JP2011124293A5 - - Google Patents

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Publication number
JP2011124293A5
JP2011124293A5 JP2009279035A JP2009279035A JP2011124293A5 JP 2011124293 A5 JP2011124293 A5 JP 2011124293A5 JP 2009279035 A JP2009279035 A JP 2009279035A JP 2009279035 A JP2009279035 A JP 2009279035A JP 2011124293 A5 JP2011124293 A5 JP 2011124293A5
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JP
Japan
Prior art keywords
faraday shield
plasma processing
processing apparatus
slit
frequency power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009279035A
Other languages
English (en)
Japanese (ja)
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JP2011124293A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009279035A priority Critical patent/JP2011124293A/ja
Priority claimed from JP2009279035A external-priority patent/JP2011124293A/ja
Priority to KR1020100013164A priority patent/KR101142411B1/ko
Priority to US12/712,795 priority patent/US20110132540A1/en
Publication of JP2011124293A publication Critical patent/JP2011124293A/ja
Publication of JP2011124293A5 publication Critical patent/JP2011124293A5/ja
Pending legal-status Critical Current

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JP2009279035A 2009-12-09 2009-12-09 プラズマ処理装置 Pending JP2011124293A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009279035A JP2011124293A (ja) 2009-12-09 2009-12-09 プラズマ処理装置
KR1020100013164A KR101142411B1 (ko) 2009-12-09 2010-02-12 플라즈마처리장치
US12/712,795 US20110132540A1 (en) 2009-12-09 2010-02-25 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009279035A JP2011124293A (ja) 2009-12-09 2009-12-09 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2011124293A JP2011124293A (ja) 2011-06-23
JP2011124293A5 true JP2011124293A5 (enExample) 2013-07-25

Family

ID=44080850

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009279035A Pending JP2011124293A (ja) 2009-12-09 2009-12-09 プラズマ処理装置

Country Status (3)

Country Link
US (1) US20110132540A1 (enExample)
JP (1) JP2011124293A (enExample)
KR (1) KR101142411B1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5711953B2 (ja) * 2010-12-13 2015-05-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5856791B2 (ja) * 2011-10-05 2016-02-10 株式会社日立ハイテクノロジーズ プラズマ処理装置
WO2013099372A1 (ja) * 2011-12-27 2013-07-04 キヤノンアネルバ株式会社 放電容器及びプラズマ処理装置
DE102012103425A1 (de) * 2012-04-19 2013-10-24 Roth & Rau Ag Mikrowellenplasmaerzeugungsvorrichtung und Verfahren zu deren Betrieb
JP6620078B2 (ja) * 2016-09-05 2019-12-11 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP7042143B2 (ja) * 2018-03-30 2022-03-25 株式会社ダイヘン プラズマ発生装置
JP7042142B2 (ja) * 2018-03-30 2022-03-25 株式会社ダイヘン プラズマ発生装置
JP7139181B2 (ja) * 2018-07-26 2022-09-20 ワイエイシイテクノロジーズ株式会社 プラズマ処理装置
US20200286712A1 (en) * 2019-03-05 2020-09-10 Advanced Energy Industries, Inc. Single-turn and laminated-wall inductively coupled plasma sources
KR102540773B1 (ko) * 2021-01-19 2023-06-12 피에스케이 주식회사 패러데이 실드 및 기판 처리 장치
CN114864367A (zh) * 2022-03-25 2022-08-05 上海谙邦半导体设备有限公司 一种具有屏蔽效果的介质管及等离子体反应腔

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US6063233A (en) * 1991-06-27 2000-05-16 Applied Materials, Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6024826A (en) * 1996-05-13 2000-02-15 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US5540800A (en) * 1994-06-23 1996-07-30 Applied Materials, Inc. Inductively coupled high density plasma reactor for plasma assisted materials processing
US5650032A (en) * 1995-06-06 1997-07-22 International Business Machines Corporation Apparatus for producing an inductive plasma for plasma processes
US6132551A (en) * 1997-09-20 2000-10-17 Applied Materials, Inc. Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil
US6149760A (en) * 1997-10-20 2000-11-21 Tokyo Electron Yamanashi Limited Plasma processing apparatus
US6280563B1 (en) * 1997-12-31 2001-08-28 Lam Research Corporation Plasma device including a powered non-magnetic metal member between a plasma AC excitation source and the plasma
US6388382B1 (en) * 1999-03-09 2002-05-14 Hitachi, Ltd. Plasma processing apparatus and method
JP4384301B2 (ja) * 1999-09-13 2009-12-16 株式会社日立製作所 プラズマ処理装置
US6447636B1 (en) * 2000-02-16 2002-09-10 Applied Materials, Inc. Plasma reactor with dynamic RF inductive and capacitive coupling control
US6685799B2 (en) * 2001-03-14 2004-02-03 Applied Materials Inc. Variable efficiency faraday shield
KR100452920B1 (ko) 2002-07-19 2004-10-14 한국디엔에스 주식회사 유도결합형 플라즈마 에칭 장치
CN100353484C (zh) 2002-07-31 2007-12-05 兰姆研究有限公司 用于调整带电的法拉第屏蔽上的电压的方法
KR20040077019A (ko) * 2003-02-27 2004-09-04 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마처리장치 및 처리방법
US20070170867A1 (en) * 2006-01-24 2007-07-26 Varian Semiconductor Equipment Associates, Inc. Plasma Immersion Ion Source With Low Effective Antenna Voltage
KR100783071B1 (ko) 2006-12-22 2007-12-07 세메스 주식회사 패러데이 실드 유닛 및 이를 갖는 기판 처리 장치
JP4659771B2 (ja) * 2007-02-13 2011-03-30 株式会社日立ハイテクノロジーズ プラズマ処理装置

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