JP5395916B2 - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

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Publication number
JP5395916B2
JP5395916B2 JP2012015065A JP2012015065A JP5395916B2 JP 5395916 B2 JP5395916 B2 JP 5395916B2 JP 2012015065 A JP2012015065 A JP 2012015065A JP 2012015065 A JP2012015065 A JP 2012015065A JP 5395916 B2 JP5395916 B2 JP 5395916B2
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Japan
Prior art keywords
layer
light emitting
semiconductor
electrode
metal layer
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Japanese (ja)
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JP2012080143A5 (https=
JP2012080143A (ja
Inventor
弘 勝野
康夫 大場
桂 金子
光弘 櫛部
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Toshiba Corp
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Toshiba Corp
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JP2012015065A 2012-01-27 2012-01-27 半導体発光素子 Expired - Fee Related JP5395916B2 (ja)

Priority Applications (1)

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JP2012015065A JP5395916B2 (ja) 2012-01-27 2012-01-27 半導体発光素子

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JP2012015065A JP5395916B2 (ja) 2012-01-27 2012-01-27 半導体発光素子

Related Parent Applications (1)

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JP2009195936A Division JP5258707B2 (ja) 2009-08-26 2009-08-26 半導体発光素子

Related Child Applications (1)

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JP2013168118A Division JP5774650B2 (ja) 2013-08-13 2013-08-13 半導体発光素子

Publications (3)

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JP2012080143A JP2012080143A (ja) 2012-04-19
JP2012080143A5 JP2012080143A5 (https=) 2012-09-20
JP5395916B2 true JP5395916B2 (ja) 2014-01-22

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JP2012015065A Expired - Fee Related JP5395916B2 (ja) 2012-01-27 2012-01-27 半導体発光素子

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5734935B2 (ja) * 2012-09-20 2015-06-17 株式会社東芝 半導体装置及びその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5008262B2 (ja) * 2005-03-02 2012-08-22 日亜化学工業株式会社 半導体発光素子
KR100723150B1 (ko) * 2005-12-26 2007-05-30 삼성전기주식회사 수직구조 질화물 반도체 발광소자 및 제조방법
KR100778820B1 (ko) * 2006-04-25 2007-11-22 포항공과대학교 산학협력단 금속 전극 형성 방법 및 반도체 발광 소자의 제조 방법 및질화물계 화합물 반도체 발광 소자
JP4782022B2 (ja) * 2007-01-09 2011-09-28 株式会社豊田中央研究所 電極の形成方法
JP5139005B2 (ja) * 2007-08-22 2013-02-06 株式会社東芝 半導体発光素子及び半導体発光装置

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JP2012080143A (ja) 2012-04-19

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