JP5819154B2 - プラズマエッチング装置 - Google Patents

プラズマエッチング装置 Download PDF

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Publication number
JP5819154B2
JP5819154B2 JP2011221688A JP2011221688A JP5819154B2 JP 5819154 B2 JP5819154 B2 JP 5819154B2 JP 2011221688 A JP2011221688 A JP 2011221688A JP 2011221688 A JP2011221688 A JP 2011221688A JP 5819154 B2 JP5819154 B2 JP 5819154B2
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JP
Japan
Prior art keywords
sample
etching apparatus
plasma etching
gas
frequency power
Prior art date
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Active
Application number
JP2011221688A
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English (en)
Japanese (ja)
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JP2013084653A (ja
JP2013084653A5 (enExample
Inventor
小藤　直行
直行 小藤
横川　賢悦
賢悦 横川
伸幸 根岸
伸幸 根岸
雅美 上林
雅美 上林
賢稔 三宅
賢稔 三宅
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2011221688A priority Critical patent/JP5819154B2/ja
Priority to US13/592,129 priority patent/US20130087285A1/en
Publication of JP2013084653A publication Critical patent/JP2013084653A/ja
Publication of JP2013084653A5 publication Critical patent/JP2013084653A5/ja
Application granted granted Critical
Publication of JP5819154B2 publication Critical patent/JP5819154B2/ja
Priority to US15/370,486 priority patent/US9960014B2/en
Priority to US15/951,814 priority patent/US10418224B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32302—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2011221688A 2011-10-06 2011-10-06 プラズマエッチング装置 Active JP5819154B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011221688A JP5819154B2 (ja) 2011-10-06 2011-10-06 プラズマエッチング装置
US13/592,129 US20130087285A1 (en) 2011-10-06 2012-08-22 Plasma etching apparatus
US15/370,486 US9960014B2 (en) 2011-10-06 2016-12-06 Plasma etching method
US15/951,814 US10418224B2 (en) 2011-10-06 2018-04-12 Plasma etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011221688A JP5819154B2 (ja) 2011-10-06 2011-10-06 プラズマエッチング装置

Publications (3)

Publication Number Publication Date
JP2013084653A JP2013084653A (ja) 2013-05-09
JP2013084653A5 JP2013084653A5 (enExample) 2014-11-20
JP5819154B2 true JP5819154B2 (ja) 2015-11-18

Family

ID=48041303

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011221688A Active JP5819154B2 (ja) 2011-10-06 2011-10-06 プラズマエッチング装置

Country Status (2)

Country Link
US (3) US20130087285A1 (enExample)
JP (1) JP5819154B2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5819154B2 (ja) * 2011-10-06 2015-11-18 株式会社日立ハイテクノロジーズ プラズマエッチング装置
KR101452828B1 (ko) * 2012-08-28 2014-10-23 주식회사 유진테크 기판처리장치
JP6539113B2 (ja) * 2015-05-28 2019-07-03 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6595335B2 (ja) * 2015-12-28 2019-10-23 株式会社日立ハイテクノロジーズ プラズマ処理装置
AU2021297476A1 (en) 2020-06-25 2022-12-15 6K Inc. Microcomposite alloy structure
US11963287B2 (en) 2020-09-24 2024-04-16 6K Inc. Systems, devices, and methods for starting plasma
JP2023548325A (ja) 2020-10-30 2023-11-16 シックスケー インコーポレイテッド 球状化金属粉末の合成のためのシステムおよび方法
AU2022206483A1 (en) 2021-01-11 2023-08-31 6K Inc. Methods and systems for reclamation of li-ion cathode materials using microwave plasma processing
JP2022107873A (ja) * 2021-01-12 2022-07-25 東京エレクトロン株式会社 基板処理装置及びクリーニング方法
EP4313449A1 (en) 2021-03-31 2024-02-07 6K Inc. Systems and methods for additive manufacturing of metal nitride ceramics
WO2023229928A1 (en) 2022-05-23 2023-11-30 6K Inc. Microwave plasma apparatus and methods for processing materials using an interior liner
US20230402255A1 (en) * 2022-06-09 2023-12-14 Tokyo Electron Limited Equipment and Method for Improved Edge Uniformity of Plasma Processing of Wafers
US12040162B2 (en) * 2022-06-09 2024-07-16 6K Inc. Plasma apparatus and methods for processing feed material utilizing an upstream swirl module and composite gas flows
WO2024044498A1 (en) 2022-08-25 2024-02-29 6K Inc. Plasma apparatus and methods for processing feed material utilizing a powder ingress preventor (pip)
US12195338B2 (en) 2022-12-15 2025-01-14 6K Inc. Systems, methods, and device for pyrolysis of methane in a microwave plasma for hydrogen and structured carbon powder production

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2894658B2 (ja) * 1992-01-17 1999-05-24 株式会社東芝 ドライエッチング方法およびその装置
JP2870719B2 (ja) * 1993-01-29 1999-03-17 東京エレクトロン株式会社 処理装置
US5498313A (en) * 1993-08-20 1996-03-12 International Business Machines Corp. Symmetrical etching ring with gas control
US5744049A (en) * 1994-07-18 1998-04-28 Applied Materials, Inc. Plasma reactor with enhanced plasma uniformity by gas addition, and method of using same
JPH09115880A (ja) * 1995-10-16 1997-05-02 Hitachi Ltd ドライエッチング装置
JPH1064881A (ja) * 1996-08-20 1998-03-06 Hitachi Ltd プラズマエッチング装置及びプラズマエッチング方法
US6042687A (en) * 1997-06-30 2000-03-28 Lam Research Corporation Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing
US6263829B1 (en) * 1999-01-22 2001-07-24 Applied Materials, Inc. Process chamber having improved gas distributor and method of manufacture
JP2001185542A (ja) * 1999-12-27 2001-07-06 Hitachi Ltd プラズマ処理装置及びそれを用いたプラズマ処理方法
KR100406173B1 (ko) * 2000-06-13 2003-11-19 주식회사 하이닉스반도체 촉매 분사 수단을 구비한 히터 블록
JP4717295B2 (ja) * 2000-10-04 2011-07-06 株式会社半導体エネルギー研究所 ドライエッチング装置及びエッチング方法
US6676760B2 (en) * 2001-08-16 2004-01-13 Appiled Materials, Inc. Process chamber having multiple gas distributors and method
US20040025791A1 (en) * 2002-08-09 2004-02-12 Applied Materials, Inc. Etch chamber with dual frequency biasing sources and a single frequency plasma generating source
US6942816B2 (en) 2003-02-12 2005-09-13 Lam Research Corporation Methods of reducing photoresist distortion while etching in a plasma processing system
CN100463112C (zh) * 2003-05-30 2009-02-18 周星工程股份有限公司 一种用于半导体装置的设备
JP4566789B2 (ja) * 2005-03-07 2010-10-20 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
JP4590363B2 (ja) * 2005-03-16 2010-12-01 日本碍子株式会社 ガス供給部材及びそれを用いた処理装置
US8097120B2 (en) * 2006-02-21 2012-01-17 Lam Research Corporation Process tuning gas injection from the substrate edge
US20070245958A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Dual plasma source process using a variable frequency capacitively coupled source for controlling ion radial distribution
US20080073032A1 (en) * 2006-08-10 2008-03-27 Akira Koshiishi Stage for plasma processing apparatus, and plasma processing apparatus
JP5074741B2 (ja) * 2006-11-10 2012-11-14 株式会社日立ハイテクノロジーズ 真空処理装置
JP2010016124A (ja) * 2008-07-02 2010-01-21 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
WO2011100293A2 (en) * 2010-02-12 2011-08-18 Applied Materials, Inc. Process chamber gas flow improvements
JP5819154B2 (ja) * 2011-10-06 2015-11-18 株式会社日立ハイテクノロジーズ プラズマエッチング装置
JP6120527B2 (ja) * 2012-11-05 2017-04-26 東京エレクトロン株式会社 プラズマ処理方法

Also Published As

Publication number Publication date
US20180233329A1 (en) 2018-08-16
JP2013084653A (ja) 2013-05-09
US10418224B2 (en) 2019-09-17
US20130087285A1 (en) 2013-04-11
US20170084430A1 (en) 2017-03-23
US9960014B2 (en) 2018-05-01

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