JP5327657B2 - プラズマ発生装置 - Google Patents
プラズマ発生装置 Download PDFInfo
- Publication number
- JP5327657B2 JP5327657B2 JP2011155365A JP2011155365A JP5327657B2 JP 5327657 B2 JP5327657 B2 JP 5327657B2 JP 2011155365 A JP2011155365 A JP 2011155365A JP 2011155365 A JP2011155365 A JP 2011155365A JP 5327657 B2 JP5327657 B2 JP 5327657B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- antenna
- electrode
- generation container
- frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000012212 insulator Substances 0.000 claims description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 238000002294 plasma sputter deposition Methods 0.000 claims description 7
- 239000011810 insulating material Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 239000007772 electrode material Substances 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 16
- 238000010884 ion-beam technique Methods 0.000 description 14
- 238000005468 ion implantation Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 5
- 238000011109 contamination Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002923 metal particle Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000004323 axial length Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Electron Sources, Ion Sources (AREA)
Description
12 プラズマ生成容器
16 プラズマ電極
18 電子放出孔
20 プラズマ
24 ガス
26 アンテナ
28 高周波
30 PFG電源
42 アンテナカバー
60 枠カバー
62 突起部
70 リフレクター
71 凹形状の窪み
Claims (3)
- プラズマ生成容器内で高周波放電によってガスを電離させてプラズマを生成して、電子放出孔を通して当該プラズマより電子を外部に放出する装置であって、プラズマ生成容器内に設けられていて高周波を放射するアンテナと前記アンテナ全体を覆うものであって絶縁物から成るアンテナカバーとを備えており、前記電子放出孔のあるプラズマ電極材質が導電性材料であるプラズマ発生装置において、前記プラズマ電極と前記アンテナとの間にあり、筒状の枠体領域に枠体の内側または内側と外側に電子の流れを遮る方向の長さにおいて、枠体の厚みと異なる突起部がある枠カバーをもっており、前記枠カバーの突起部が電子放出孔がある前記プラズマ電極の周辺に影をつくり、プラズマスパッタによるアルミナ等の絶縁物が堆積しにくくしていることを特徴とするプラズマ発生装置。
- 前記枠カバーの材質はカーボン製である請求項1記載のプラズマ発生装置。
- プラズマ生成容器内で高周波放電によってガスを電離させてプラズマを生成して、電子放出孔を通して当該プラズマより電子を外部に放出する装置であって、プラズマ生成容器内に設けられていて高周波を放射するアンテナと前記アンテナ全体を覆うものであって絶縁物から成るアンテナカバーとを備えており、前記電子放出孔のあるプラズマ電極材質が導電性材料であるプラズマ発生装置において、前記プラズマ電極は、第1のプラズマ電極と第2のプラズマ電極の2枚で構成され、プラズマ側の第1プラズマ電極が突起付き構造をしており、前記第1プラズマ電極の突起により前記第2のプラズマ電極上に影をつくり、プラズマスパッタによるアルミナ等の絶縁物が堆積しにくくしていることを特徴とするプラズマ発生装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011155365A JP5327657B2 (ja) | 2010-08-24 | 2011-07-14 | プラズマ発生装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010186824 | 2010-08-24 | ||
JP2010186824 | 2010-08-24 | ||
JP2011155365A JP5327657B2 (ja) | 2010-08-24 | 2011-07-14 | プラズマ発生装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012069509A JP2012069509A (ja) | 2012-04-05 |
JP5327657B2 true JP5327657B2 (ja) | 2013-10-30 |
Family
ID=45696231
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011155365A Expired - Fee Related JP5327657B2 (ja) | 2010-08-24 | 2011-07-14 | プラズマ発生装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8569955B2 (ja) |
JP (1) | JP5327657B2 (ja) |
KR (1) | KR101307111B1 (ja) |
TW (1) | TWI449079B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101488659B1 (ko) * | 2012-03-06 | 2015-02-02 | 코닝정밀소재 주식회사 | 고주파 가열 장치 |
KR101290570B1 (ko) * | 2012-03-06 | 2013-07-31 | 삼성코닝정밀소재 주식회사 | 고주파 가열 장치 |
US9053907B2 (en) * | 2012-04-04 | 2015-06-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method of ion neutralization with multiple-zoned plasma flood gun |
JP6076838B2 (ja) * | 2013-05-31 | 2017-02-08 | 住友重機械イオンテクノロジー株式会社 | 絶縁構造及び絶縁方法 |
US9852887B2 (en) | 2013-08-23 | 2017-12-26 | Advanced Ion Beam Technology, Inc. | Ion source of an ion implanter |
CN110234195A (zh) * | 2019-07-18 | 2019-09-13 | 中国科学技术大学 | 谐振腔式ecr等离子体源装置以及方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04351838A (ja) * | 1991-05-28 | 1992-12-07 | Hitachi Ltd | イオンビーム装置の中性化器 |
JPH0547338A (ja) * | 1991-08-16 | 1993-02-26 | Nissin Electric Co Ltd | イオンビーム中性化装置 |
JPH09245997A (ja) * | 1996-03-05 | 1997-09-19 | Nissin Electric Co Ltd | カバーで覆われた内壁とアンテナを持つプラズマ室 |
JP3608416B2 (ja) * | 1999-02-02 | 2005-01-12 | 日新電機株式会社 | プラズマ源 |
JP4366856B2 (ja) * | 2000-10-23 | 2009-11-18 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR100464902B1 (ko) * | 2001-02-12 | 2005-01-05 | (주)에스이 플라즈마 | 대기압에서 저온 플라즈마를 발생시키는 장치 |
US6545419B2 (en) * | 2001-03-07 | 2003-04-08 | Advanced Technology Materials, Inc. | Double chamber ion implantation system |
JP3758520B2 (ja) * | 2001-04-26 | 2006-03-22 | 日新イオン機器株式会社 | イオンビーム照射装置および関連の方法 |
US6452198B1 (en) | 2001-06-28 | 2002-09-17 | Advanced Micro Devices, Inc. | Minimized contamination of semiconductor wafers within an implantation system |
US6852990B1 (en) | 2001-06-29 | 2005-02-08 | Advanced Micro Devices, Inc. | Electrostatic discharge depolarization using high density plasma |
JP4974318B2 (ja) * | 2001-08-17 | 2012-07-11 | 株式会社アルバック | マイクロ波プラズマ処理装置および処理方法 |
DE60329344D1 (de) * | 2002-03-08 | 2009-11-05 | Canon Anelva Corp | Verfahren und Vorrichtung zum Herstellen von Metall-Schichten |
JP4374487B2 (ja) * | 2003-06-06 | 2009-12-02 | 株式会社Sen | イオン源装置およびそのクリーニング最適化方法 |
JP4550507B2 (ja) * | 2004-07-26 | 2010-09-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
US20070137576A1 (en) * | 2005-12-19 | 2007-06-21 | Varian Semiconductor Equipment Associates, Inc. | Technique for providing an inductively coupled radio frequency plasma flood gun |
US7342240B2 (en) | 2006-02-24 | 2008-03-11 | Varian Semiconductor Equipment Associates, Inc. | Ion beam current monitoring |
JP4001185B1 (ja) * | 2007-03-06 | 2007-10-31 | 日新イオン機器株式会社 | プラズマ発生装置 |
JP2008251857A (ja) * | 2007-03-30 | 2008-10-16 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP5060869B2 (ja) | 2007-08-21 | 2012-10-31 | 株式会社アルバック | プラズマ処理装置 |
JP5317509B2 (ja) * | 2008-03-27 | 2013-10-16 | 東京エレクトロン株式会社 | プラズマ処理装置および方法 |
US20100159120A1 (en) * | 2008-12-22 | 2010-06-24 | Varian Semiconductor Equipment Associates, Inc. | Plasma ion process uniformity monitor |
JP5188385B2 (ja) * | 2008-12-26 | 2013-04-24 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理装置の運転方法 |
-
2011
- 2011-06-30 KR KR1020110064532A patent/KR101307111B1/ko active IP Right Grant
- 2011-07-14 JP JP2011155365A patent/JP5327657B2/ja not_active Expired - Fee Related
- 2011-07-19 TW TW100125387A patent/TWI449079B/zh not_active IP Right Cessation
- 2011-08-04 US US13/198,429 patent/US8569955B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20120022547A (ko) | 2012-03-12 |
US20120049738A1 (en) | 2012-03-01 |
KR101307111B1 (ko) | 2013-09-11 |
JP2012069509A (ja) | 2012-04-05 |
TWI449079B (zh) | 2014-08-11 |
US8569955B2 (en) | 2013-10-29 |
TW201209878A (en) | 2012-03-01 |
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