JP2011165810A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 94
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 37
- 238000007772 electroless plating Methods 0.000 claims abstract description 24
- 239000003054 catalyst Substances 0.000 claims abstract description 20
- 230000004913 activation Effects 0.000 claims abstract description 12
- 150000002500 ions Chemical class 0.000 claims abstract description 5
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 21
- 238000000137 annealing Methods 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 abstract description 18
- 239000002184 metal Substances 0.000 abstract description 18
- 239000007788 liquid Substances 0.000 abstract description 8
- 239000000853 adhesive Substances 0.000 abstract description 2
- 230000001070 adhesive effect Effects 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 44
- 238000007747 plating Methods 0.000 description 21
- 238000001994 activation Methods 0.000 description 11
- 238000009713 electroplating Methods 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- -1 inorganic acid salts Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 150000002941 palladium compounds Chemical class 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- C23C18/168—Control of temperature, e.g. temperature of bath, substrate
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Abstract
【解決手段】Pdイオンを含むPd活性化液28(塩化パラジウム)にGaAs基板16(半導体基板)を浸漬してGaAs基板の表面にPdキャタリスト30を付着させる。このPdキャタリストとGaAs基板が反応してPd−Ga−Asの混合層40が形成される。次に、表面にPdキャタリストが付着されたGaAs基板をPd無電解めっき液42に浸漬してGaAs基板上にPdめっき膜44を形成する。
【選択図】図10
Description
本発明の実施の形態1に係る半導体装置の製造方法について説明する。図4〜12は実施の形態1に係る半導体装置の製造方法を説明するための断面図である。
実施の形態2に係る半導体装置の製造方法について図面を参照しながら説明する。図16は実施の形態2に係る半導体装置の製造方法を説明するための上面図であり、図17は断面図である。
18 電極
24 ビア
28 Pd活性化液
30 Pdキャタリスト
42 Pd無電解めっき液
44 Pdめっき膜
54 段差
Claims (8)
- Pdイオンを含むPd活性化液に半導体基板を浸漬して前記半導体基板の表面にPdキャタリストを付着させる工程と、
表面にPdキャタリストが付着された前記半導体基板をPd無電解めっき液に浸漬して前記半導体基板上にPd無電解めっき膜を形成する工程とを備えることを特徴とする半導体装置の製造方法。 - 前記半導体基板はGaAs基板であることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記Pd活性化液は塩化パラジウム溶液であることを特徴とする請求項1又は2に記載の半導体装置の製造方法。
- 前記Pd無電解めっき液を20℃以上にすることを特徴とする請求項1〜3の何れか1項に記載の半導体装置の製造方法。
- 前記Pd無電解めっき膜を形成した後に250℃〜350℃でアニールを行う工程を更に備えることを特徴とする請求項1〜4の何れか1項に記載の半導体装置の製造方法。
- 前記アニールを300℃〜350℃で行うことを特徴とする請求項5に記載の半導体装置の製造方法。
- 前記半導体基板の上面に電極を形成する工程を更に備え、
前記半導体基板を貫通して前記半導体基板の裏面から前記電極の裏面まで達するビアを形成し、
前記Pd無電解めっき膜を、前記半導体基板の前記裏面と前記ビアの側面と前記電極の前記裏面に形成することを特徴とする請求項1〜6の何れか1項に記載の半導体装置の製造方法。 - 前記半導体基板に段差を形成する工程を更に備え、
前記Pd無電解めっき膜を、前記半導体基板の前記段差の平坦部及び側面部に形成することを特徴とする請求項1〜6の何れか1項に記載の半導体装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010025464A JP5663886B2 (ja) | 2010-02-08 | 2010-02-08 | 半導体装置の製造方法 |
TW099128060A TWI423337B (zh) | 2010-02-08 | 2010-08-23 | 半導體裝置之製造方法 |
US12/871,971 US8158507B2 (en) | 2010-02-08 | 2010-08-31 | Method for manufacturing semiconductor device |
KR1020110003794A KR101227020B1 (ko) | 2010-02-08 | 2011-01-14 | 반도체장치의 제조방법 |
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JP2010025464A JP5663886B2 (ja) | 2010-02-08 | 2010-02-08 | 半導体装置の製造方法 |
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JP2011165810A true JP2011165810A (ja) | 2011-08-25 |
JP5663886B2 JP5663886B2 (ja) | 2015-02-04 |
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JP (1) | JP5663886B2 (ja) |
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JP2014112634A (ja) * | 2012-10-30 | 2014-06-19 | Mitsubishi Electric Corp | 半導体素子の製造方法、半導体素子 |
WO2015145815A1 (ja) * | 2014-03-27 | 2015-10-01 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法 |
WO2022162804A1 (ja) * | 2021-01-27 | 2022-08-04 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
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EP2740818B1 (en) * | 2012-12-05 | 2016-03-30 | ATOTECH Deutschland GmbH | Method for manufacture of wire bondable and solderable surfaces on noble metal electrodes |
CN105671526B (zh) * | 2016-01-22 | 2018-05-22 | 卓达新材料科技集团有限公司 | 一种镀金属膜的聚合物材料 |
JP6648544B2 (ja) * | 2016-02-08 | 2020-02-14 | 三菱電機株式会社 | 半導体装置 |
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WO2022162804A1 (ja) * | 2021-01-27 | 2022-08-04 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP7464152B2 (ja) | 2021-01-27 | 2024-04-09 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
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US20110195567A1 (en) | 2011-08-11 |
KR20110092212A (ko) | 2011-08-17 |
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TW201133625A (en) | 2011-10-01 |
TWI423337B (zh) | 2014-01-11 |
US8158507B2 (en) | 2012-04-17 |
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