JP2011181961A5 - - Google Patents

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Publication number
JP2011181961A5
JP2011181961A5 JP2011128659A JP2011128659A JP2011181961A5 JP 2011181961 A5 JP2011181961 A5 JP 2011181961A5 JP 2011128659 A JP2011128659 A JP 2011128659A JP 2011128659 A JP2011128659 A JP 2011128659A JP 2011181961 A5 JP2011181961 A5 JP 2011181961A5
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JP
Japan
Prior art keywords
metal
layer
nitride
light emitting
based light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011128659A
Other languages
English (en)
Japanese (ja)
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JP2011181961A (ja
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Publication date
Priority claimed from KR1020030058841A external-priority patent/KR100624411B1/ko
Application filed filed Critical
Publication of JP2011181961A publication Critical patent/JP2011181961A/ja
Publication of JP2011181961A5 publication Critical patent/JP2011181961A5/ja
Pending legal-status Critical Current

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JP2011128659A 2003-08-25 2011-06-08 窒化物系発光素子及びその製造方法 Pending JP2011181961A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020030058841A KR100624411B1 (ko) 2003-08-25 2003-08-25 질화물계 발광소자 및 그 제조방법
KR2003-058841 2003-08-25

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2004245933A Division JP2005072603A (ja) 2003-08-25 2004-08-25 窒化物系発光素子及びその製造方法

Publications (2)

Publication Number Publication Date
JP2011181961A JP2011181961A (ja) 2011-09-15
JP2011181961A5 true JP2011181961A5 (https=) 2012-07-05

Family

ID=34101837

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2004245933A Pending JP2005072603A (ja) 2003-08-25 2004-08-25 窒化物系発光素子及びその製造方法
JP2011128659A Pending JP2011181961A (ja) 2003-08-25 2011-06-08 窒化物系発光素子及びその製造方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2004245933A Pending JP2005072603A (ja) 2003-08-25 2004-08-25 窒化物系発光素子及びその製造方法

Country Status (5)

Country Link
US (1) US7462877B2 (https=)
EP (1) EP1511091B1 (https=)
JP (2) JP2005072603A (https=)
KR (1) KR100624411B1 (https=)
CN (1) CN100361324C (https=)

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KR100571816B1 (ko) * 2003-09-08 2006-04-17 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
KR100647278B1 (ko) 2003-10-27 2006-11-17 삼성전자주식회사 ＩＩＩ - Ｖ 족 ＧａＮ 계 화합물 반도체 및 이에적용되는 ｐ-형 전극
KR100601971B1 (ko) * 2003-12-22 2006-07-18 삼성전자주식회사 탑에미트형 질화물계 발광소자 및 그 제조방법
KR20050082040A (ko) * 2004-02-17 2005-08-22 어드밴스드 에피텍시 테크날리지 발광다이오드 제조방법
TWI292631B (en) * 2005-02-05 2008-01-11 Epistar Corp Light emitting diode and method of the same
CN1909238B (zh) * 2005-08-03 2010-11-03 三星电机株式会社 具有保护元件的发光装置及该发光装置的制造方法
EP1750309A3 (en) * 2005-08-03 2009-07-29 Samsung Electro-mechanics Co., Ltd Light emitting device having protection element
JP2007157853A (ja) * 2005-12-01 2007-06-21 Sony Corp 半導体発光素子およびその製造方法
JP2007157852A (ja) * 2005-12-01 2007-06-21 Sony Corp 半導体発光素子およびその製造方法
US7501295B2 (en) * 2006-05-25 2009-03-10 Philips Lumileds Lighting Company, Llc Method of fabricating a reflective electrode for a semiconductor light emitting device
JP5197186B2 (ja) 2008-06-30 2013-05-15 株式会社東芝 半導体発光装置
CN101728451B (zh) * 2008-10-21 2013-10-30 展晶科技(深圳)有限公司 半导体光电元件
JP5498723B2 (ja) * 2009-04-10 2014-05-21 スタンレー電気株式会社 酸化亜鉛系半導体素子及びその製造方法
JP5845557B2 (ja) * 2010-03-30 2016-01-20 ソニー株式会社 半導体発光素子の製造方法
EP2555257A1 (en) * 2010-04-01 2013-02-06 Panasonic Corporation Nitride semiconductor element and manufacturing method therefor
JP4820465B1 (ja) * 2010-04-02 2011-11-24 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP5132739B2 (ja) * 2010-09-06 2013-01-30 株式会社東芝 半導体素子
WO2012071107A1 (en) * 2010-11-23 2012-05-31 Qd Vision, Inc. Device including semiconductor nanocrystals & method
JP5646423B2 (ja) * 2011-09-26 2014-12-24 株式会社東芝 半導体発光装置及びその製造方法
EP2745333B8 (en) * 2011-11-07 2018-09-05 Lumileds Holding B.V. Improved p-contact with more uniform injection and lower optical loss
JP2013062535A (ja) * 2012-12-18 2013-04-04 Toshiba Corp 半導体発光装置及びその製造方法
KR20140140166A (ko) * 2013-05-28 2014-12-09 포항공과대학교 산학협력단 발광 다이오드
CN109037200B (zh) * 2018-07-18 2020-06-30 易美芯光（北京）科技有限公司 Led阵列结构及其制备方法
US20260033048A1 (en) * 2024-07-29 2026-01-29 Creeled, Inc. Reflective structures for light-emitting diode chips and related methods

Family Cites Families (24)

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JP3754120B2 (ja) * 1996-02-27 2006-03-08 株式会社東芝 半導体発光装置
JP3499385B2 (ja) * 1996-11-02 2004-02-23 豊田合成株式会社 ３族窒化物半導体の電極形成方法
JP3737226B2 (ja) * 1996-12-24 2006-01-18 ローム株式会社 半導体発光素子
JPH10308533A (ja) * 1997-05-09 1998-11-17 Toshiba Corp 窒化ガリウム系化合物半導体発光素子およびその製造方法ならびに発光装置
JP4183299B2 (ja) * 1998-03-25 2008-11-19 株式会社東芝 窒化ガリウム系化合物半導体発光素子
DE19921987B4 (de) 1998-05-13 2007-05-16 Toyoda Gosei Kk Licht-Abstrahlende Halbleitervorrichtung mit Gruppe-III-Element-Nitrid-Verbindungen
JP3736181B2 (ja) 1998-05-13 2006-01-18 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
US6287947B1 (en) * 1999-06-08 2001-09-11 Lumileds Lighting, U.S. Llc Method of forming transparent contacts to a p-type GaN layer
US6992334B1 (en) 1999-12-22 2006-01-31 Lumileds Lighting U.S., Llc Multi-layer highly reflective ohmic contacts for semiconductor devices
US6903376B2 (en) * 1999-12-22 2005-06-07 Lumileds Lighting U.S., Llc Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
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JP3795298B2 (ja) * 2000-03-31 2006-07-12 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法
US6693352B1 (en) * 2000-06-05 2004-02-17 Emitronix Inc. Contact structure for group III-V semiconductor devices and method of producing the same
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JP2002170990A (ja) * 2000-12-04 2002-06-14 Nippon Telegr & Teleph Corp <Ntt> 窒化物半導体へのｐ型オーム性接合形成方法
JP4925512B2 (ja) * 2001-02-16 2012-04-25 スタンレー電気株式会社 波長変換型半導体素子
JP5283293B2 (ja) 2001-02-21 2013-09-04 ソニー株式会社 半導体発光素子
JP3972670B2 (ja) * 2002-02-06 2007-09-05 豊田合成株式会社 発光装置
KR100612832B1 (ko) * 2003-05-07 2006-08-18 삼성전자주식회사 고성능의 질화갈륨계 광소자 구현을 위한 니켈계 고용체를 이용한 오믹 접촉 형성을 위한 금속박막 및 그 제조방법
US6969874B1 (en) * 2003-06-12 2005-11-29 Sandia Corporation Flip-chip light emitting diode with resonant optical microcavity
KR100568269B1 (ko) * 2003-06-23 2006-04-05 삼성전기주식회사 플립-칩 본딩용 질화갈륨계 발광 다이오드 및 그 제조방법
US20050072968A1 (en) * 2003-10-06 2005-04-07 Tzong-Liang Tsai Light-emitting device
KR100571818B1 (ko) * 2003-10-08 2006-04-17 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
US7009215B2 (en) * 2003-10-24 2006-03-07 General Electric Company Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates

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