JP2011171703A - 電圧調整回路 - Google Patents

電圧調整回路 Download PDF

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Publication number
JP2011171703A
JP2011171703A JP2010240683A JP2010240683A JP2011171703A JP 2011171703 A JP2011171703 A JP 2011171703A JP 2010240683 A JP2010240683 A JP 2010240683A JP 2010240683 A JP2010240683 A JP 2010240683A JP 2011171703 A JP2011171703 A JP 2011171703A
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JP
Japan
Prior art keywords
transistor
layer
oxide semiconductor
source
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2010240683A
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English (en)
Japanese (ja)
Other versions
JP2011171703A5 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Jun Koyama
潤 小山
Kei Takahashi
圭 高橋
Masashi Tsubuki
将志 津吹
Kosei Noda
耕生 野田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2010240683A priority Critical patent/JP2011171703A/ja
Publication of JP2011171703A publication Critical patent/JP2011171703A/ja
Publication of JP2011171703A5 publication Critical patent/JP2011171703A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dc-Dc Converters (AREA)
JP2010240683A 2009-10-30 2010-10-27 電圧調整回路 Withdrawn JP2011171703A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010240683A JP2011171703A (ja) 2009-10-30 2010-10-27 電圧調整回路

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2009250396 2009-10-30
JP2009250396 2009-10-30
JP2010012618 2010-01-22
JP2010012618 2010-01-22
JP2010240683A JP2011171703A (ja) 2009-10-30 2010-10-27 電圧調整回路

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015005326A Division JP5938116B2 (ja) 2009-10-30 2015-01-14 電圧調整回路

Publications (2)

Publication Number Publication Date
JP2011171703A true JP2011171703A (ja) 2011-09-01
JP2011171703A5 JP2011171703A5 (enExample) 2013-10-31

Family

ID=43921792

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2010240683A Withdrawn JP2011171703A (ja) 2009-10-30 2010-10-27 電圧調整回路
JP2015005326A Expired - Fee Related JP5938116B2 (ja) 2009-10-30 2015-01-14 電圧調整回路
JP2016096785A Active JP6122529B2 (ja) 2009-10-30 2016-05-13 電圧調整回路

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2015005326A Expired - Fee Related JP5938116B2 (ja) 2009-10-30 2015-01-14 電圧調整回路
JP2016096785A Active JP6122529B2 (ja) 2009-10-30 2016-05-13 電圧調整回路

Country Status (5)

Country Link
US (2) US8766608B2 (enExample)
JP (3) JP2011171703A (enExample)
KR (1) KR101751712B1 (enExample)
TW (2) TWI493311B (enExample)
WO (1) WO2011052366A1 (enExample)

Cited By (8)

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WO2013054823A1 (en) * 2011-10-14 2013-04-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2013093565A (ja) * 2011-10-07 2013-05-16 Semiconductor Energy Lab Co Ltd 半導体装置
JP2013201428A (ja) * 2012-02-23 2013-10-03 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US9450199B2 (en) 2013-02-08 2016-09-20 Samsung Display Co., Ltd. Method of forming nano crystals and method of manufacturing organic light-emitting display apparatus including thin film having the same
JP2016174176A (ja) * 2016-05-31 2016-09-29 株式会社半導体エネルギー研究所 半導体装置
WO2019066931A1 (en) * 2017-09-29 2019-04-04 Intel Corporation VOLTAGE REGULATOR CIRCUIT COMPRISING ONE OR MORE THIN FILM TRANSISTORS
JP2020194969A (ja) * 2011-09-29 2020-12-03 株式会社半導体エネルギー研究所 半導体装置
JPWO2019142080A1 (ja) * 2018-01-19 2021-02-04 株式会社半導体エネルギー研究所 半導体装置の作製方法

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JP5730529B2 (ja) 2009-10-21 2015-06-10 株式会社半導体エネルギー研究所 半導体装置
WO2011052366A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
WO2011068025A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Dc converter circuit and power supply circuit
KR101805378B1 (ko) 2010-01-24 2017-12-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치와 이의 제조 방법
US8637802B2 (en) 2010-06-18 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Photosensor, semiconductor device including photosensor, and light measurement method using photosensor
US9362820B2 (en) 2010-10-07 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. DCDC converter, semiconductor device, and power generation device
JP6013680B2 (ja) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 半導体装置
JP6030334B2 (ja) 2011-05-20 2016-11-24 株式会社半導体エネルギー研究所 記憶装置
TWI580189B (zh) 2011-12-23 2017-04-21 半導體能源研究所股份有限公司 位準位移電路及半導體積體電路
JP6243136B2 (ja) 2012-05-02 2017-12-06 株式会社半導体エネルギー研究所 スイッチングコンバータ
US8947158B2 (en) 2012-09-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
WO2014065389A1 (en) * 2012-10-25 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Central control system
US9007092B2 (en) 2013-03-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9246476B2 (en) 2013-05-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit
TWI663820B (zh) 2013-08-21 2019-06-21 日商半導體能源研究所股份有限公司 電荷泵電路以及具備電荷泵電路的半導體裝置
JP6523695B2 (ja) * 2014-02-05 2019-06-05 株式会社半導体エネルギー研究所 半導体装置
JP6462404B2 (ja) 2014-02-28 2019-01-30 株式会社半導体エネルギー研究所 Ｄｃｄｃコンバータ、半導体装置、及び電子機器
US9537478B2 (en) 2014-03-06 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102267237B1 (ko) 2014-03-07 2021-06-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US9312280B2 (en) 2014-07-25 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10071904B2 (en) * 2014-09-25 2018-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display module, and electronic device
US9698170B2 (en) 2014-10-07 2017-07-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display module, and electronic device
US10068927B2 (en) 2014-10-23 2018-09-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display module, and electronic device
DE102014226716A1 (de) * 2014-12-19 2016-06-23 Dialog Semiconductor (Uk) Limited Spannungsverdoppler und Spannungsverdopplungsverfahren zur Verwendung im PMW-Modus
US9633710B2 (en) 2015-01-23 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Method for operating semiconductor device
US10453404B2 (en) 2016-08-17 2019-10-22 Semiconductor Energy Laboratory Co., Ltd. Display method, display device, display module, and electronic device
CN114258633A (zh) 2019-08-29 2022-03-29 株式会社半导体能源研究所 半导体装置及其工作方法
US11379231B2 (en) 2019-10-25 2022-07-05 Semiconductor Energy Laboratory Co., Ltd. Data processing system and operation method of data processing system
CN114280863B (zh) * 2021-12-17 2024-04-12 滁州惠科光电科技有限公司 阵列基板及显示面板

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