JP2007157883A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP2007157883A JP2007157883A JP2005348930A JP2005348930A JP2007157883A JP 2007157883 A JP2007157883 A JP 2007157883A JP 2005348930 A JP2005348930 A JP 2005348930A JP 2005348930 A JP2005348930 A JP 2005348930A JP 2007157883 A JP2007157883 A JP 2007157883A
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- gaas substrate
- film
- nigaas
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 63
- 238000007747 plating Methods 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- 239000010931 gold Substances 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 9
- 239000012528 membrane Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】GaAs基板1上にNiP膜4を形成し、熱処理することにより、NiP膜4に含まれるNiがGaAs基板1側に拡散する。この結果、GaAs基板1とNiP膜4との界面に、NiGaAs層5が形成される。このとき、NiP膜4に対するNiGaAs層5の膜厚比が1.5未満となるようにする。これにより、GaAs基板1への付着力を高くし、かつ、GaAs基板1に与えるストレスの小さいメッキ給電層(NiP膜4)を得ることができる。
【選択図】図4
Description
本発明に係る半導体装置は、GaAs基板を用いて形成される。以下、この半導体装置の製造方法について説明する。まず、図示しないが、GaAs基板の主面(表面)に、トランジスタなどの素子を形成する。次に、図1に示すように、GaAs基板1の表面側(以下の製造方法の説明図では、GaAs基板1の表面側を下向きに示す)に、ビアホール受けメタル2を形成する。
Claims (4)
- GaAs基板と、
前記GaAs基板のいずれかの面に設けられたNiGaAs層と、
前記NiGaAs層の上に設けられ、Niを含むメッキ給電層と、
前記メッキ給電層の上に設けられた金属メッキ層と、
を有することを特徴とする半導体装置。 - 前記メッキ給電層に対する前記NiGaAs層の膜厚比は、1.5未満であることを特徴とする請求項1に記載の半導体装置。
- 前記メッキ給電層はNiP膜であり、この膜に含まれるリンの含有率は、6wt%以上であることを特徴とする請求項1に記載の半導体装置。
- GaAs基板上にNiを含むメッキ給電層を形成する工程と、
前記Niを前記GaAs基板に拡散させ、前記GaAs基板と前記メッキ給電層との間にNiGaAs層を形成する工程と、
前記メッキ給電層を覆うように金属メッキ層を形成する工程と、
を有することを特徴とする半導体装置の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005348930A JP4637009B2 (ja) | 2005-12-02 | 2005-12-02 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005348930A JP4637009B2 (ja) | 2005-12-02 | 2005-12-02 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007157883A true JP2007157883A (ja) | 2007-06-21 |
JP4637009B2 JP4637009B2 (ja) | 2011-02-23 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2005348930A Active JP4637009B2 (ja) | 2005-12-02 | 2005-12-02 | 半導体装置の製造方法 |
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JP (1) | JP4637009B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8581411B2 (en) | 2009-08-20 | 2013-11-12 | Mitsubishi Electric Corporation | Semiconductor device |
CN103789764A (zh) * | 2012-10-30 | 2014-05-14 | 三菱电机株式会社 | 半导体元件的制造方法、半导体元件 |
WO2023079824A1 (ja) * | 2021-11-04 | 2023-05-11 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5361274A (en) * | 1976-11-12 | 1978-06-01 | Mitsubishi Electric Corp | Production of high frequency semiconductor devce |
JPH02341A (ja) * | 1987-02-02 | 1990-01-05 | Seiko Epson Corp | 半導体装置及びその製造方法 |
JPH0399470A (ja) * | 1989-09-12 | 1991-04-24 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH07193214A (ja) * | 1993-12-27 | 1995-07-28 | Mitsubishi Electric Corp | バイアホール及びその形成方法 |
JPH0897236A (ja) * | 1994-09-27 | 1996-04-12 | Mitsubishi Electric Corp | 半導体装置の電極,及びその製造方法 |
JP2002190477A (ja) * | 2000-12-22 | 2002-07-05 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
-
2005
- 2005-12-02 JP JP2005348930A patent/JP4637009B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5361274A (en) * | 1976-11-12 | 1978-06-01 | Mitsubishi Electric Corp | Production of high frequency semiconductor devce |
JPH02341A (ja) * | 1987-02-02 | 1990-01-05 | Seiko Epson Corp | 半導体装置及びその製造方法 |
JPH0399470A (ja) * | 1989-09-12 | 1991-04-24 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH07193214A (ja) * | 1993-12-27 | 1995-07-28 | Mitsubishi Electric Corp | バイアホール及びその形成方法 |
JPH0897236A (ja) * | 1994-09-27 | 1996-04-12 | Mitsubishi Electric Corp | 半導体装置の電極,及びその製造方法 |
JP2002190477A (ja) * | 2000-12-22 | 2002-07-05 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8581411B2 (en) | 2009-08-20 | 2013-11-12 | Mitsubishi Electric Corporation | Semiconductor device |
CN103789764A (zh) * | 2012-10-30 | 2014-05-14 | 三菱电机株式会社 | 半导体元件的制造方法、半导体元件 |
JP2014112634A (ja) * | 2012-10-30 | 2014-06-19 | Mitsubishi Electric Corp | 半導体素子の製造方法、半導体素子 |
US9048295B2 (en) | 2012-10-30 | 2015-06-02 | Mitsubishi Electric Corporation | Method of manufacturing semiconductor device |
TWI492280B (zh) * | 2012-10-30 | 2015-07-11 | Mitsubishi Electric Corp | 半導體元件之製造方法、半導體元件 |
WO2023079824A1 (ja) * | 2021-11-04 | 2023-05-11 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
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JP4637009B2 (ja) | 2011-02-23 |
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