JP2013098441A - 液体噴射ヘッド、液体噴射装置、及び圧電素子 - Google Patents
液体噴射ヘッド、液体噴射装置、及び圧電素子 Download PDFInfo
- Publication number
- JP2013098441A JP2013098441A JP2011241707A JP2011241707A JP2013098441A JP 2013098441 A JP2013098441 A JP 2013098441A JP 2011241707 A JP2011241707 A JP 2011241707A JP 2011241707 A JP2011241707 A JP 2011241707A JP 2013098441 A JP2013098441 A JP 2013098441A
- Authority
- JP
- Japan
- Prior art keywords
- peak
- piezoelectric
- piezoelectric layer
- electrode
- binding energy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 36
- 238000002347 injection Methods 0.000 title abstract 5
- 239000007924 injection Substances 0.000 title abstract 5
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 24
- 229910052742 iron Inorganic materials 0.000 claims abstract description 22
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 claims abstract description 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 41
- 229910052797 bismuth Inorganic materials 0.000 claims description 37
- 239000010936 titanium Substances 0.000 claims description 30
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 27
- 229910052788 barium Inorganic materials 0.000 claims description 21
- 239000002131 composite material Substances 0.000 claims description 17
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 13
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 238000005259 measurement Methods 0.000 abstract description 14
- 239000000243 solution Substances 0.000 abstract description 11
- 230000007613 environmental effect Effects 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 56
- 239000010408 film Substances 0.000 description 50
- 239000000463 material Substances 0.000 description 24
- 239000011572 manganese Substances 0.000 description 23
- 238000000034 method Methods 0.000 description 21
- 239000000203 mixture Substances 0.000 description 19
- 229910002113 barium titanate Inorganic materials 0.000 description 16
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 16
- 229910052748 manganese Inorganic materials 0.000 description 16
- 230000001681 protective effect Effects 0.000 description 15
- 239000013078 crystal Substances 0.000 description 14
- 238000010304 firing Methods 0.000 description 14
- 150000004696 coordination complex Chemical class 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000004891 communication Methods 0.000 description 12
- 239000002243 precursor Substances 0.000 description 12
- 238000005238 degreasing Methods 0.000 description 11
- 230000006870 function Effects 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 238000001035 drying Methods 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 238000000576 coating method Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- LBSANEJBGMCTBH-UHFFFAOYSA-N manganate Chemical compound [O-][Mn]([O-])(=O)=O LBSANEJBGMCTBH-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 238000004151 rapid thermal annealing Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910052723 transition metal Inorganic materials 0.000 description 5
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N acetic acid Substances CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- FHRAKXJVEOBCBQ-UHFFFAOYSA-L 2-ethylhexanoate;manganese(2+) Chemical compound [Mn+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O FHRAKXJVEOBCBQ-UHFFFAOYSA-L 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 206010021143 Hypoxia Diseases 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- SMSVUYQRWYTTLI-UHFFFAOYSA-L 2-ethylhexanoate;iron(2+) Chemical compound [Fe+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O SMSVUYQRWYTTLI-UHFFFAOYSA-L 0.000 description 2
- NJLQUTOLTXWLBV-UHFFFAOYSA-N 2-ethylhexanoic acid titanium Chemical compound [Ti].CCCCC(CC)C(O)=O.CCCCC(CC)C(O)=O.CCCCC(CC)C(O)=O.CCCCC(CC)C(O)=O NJLQUTOLTXWLBV-UHFFFAOYSA-N 0.000 description 2
- -1 BaTiO 3 (for example Chemical compound 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- VJFFDDQGMMQGTQ-UHFFFAOYSA-L barium(2+);2-ethylhexanoate Chemical compound [Ba+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O VJFFDDQGMMQGTQ-UHFFFAOYSA-L 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- NUMHJBONQMZPBW-UHFFFAOYSA-K bis(2-ethylhexanoyloxy)bismuthanyl 2-ethylhexanoate Chemical compound [Bi+3].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O NUMHJBONQMZPBW-UHFFFAOYSA-K 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- QYIGOGBGVKONDY-UHFFFAOYSA-N 1-(2-bromo-5-chlorophenyl)-3-methylpyrazole Chemical compound N1=C(C)C=CN1C1=CC(Cl)=CC=C1Br QYIGOGBGVKONDY-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- 238000000018 DNA microarray Methods 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- XOQKTJRZUUIBMN-UHFFFAOYSA-N [Mn](=O)(=O)([O-])[O-].[Fe+2].[Ba+2].[Bi+3] Chemical compound [Mn](=O)(=O)([O-])[O-].[Fe+2].[Ba+2].[Bi+3] XOQKTJRZUUIBMN-UHFFFAOYSA-N 0.000 description 1
- HKAASGNXFXHLHR-UHFFFAOYSA-N [Mn](=O)(=O)([O-])[O-].[Fe+2].[Bi+3] Chemical compound [Mn](=O)(=O)([O-])[O-].[Fe+2].[Bi+3] HKAASGNXFXHLHR-UHFFFAOYSA-N 0.000 description 1
- YDADSACUMGYURZ-UHFFFAOYSA-N [O-2].[Fe+2].[Bi+3] Chemical compound [O-2].[Fe+2].[Bi+3] YDADSACUMGYURZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- DJHZYHWLGNJISM-FDGPNNRMSA-L barium(2+);(z)-4-oxopent-2-en-2-olate Chemical compound [Ba+2].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O DJHZYHWLGNJISM-FDGPNNRMSA-L 0.000 description 1
- CPUJSIVIXCTVEI-UHFFFAOYSA-N barium(2+);propan-2-olate Chemical compound [Ba+2].CC(C)[O-].CC(C)[O-] CPUJSIVIXCTVEI-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- PVFSDGKDKFSOTB-UHFFFAOYSA-K iron(3+);triacetate Chemical compound [Fe+3].CC([O-])=O.CC([O-])=O.CC([O-])=O PVFSDGKDKFSOTB-UHFFFAOYSA-K 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229940071125 manganese acetate Drugs 0.000 description 1
- UOGMEBQRZBEZQT-UHFFFAOYSA-L manganese(2+);diacetate Chemical compound [Mn+2].CC([O-])=O.CC([O-])=O UOGMEBQRZBEZQT-UHFFFAOYSA-L 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1632—Manufacturing processes machining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1607—Production of print heads with piezoelectric elements
- B41J2/161—Production of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1623—Manufacturing processes bonding and adhesion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1629—Manufacturing processes etching wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1635—Manufacturing processes dividing the wafer into individual chips
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1645—Manufacturing processes thin film formation thin film formation by spincoating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8536—Alkaline earth metal based oxides, e.g. barium titanates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8561—Bismuth-based oxides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
- B41J2002/14241—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm having a cover around the piezoelectric thin film element
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2002/14419—Manifold
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2002/14491—Electrical connection
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/03—Specific materials used
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
【解決手段】 第1電極60、圧電体層70、及び第2電極80を備えた圧電素子300を具備し、圧電体層70は、ビスマス、バリウム、鉄、及びチタンを含むペロブスカイト型構造を有する複合酸化物からなり、X線光電子分光測定においてC 1sに起因するピークのC−C、C−H状態の結合エネルギーを284.8eVとして規格化し、結合エネルギー775eV以上785eV以下の範囲において得られたピークを、ガウス関数を用いてピーク分離したとき、779.0±0.8eVにピークを有すると共に、前記ピークよりも強度の低いピークを高結合エネルギー側に1本以上有する。
【選択図】 なし
Description
から液滴を吐出させる液体噴射ヘッド、液体噴射装置、及び圧電素子に関する。
かかる態様では、圧電体層が結合エネルギー775eV以上785eV以下の範囲において所定のピークを有するものとすることにより、耐電圧性が向上し、絶縁性に優れた圧電素子となる。さらに、鉛の含有量を抑えられるため、環境への負荷を低減することができる。
かかる態様では、環境への負荷を低減し且つ耐電圧性の高い圧電素子を具備するため、信頼性に優れた液体噴射装置を実現することができる。
かかる態様では、圧電体層が結合エネルギー775eV以上785eV以下の範囲において所定のピークを有するものとすることにより、耐電圧性が向上し、絶縁性に優れた圧電素子となる。さらに、鉛の含有量を抑えられるため、環境への負荷を低減することができる。
図1は、本発明の実施形態1に係る液体噴射ヘッドの一例であるインクジェット式記録ヘッドの分解斜視図であり、図2は、図1の平面図及びそのA−A′線断面図である。
(1−x)[BiFeO3]−x[BaTiO3] (1)
(0<x≦0.40)
(Bi1−xBax)(Fe1−xTix) (1’)
(0<x≦0.40)
(1−x)[Bi(Fe1−yMy)O3]−x[BaTiO3] (2)
(0<x≦0.40、0.01≦y≦0.10)
(Bi1−xBax)((Fe1−yMy)1−xTix) (2’)
(0<x≦0.40、0.01≦y≦0.10)
[(1−x){Bi(Fe1−a,Mna)O3}−x{BaTiO3}] (3)
(0.10<x≦0.40、0.01≦a≦0.10)
まず、(110)に配向した単結晶シリコン基板の表面に熱酸化により膜厚1170nmの二酸化シリコン膜を形成した。次に、二酸化シリコン膜上にRFマグネトロンスパッタ法により膜厚40nmのチタン膜を形成し、熱酸化することで酸化チタン膜を形成した。次に、酸化チタン膜上にRFマグネトロンスパッタ法により膜厚100nmの白金膜を形成し、(111)に配向した第1電極60とした。
焼成温度を700℃とした以外は実施例1と同様にして、実施例2の圧電素子を形成した。
前駆体溶液がBi:Ba:Fe:Ti:Mnのモル比が75:25:72.75:25:2.25となるようにした以外は実施例2と同様にして、実施例3の圧電素子を形成した。
2−エチルへキサン酸マンガンを添加せず、前駆体溶液がBi:Ba:Fe:Tiのモル比が75:25:75:25となるようにした以外は実施例2と同様にして、実施例4の圧電素子を形成した。
焼成温度を800℃とした以外は実施例1と同様にして、比較例1の圧電素子を形成した。
X線光電子分光装置(XPS;サーモフィッシャーサイエンティフィック社製、ESCALAB250)を用いて、実施例1〜4及び比較例1の圧電体層の表面分析を行いBa 3d5軌道に起因するピークを求めた。XPSでの操作条件は、単色Al−Kα(1486.6eV)、150W(15kV、10mA)、分析径500μmφとし、パスエネルギー20eVで試料がチャージアップしないように試料ホルダーに設置し、中和電子銃をつけず測定した。また、標準はC 1s軌道に起因するピークを結合エネルギー284.8eVとした。なお、実施例1〜4及び比較例1の圧電体層は、第2電極80を形成する前のものであり、作製後40日後のものとした。実施例1及び2、並びに比較例1の圧電体層について、結合エネルギー775eV以上785eV以下の範囲において得られたピークとガウス関数を用いて分離したピークとを図8〜10に示す。また、実施例3及び4の圧電体層の結合エネルギー775eV以上785eV以下の範囲において得られたピークを図11に示す。
実施例1〜2及び比較例1の各圧電素子について、印加電圧と電流密度との関係を、ヒ
ューレットパッカード社製「4140B」を用い、室温で測定した。結果を図12に示す。
以上、本発明の一実施形態を説明したが、本発明の基本的構成は上述したものに限定されるものではない。例えば、上述した実施形態では、流路形成基板10として、シリコン単結晶基板を例示したが、特にこれに限定されず、例えば、SOI基板、ガラス等の材料を用いるようにしてもよい。
Claims (4)
- 圧電体層と、前記圧電体層に設けられた電極と、を具備する圧電素子を備えた液体噴射ヘッドであって、
前記圧電体層は、ビスマス、バリウム、鉄、及びチタンを含むペロブスカイト型構造を有する複合酸化物からなり、X線光電子分光測定においてC 1sに起因するピークのC−C、C−H状態の結合エネルギーを284.8eVとして規格化し、結合エネルギー775eV以上785eV以下の範囲において得られたピークを、ガウス関数を用いてピーク分離したとき、779.0±0.8eVにピークを有すると共に、前記ピークよりも強度の低いピークを高結合エネルギー側に1本以上有することを特徴とする液体噴射ヘッド。 - 請求項1に記載の液体噴射ヘッドにおいて、前記複合酸化物は、マンガン、コバルト、クロム、ニッケル、及び銅からなる群から選択される少なくとも1つをさらに含むことを特徴とする液体噴射ヘッド。
- 請求項1又は2に記載の液体噴射ヘッドを具備することを特徴とする液体噴射装置。
- 圧電体層と、前記圧電体層に設けられた電極と、を具備し、
前記圧電体層は、ビスマス、バリウム、鉄、及びチタンを含むペロブスカイト型構造を有する複合酸化物からなり、X線光電子分光測定においてC 1sに起因するピークのC−C、C−H状態の結合エネルギーを284.8eVとして規格化し、結合エネルギー775eV以上785eV以下の範囲において得られたピークを、ガウス関数を用いてピーク分離したとき、779.0±0.8eVにピークを有すると共に、前記ピークよりも強度の低いピークを高結合エネルギー側に1本以上有することを特徴とする圧電素子。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011241707A JP2013098441A (ja) | 2011-11-02 | 2011-11-02 | 液体噴射ヘッド、液体噴射装置、及び圧電素子 |
US13/663,666 US8876259B2 (en) | 2011-11-02 | 2012-10-30 | Liquid ejecting head, liquid ejecting apparatus and piezoelectric element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011241707A JP2013098441A (ja) | 2011-11-02 | 2011-11-02 | 液体噴射ヘッド、液体噴射装置、及び圧電素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013098441A true JP2013098441A (ja) | 2013-05-20 |
JP2013098441A5 JP2013098441A5 (ja) | 2014-12-11 |
Family
ID=48171983
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011241707A Withdrawn JP2013098441A (ja) | 2011-11-02 | 2011-11-02 | 液体噴射ヘッド、液体噴射装置、及び圧電素子 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8876259B2 (ja) |
JP (1) | JP2013098441A (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013098442A (ja) * | 2011-11-02 | 2013-05-20 | Seiko Epson Corp | 液体噴射ヘッド、液体噴射装置、及び圧電素子 |
US10421278B2 (en) | 2015-11-02 | 2019-09-24 | Hewlett-Packard Development Company, L.P. | Fluid ejection die and plastic-based substrate |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003066640A (ja) * | 2001-08-30 | 2003-03-05 | Kyocera Corp | 感光体および画像形成装置 |
JP2008078605A (ja) * | 2006-08-24 | 2008-04-03 | Fujitsu Ltd | 電子デバイス及びその製造方法 |
JP2008098627A (ja) * | 2006-09-15 | 2008-04-24 | Canon Inc | 圧電素子、これを用いた液体吐出ヘッド及び超音波モーター |
JP2010248050A (ja) * | 2009-04-20 | 2010-11-04 | Sumitomo Electric Ind Ltd | インジウムリン基板の製造方法、エピタキシャルウエハの製造方法、インジウムリン基板およびエピタキシャルウエハ |
JP2011205067A (ja) * | 2010-03-02 | 2011-10-13 | Seiko Epson Corp | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4051654B2 (ja) | 2000-02-08 | 2008-02-27 | セイコーエプソン株式会社 | 圧電体素子、インクジェット式記録ヘッド及びこれらの製造方法並びにインクジェットプリンタ |
JP5507097B2 (ja) | 2008-03-12 | 2014-05-28 | 富士フイルム株式会社 | ペロブスカイト型酸化物とその製造方法、圧電体、圧電素子、液体吐出装置 |
JP5248168B2 (ja) | 2008-04-01 | 2013-07-31 | セイコーエプソン株式会社 | 圧電材料および圧電素子 |
JP2013098442A (ja) * | 2011-11-02 | 2013-05-20 | Seiko Epson Corp | 液体噴射ヘッド、液体噴射装置、及び圧電素子 |
-
2011
- 2011-11-02 JP JP2011241707A patent/JP2013098441A/ja not_active Withdrawn
-
2012
- 2012-10-30 US US13/663,666 patent/US8876259B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003066640A (ja) * | 2001-08-30 | 2003-03-05 | Kyocera Corp | 感光体および画像形成装置 |
JP2008078605A (ja) * | 2006-08-24 | 2008-04-03 | Fujitsu Ltd | 電子デバイス及びその製造方法 |
JP2008098627A (ja) * | 2006-09-15 | 2008-04-24 | Canon Inc | 圧電素子、これを用いた液体吐出ヘッド及び超音波モーター |
JP2010248050A (ja) * | 2009-04-20 | 2010-11-04 | Sumitomo Electric Ind Ltd | インジウムリン基板の製造方法、エピタキシャルウエハの製造方法、インジウムリン基板およびエピタキシャルウエハ |
JP2011205067A (ja) * | 2010-03-02 | 2011-10-13 | Seiko Epson Corp | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 |
Also Published As
Publication number | Publication date |
---|---|
US20130106958A1 (en) | 2013-05-02 |
US8876259B2 (en) | 2014-11-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6369681B2 (ja) | 圧電素子、液体噴射ヘッド及び液体噴射装置 | |
JP5660274B2 (ja) | 液体噴射ヘッドの製造方法、圧電素子の製造方法、液体噴射ヘッド、液体噴射装置及び圧電素子 | |
JP5641185B2 (ja) | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 | |
JP5556182B2 (ja) | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 | |
JP5825466B2 (ja) | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 | |
JP2011211143A (ja) | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 | |
JP5975210B2 (ja) | 圧電素子、液体噴射ヘッド、液体噴射装置、超音波デバイス及びセンサー並びに圧電素子の製造方法 | |
JP5812243B2 (ja) | 液体噴射ヘッド、液体噴射装置、圧電素子、超音波デバイス及びirセンサー | |
JP5773129B2 (ja) | 液体噴射ヘッド、液体噴射装置、圧電素子、超音波デバイス及びirセンサー | |
JP6146599B2 (ja) | 圧電素子、液体噴射ヘッド、液体噴射装置、超音波デバイス及びセンサー | |
JP2011238708A (ja) | 液体噴射ヘッドの製造方法、液体噴射装置、及び圧電素子の製造方法 | |
JP2015138804A (ja) | 圧電素子、液体噴射ヘッド及びセンサー | |
JP2015099828A (ja) | 圧電素子、液体噴射ヘッド、液体噴射装置、超音波センサー、圧電モーター及び発電装置 | |
JP2013098441A (ja) | 液体噴射ヘッド、液体噴射装置、及び圧電素子 | |
JP2013131572A (ja) | 液体噴射ヘッド、液体噴射装置及び圧電素子 | |
JP2013098442A (ja) | 液体噴射ヘッド、液体噴射装置、及び圧電素子 | |
JP6015892B2 (ja) | 圧電素子、液体噴射ヘッド、液体噴射装置、超音波デバイス及びセンサー | |
JP5790922B2 (ja) | 圧電素子、液体噴射ヘッド、液体噴射装置、超音波デバイス及びセンサー | |
JP2013118231A (ja) | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 | |
JP5915848B2 (ja) | 圧電素子の製造方法、液体噴射ヘッドの製造方法、液体噴射装置の製造方法、超音波デバイスの製造方法及びセンサーの製造方法 | |
JP2015061048A (ja) | 液体噴射ヘッド、液体噴射装置及び圧電素子 | |
JP5880821B2 (ja) | 液体噴射ヘッド、液体噴射装置、及び圧電素子 | |
JP2014116625A (ja) | 圧電素子、およびその製造方法 | |
JP2013080882A (ja) | 液体噴射ヘッドの製造方法、液体噴射装置の製造方法及び圧電素子の製造方法 | |
JP2013055276A (ja) | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141023 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20141023 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20150422 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150903 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150909 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151106 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20160302 |
|
A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20170904 |