JP2011129893A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2011129893A JP2011129893A JP2010251809A JP2010251809A JP2011129893A JP 2011129893 A JP2011129893 A JP 2011129893A JP 2010251809 A JP2010251809 A JP 2010251809A JP 2010251809 A JP2010251809 A JP 2010251809A JP 2011129893 A JP2011129893 A JP 2011129893A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- electrode
- oxide semiconductor
- source
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
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Abstract
【解決手段】直列に接続されたメモリセルと、容量素子と、を有し、メモリセルの一は、ビット線及びソース線に接続された第1のトランジスタと、信号線及びワード線に接続された第2のトランジスタと、ワード線、に接続された容量素子とを有し、第2のトランジスタは酸化物半導体層を含み、第1のトランジスタのゲート電極と、第2のトランジスタのソース電極またはドレイン電極の一方と、容量素子の電極の一方とが接続された、半導体装置。
【選択図】図17
Description
本実施の形態では、開示する発明の一態様に係る半導体装置の構成および作製方法について、図1乃至図15を参照して説明する。
図1には、半導体装置の回路構成の一例を示す。当該半導体装置は、酸化物半導体以外の材料を用いたトランジスタ160と酸化物半導体を用いたトランジスタ162によって構成される。なお、図1において、トランジスタ162は、酸化物半導体(Oxide Semiconductor)を用いたことを明示するために、OSの符号を合わせて付している。以下の実施の形態についても同様である。
図2は、上記半導体装置の構成の一例である。図2(A)には、半導体装置の断面図を、図2(B)には、半導体装置の平面図を、それぞれ示す。ここで、図2(A)は、図2(B)の線A1−A2および線B1−B2における断面に相当する。図2(A)および図2(B)に示される半導体装置は、下部に酸化物半導体以外の材料を用いたトランジスタ160を有し、上部に酸化物半導体を用いたトランジスタ162を有するものである。なお、トランジスタ160およびトランジスタ162は、いずれもn型トランジスタとして説明するが、p型トランジスタを採用しても良い。特に、トランジスタ160は、p型とすることが容易である。
次に、上記半導体装置の作製方法の一例について説明する。以下では、はじめに下部のトランジスタ160の作製方法について図3を参照して説明し、その後、上部のトランジスタ162の作製方法について図4および図5を参照して説明する。
まず、半導体材料を含む基板100を用意する(図3(A)参照)。半導体材料を含む基板100としては、シリコンや炭化シリコンなどの単結晶半導体基板、多結晶半導体基板、シリコンゲルマニウムなどの化合物半導体基板、SOI基板などを適用することができる。ここでは、半導体材料を含む基板100として、単結晶シリコン基板を用いる場合の一例について示すものとする。
次に、図4および図5を用いて、層間絶縁層128上にトランジスタ162を作製する工程について説明する。なお、図4および図5は、層間絶縁層128上の各種電極や、トランジスタ162などの作製工程を示すものであるから、トランジスタ162の下部に存在するトランジスタ160等については省略している。
ここで、酸化物半導体を用いたトランジスタの電導機構につき、図6乃至図9を用いて説明する。なお、以下の説明では、理解の容易のため理想的な状況を仮定しており、そのすべてが現実の様子を反映しているとは限らない。また、以下の説明はあくまでも一考察に過ぎず、発明の有効性に影響を与えるものではないことを付記する。
また、図8(B)に示すように、ゲート電極(GE1)に負の電位が与えられると、少数キャリアであるホールは実質的にゼロであるため、電流は限りなくゼロに近い値となる。
開示する発明に係る技術思想は、酸化物半導体層におけるキャリア濃度を十分に小さくし、できるだけ真性(i型)に近づけようとするものである。以下、キャリア濃度の求め方、および、実際に測定したキャリア濃度に関し、図10および図11を参照して説明する。
図12乃至図15には、半導体装置の構成の変形例を示す。なお、以下では、変形例として、トランジスタ162の構成が上記とは異なるものについて説明する。つまり、トランジスタ160の構成は上記と同様である。
本実施の形態では、本発明の一態様に係る半導体装置の回路構成および動作方法について説明する。
半導体装置が有するメモリセル回路図の一例を図16に示す。図16に示すメモリセル200は、第1信号線S1と、ワード線WLと、トランジスタ201(第1のトランジスタ)と、トランジスタ202(第2のトランジスタ)と、容量素子203と、から構成されている。トランジスタ201は、酸化物半導体以外の材料を用いて形成されており、トランジスタ202は酸化物半導体を用いて形成されている。ここで、トランジスタ201は、実施の形態1に示すトランジスタ160と同様の構成とするのが好ましい。また、トランジスタ202は、実施の形態1に示すトランジスタ162と同様の構成とするのが好ましい。また、メモリセル200は、ソース線SL及びビット線BLと電気的に接続されており、トランジスタ(他のメモリセルを構成するものも含む。)を介して、ソース線SL及びビット線BLと電気的に接続されていてもよい。
図17に、m×nビットの記憶容量を有する半導体装置のブロック回路図を示す。ここでは一例として、メモリセル200が直列に接続されたNAND型の半導体装置を示す。
次に、図17に示した半導体装置の動作について説明する。本構成では、書き込みは列ごと、読み出しは行ごとに行う。
VA=(C1・VWL(書)+C2・VWL(読))/(C1+C2)
読み出しが選択状態、データ”1”
VA≒(C1・Vw_1+C2・Vr_1)/(C1+C2)
読み出しが選択状態、データ”0”
VA≒(C1・Vw_0+C2・Vr_1)/(C1+C2)
読み出しが非選択状態、データ”1”
VA≒(C1・Vw_1+C2・Vr_0)/(C1+C2)
読み出しが非選択状態、データ”0”
VA≒(C1・Vw_0+C2・Vr_0)/(C1+C2)
(C1・Vw_1+C2・Vr_1)/(C1+C2)>Vth
(C1・Vw_0+C2・Vr_1)/(C1+C2)<Vth
(C1・Vw_1+C2・Vr_0)/(C1+C2)>Vth
(C1・Vw_0+C2・Vr_0)/(C1+C2)>Vth
本発明の一態様に係る半導体装置が有する読み出し回路212の一例について図18を用いて説明する。
本実施の形態では、先の実施の形態において示したメモリセルとは異なるメモリセルの回路構成およびその動作について説明する。
本実施の形態に係るメモリセルの回路図の一例を図19に示す。図19に示すメモリセル220は、第1信号線S1と、ワード線WLと、トランジスタ221(第1のトランジスタ)と、トランジスタ222(第2のトランジスタ)と、容量素子223とから構成されている。トランジスタ221は、酸化物半導体以外の材料を用いて形成されており、トランジスタ222は酸化物半導体を用いて形成されている。ここで、トランジスタ221は、実施の形態1に示すトランジスタ160と同様の構成とするのが好ましい。また、トランジスタ222は、実施の形態1に示すトランジスタ162と同様の構成とするのが好ましい。また、メモリセル220は、ソース線SL及びビット線BLと電気的に接続されており、トランジスタ(他のメモリセルを構成するものも含む)を介して、ソース線SL及びビット線BLと電気的に接続されていてもよい。
次に、メモリセルの動作について具体的に説明する。
本実施の形態では、先の実施の形態で得られる半導体装置を搭載した電子機器の例について図20を用いて説明する。先の実施の形態で得られる半導体装置は、電力の供給がない場合でも、情報を保持することが可能である。また、書き込み、消去に伴う劣化が生じない。さらに、その動作も高速である。このため、当該半導体装置を用いて新たな構成の電子機器を提供することが可能である。なお、先の実施の形態に係る半導体装置は、集積化されて回路基板などに実装され、各電子機器の内部に搭載されることになる。
102 保護層
104 半導体領域
106 素子分離絶縁層
108 ゲート絶縁層
110 ゲート電極
112 絶縁層
114 不純物領域
116 チャネル形成領域
118 サイドウォール絶縁層
120 高濃度不純物領域
122 金属層
124 金属化合物領域
126 層間絶縁層
128 層間絶縁層
130a ソース電極またはドレイン電極
130b ソース電極またはドレイン電極
130c 電極
132 絶縁層
134 導電層
136a 電極
136b 電極
136c 電極
136d ゲート電極
138 ゲート絶縁層
140 酸化物半導体層
142a ソース電極またはドレイン電極
142b ソース電極またはドレイン電極
144 保護絶縁層
146 層間絶縁層
148 導電層
150a 電極
150b 電極
150c 電極
150d 電極
150e 電極
152 絶縁層
154a 電極
154b 電極
154c 電極
154d 電極
160 トランジスタ
162 トランジスタ
200 メモリセル
201 トランジスタ
202 トランジスタ
203 容量素子
204 トランジスタ
205 センスアンプ
210 メモリセルアレイ
211 ビット線及び第1信号線の駆動回路
212 読み出し回路
213 ワード線の駆動回路
215 トランジスタ
220 メモリセル
221 トランジスタ
222 トランジスタ
223 容量素子
301 本体
302 筐体
303 表示部
304 キーボード
311 本体
312 スタイラス
313 表示部
314 操作ボタン
315 外部インターフェイス
320 電子書籍
321 筐体
323 筐体
325 表示部
327 表示部
331 電源
333 操作キー
335 スピーカー
337 軸部
340 筐体
341 筐体
342 表示パネル
343 スピーカー
344 マイクロフォン
345 操作キー
346 ポインティングデバイス
347 カメラ用レンズ
348 外部接続端子
349 太陽電池セル
350 外部メモリスロット
361 本体
363 接眼部
364 操作スイッチ
365 表示部(B)
366 バッテリー
367 表示部(A)
370 テレビジョン装置
371 筐体
373 表示部
375 スタンド
377 表示部
379 操作キー
380 リモコン操作機
Claims (11)
- ソース線と、
ビット線と、
信号線と、
ワード線と、を有し、
前記ソース線と、前記ビット線との間には、複数のメモリセルが直列に接続され、
前記複数のメモリセルの一は、
第1のゲート電極、第1のソース電極、および第1のドレイン電極を有する第1のトランジスタと、
第2のゲート電極、第2のソース電極、および第2のドレイン電極を有する第2のトランジスタと、
容量素子と、を有し、
前記第1のトランジスタは、半導体材料を含む基板に設けられ、
前記第2のトランジスタは、酸化物半導体層を含んで構成され、
前記第1のゲート電極と、前記第2のソース電極または前記第2のドレイン電極の一方と、前記容量素子の電極の一方とは、電気的に接続され、
前記ソース線と、前記第1のソース電極とは、電気的に接続され、
前記ビット線と、前記第1のドレイン電極とは、電気的に接続され、
前記信号線と、前記第2のゲート電極とは、電気的に接続され、
前記ワード線と、前記第2のソース電極または前記第2のドレイン電極の他方と、前記容量素子の電極の他方とは、電気的に接続された半導体装置。 - ソース線と、
ビット線と、
信号線と、
ワード線と、を有し、
前記ソース線と、前記ビット線との間には、複数のメモリセルが直列に接続され、
前記複数のメモリセルの一は、
第1のゲート電極、第1のソース電極、および第1のドレイン電極を有する第1のトランジスタと、
第2のゲート電極、第2のソース電極、および第2のドレイン電極を有する第2のトランジスタと、
容量素子と、を有し、
前記第1のトランジスタは、半導体材料を含む基板に設けられ、
前記第2のトランジスタは、酸化物半導体層を含んで構成され、
前記第1のゲート電極と、前記第2のソース電極または前記第2のドレイン電極の一方と、前記容量素子の電極の一方とは、電気的に接続され、
前記ソース線と、前記第1のソース電極とは、電気的に接続され、
前記ビット線と、前記第1のドレイン電極とは、電気的に接続され、
前記信号線と、前記第2のソース電極または前記第2のドレイン電極の他方とは、電気的に接続され、
前記ワード線と、前記第2のゲート電極と、前記容量素子の電極の他方とは、電気的に接続された半導体装置。 - 前記半導体装置は、
第1の選択線と、
第2の選択線と、
前記第1の選択線と、ゲート電極において電気的に接続された第3のトランジスタと、
前記第2の選択線と、ゲート電極において電気的に接続された第4のトランジスタと、を有し、
前記ビット線は、前記第3のトランジスタを介して、前記第1のドレイン電極と、電気的に接続され、
前記ソース線は、前記第4のトランジスタを介して、前記第1のソース電極と、電気的に接続された請求項1または請求項2に記載の半導体装置。 - 前記第1のトランジスタは、
前記半導体材料を含む基板に設けられたチャネル形成領域と、前記チャネル形成領域を挟むように設けられた不純物領域と、前記チャネル形成領域上の第1のゲート絶縁層と、前記第1のゲート絶縁層上の前記第1のゲート電極と、前記不純物領域と電気的に接続する前記第1のソース電極および前記第1のドレイン電極と、を有する請求項1乃至請求項3のいずれか一に記載の半導体装置。 - 前記第2のトランジスタは、
前記半導体材料を含む基板上の前記第2のゲート電極と、前記第2のゲート電極上の第2のゲート絶縁層と、前記第2のゲート絶縁層上の前記酸化物半導体層と、前記酸化物半導体層と電気的に接続する前記第2のソース電極および前記第2のドレイン電極と、を有する請求項1乃至請求項4のいずれか一に記載の半導体装置。 - 前記半導体材料を含む基板は、単結晶半導体基板またはSOI基板である、請求項1乃至請求項5のいずれか一に記載の半導体装置。
- 前記半導体材料はシリコンである、請求項1乃至請求項6のいずれか一に記載の半導体装置。
- 前記酸化物半導体層は、In−Ga−Zn−O系の酸化物半導体材料を含んでいる、請求項1乃至請求項7のいずれか一に記載の半導体装置。
- 前記酸化物半導体層は、In2Ga2ZnO7の結晶を含んでいる、請求項1乃至請求項8のいずれか一に記載の半導体装置。
- 前記酸化物半導体層の水素濃度は5×1019atoms/cm3以下である、請求項1乃至請求項9のいずれか一に記載の半導体装置。
- 前記第2のトランジスタのオフ電流は1×10−13A以下である、請求項1乃至請求項10のいずれか一に記載の半導体装置。
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Publication number | Publication date |
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CN102598266B (zh) | 2015-04-22 |
JP5093934B1 (ja) | 2012-12-12 |
KR20120099464A (ko) | 2012-09-10 |
KR101752212B1 (ko) | 2017-06-29 |
WO2011062067A1 (en) | 2011-05-26 |
KR20130044370A (ko) | 2013-05-02 |
CN102598266A (zh) | 2012-07-18 |
US20110121286A1 (en) | 2011-05-26 |
TWI521679B (zh) | 2016-02-11 |
JP2017108148A (ja) | 2017-06-15 |
JP2015165587A (ja) | 2015-09-17 |
TW201138067A (en) | 2011-11-01 |
US8476626B2 (en) | 2013-07-02 |
JP5736152B2 (ja) | 2015-06-17 |
JP2012253365A (ja) | 2012-12-20 |
JP6381692B2 (ja) | 2018-08-29 |
KR101448908B1 (ko) | 2014-10-15 |
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