JP2012080143A5 - - Google Patents
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- Publication number
- JP2012080143A5 JP2012080143A5 JP2012015065A JP2012015065A JP2012080143A5 JP 2012080143 A5 JP2012080143 A5 JP 2012080143A5 JP 2012015065 A JP2012015065 A JP 2012015065A JP 2012015065 A JP2012015065 A JP 2012015065A JP 2012080143 A5 JP2012080143 A5 JP 2012080143A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- light emitting
- semiconductor layer
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 41
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 239000010948 rhodium Substances 0.000 claims description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 34
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012015065A JP5395916B2 (ja) | 2012-01-27 | 2012-01-27 | 半導体発光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012015065A JP5395916B2 (ja) | 2012-01-27 | 2012-01-27 | 半導体発光素子 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009195936A Division JP5258707B2 (ja) | 2009-08-26 | 2009-08-26 | 半導体発光素子 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013168118A Division JP5774650B2 (ja) | 2013-08-13 | 2013-08-13 | 半導体発光素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012080143A JP2012080143A (ja) | 2012-04-19 |
| JP2012080143A5 true JP2012080143A5 (https=) | 2012-09-20 |
| JP5395916B2 JP5395916B2 (ja) | 2014-01-22 |
Family
ID=46239942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012015065A Expired - Fee Related JP5395916B2 (ja) | 2012-01-27 | 2012-01-27 | 半導体発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5395916B2 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5734935B2 (ja) * | 2012-09-20 | 2015-06-17 | 株式会社東芝 | 半導体装置及びその製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5008262B2 (ja) * | 2005-03-02 | 2012-08-22 | 日亜化学工業株式会社 | 半導体発光素子 |
| KR100723150B1 (ko) * | 2005-12-26 | 2007-05-30 | 삼성전기주식회사 | 수직구조 질화물 반도체 발광소자 및 제조방법 |
| KR100778820B1 (ko) * | 2006-04-25 | 2007-11-22 | 포항공과대학교 산학협력단 | 금속 전극 형성 방법 및 반도체 발광 소자의 제조 방법 및질화물계 화합물 반도체 발광 소자 |
| JP4782022B2 (ja) * | 2007-01-09 | 2011-09-28 | 株式会社豊田中央研究所 | 電極の形成方法 |
| JP5139005B2 (ja) * | 2007-08-22 | 2013-02-06 | 株式会社東芝 | 半導体発光素子及び半導体発光装置 |
-
2012
- 2012-01-27 JP JP2012015065A patent/JP5395916B2/ja not_active Expired - Fee Related
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