感度を有するspad検出器
JP6957157B2 (ja) * 2017-01-26 2021-11-02 キヤノン株式会社 固体撮像装置、撮像システム、および固体撮像装置の製造方法
US10962628B1 (en) 2017-01-26 2021-03-30 Apple Inc. Spatial temporal weighting in a SPAD detector
WO2018193747A1 (en) * 2017-04-19 2018-10-25 Sony Semiconductor Solutions Corporation Semiconductor device, method of manufacturing the same, and electronic apparatus
JP6650909B2 (ja) * 2017-06-20 2020-02-19 キヤノン株式会社 撮像装置、撮像システム、移動体、および、撮像装置の製造方法
US10622538B2 (en) 2017-07-18 2020-04-14 Apple Inc. Techniques for providing a haptic output and sensing a haptic input using a piezoelectric body
US10440301B2 (en) 2017-09-08 2019-10-08 Apple Inc. Image capture device, pixel, and method providing improved phase detection auto-focus performance
CN110098203B (zh) * 2018-01-30 2024-09-24 维深半导体公司 背照式图像传感器及其制备
US10559614B2 (en) * 2018-03-09 2020-02-11 Semiconductor Components Industries, Llc Dual conversion gain circuitry with buried channels
US10848693B2 (en) 2018-07-18 2020-11-24 Apple Inc. Image flare detection using asymmetric pixels
US11019294B2 (en) 2018-07-18 2021-05-25 Apple Inc. Seamless readout mode transitions in image sensors
JP2020043413A (ja) * 2018-09-07 2020-03-19 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
US11233966B1 (en) 2018-11-29 2022-01-25 Apple Inc. Breakdown voltage monitoring for avalanche diodes
TWI685959B (zh) * 2019-01-07 2020-02-21 力晶積成電子製造股份有限公司 影像感測器及其製造方法
US11503234B2 (en) * 2019-02-27 2022-11-15 Canon Kabushiki Kaisha Photoelectric conversion device, imaging system, radioactive ray imaging system, and movable object
JP6818075B2 (ja) * 2019-04-08 2021-01-20 浜松ホトニクス株式会社 固体撮像装置
KR102791695B1 (ko) * 2020-04-29 2025-04-07 에스케이하이닉스 주식회사 이미지 센서
JP7652543B2 (ja) * 2020-07-29 2025-03-27 キヤノン株式会社 光電変換装置
US11563910B2 (en) 2020-08-04 2023-01-24 Apple Inc. Image capture devices having phase detection auto-focus pixels
US12356740B2 (en) 2020-09-25 2025-07-08 Apple Inc. Transistor integration with stacked single-photon avalanche diode (SPAD) pixel arrays
US11546532B1 (en) 2021-03-16 2023-01-03 Apple Inc. Dynamic correlated double sampling for noise rejection in image sensors
US12192644B2 (en) 2021-07-29 2025-01-07 Apple Inc. Pulse-width modulation pixel sensor
US12069384B2 (en) 2021-09-23 2024-08-20 Apple Inc. Image capture devices having phase detection auto-focus pixels

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5294534B2 (ja) * 2004-06-04 2013-09-18 三星電子株式会社 Cmosイメージセンサー及びその製造方法
KR100761824B1 (ko) * 2004-06-04 2007-09-28 삼성전자주식회사 이미지 센서 및 그 제조 방법
JP2008004692A (ja) * 2006-06-21 2008-01-10 Nikon Corp 固体撮像装置
JP4710017B2 (ja) * 2006-10-20 2011-06-29 国立大学法人静岡大学 Cmosイメージセンサ
JP5568880B2 (ja) * 2008-04-03 2014-08-13 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および電子機器
JP5213501B2 (ja) * 2008-04-09 2013-06-19 キヤノン株式会社 固体撮像装置
JP5335271B2 (ja) * 2008-04-09 2013-11-06 キヤノン株式会社 光電変換装置及びそれを用いた撮像システム
JP5671830B2 (ja) * 2010-03-31 2015-02-18 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、および電子機器

Similar Documents

Publication Publication Date Title
JP2011216673A5 (enExample)
JP2015005752A5 (enExample)
JP2013149757A5 (enExample)
JP2018014409A5 (enExample)
TW200746366A (en) Semiconductor device and manufacturing method thereof
JP2011192976A5 (enExample)
EP3514831A3 (en) Solid-state image pickup apparatus and image pickup system
JP2012124462A5 (enExample)
JP2011119710A5 (ja) 半導体装置
WO2008156516A3 (en) Methods of fabricating silicon carbide power devices by at least partially removing an n-type silicon carbide substrate, and silicon carbide power devices so fabricated
JP2012256808A5 (enExample)
JP2014007399A5 (enExample)
WO2011110869A3 (en) Photosensitive solid state heterojunction device
JP2010087494A5 (ja) 半導体装置
WO2011140355A3 (en) Oxide nitride stack for backside reflector of solar cell
JP2011077509A5 (ja) トランジスタ
EP2575179A3 (en) Compound semiconductor device and manufacturing method therefor
JP2015023250A5 (enExample)
MY159215A (en) Solid-state image pickup device
JP2016213298A5 (ja) 撮像装置
JP2015064921A5 (ja) 半導体装置
JP2016018963A5 (enExample)
EP3136423A3 (en) Semiconductor device and method of manufacturing the same
JP2011082426A5 (enExample)
WO2011151681A3 (ja) 半導体装置およびこれを用いた半導体リレー