ATE460752T1 - Verbessertes verfahren zur herstellung von speicherzellen vom typ pmc - Google Patents

Verbessertes verfahren zur herstellung von speicherzellen vom typ pmc

Info

Publication number
ATE460752T1
ATE460752T1 AT06126684T AT06126684T ATE460752T1 AT E460752 T1 ATE460752 T1 AT E460752T1 AT 06126684 T AT06126684 T AT 06126684T AT 06126684 T AT06126684 T AT 06126684T AT E460752 T1 ATE460752 T1 AT E460752T1
Authority
AT
Austria
Prior art keywords
layer
producing
memory cells
improved method
type memory
Prior art date
Application number
AT06126684T
Other languages
English (en)
Inventor
Cyril Dressler
Veronique Sousa
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE460752T1 publication Critical patent/ATE460752T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of switching materials after formation, e.g. doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/55—Structure including two electrodes, a memory active layer and at least two other layers which can be a passive or source or reservoir layer or a less doped memory active layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Multi-Process Working Machines And Systems (AREA)
AT06126684T 2005-12-23 2006-12-20 Verbessertes verfahren zur herstellung von speicherzellen vom typ pmc ATE460752T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0513258A FR2895531B1 (fr) 2005-12-23 2005-12-23 Procede ameliore de realisation de cellules memoires de type pmc

Publications (1)

Publication Number Publication Date
ATE460752T1 true ATE460752T1 (de) 2010-03-15

Family

ID=36956157

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06126684T ATE460752T1 (de) 2005-12-23 2006-12-20 Verbessertes verfahren zur herstellung von speicherzellen vom typ pmc

Country Status (5)

Country Link
US (2) US7833822B2 (de)
EP (1) EP1801897B1 (de)
AT (1) ATE460752T1 (de)
DE (1) DE602006012790D1 (de)
FR (1) FR2895531B1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2880177B1 (fr) * 2004-12-23 2007-05-18 Commissariat Energie Atomique Memoire pmc ayant un temps de retention et une vitesse d'ecriture ameliores
FR2895531B1 (fr) * 2005-12-23 2008-05-09 Commissariat Energie Atomique Procede ameliore de realisation de cellules memoires de type pmc
FR2922368A1 (fr) * 2007-10-16 2009-04-17 Commissariat Energie Atomique Procede de fabrication d'une memoire cbram ayant une fiabilite amelioree
FR2934711B1 (fr) * 2008-07-29 2011-03-11 Commissariat Energie Atomique Dispositif memoire et memoire cbram a fiablilite amelioree.
US20100123117A1 (en) * 2008-11-19 2010-05-20 Seagate Technology Llc Non volatile memory cells including a filament growth layer and methods of forming the same
US20100140578A1 (en) * 2008-12-05 2010-06-10 Seagate Technology Llc Non volatile memory cells including a composite solid electrolyte layer
US8946672B2 (en) * 2009-11-11 2015-02-03 Nec Corporation Resistance changing element capable of operating at low voltage, semiconductor device, and method for forming resistance change element
JP5630021B2 (ja) * 2010-01-19 2014-11-26 ソニー株式会社 記憶素子および記憶装置
JP2012064808A (ja) * 2010-09-16 2012-03-29 Sony Corp 記憶素子および記憶装置
JP2012182172A (ja) * 2011-02-28 2012-09-20 Sony Corp 記憶素子および記憶装置
FR2973554B1 (fr) * 2011-04-04 2013-04-12 Commissariat Energie Atomique "dispositif electronique de type selecteur"
US8962460B2 (en) 2011-04-26 2015-02-24 Micron Technology, Inc. Methods of selectively forming metal-doped chalcogenide materials, methods of selectively doping chalcogenide materials, and methods of forming semiconductor device structures including same
JP2013016530A (ja) * 2011-06-30 2013-01-24 Sony Corp 記憶素子およびその製造方法ならびに記憶装置
US9048415B2 (en) 2012-01-11 2015-06-02 Micron Technology, Inc. Memory cells including top electrodes comprising metal silicide, apparatuses including such cells, and related methods
TWI612701B (zh) * 2017-01-25 2018-01-21 華邦電子股份有限公司 導電橋接式隨機存取記憶體及其製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5761115A (en) 1996-05-30 1998-06-02 Axon Technologies Corporation Programmable metallization cell structure and method of making same
US6015977A (en) * 1997-01-28 2000-01-18 Micron Technology, Inc. Integrated circuit memory cell having a small active area and method of forming same
US6734455B2 (en) 2001-03-15 2004-05-11 Micron Technology, Inc. Agglomeration elimination for metal sputter deposition of chalcogenides
KR100860134B1 (ko) 2001-08-13 2008-09-25 어드밴스드 마이크로 디바이시즈, 인코포레이티드 메모리 셀
US6881623B2 (en) * 2001-08-29 2005-04-19 Micron Technology, Inc. Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device
US6955940B2 (en) * 2001-08-29 2005-10-18 Micron Technology, Inc. Method of forming chalcogenide comprising devices
US6709958B2 (en) * 2001-08-30 2004-03-23 Micron Technology, Inc. Integrated circuit device and fabrication using metal-doped chalcogenide materials
US6566700B2 (en) * 2001-10-11 2003-05-20 Ovonyx, Inc. Carbon-containing interfacial layer for phase-change memory
US7087919B2 (en) * 2002-02-20 2006-08-08 Micron Technology, Inc. Layered resistance variable memory device and method of fabrication
US6864521B2 (en) 2002-08-29 2005-03-08 Micron Technology, Inc. Method to control silver concentration in a resistance variable memory element
US7153721B2 (en) * 2004-01-28 2006-12-26 Micron Technology, Inc. Resistance variable memory elements based on polarized silver-selenide network growth
DE102004046804B4 (de) * 2004-09-27 2006-10-05 Infineon Technologies Ag Resistiv schaltender Halbleiterspeicher
FR2895531B1 (fr) 2005-12-23 2008-05-09 Commissariat Energie Atomique Procede ameliore de realisation de cellules memoires de type pmc

Also Published As

Publication number Publication date
US20100291748A1 (en) 2010-11-18
US8021953B2 (en) 2011-09-20
DE602006012790D1 (de) 2010-04-22
EP1801897A1 (de) 2007-06-27
US20070148882A1 (en) 2007-06-28
FR2895531B1 (fr) 2008-05-09
US7833822B2 (en) 2010-11-16
FR2895531A1 (fr) 2007-06-29
EP1801897B1 (de) 2010-03-10

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Legal Events

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