KR100624411B1 - 질화물계 발광소자 및 그 제조방법 - Google Patents

질화물계 발광소자 및 그 제조방법 Download PDF

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Publication number
KR100624411B1
KR100624411B1 KR1020030058841A KR20030058841A KR100624411B1 KR 100624411 B1 KR100624411 B1 KR 100624411B1 KR 1020030058841 A KR1020030058841 A KR 1020030058841A KR 20030058841 A KR20030058841 A KR 20030058841A KR 100624411 B1 KR100624411 B1 KR 100624411B1
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KR
South Korea
Prior art keywords
layer
metal
light emitting
emitting device
nitride
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Expired - Fee Related
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KR1020030058841A
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English (en)
Korean (ko)
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KR20050022242A (ko
Inventor
송준오
성태연
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삼성전자주식회사
광주과학기술원
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Application filed by 삼성전자주식회사, 광주과학기술원 filed Critical 삼성전자주식회사
Priority to KR1020030058841A priority Critical patent/KR100624411B1/ko
Priority to US10/891,014 priority patent/US7462877B2/en
Priority to EP04254402.3A priority patent/EP1511091B1/en
Priority to CNB2004100545391A priority patent/CN100361324C/zh
Priority to JP2004245933A priority patent/JP2005072603A/ja
Publication of KR20050022242A publication Critical patent/KR20050022242A/ko
Application granted granted Critical
Publication of KR100624411B1 publication Critical patent/KR100624411B1/ko
Assigned to 삼성엘이디 주식회사 reassignment 삼성엘이디 주식회사 권리지분의 전부이전등록 Assignors: 삼성전자주식회사
Priority to JP2011128659A priority patent/JP2011181961A/ja
Assigned to 삼성전자주식회사 reassignment 삼성전자주식회사 권리지분의 전부이전등록 Assignors: 삼성엘이디 주식회사
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
KR1020030058841A 2003-08-25 2003-08-25 질화물계 발광소자 및 그 제조방법 Expired - Fee Related KR100624411B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020030058841A KR100624411B1 (ko) 2003-08-25 2003-08-25 질화물계 발광소자 및 그 제조방법
US10/891,014 US7462877B2 (en) 2003-08-25 2004-07-15 Nitride-based light emitting device, and method of manufacturing the same
CNB2004100545391A CN100361324C (zh) 2003-08-25 2004-07-23 氮化物基发光器件及其制造方法
EP04254402.3A EP1511091B1 (en) 2003-08-25 2004-07-23 Nitride-based light emitting device, and method of manufacturing the same
JP2004245933A JP2005072603A (ja) 2003-08-25 2004-08-25 窒化物系発光素子及びその製造方法
JP2011128659A JP2011181961A (ja) 2003-08-25 2011-06-08 窒化物系発光素子及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030058841A KR100624411B1 (ko) 2003-08-25 2003-08-25 질화물계 발광소자 및 그 제조방법

Publications (2)

Publication Number Publication Date
KR20050022242A KR20050022242A (ko) 2005-03-07
KR100624411B1 true KR100624411B1 (ko) 2006-09-18

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Family Applications (1)

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KR1020030058841A Expired - Fee Related KR100624411B1 (ko) 2003-08-25 2003-08-25 질화물계 발광소자 및 그 제조방법

Country Status (5)

Country Link
US (1) US7462877B2 (https=)
EP (1) EP1511091B1 (https=)
JP (2) JP2005072603A (https=)
KR (1) KR100624411B1 (https=)
CN (1) CN100361324C (https=)

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KR100647278B1 (ko) 2003-10-27 2006-11-17 삼성전자주식회사 ＩＩＩ - Ｖ 족 ＧａＮ 계 화합물 반도체 및 이에적용되는 ｐ-형 전극
KR100601971B1 (ko) * 2003-12-22 2006-07-18 삼성전자주식회사 탑에미트형 질화물계 발광소자 및 그 제조방법
KR20050082040A (ko) * 2004-02-17 2005-08-22 어드밴스드 에피텍시 테크날리지 발광다이오드 제조방법
TWI292631B (en) * 2005-02-05 2008-01-11 Epistar Corp Light emitting diode and method of the same
CN1909238B (zh) * 2005-08-03 2010-11-03 三星电机株式会社 具有保护元件的发光装置及该发光装置的制造方法
EP1750309A3 (en) * 2005-08-03 2009-07-29 Samsung Electro-mechanics Co., Ltd Light emitting device having protection element
JP2007157853A (ja) * 2005-12-01 2007-06-21 Sony Corp 半導体発光素子およびその製造方法
JP2007157852A (ja) * 2005-12-01 2007-06-21 Sony Corp 半導体発光素子およびその製造方法
US7501295B2 (en) * 2006-05-25 2009-03-10 Philips Lumileds Lighting Company, Llc Method of fabricating a reflective electrode for a semiconductor light emitting device
JP5197186B2 (ja) 2008-06-30 2013-05-15 株式会社東芝 半導体発光装置
CN101728451B (zh) * 2008-10-21 2013-10-30 展晶科技(深圳)有限公司 半导体光电元件
JP5498723B2 (ja) * 2009-04-10 2014-05-21 スタンレー電気株式会社 酸化亜鉛系半導体素子及びその製造方法
JP5845557B2 (ja) * 2010-03-30 2016-01-20 ソニー株式会社 半導体発光素子の製造方法
EP2555257A1 (en) * 2010-04-01 2013-02-06 Panasonic Corporation Nitride semiconductor element and manufacturing method therefor
JP4820465B1 (ja) * 2010-04-02 2011-11-24 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP5132739B2 (ja) * 2010-09-06 2013-01-30 株式会社東芝 半導体素子
WO2012071107A1 (en) * 2010-11-23 2012-05-31 Qd Vision, Inc. Device including semiconductor nanocrystals & method
JP5646423B2 (ja) * 2011-09-26 2014-12-24 株式会社東芝 半導体発光装置及びその製造方法
EP2745333B8 (en) * 2011-11-07 2018-09-05 Lumileds Holding B.V. Improved p-contact with more uniform injection and lower optical loss
JP2013062535A (ja) * 2012-12-18 2013-04-04 Toshiba Corp 半導体発光装置及びその製造方法
KR20140140166A (ko) * 2013-05-28 2014-12-09 포항공과대학교 산학협력단 발광 다이오드
CN109037200B (zh) * 2018-07-18 2020-06-30 易美芯光（北京）科技有限公司 Led阵列结构及其制备方法
US20260033048A1 (en) * 2024-07-29 2026-01-29 Creeled, Inc. Reflective structures for light-emitting diode chips and related methods

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JP3754120B2 (ja) * 1996-02-27 2006-03-08 株式会社東芝 半導体発光装置
JP3499385B2 (ja) * 1996-11-02 2004-02-23 豊田合成株式会社 ３族窒化物半導体の電極形成方法
JP3737226B2 (ja) * 1996-12-24 2006-01-18 ローム株式会社 半導体発光素子
JPH10308533A (ja) * 1997-05-09 1998-11-17 Toshiba Corp 窒化ガリウム系化合物半導体発光素子およびその製造方法ならびに発光装置
JP4183299B2 (ja) * 1998-03-25 2008-11-19 株式会社東芝 窒化ガリウム系化合物半導体発光素子
DE19921987B4 (de) 1998-05-13 2007-05-16 Toyoda Gosei Kk Licht-Abstrahlende Halbleitervorrichtung mit Gruppe-III-Element-Nitrid-Verbindungen
JP3736181B2 (ja) 1998-05-13 2006-01-18 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
US6287947B1 (en) * 1999-06-08 2001-09-11 Lumileds Lighting, U.S. Llc Method of forming transparent contacts to a p-type GaN layer
US6992334B1 (en) 1999-12-22 2006-01-31 Lumileds Lighting U.S., Llc Multi-layer highly reflective ohmic contacts for semiconductor devices
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JP3795298B2 (ja) * 2000-03-31 2006-07-12 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法
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JP4925512B2 (ja) * 2001-02-16 2012-04-25 スタンレー電気株式会社 波長変換型半導体素子
JP5283293B2 (ja) 2001-02-21 2013-09-04 ソニー株式会社 半導体発光素子
JP3972670B2 (ja) * 2002-02-06 2007-09-05 豊田合成株式会社 発光装置
KR100612832B1 (ko) * 2003-05-07 2006-08-18 삼성전자주식회사 고성능의 질화갈륨계 광소자 구현을 위한 니켈계 고용체를 이용한 오믹 접촉 형성을 위한 금속박막 및 그 제조방법
US6969874B1 (en) * 2003-06-12 2005-11-29 Sandia Corporation Flip-chip light emitting diode with resonant optical microcavity
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US20050072968A1 (en) * 2003-10-06 2005-04-07 Tzong-Liang Tsai Light-emitting device
KR100571818B1 (ko) * 2003-10-08 2006-04-17 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
US7009215B2 (en) * 2003-10-24 2006-03-07 General Electric Company Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates

Also Published As

Publication number Publication date
JP2011181961A (ja) 2011-09-15
EP1511091A2 (en) 2005-03-02
JP2005072603A (ja) 2005-03-17
US20050045907A1 (en) 2005-03-03
US7462877B2 (en) 2008-12-09
EP1511091A3 (en) 2006-12-13
EP1511091B1 (en) 2014-01-01
CN100361324C (zh) 2008-01-09
KR20050022242A (ko) 2005-03-07
CN1591917A (zh) 2005-03-09

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