JP2013084653A5 - - Google Patents

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Publication number
JP2013084653A5
JP2013084653A5 JP2011221688A JP2011221688A JP2013084653A5 JP 2013084653 A5 JP2013084653 A5 JP 2013084653A5 JP 2011221688 A JP2011221688 A JP 2011221688A JP 2011221688 A JP2011221688 A JP 2011221688A JP 2013084653 A5 JP2013084653 A5 JP 2013084653A5
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JP
Japan
Prior art keywords
etching apparatus
plasma etching
gas
sample
frequency power
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Application number
JP2011221688A
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English (en)
Japanese (ja)
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JP5819154B2 (ja
JP2013084653A (ja
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Priority to JP2011221688A priority Critical patent/JP5819154B2/ja
Priority claimed from JP2011221688A external-priority patent/JP5819154B2/ja
Priority to US13/592,129 priority patent/US20130087285A1/en
Publication of JP2013084653A publication Critical patent/JP2013084653A/ja
Publication of JP2013084653A5 publication Critical patent/JP2013084653A5/ja
Application granted granted Critical
Publication of JP5819154B2 publication Critical patent/JP5819154B2/ja
Priority to US15/370,486 priority patent/US9960014B2/en
Priority to US15/951,814 priority patent/US10418224B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2011221688A 2011-10-06 2011-10-06 プラズマエッチング装置 Active JP5819154B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011221688A JP5819154B2 (ja) 2011-10-06 2011-10-06 プラズマエッチング装置
US13/592,129 US20130087285A1 (en) 2011-10-06 2012-08-22 Plasma etching apparatus
US15/370,486 US9960014B2 (en) 2011-10-06 2016-12-06 Plasma etching method
US15/951,814 US10418224B2 (en) 2011-10-06 2018-04-12 Plasma etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011221688A JP5819154B2 (ja) 2011-10-06 2011-10-06 プラズマエッチング装置

Publications (3)

Publication Number Publication Date
JP2013084653A JP2013084653A (ja) 2013-05-09
JP2013084653A5 true JP2013084653A5 (enExample) 2014-11-20
JP5819154B2 JP5819154B2 (ja) 2015-11-18

Family

ID=48041303

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011221688A Active JP5819154B2 (ja) 2011-10-06 2011-10-06 プラズマエッチング装置

Country Status (2)

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US (3) US20130087285A1 (enExample)
JP (1) JP5819154B2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5819154B2 (ja) * 2011-10-06 2015-11-18 株式会社日立ハイテクノロジーズ プラズマエッチング装置
KR101452828B1 (ko) * 2012-08-28 2014-10-23 주식회사 유진테크 기판처리장치
JP6539113B2 (ja) * 2015-05-28 2019-07-03 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6595335B2 (ja) * 2015-12-28 2019-10-23 株式会社日立ハイテクノロジーズ プラズマ処理装置
AU2021297476A1 (en) 2020-06-25 2022-12-15 6K Inc. Microcomposite alloy structure
US11963287B2 (en) 2020-09-24 2024-04-16 6K Inc. Systems, devices, and methods for starting plasma
JP2023548325A (ja) 2020-10-30 2023-11-16 シックスケー インコーポレイテッド 球状化金属粉末の合成のためのシステムおよび方法
AU2022206483A1 (en) 2021-01-11 2023-08-31 6K Inc. Methods and systems for reclamation of li-ion cathode materials using microwave plasma processing
JP2022107873A (ja) * 2021-01-12 2022-07-25 東京エレクトロン株式会社 基板処理装置及びクリーニング方法
EP4313449A1 (en) 2021-03-31 2024-02-07 6K Inc. Systems and methods for additive manufacturing of metal nitride ceramics
WO2023229928A1 (en) 2022-05-23 2023-11-30 6K Inc. Microwave plasma apparatus and methods for processing materials using an interior liner
US20230402255A1 (en) * 2022-06-09 2023-12-14 Tokyo Electron Limited Equipment and Method for Improved Edge Uniformity of Plasma Processing of Wafers
US12040162B2 (en) * 2022-06-09 2024-07-16 6K Inc. Plasma apparatus and methods for processing feed material utilizing an upstream swirl module and composite gas flows
WO2024044498A1 (en) 2022-08-25 2024-02-29 6K Inc. Plasma apparatus and methods for processing feed material utilizing a powder ingress preventor (pip)
US12195338B2 (en) 2022-12-15 2025-01-14 6K Inc. Systems, methods, and device for pyrolysis of methane in a microwave plasma for hydrogen and structured carbon powder production

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2894658B2 (ja) * 1992-01-17 1999-05-24 株式会社東芝 ドライエッチング方法およびその装置
JP2870719B2 (ja) * 1993-01-29 1999-03-17 東京エレクトロン株式会社 処理装置
US5498313A (en) * 1993-08-20 1996-03-12 International Business Machines Corp. Symmetrical etching ring with gas control
US5744049A (en) * 1994-07-18 1998-04-28 Applied Materials, Inc. Plasma reactor with enhanced plasma uniformity by gas addition, and method of using same
JPH09115880A (ja) * 1995-10-16 1997-05-02 Hitachi Ltd ドライエッチング装置
JPH1064881A (ja) * 1996-08-20 1998-03-06 Hitachi Ltd プラズマエッチング装置及びプラズマエッチング方法
US6042687A (en) * 1997-06-30 2000-03-28 Lam Research Corporation Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing
US6263829B1 (en) * 1999-01-22 2001-07-24 Applied Materials, Inc. Process chamber having improved gas distributor and method of manufacture
JP2001185542A (ja) * 1999-12-27 2001-07-06 Hitachi Ltd プラズマ処理装置及びそれを用いたプラズマ処理方法
KR100406173B1 (ko) * 2000-06-13 2003-11-19 주식회사 하이닉스반도체 촉매 분사 수단을 구비한 히터 블록
JP4717295B2 (ja) * 2000-10-04 2011-07-06 株式会社半導体エネルギー研究所 ドライエッチング装置及びエッチング方法
US6676760B2 (en) * 2001-08-16 2004-01-13 Appiled Materials, Inc. Process chamber having multiple gas distributors and method
US20040025791A1 (en) * 2002-08-09 2004-02-12 Applied Materials, Inc. Etch chamber with dual frequency biasing sources and a single frequency plasma generating source
US6942816B2 (en) 2003-02-12 2005-09-13 Lam Research Corporation Methods of reducing photoresist distortion while etching in a plasma processing system
CN100463112C (zh) * 2003-05-30 2009-02-18 周星工程股份有限公司 一种用于半导体装置的设备
JP4566789B2 (ja) * 2005-03-07 2010-10-20 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
JP4590363B2 (ja) * 2005-03-16 2010-12-01 日本碍子株式会社 ガス供給部材及びそれを用いた処理装置
US8097120B2 (en) * 2006-02-21 2012-01-17 Lam Research Corporation Process tuning gas injection from the substrate edge
US20070245958A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Dual plasma source process using a variable frequency capacitively coupled source for controlling ion radial distribution
US20080073032A1 (en) * 2006-08-10 2008-03-27 Akira Koshiishi Stage for plasma processing apparatus, and plasma processing apparatus
JP5074741B2 (ja) * 2006-11-10 2012-11-14 株式会社日立ハイテクノロジーズ 真空処理装置
JP2010016124A (ja) * 2008-07-02 2010-01-21 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
WO2011100293A2 (en) * 2010-02-12 2011-08-18 Applied Materials, Inc. Process chamber gas flow improvements
JP5819154B2 (ja) * 2011-10-06 2015-11-18 株式会社日立ハイテクノロジーズ プラズマエッチング装置
JP6120527B2 (ja) * 2012-11-05 2017-04-26 東京エレクトロン株式会社 プラズマ処理方法

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