JP2011530143A5 - - Google Patents
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- Publication number
- JP2011530143A5 JP2011530143A5 JP2011521185A JP2011521185A JP2011530143A5 JP 2011530143 A5 JP2011530143 A5 JP 2011530143A5 JP 2011521185 A JP2011521185 A JP 2011521185A JP 2011521185 A JP2011521185 A JP 2011521185A JP 2011530143 A5 JP2011530143 A5 JP 2011530143A5
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- lid
- coupled
- coils
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 25
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 2
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 230000006698 induction Effects 0.000 claims 1
- 238000009616 inductively coupled plasma Methods 0.000 claims 1
- 230000007246 mechanism Effects 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/182,342 | 2008-07-30 | ||
| US12/182,342 US8299391B2 (en) | 2008-07-30 | 2008-07-30 | Field enhanced inductively coupled plasma (Fe-ICP) reactor |
| PCT/US2009/050916 WO2010014433A2 (en) | 2008-07-30 | 2009-07-17 | Field enhanced inductively coupled plasma (fe-icp) reactor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011530143A JP2011530143A (ja) | 2011-12-15 |
| JP2011530143A5 true JP2011530143A5 (enExample) | 2013-06-27 |
| JP5740304B2 JP5740304B2 (ja) | 2015-06-24 |
Family
ID=41607280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011521185A Expired - Fee Related JP5740304B2 (ja) | 2008-07-30 | 2009-07-17 | フィールド強化型誘導結合プラズマ処理システムおよびプラズマ形成方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8299391B2 (enExample) |
| JP (1) | JP5740304B2 (enExample) |
| KR (1) | KR20110038150A (enExample) |
| CN (1) | CN102106192B (enExample) |
| TW (1) | TWI428061B (enExample) |
| WO (1) | WO2010014433A2 (enExample) |
Families Citing this family (37)
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| US20110094994A1 (en) | 2009-10-26 | 2011-04-28 | Applied Materials, Inc. | Inductively coupled plasma apparatus |
| US20110097901A1 (en) * | 2009-10-26 | 2011-04-28 | Applied Materials, Inc. | Dual mode inductively coupled plasma reactor with adjustable phase coil assembly |
| US8652297B2 (en) * | 2010-08-03 | 2014-02-18 | Applied Materials, Inc. | Symmetric VHF plasma power coupler with active uniformity steering |
| TR201907297T4 (tr) * | 2010-09-16 | 2019-06-21 | Koninklijke Philips Nv | Görüntülerin geliştirilmiş kodlanması için cihazlar ve yöntemler. |
| US10595365B2 (en) * | 2010-10-19 | 2020-03-17 | Applied Materials, Inc. | Chamber lid heater ring assembly |
| US8492980B2 (en) | 2010-10-28 | 2013-07-23 | Applied Materials, Inc. | Methods for calibrating RF power applied to a plurality of RF coils in a plasma processing system |
| KR101760548B1 (ko) | 2011-03-30 | 2017-07-21 | 제너럴 일렉트릭 캄파니 | 이미지 콘텐츠에 기초하여 휘도를 자동으로 검출하는 방법 및 장치 |
| KR101251930B1 (ko) * | 2011-06-03 | 2013-04-08 | (주)스마텍 | 필드 강화 유도 결합 플라즈마 처리 장치 및 플라즈마 형성 방법 |
| US20130017315A1 (en) * | 2011-07-15 | 2013-01-17 | Applied Materials, Inc. | Methods and apparatus for controlling power distribution in substrate processing systems |
| US8808561B2 (en) * | 2011-11-15 | 2014-08-19 | Lam Research Coporation | Inert-dominant pulsing in plasma processing systems |
| US9324589B2 (en) * | 2012-02-28 | 2016-04-26 | Lam Research Corporation | Multiplexed heater array using AC drive for semiconductor processing |
| US9082589B2 (en) * | 2012-10-09 | 2015-07-14 | Novellus Systems, Inc. | Hybrid impedance matching for inductively coupled plasma system |
| US20140102641A1 (en) * | 2012-10-11 | 2014-04-17 | Smatek Co., Ltd | Field enhanced inductively coupled plasma processing apparatus and plasma forming method |
| US20140367043A1 (en) * | 2013-06-17 | 2014-12-18 | Applied Materials, Inc. | Method for fast and repeatable plasma ignition and tuning in plasma chambers |
| WO2014204598A1 (en) * | 2013-06-17 | 2014-12-24 | Applied Materials, Inc. | Enhanced plasma source for a plasma reactor |
| CN104684235B (zh) * | 2013-11-28 | 2017-07-07 | 中微半导体设备(上海)有限公司 | 一种电感线圈组及电感耦合等离子体处理装置 |
| US10249479B2 (en) * | 2015-01-30 | 2019-04-02 | Applied Materials, Inc. | Magnet configurations for radial uniformity tuning of ICP plasmas |
| US10062585B2 (en) * | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
| US10395896B2 (en) | 2017-03-03 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation |
| US10283329B2 (en) * | 2017-07-10 | 2019-05-07 | Applied Materials, Inc. | ICP source for M and W-shape discharge profile control |
| KR102791775B1 (ko) | 2019-05-07 | 2025-04-03 | 램 리써치 코포레이션 | 폐루프 다중 출력 rf 매칭 |
| KR102041518B1 (ko) * | 2019-07-18 | 2019-11-06 | 에이피티씨 주식회사 | 분리형 플라즈마 소스 코일 및 이의 제어 방법 |
| KR102882813B1 (ko) | 2019-07-31 | 2025-11-06 | 램 리써치 코포레이션 | 복수의 출력 포트들을 갖는 무선 주파수 (radio frequency) 전력 생성기 |
| CN114762079B (zh) | 2019-12-02 | 2025-02-28 | 朗姆研究公司 | 射频辅助等离子体生成中的阻抗变换 |
| US12288672B2 (en) | 2020-01-15 | 2025-04-29 | Applied Materials, Inc. | Methods and apparatus for carbon compound film deposition |
| US11545346B2 (en) * | 2020-03-06 | 2023-01-03 | Applied Materials, Inc. | Capacitive sensing data integration for plasma chamber condition monitoring |
| US11994542B2 (en) | 2020-03-27 | 2024-05-28 | Lam Research Corporation | RF signal parameter measurement in an integrated circuit fabrication chamber |
| CN116075917A (zh) | 2020-06-12 | 2023-05-05 | 朗姆研究公司 | 通过rf耦合结构对等离子体形成的控制 |
| WO2022146648A1 (en) | 2020-12-28 | 2022-07-07 | Mattson Technology, Inc. | Induction coil assembly for plasma processing apparatus |
| TWI829156B (zh) | 2021-05-25 | 2024-01-11 | 大陸商北京屹唐半導體科技股份有限公司 | 電漿源陣列、電漿處理設備、電漿處理系統以及用於在電漿處理設備中加工工件的方法 |
| US11776788B2 (en) * | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
| CN115708395A (zh) * | 2021-08-18 | 2023-02-21 | 北京北方华创微电子装备有限公司 | 等离子体发生装置及半导体工艺设备 |
| KR20230056817A (ko) * | 2021-10-20 | 2023-04-28 | 세메스 주식회사 | 안테나 부재 및 기판 처리 장치 |
| US12463011B2 (en) | 2023-11-11 | 2025-11-04 | Applied Materials Inc. | Inductively coupled plasma source with radial coil network |
| KR20250089032A (ko) * | 2023-12-11 | 2025-06-18 | 한양대학교 산학협력단 | Rf 에너지를 이용한 가열 장치 |
| US20250323023A1 (en) * | 2024-04-16 | 2025-10-16 | Applied Materials Inc | Heated Lid Ring for Chamber Wall Temperature Control |
| US20250349509A1 (en) * | 2024-05-13 | 2025-11-13 | Applied Materials, Inc. | Methods and apparatus that use inductively coupled plasma resonator sources |
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| US5556501A (en) | 1989-10-03 | 1996-09-17 | Applied Materials, Inc. | Silicon scavenger in an inductively coupled RF plasma reactor |
| JP3086096B2 (ja) | 1992-12-22 | 2000-09-11 | 沖電気工業株式会社 | 有磁場プラズマ処理装置 |
| US5865896A (en) | 1993-08-27 | 1999-02-02 | Applied Materials, Inc. | High density plasma CVD reactor with combined inductive and capacitive coupling |
| US6308654B1 (en) * | 1996-10-18 | 2001-10-30 | Applied Materials, Inc. | Inductively coupled parallel-plate plasma reactor with a conical dome |
| US5824607A (en) | 1997-02-06 | 1998-10-20 | Applied Materials, Inc. | Plasma confinement for an inductively coupled plasma reactor |
| KR100372317B1 (ko) | 1997-03-17 | 2003-05-16 | 마쯔시다덴기산교 가부시키가이샤 | 플라즈마처리방법및장치 |
| JP3379394B2 (ja) * | 1997-07-28 | 2003-02-24 | 松下電器産業株式会社 | プラズマ処理方法及び装置 |
| US6280563B1 (en) * | 1997-12-31 | 2001-08-28 | Lam Research Corporation | Plasma device including a powered non-magnetic metal member between a plasma AC excitation source and the plasma |
| US6287435B1 (en) | 1998-05-06 | 2001-09-11 | Tokyo Electron Limited | Method and apparatus for ionized physical vapor deposition |
| JP4852189B2 (ja) * | 1999-03-09 | 2012-01-11 | 株式会社日立製作所 | プラズマ処理装置及びプラズマ処理方法 |
| US6447637B1 (en) | 1999-07-12 | 2002-09-10 | Applied Materials Inc. | Process chamber having a voltage distribution electrode |
| JP4323021B2 (ja) * | 1999-09-13 | 2009-09-02 | 株式会社エフオーアイ | プラズマ処理装置 |
| JP3769157B2 (ja) * | 1999-11-15 | 2006-04-19 | 松下電器産業株式会社 | ウェハのドライエッチング装置およびドライエッチング方法 |
| JP2004165674A (ja) * | 2000-01-26 | 2004-06-10 | Matsushita Electric Ind Co Ltd | ワークのプラズマ処理装置およびワークのプラズマ処理方法 |
| US6447636B1 (en) * | 2000-02-16 | 2002-09-10 | Applied Materials, Inc. | Plasma reactor with dynamic RF inductive and capacitive coupling control |
| US6900596B2 (en) * | 2002-07-09 | 2005-05-31 | Applied Materials, Inc. | Capacitively coupled plasma reactor with uniform radial distribution of plasma |
| KR20010044059A (ko) * | 2000-06-29 | 2001-06-05 | 박용석 | 유리기판 또는 웨이퍼 처리용 전자 사이클로트론 공명에슁장치 |
| AU2001281306A1 (en) * | 2000-07-13 | 2002-01-30 | Tokyo Electron Limited | Adjustable segmented electrode apparatus and method |
| US20020100557A1 (en) | 2001-01-29 | 2002-08-01 | Applied Materials, Inc. | ICP window heater integrated with faraday shield or floating electrode between the source power coil and the ICP window |
| JP2002359232A (ja) * | 2001-05-31 | 2002-12-13 | Tokyo Electron Ltd | プラズマ処理装置 |
| US20040194890A1 (en) | 2001-09-28 | 2004-10-07 | Tokyo Electron Limited | Hybrid plasma processing apparatus |
| US7223321B1 (en) | 2002-08-30 | 2007-05-29 | Lam Research Corporation | Faraday shield disposed within an inductively coupled plasma etching apparatus |
| US20040173314A1 (en) * | 2003-03-05 | 2004-09-09 | Ryoji Nishio | Plasma processing apparatus and method |
| JP2008513993A (ja) * | 2004-09-14 | 2008-05-01 | アダプティーブ プラズマ テクノロジー コープ | 適応型プラズマソース及びこれを用いた半導体ウェハー処理方法 |
| US8012306B2 (en) * | 2006-02-15 | 2011-09-06 | Lam Research Corporation | Plasma processing reactor with multiple capacitive and inductive power sources |
| US7517437B2 (en) * | 2006-03-29 | 2009-04-14 | Applied Materials, Inc. | RF powered target for increasing deposition uniformity in sputtering systems |
| JP4904202B2 (ja) * | 2006-05-22 | 2012-03-28 | ジーイーエヌ カンパニー リミッテッド | プラズマ反応器 |
| US7829815B2 (en) * | 2006-09-22 | 2010-11-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Adjustable electrodes and coils for plasma density distribution control |
-
2008
- 2008-07-30 US US12/182,342 patent/US8299391B2/en active Active
-
2009
- 2009-07-17 JP JP2011521185A patent/JP5740304B2/ja not_active Expired - Fee Related
- 2009-07-17 WO PCT/US2009/050916 patent/WO2010014433A2/en not_active Ceased
- 2009-07-17 KR KR1020117004491A patent/KR20110038150A/ko not_active Ceased
- 2009-07-17 CN CN200980129618.5A patent/CN102106192B/zh not_active Expired - Fee Related
- 2009-07-22 TW TW098124752A patent/TWI428061B/zh not_active IP Right Cessation
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