JP2011205067A - 液体噴射ヘッド及び液体噴射装置並びに圧電素子 - Google Patents
液体噴射ヘッド及び液体噴射装置並びに圧電素子 Download PDFInfo
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- JP2011205067A JP2011205067A JP2011015924A JP2011015924A JP2011205067A JP 2011205067 A JP2011205067 A JP 2011205067A JP 2011015924 A JP2011015924 A JP 2011015924A JP 2011015924 A JP2011015924 A JP 2011015924A JP 2011205067 A JP2011205067 A JP 2011205067A
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- Prior art keywords
- piezoelectric
- piezoelectric layer
- piezoelectric element
- plane
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- ZCKXRHNLRWLPLJ-UHFFFAOYSA-N barium(2+);propan-1-olate Chemical compound [Ba+2].CCC[O-].CCC[O-] ZCKXRHNLRWLPLJ-UHFFFAOYSA-N 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
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- SGLXWMAOOWXVAM-UHFFFAOYSA-L manganese(2+);octanoate Chemical compound [Mn+2].CCCCCCCC([O-])=O.CCCCCCCC([O-])=O SGLXWMAOOWXVAM-UHFFFAOYSA-L 0.000 description 2
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- WGOMEMWEJIKLSU-UJUIXPSJSA-J (z)-octadec-9-enoate;titanium(4+) Chemical compound [Ti+4].CCCCCCCC\C=C/CCCCCCCC([O-])=O.CCCCCCCC\C=C/CCCCCCCC([O-])=O.CCCCCCCC\C=C/CCCCCCCC([O-])=O.CCCCCCCC\C=C/CCCCCCCC([O-])=O WGOMEMWEJIKLSU-UJUIXPSJSA-J 0.000 description 1
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- JZUFKLXOESDKRF-UHFFFAOYSA-N Chlorothiazide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC2=C1NCNS2(=O)=O JZUFKLXOESDKRF-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
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- SLPLCLDJTNLWPW-UHFFFAOYSA-N barium(2+);2-methylpropan-2-olate Chemical compound [Ba+2].CC(C)(C)[O-].CC(C)(C)[O-] SLPLCLDJTNLWPW-UHFFFAOYSA-N 0.000 description 1
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- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 description 1
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- IZRTVYMPRPTBAI-UHFFFAOYSA-K dibenzoyloxybismuthanyl benzoate Chemical compound [Bi+3].[O-]C(=O)C1=CC=CC=C1.[O-]C(=O)C1=CC=CC=C1.[O-]C(=O)C1=CC=CC=C1 IZRTVYMPRPTBAI-UHFFFAOYSA-K 0.000 description 1
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- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- PQQAOTNUALRVTE-UHFFFAOYSA-L iron(2+);diformate Chemical compound [Fe+2].[O-]C=O.[O-]C=O PQQAOTNUALRVTE-UHFFFAOYSA-L 0.000 description 1
- FRVCGRDGKAINSV-UHFFFAOYSA-L iron(2+);octadecanoate Chemical compound [Fe+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O FRVCGRDGKAINSV-UHFFFAOYSA-L 0.000 description 1
- MVQMKWMKHHXUHG-UHFFFAOYSA-N iron(3+);propan-1-olate Chemical compound [Fe+3].CCC[O-].CCC[O-].CCC[O-] MVQMKWMKHHXUHG-UHFFFAOYSA-N 0.000 description 1
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
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- 229940071125 manganese acetate Drugs 0.000 description 1
- UOGMEBQRZBEZQT-UHFFFAOYSA-L manganese(2+);diacetate Chemical compound [Mn+2].CC([O-])=O.CC([O-])=O UOGMEBQRZBEZQT-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
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- ZEIWWVGGEOHESL-UHFFFAOYSA-N methanol;titanium Chemical compound [Ti].OC.OC.OC.OC ZEIWWVGGEOHESL-UHFFFAOYSA-N 0.000 description 1
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- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- MYXUYXMJVQWRPU-UHFFFAOYSA-N triethoxybismuthane Chemical compound [Bi+3].CC[O-].CC[O-].CC[O-] MYXUYXMJVQWRPU-UHFFFAOYSA-N 0.000 description 1
- ZHXAZZQXWJJBHA-UHFFFAOYSA-N triphenylbismuthane Chemical compound C1=CC=CC=C1[Bi](C=1C=CC=CC=1)C1=CC=CC=C1 ZHXAZZQXWJJBHA-UHFFFAOYSA-N 0.000 description 1
- DRFVTYUXJVLNLR-UHFFFAOYSA-N tris(2-methylbutan-2-yloxy)bismuthane Chemical compound CCC(C)(C)O[Bi](OC(C)(C)CC)OC(C)(C)CC DRFVTYUXJVLNLR-UHFFFAOYSA-N 0.000 description 1
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- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
- B41J2/055—Devices for absorbing or preventing back-pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
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Abstract
【解決手段】圧電体層70と、圧電体層70に設けられた電極60,80とを具備する圧電素子300を備えた液体噴射ヘッドIであって、圧電体層70は、膜厚が3μm以下であり、鉄酸マンガン酸ビスマス及びチタン酸バリウムを含むペロブスカイト型化合物を含有する圧電材料からなり、(110)面に優先配向し、且つ、この(110)面に由来するX線の回折ピーク位置(2θ)が31.80°以上32.00°以下である。
【選択図】図2
Description
かかる態様では、膜厚が3μm以下であり、鉄酸マンガン酸ビスマス及びチタン酸バリウムを含むペロブスカイト型化合物を含有する圧電材料からなり、(110)面に優先配向し、且つ、この(110)面に由来するX線の回折ピーク位置(2θ)が31.80°以上32.00°以下である圧電体層とすることにより、低鉛化、すなわち鉛含有量が低く且つ比誘電率が高い圧電体層を有する液体噴射ヘッドとなる。
図1は、本発明の実施形態1に係る液体噴射ヘッドの一例であるインクジェット式記録ヘッドの概略構成を示す分解斜視図であり、図2は、図1の平面図及びそのA−A′線断面図である。
(0.60<x<1、0<y<0.40、好ましくは、0.70≦x≦0.80、0.20≦y≦0.30であり、x+y=1、0.01<a<0.10である。)
まず、シリコン基板の表面に熱酸化により膜厚400nmのSiO2膜を形成した。次に、SiO2膜上にRFスパッタ法により膜厚100nmのTiAlN膜を形成した。次に、TiAlN膜上にDCスパッタ法により膜厚100nmのIr膜及び膜厚30nmのIrO2膜を順に形成し、その上に蒸着法により(111)に配向したPt膜を形成し、第1電極60とした。
前駆体溶液にSiの化合物を添加せず、0.75Bi(Fe0.95Mn0.05)O3−0.25BaTiO3のペロブスカイト型化合物からなる圧電材料で構成された圧電体層70となるようにした以外は、実施例1と同様にして、圧電素子300を形成した。
Bi、Fe、Mn、Ba、Tiの金属化合物の混合割合を変更して、0.80Bi(Fe0.95Mn0.05)O3−0.20BaTiO3のペロブスカイト型化合物からなる圧電材料で構成された圧電体層70となるようにした以外は、実施例2と同様にして、圧電素子300を形成した。
Bi、Fe、Mn、Ba、Tiの金属化合物の混合割合を変更して、0.70Bi(Fe0.95Mn0.05)O3−0.30BaTiO3のペロブスカイト型化合物からなる圧電材料で構成された圧電体層70となるようにした以外は、実施例2と同様にして、圧電素子300を形成した。
Bi、Fe、Mn、Ba、Ti、Siの金属化合物の混合割合を変更して、0.60Bi(Fe0.95Mn0.05)O3−0.40BaTiO3のペロブスカイト型化合物と、このペロブスカイト型化合物に対して2モル%のSiO2とを有する圧電材料で構成された圧電体層70となるようにした以外は、実施例1と同様にして、圧電素子300を形成した。
前駆体溶液にSiの化合物を添加せず、0.60Bi(Fe0.95Mn0.05)O3−0.40BaTiO3のペロブスカイト型化合物からなる圧電材料で構成された圧電体層70となるようにした以外は、比較例1と同様にして、圧電素子300を形成した。
前駆体溶液に、2−エチルヘキサン酸ランタンも添加し、また、Bi、Fe、Mn、Ba、Tiの金属化合物の混合割合を変更して、0.75(Bi0.70La0.30)(Fe0.95Mn0.05)O3−0.25BaTiO3のペロブスカイト型化合物と、このペロブスカイト型化合物に対して2モル%のSiO2とを有する圧電材料からなる圧電体層70となるようにした以外は、実施例1と同様にして、圧電素子300を形成した。
実施例1〜4及び比較例1〜3の各圧電素子300について、東陽テクニカ社製「FCE−1A」で、φ=400μmの電極パターンを使用し、周波数1kHz、3V〜60Vの三角波を印加して、P(分極量)−V(電圧)の関係を求めた。実施例1のヒステリシスを図3に、実施例2のヒステリシスを図4に、実施例3のヒステリシスを図5に、実施例4のヒステリシスを図6に、比較例1のヒステリシスを図7に、比較例2のヒステリシスを図8、比較例3のヒステリシスを図9に示す。なお、図3〜図9に示すように、実施例1〜4及び比較例1〜3の圧電体層は強誘電体であった。
実施例1〜4及び比較例1〜3の圧電素子300の圧電体層70について、アジレント社製インピーダンスアナライザー「HP4294A」を用い1kHz、振幅141mVの条件で25℃〜300℃における比誘電率εrを測定した。結果を図10に示す。図10に示すように、実施例1〜4の圧電体層70は、比較例1〜3と比べて比誘電率εrが顕著に高く、比誘電率εrが320以上であった。具体的には、25℃での比誘電率は、図10に示すように、実施例1は370、実施例2は355、実施例3は325、実施例4は415であるのに対し、比較例1は205、比較例2は140、比較例3は190であった。
実施例1〜4及び比較例1〜3の圧電素子について、Bruker AXS社製の「D8 Discover」を用い、X線源にCuKα線を使用し、室温で、圧電体層の粉末X線回折パターンをφ=ψ=0°で求めた。実施例1の結果を図11に、実施例2の結果を図12に、実施例3の結果を図13に、実施例4の結果を図14に、比較例1の結果を図15に、比較例2の結果を図16に、比較例3の結果を図17に示す。また、2次元検出画像の一例を、実施例1について図18に示す。
以上、本発明の一実施形態を説明したが、本発明の基本的構成は上述したものに限定されるものではない。例えば、圧電特性を良好にする等のために、Ni、Co、Cr、Sc、V等をさらに有する圧電材料からなる圧電体層としてもよい。
Claims (5)
- 圧電体層と、前記圧電体層に設けられた電極とを具備する圧電素子を備えた液体噴射ヘッドであって、
前記圧電体層は、膜厚が3μm以下であり、
鉄酸マンガン酸ビスマス及びチタン酸バリウムを含むペロブスカイト型化合物を含有する圧電材料からなり、
(110)面に優先配向し、且つ、この(110)面に由来するX線の回折ピーク位置(2θ)が31.80°以上32.00°以下であることを特徴とする液体噴射ヘッド。 - 前記圧電体層は、SiO2をさらに含むことを特徴とする請求項1に記載する液体噴射ヘッド。
- 前記圧電体層は前記ペロブスカイト型化合物に対して0.5モル%以上5モル%以下のSiO2を含むことを特徴とする請求項2に記載する液体噴射ヘッド。
- 請求項1〜3のいずれか一項に記載する液体噴射ヘッドを具備することを特徴とする液体噴射装置。
- 圧電体層と、前記圧電体層に設けられた電極とを具備する圧電素子であって、
前記圧電体層は、膜厚が3μm以下であり、
鉄酸マンガン酸ビスマス及びチタン酸バリウムを含むペロブスカイト型化合物を含有する圧電材料からなり、
(110)面に優先配向し、且つ、この(110)面に由来するX線の回折ピーク位置(2θ)が31.80°以上32.00°以下であることを特徴とする圧電素子。
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EP2824091B1 (en) * | 2013-07-12 | 2020-02-19 | Canon Kabushiki Kaisha | Piezoelectric material, piezoelectric element, and electronic equipment |
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JP2013098442A (ja) * | 2011-11-02 | 2013-05-20 | Seiko Epson Corp | 液体噴射ヘッド、液体噴射装置、及び圧電素子 |
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Also Published As
Publication number | Publication date |
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EP2363900B1 (en) | 2016-01-13 |
EP2363900A3 (en) | 2013-01-23 |
US8714712B2 (en) | 2014-05-06 |
EP2363900A2 (en) | 2011-09-07 |
CN102189795B (zh) | 2014-11-26 |
CN102189795A (zh) | 2011-09-21 |
US20110216130A1 (en) | 2011-09-08 |
JP5839157B2 (ja) | 2016-01-06 |
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