US20130087285A1 - Plasma etching apparatus - Google Patents

Plasma etching apparatus Download PDF

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Publication number
US20130087285A1
US20130087285A1 US13/592,129 US201213592129A US2013087285A1 US 20130087285 A1 US20130087285 A1 US 20130087285A1 US 201213592129 A US201213592129 A US 201213592129A US 2013087285 A1 US2013087285 A1 US 2013087285A1
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Prior art keywords
sample
gas
etching apparatus
plasma etching
power supply
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US13/592,129
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Inventor
Naoyuki Kofuji
Ken'etsu Yokogawa
Nobuyuki Negishi
Masami Kamibayashi
Masatoshi Miyake
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Assigned to HITACHI HIGH-TECHNOLOGIES CORPORATION reassignment HITACHI HIGH-TECHNOLOGIES CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: YOKOGAWA, KEN'ETSU, KAMIBAYASHI, MASAMI, KOFUJI, NAOYUKI, MIYAKE, MASATOSHI, NEGISHI, NOBUYUKI
Publication of US20130087285A1 publication Critical patent/US20130087285A1/en
Priority to US15/370,486 priority Critical patent/US9960014B2/en
Priority to US15/951,814 priority patent/US10418224B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32302—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils

Definitions

  • the present invention relates to a plasma etching apparatus for use in manufacturing a semiconductor device.
  • the plasma etching apparatus used in processing of a semiconductor device generates ions and radicals by dissociating a reactive gas by plasma within a decompression chamber, and irradiates a surface of a sample with the ions and the radicals to process the sample. It is general to create energy for generating the plasma by electromagnetic waves. From the viewpoint of a method for inputting the electromagnetic wave, the plasma etching apparatus is roughly classified into two systems. One of the systems is an electrode discharge system such as parallel plate plasma or a magnetron RIE in which an antenna electrode for generating the electromagnetic wave is disposed in the decompression chamber. The other system is an electrodeless discharge system such as microwave plasma (for example, Japanese Patent Application Laid-Open Publication No.
  • Hei-10-64881 or an inductively coupled plasma for example, Japanese Patent Application Laid-Open Publication No. 2006-517743
  • the antenna electrode is disposed outside of the decompression chamber, and the electromagnetic wave is introduced through a dielectric window that separates the decompression chamber from the external.
  • the electrodeless discharge system has been used in order to prevent a temporal change in discharge characteristics due to the corrosion of the antenna electrode, or the deterioration of the transistor characteristic due to heavy metal released from the corroded antenna electrode.
  • the electrodeless discharge system has such a feature that non-uniform plasma is generated on the decompression chamber side of the dielectric window. Accordingly, in order to uniformly etch a sample with a large diameter, there has been used a method in which the sample is sufficiently distanced from the dielectric window, and ions are uniformized by diffusion.
  • An object of the present invention is to provide a plasma etching apparatus of the electrodeless system which can uniformize the radical density to improve the uniformity of etching.
  • a plasma etching apparatus that has a first gas introduction mechanism for supplying a first gas into a decompression chamber, generates plasma by inputting electromagnetic waves from an external of the decompression chamber into the decompression chamber through a dielectric window, generates radicals from the first gas by the plasma, irradiates a sample placed on a stage with the radicals, and inputs an RF (radio-frequency) power from a first RF power supply connected to the stage to generate a bias voltage in the sample for etching, the plasma etching apparatus including:
  • a second RF power supply for inputting the stage the RF power that allows the radicals to be generated in the outer periphery of the sample, which is different in frequency from the first RF power supply.
  • a plasma etching apparatus that has a first gas introduction mechanism for supplying a first gas into a decompression chamber, generates plasma by inputting electromagnetic waves from an external of the decompression chamber into the decompression chamber through a dielectric window, generates radicals from the first gas by the plasma, irradiates a sample placed on a stage with the radicals, and inputs a RF power from a first RF power supply connected to the stage to generate a bias voltage in the sample for etching, the plasma etching apparatus including:
  • a second gas introduction mechanism for supplying a second gas aside from the first gas introduction mechanism
  • a second RF power supply for inputting the RF power that allows the radicals to be generated in the outer periphery of the sample to the electrode, which is different in frequency from the first RF power supply.
  • the plasma etching apparatus of the electrodeless system that enables even etching because a reduction in the radicals on the outer periphery of the sample can be compensated.
  • FIG. 1 is a diagram illustrating an overall rough configuration of an inductively-coupled plasma etching apparatus according to a first embodiment of the present invention
  • FIG. 2A is a top view illustrating a stage of the inductively-coupled plasma etching apparatus illustrated in FIG. 1 ;
  • FIG. 2B is a diagram illustrating a contour of a radical distribution in the vicinity of the stage of the inductively-coupled plasma etching apparatus illustrated in FIG. 1 (a case where gas introduction hole intervals are small);
  • FIG. 2C is a diagram illustrating a contour of a radical distribution in the vicinity of the stage of the inductively-coupled plasma etching apparatus illustrated in FIG. 1 (a case where the gas introduction hole intervals are large);
  • FIG. 2D is a graph illustrating a relationship between a radical concentration unevenness in a circumferential direction and a (pitches of gas introduction holes)/b (distance between sample and gas introduction holes) in the stage of the inductively-coupled plasma etching apparatus illustrated in FIG. 1 ;
  • FIG. 2E is a diagram illustrating another stage of the inductively-coupled plasma etching apparatus illustrated in FIG. 1 , in which an upper portion is a top view, and a lower portion is a cross-sectional view taken along a line X-X;
  • FIG. 3A is a graph illustrating an oxygen radical concentration distribution in the vicinity of a sample surface (a case where there is no additive gas in the vicinity of the sample and no RF voltage is applied in the vicinity of the sample);
  • FIG. 3B is a graph illustrating the radial distribution of a line pattern dimension after a silicon substrate has been etched in the oxygen radical concentration distribution illustrated in FIG. 3A ;
  • FIG. 4A is a graph illustrating an oxygen radical concentration distribution in the vicinity of the sample surface (a case where there is the additive gas in the vicinity of the sample and no RF voltage is applied in the vicinity of the sample);
  • FIG. 4B is a graph illustrating the radial distribution of the line pattern dimension after the silicon substrate has been etched in the oxygen radical concentration distribution illustrated in FIG. 4A ;
  • FIG. 5A is a graph illustrating an oxygen radical concentration distribution in the vicinity of the sample surface (a case where there is the additive gas in the vicinity of the sample and the RF voltage is applied in the vicinity of the sample);
  • FIG. 5B is a graph illustrating the radial distribution of the line pattern dimension after the silicon substrate has been etched in the oxygen radical concentration distribution illustrated in FIG. 5A ;
  • FIG. 5C is a graph illustrating an oxygen radical concentration distribution in the vicinity of the sample surface (a case where there is the additive gas in the vicinity of the dielectric window and the RF voltage is applied in the vicinity of the sample);
  • FIG. 5D is a graph illustrating the radial distribution of the line pattern dimension after the silicon substrate has been etched in the oxygen radical concentration distribution illustrated in FIG. 5C ;
  • FIG. 5E is a graph illustrating a relationship between the uniformity of the radical density in the vicinity of the sample surface, and b (distance between gas introduction holes and sample)/ ⁇ b+c (distance between gas introduction holes and dielectric window) ⁇ ;
  • FIG. 6 is a diagram illustrating an overall rough configuration of a magneto-microwave plasma etching apparatus according to a second embodiment of the present invention.
  • FIG. 7A is a graph illustrating a CxFy radical concentration distribution in the vicinity of the sample surface (a case where there is no additive gas in the vicinity of the sample and no RF voltage is applied in the vicinity of the sample);
  • FIG. 7B is a graph illustrating the radial distribution of a line pattern dimension after an Si3N4 film has been etched in the CxFy radical concentration distribution illustrated in FIG. 7A ;
  • FIG. 8A is a graph illustrating the CxFy radical concentration distribution in the vicinity of the sample surface (a case where there is the additive gas in the vicinity of the sample and no RF voltage is applied in the vicinity of the sample);
  • FIG. 8B is a graph illustrating the radial distribution of the line pattern dimension after the Si3N4 film has been etched in the CxFy radical concentration distribution illustrated in FIG. 8A ;
  • FIG. 9A is a graph illustrating the CxFy radical concentration distribution in the vicinity of the sample surface (a case where there is the additive gas in the vicinity of the sample and the RF voltage is applied in the vicinity of the sample);
  • FIG. 9B is a graph illustrating the radial distribution of the line pattern dimension after the Si3N4 film has been etched in the CxFy radical concentration distribution illustrated in FIG. 9A ;
  • FIG. 10 is a diagram illustrating an overall rough configuration of a microwave etching apparatus according to a third embodiment of the present invention.
  • FIG. 11 is a cross-sectional view illustrating a processed shape of an organic film in an outer periphery of the sample (a case where there is no additive gas in the vicinity of the sample and no RF voltage is applied in the vicinity of the sample);
  • FIG. 12 is a cross-sectional view illustrating the processed shape of the organic film in the outer periphery of the sample (a case where there is the additive gas in the vicinity of the sample and no RF voltage is applied in the vicinity of the sample);
  • FIG. 13 is a cross-sectional view illustrating the processed shape of the organic film in the outer periphery of the sample (a case where there is the additive gas in the vicinity of the sample and the RF voltage is applied in the vicinity of the sample).
  • the present inventors have studied reasons that the uniformity is not improved even if a gas that is liable to generate desired radicals is added from an outer periphery of the sample as an additive gas. As a result, the present inventors have found, for example, the following facts. Because oxygen radicals and carbon radicals are high in extinction probability in the inner wall of the decompression chamber, the radicals in the vicinity of the inner wall of the decompression chamber are extinguished while the radiations are diffused from the plasma generation area in the vicinity of the dielectric window to the sample, and the radical density in the outer peripheral part is reduced in the vicinity of the sample. Because the radical density is decreased, a pattern dimension after processing is thinned in the outer peripheral of the sample.
  • the gas that is liable to generate the radicals introduced from the periphery of the sample dissociates in the plasma generation area which is not in the periphery of the sample, but above the sample and in the vicinity of the dielectric window to generate the radicals. Therefore, the entire radical density within the decompression chamber is increased, but there is no effect of increasing the radical density only in the vicinity of the inner wall of the decompression chamber, and the radical density is not uniformized.
  • the present invention has been derived from the above knowledge.
  • FIG. 1 is a diagram illustrating an overall rough configuration of an inductively-coupled plasma etching apparatus which is one of electrodeless discharge systems.
  • the same reference numerals or symbols denote identical constituent elements.
  • an etching gas is supplied from a gas supply mechanism 16 to a decompression chamber 20 through a gas introduction mechanism 19 .
  • an exhaust velocity in the decompression chamber 20 is adjusted by a turbo-molecular pump 22 and an adjustable pressure control valve 23 so that a pressure of the etching gas within the decompression chamber 20 , which is monitored by a manometer 24 , can be set to a desired value.
  • a RF power of, for example, 13.56 MHz is supplied to an antenna coil 13 located outside of a dielectric window 26 made of alumina from a RF power supply 15 , a ring-shaped plasma generation area 17 is formed on the decompression chamber side of the dielectric window 26 under the antennal coil 13 . Ions and radicals are generated from the etching gas by the plasma generation area 17 , and the ions and the radicals are transported by diffusion so as to be irradiated on a sample 21 located on a stage 18 . Also, a RF power supply 29 of 400 kHz for bias supply is fitted to the stage 18 through a matching box 30 and a low-pass filter 31 .
  • a RF voltage is applied from the RF power supply 29 to the stage 18 to allow the sample 21 to generate a negative voltage so that positive ions within the decompression chamber 20 can be accelerated and irradiated.
  • a RF power supply 2 of 40 MHz for plasma generation is connected to the stage 18 through a matching box 32 and a high-pass filter 33 , and the RF power is input to the stage 18 from the RF power supply 2 so that a ring-shaped plasma generation area 1 can be formed in the outer periphery of the sample 21 .
  • the two RF power supplies 2 and 29 different in frequency are thus fitted to the stage 18 so that a negative voltage for accelerating positive ions and the plasma generation can be controlled, independently.
  • an insulating ring 35 made of dielectric material is placed on the outer periphery of the stage 18 .
  • 56 gas introduction holes 40 for supplying an additive gas are concentrically arranged in the insulating ring 35 at regular intervals, and the additive gas supplied from a gas supply mechanism 36 can be introduced to the outer periphery.
  • the sample in which an oxide mask having a line pattern 100 nm in thickness and 50 nm in width is formed on a silicon substrate of ⁇ 300 mm is etched. It is desirable that the gas introduction holes are positioned within 1/5 of a sample diameter from the outermost periphery of the sample.
  • etching gas a mixed gas of chlorine, hydrogen bromide, and oxygen is introduced from the gas introduction mechanism 19 , no additive gas is supplied from the gas introduction holes 40 , no RF voltage is applied from the RF power supply 2 for plasma generation, and the RF voltage is applied from the RF power supply 29 for bias to etch the silicon substrate.
  • An oxygen radical concentration distribution in the vicinity of the sample surface in this situation is illustrated in FIG. 3A . It is found from FIG. 3A that an oxygen radical concentration is high in the center of the sample 21 , and low in the outer periphery thereof. The radial distribution of the dimension of the pattern of the sample after processing in this situation is illustrated in FIG. 3B . It is found from FIG.
  • the pattern dimension is large in the center of the silicon substrate and small in the outer periphery of the sample as with the oxygen radical concentration distribution. Accordingly, it is found that this is because the density of the oxygen radical is low in the outer periphery of the sample 21 .
  • an oxygen gas of 10 sccm is added from the gas introduction holes 40 to execute etching.
  • the oxygen radical concentration distribution in the vicinity of the sample surface is illustrated in FIG. 4A .
  • the oxygen radical concentration is increased in whole, but there is no change in a status where the oxygen radical concentration is high in the center of the sample, and low in the outer periphery.
  • the radial distribution of the dimension of the pattern of the sample after processing in this situation is illustrated in FIG. 4B .
  • the pattern dimension is larger in whole, but there is no change in a status where the pattern dimension is large in the center of the sample 21 , and small in the outer periphery of the sample 21 .
  • the RF power of 100 W is input from the RF power supply 2 for plasma generation to execute etching.
  • the oxygen radical concentration distribution in the vicinity of the sample surface in this situation is illustrated in FIG. 5A . It is found from FIG. 5A that the oxygen radical concentration in the center of a wafer (sample) is decreased, and the oxygen radical concentration in the outer periphery is increased so that the oxygen radical concentration becomes uniform.
  • the radial distribution of the dimension of the pattern of the sample after processing in this situation is illustrated in FIG. 5B . The dimension of the pattern in the outer periphery of the sample is increased, and the pattern dimension becomes substantially uniform within the sample plane.
  • FIGS. 2B and 2C illustrate the radical distributions by contours when the number of gas introduction holes 40 is 56 and 10, respectively.
  • the radical density is higher in the vicinity of the holes, and lower with distance from the holes.
  • the concentric radical distribution can be realized within the wafer plane.
  • the radical distribution is not concentric even within the wafer plane, and portions higher in the concentration and portions lower in the concentration are found in the circumferential direction.
  • the radical concentration unevenness in the circumferential direction has a very close correlation with a rate a/b between a pitch a of the holes and a distance b between the holes and the wafer (outermost periphery).
  • the results of examining this relationship are illustrated in FIG. 2D . It is found from FIG. 2D that the radical concentration unevenness is reduced more as a/b is smaller, and the concentration unevenness is substantially eliminated when a/b is 1 or lower. That is, it is desirable that the pitch a of the gas introduction holes 40 is shorter than the distance b between the holes and the wafer. Also, if a structure in which the pitch a of the holes is shortened to the extreme, that is, a slit-like gas introduction mechanism is provided as illustrated in FIG. 2E , it is conceivable that the uniform gas supply can be conducted.
  • the gas introduction holes 40 are formed in the outermost periphery of the dielectric window 26 , and the results of examining the radical concentration distribution in the vicinity of the wafer as in FIG. 5A are illustrated in FIG. 5C .
  • the radical concentration is increased in whole, but the status in which the radical concentration is low remains as it is.
  • the radial distribution of the dimension of the pattern of the sample after processing is illustrated in FIG. 5D .
  • the pattern dimension becomes larger in whole, but there is no change in the status in which the pattern dimension is large in the center of the sample and small in the outer periphery of the sample.
  • the frequency of the RF power supply 2 for plasma generation is set to 40 MHz. However, if the RF power supply is 4 MHz or higher, the same effect is obtained even if the RF power supply 2 is set to any frequency. Also, in this embodiment, the frequency of the RF power supply 29 for bias application is set to 400 kHz. However, if the frequency is 100 kHz or higher and lower than the frequency of the RF power supply 2 for plasma generation, the same effect is obtained even if the RF power supply 29 is set to any frequency. Also, in this embodiment, the gas introduction holes 40 for additive gas are formed in the insulating ring 35 placed on the outer periphery of the stage 18 .
  • the same effect is obtained if the gas introduction holes 40 are formed in the outer periphery of the sample 21 and at a position closer to the sample 21 than the dielectric window 26 . If the pitch of the gas introduction holes 40 is shorter than the distance between the gas introduction holes 40 and the sample 21 , the same effect is obtained.
  • the plasma etching apparatus of the inductively-coupled plasma system is used. However, the same effect is obtained if the plasma etching apparatus is of the electrodeless discharge system. In this embodiment, oxygen is used as the additive gas. However, the same effect is obtained even by other additive gases if the etching gas or the sample structure is different.
  • the plasma etching apparatus of the electrodeless system which generates the radicals in the outer periphery of the sample to uniformize the radical density so as to improve the uniformity of etching. Also, because both of the RF voltage for bias application and the RF voltage for plasma generation are applied to the stage, the structure is simple, and an increase in the costs can be suppressed.
  • FIG. 6 is a diagram illustrating an overall rough configuration of a magneto-microwave plasma etching apparatus according to this embodiment.
  • an etching gas goes through a gas reservoir 10 formed within the dielectric window 26 made of quartz from the gas supply mechanism 16 , and is then introduced into the decompression chamber 20 from a plurality of holes 11 (shower plate structure) formed on the decompression chamber of the dielectric window 26 .
  • the exhaust velocity in the decompression chamber 20 is adjusted by the turbo-molecular pump 22 and the adjustable pressure control valve 23 so that a pressure of the etching gas within the decompression chamber 20 can be set to a desired value.
  • microwaves generated by magnetrons 53 are supplied into the decompression chamber 20 through a waveguide 54 , a cavity resonance part 55 , and the dielectric window 26 .
  • the plasma generation area 17 can be formed in an upper part of the decompression chamber 20 by mutual interaction of a lateral electric field produced by the microwaves and a longitudinal magnetostatic field produced by the coils 56 .
  • Ions and radicals are generated from the etching gas by the plasma generation area 17 , and the ions and the radicals are transported by diffusion, and can be irradiated on the sample 21 placed on the stage 18 .
  • the RF power supply 29 of 400 kHz for bias supply is fitted to the stage 18 through the matching box 30 and the low-pass filter 31 .
  • a RF voltage is applied from the RF power supply 29 to the stage 18 to allow the sample 21 to generate a negative voltage so that positive ions within the decompression chamber 20 can be accelerated and irradiated.
  • the RF power supply 2 of 27 MHz for plasma generation is connected to the stage 18 through the matching box 32 and the high-pass filter 33 , and the RF power is input to the stage 18 from the RF power supply 2 so that a ring-shaped plasma generation area 1 can be formed in the outer periphery of the sample 21 .
  • plasma can be efficiently generated in only the outer periphery of the sample 21 , by mutual interaction of a lateral electric field produced in the outer periphery of the sample 21 by the electric power supplied from the RF power supply 2 for the plasma generation, and a longitudinal magnetostatic field produced by coils 56 .
  • the two RF power supplies 2 and 29 different in frequency are thus fitted to the stage 18 so that a negative voltage for accelerating positive ions and the plasma generation can be controlled, independently.
  • the insulating ring 35 made of dielectric material is placed on the outer periphery of the stage 18 .
  • the gas introduction holes 40 for supplying an additive gas are concentrically arranged in the insulating ring 35 , and the additive gas supplied from the gas supply mechanism 36 can be introduced to the outer periphery of the sample 21 .
  • etching gas a mixed gas of CHF3 and Ar is introduced from the gas supply mechanism 16 , no additive gas is supplied from the gas introduction holes 40 , no RF voltage is applied from the RF power supply 2 for plasma generation, and the RF voltage is applied only from the RF power supply 29 of 400 kHz for bias to etch the silicon substrate.
  • FIG. 7A A CxFy radical concentration distribution in the vicinity of the sample surface in this situation is illustrated in FIG. 7A . It is found from FIG. 7A that the oxygen radical concentration is high in the center of the sample 21 , and low in the outer periphery thereof. The radial distribution of the dimension of the pattern of the sample 21 after processing in this situation is illustrated in FIG. 7B . It is found from FIG.
  • CH2F2 of 10 sccm is added from the gas introduction holes 40 for additive gas introduction to execute etching.
  • the radical concentration distribution in the vicinity of the sample surface is illustrated in FIG. 8A .
  • the CxFy radical concentration is increased in whole, but there is no change in a status where the radical concentration is high in the center of the sample 21 , and low in the outer periphery thereof.
  • the radial distribution of the dimension of the pattern of the sample after processing in this situation is illustrated in FIG. 8B .
  • the pattern dimension is larger in whole, but there is no change in a status where the pattern dimension is large in the center of the sample 21 , and small in the outer periphery of the sample 21 .
  • the RF power of 50 W is input from the RF power supply 2 for plasma generation to execute etching.
  • the dimension of the pattern in the outer periphery of the sample 21 is increased, and the pattern dimension becomes substantially uniform within the sample plane.
  • the RF power of 100 W is input from the RF power supply 2 for plasma generation to execute etching.
  • the CxFy radical concentration distribution in the vicinity of the sample surface in this situation is illustrated in FIG. 9A . It is found from FIG. 9A that the radical concentration in the center of a wafer (sample) is decreased, and the radical concentration in the outer periphery is increased so that the radical concentration becomes uniform.
  • the radial distribution of the dimension of the pattern of the sample after processing in this situation is illustrated in FIG. 9B . The dimension of the pattern in the outer periphery of the sample is increased, and the pattern dimension becomes substantially uniform within the sample plane.
  • the frequency of the RF power supply 2 for plasma generation is set to 27 MHz. However, if the RF power supply is 4 MHz or higher, the same effect is obtained even if the RF power supply 2 is set to any frequency. Also, in this embodiment, the frequency of the RF power supply 29 for bias application is set to 400 kHz. However, if the frequency is 100 kHz or higher and lower than the frequency of the RF power supply 2 for plasma generation, the same effect is obtained even if the RF power supply 29 is set to any frequency. Also, in this embodiment, the gas introduction holes 40 for additive gas are formed in the insulating ring 35 placed on the outer periphery of the stage 18 .
  • the same effect is obtained if the gas introduction holes 40 are formed in the outer periphery of the sample 21 and at a position closer to the sample 21 than the dielectric window 26 .
  • the plasma etching apparatus of the magneto-microwave plasma system is used.
  • the same effect is obtained if the plasma etching apparatus is of the electrodeless discharge system.
  • CH2F2 is used as the additive gas.
  • the additive gas is fluorocarbon gas.
  • the same effect is obtained even by other additive gases if the etching gas or the sample structure is different.
  • the plasma etching apparatus of the electrodeless system which generates the radicals in the outer periphery of the sample to uniformize the radical density so as to improve the uniformity of etching. Also, because both of the RF voltage for bias application and the RF voltage for plasma generation are applied to the stage, the structure is simple, and an increase in the costs can be suppressed.
  • FIG. 10 is a diagram illustrating an overall rough configuration of a microwave plasma etching apparatus according to this embodiment.
  • an etching gas goes through the gas reservoir 10 formed within the dielectric window 26 made of quartz from the gas supply mechanism 16 , and is then introduced into the decompression chamber 20 from the plurality of holes 11 (shower plate structure) formed on the decompression chamber 20 of the dielectric window 26 .
  • the exhaust velocity in the decompression chamber 20 is adjusted by the turbo-molecular pump 22 and the adjustable pressure control valve 23 so that a pressure of the etching gas within the decompression chamber 20 can be set to a desired value.
  • microwaves generated by magnetrons 53 are supplied into the decompression chamber 20 through the waveguide 54 , the cavity resonance part 55 , and the dielectric window 26 .
  • the plasma generation area 17 can be formed in the vicinity of the dielectric window 26 by mutual interaction of a lateral electric field produced by the electric power of the input microwaves.
  • Ions and radicals are generated from the etching gas by the plasma generation area 17 , and the ions and the radicals are transported by diffusion, and can be irradiated on the sample 21 placed on the stage 18 .
  • the RF power supply 29 of 400 kHz for bias supply is fitted to the stage 18 through the matching box 30 and the low-pass filter 31 .
  • a RF voltage is applied from the RF power supply 29 to the stage 18 to allow the sample 21 to generate a negative voltage so that positive ions within the decompression chamber 20 can be accelerated and irradiated.
  • the insulating ring 35 made of dielectric material is placed on the outer periphery of the stage 18 .
  • the gas introduction holes 40 for supplying an additive gas are concentrically arranged in the insulating ring 35 as illustrated in FIG. 2A , and the additive gas supplied from the gas supply mechanism 36 can be introduced to the outer periphery of the sample 21 .
  • An electrode 41 insulated from the stage 18 is mounted on the insulating ring outside of the gas introduction holes 40 .
  • the RF power supply 2 of 27 MHz for plasma generation is connected to the stage 18 through the matching box 32 and the high-pass filter 33 , and the RF power is input to the electrode 41 from the RF power supply 2 so that the plasma generation area 1 can be formed in the outer periphery of the sample 21 .
  • the two RF power supplies 2 and 29 different in frequency are thus fitted to the stage 18 and the insulated electrode 41 so that the negative voltage for accelerating the positive ions and the plasma generation can be controlled, independently.
  • etching gas a mixed gas of O2 and Ar is used, no additive gas is supplied, no RF voltage of 27 MHz for plasma generation is applied, and the RF voltage of 400 kHz for bias is applied to execute etching.
  • FIG. 11 The processing shape of the organic film in the outer periphery of the sample 21 after processing is illustrated in FIG. 11 . It is found from FIG. 11 that a pattern 60 of the organic film is inclined toward the center of the sample 21 . It is known that the pattern 60 of the organic film is liable to be inclined when the oxygen radical density distribution becomes non-uniform. As a result of study, it is confirmed that the oxygen radical density in the outer periphery of the sample 21 is lower than that in the center of the sample 21 , and the oxygen radical density distribution becomes non-uniform.
  • oxygen of 10 sccm is added from the gas introduction holes 40 for additive gas introduction to execute etching.
  • the processing shape of the organic film in the outer periphery of the sample 21 after processing is illustrated in FIG. 12 . It is found from FIG. 12 that the pattern 60 of the organic film is inclined toward the center of the sample 21 . As a result of study, it is found that, in this method, the oxygen radical density in the outer periphery of the sample 21 is not sufficiently increased.
  • the RF power of 100 W is input from the RF power supply 2 for plasma generation to execute etching.
  • the shape after processing in this situation is illustrated in FIG. 13 . In this case, no inclination toward the center of the sample is found. Also, the dimension of the pattern in the outer periphery of the sample is increased, and the pattern dimension becomes substantially uniform within the sample plane.
  • the cross-sectional shape after processing is identical with that even in the etching of the silicon substrate in the first embodiment and the etching of the Si3N4 film in the second embodiment.
  • the frequency of the RF power supply 2 for plasma generation is set to 27 MHz. However, if the RF power supply is 4 MHz or higher, the same effect is obtained even if the RF power supply 2 is set to any frequency. Also, in this embodiment, the frequency of the RF power supply 29 for bias application is set to 400 kHz. However, if the frequency is 100 kHz or higher and lower than the frequency of the RF power supply 2 for plasma generation, the same effect is obtained even if the RF power supply 29 is set to any frequency. Also, in this embodiment, the gas introduction holes 40 for additive gas are formed in the insulating ring 35 placed on the outer periphery of the stage 18 .
  • the same effect is obtained if the gas introduction holes 40 are formed in the outer periphery of the sample 21 and at a position closer to the sample 21 than the dielectric window 26 .
  • the plasma etching apparatus of the microwave plasma system is used.
  • the same effect is obtained if the plasma etching apparatus is of the electrodeless discharge system.
  • oxygen is used as the additive gas.
  • the same effect is obtained even by other additive gases if the etching gas or the sample structure is different.
  • the plasma etching apparatus of the electrodeless system which generates the radicals in the outer periphery of the sample to uniformize the radical density so as to improve the uniformity of etching.
  • the plasma generation area formation electrode in the periphery of the sample is insulated from the stage, so that the negative voltage for accelerating the positive ions and the plasma generation can be controlled, independently.
  • the present invention is not limited to the above-mentioned embodiments, but includes a variety of modified examples.
  • the above-mentioned embodiments are described in detail for facilitating the understanding of the present invention, and the present invention is not always limited to the inclusion of all the above-described configurations.
  • a part of a configuration in one embodiment can be replaced with a configuration in another embodiment, and the configuration of one embodiment can be added with the configuration of another embodiment.
  • a part of the configurations in the respective embodiments can be subjected to addition, deletion, or replacement of another configuration.

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  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
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US20230402255A1 (en) * 2022-06-09 2023-12-14 Tokyo Electron Limited Equipment and Method for Improved Edge Uniformity of Plasma Processing of Wafers
US20230411123A1 (en) * 2022-06-09 2023-12-21 6K Inc. Plasma apparatus and methods for processing feed material utilizing an upstream swirl module and composite gas flows
US11919071B2 (en) 2020-10-30 2024-03-05 6K Inc. Systems and methods for synthesis of spheroidized metal powders
US11963287B2 (en) 2020-09-24 2024-04-16 6K Inc. Systems, devices, and methods for starting plasma
US12042861B2 (en) 2021-03-31 2024-07-23 6K Inc. Systems and methods for additive manufacturing of metal nitride ceramics
US12094688B2 (en) 2022-08-25 2024-09-17 6K Inc. Plasma apparatus and methods for processing feed material utilizing a powder ingress preventor (PIP)
US12176529B2 (en) 2020-06-25 2024-12-24 6K Inc. Microcomposite alloy structure
US12195338B2 (en) 2022-12-15 2025-01-14 6K Inc. Systems, methods, and device for pyrolysis of methane in a microwave plasma for hydrogen and structured carbon powder production
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JP5819154B2 (ja) 2015-11-18
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US20170084430A1 (en) 2017-03-23
US9960014B2 (en) 2018-05-01

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