CN102106192B - 场加强感应耦合等离子体(fe-icp)反应器 - Google Patents

场加强感应耦合等离子体(fe-icp)反应器 Download PDF

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Publication number
CN102106192B
CN102106192B CN200980129618.5A CN200980129618A CN102106192B CN 102106192 B CN102106192 B CN 102106192B CN 200980129618 A CN200980129618 A CN 200980129618A CN 102106192 B CN102106192 B CN 102106192B
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China
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electrode
plasma
coil
coupled
electrodes
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Expired - Fee Related
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CN200980129618.5A
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English (en)
Chinese (zh)
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CN102106192A (zh
Inventor
瓦伦汀·N·图杜罗
萨姆尔·班纳
卡尔蒂克·拉马斯瓦米
迈克尔·D·威尔沃斯
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
CN200980129618.5A 2008-07-30 2009-07-17 场加强感应耦合等离子体(fe-icp)反应器 Expired - Fee Related CN102106192B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/182,342 US8299391B2 (en) 2008-07-30 2008-07-30 Field enhanced inductively coupled plasma (Fe-ICP) reactor
US12/182,342 2008-07-30
PCT/US2009/050916 WO2010014433A2 (en) 2008-07-30 2009-07-17 Field enhanced inductively coupled plasma (fe-icp) reactor

Publications (2)

Publication Number Publication Date
CN102106192A CN102106192A (zh) 2011-06-22
CN102106192B true CN102106192B (zh) 2014-11-26

Family

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Family Applications (1)

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CN200980129618.5A Expired - Fee Related CN102106192B (zh) 2008-07-30 2009-07-17 场加强感应耦合等离子体(fe-icp)反应器

Country Status (6)

Country Link
US (1) US8299391B2 (enExample)
JP (1) JP5740304B2 (enExample)
KR (1) KR20110038150A (enExample)
CN (1) CN102106192B (enExample)
TW (1) TWI428061B (enExample)
WO (1) WO2010014433A2 (enExample)

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WO2021022303A1 (en) 2019-07-31 2021-02-04 Lam Research Corporation Radio frequency power generator having multiple output ports
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US12288672B2 (en) 2020-01-15 2025-04-29 Applied Materials, Inc. Methods and apparatus for carbon compound film deposition
US11545346B2 (en) * 2020-03-06 2023-01-03 Applied Materials, Inc. Capacitive sensing data integration for plasma chamber condition monitoring
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Also Published As

Publication number Publication date
TW201036496A (en) 2010-10-01
KR20110038150A (ko) 2011-04-13
WO2010014433A3 (en) 2010-04-15
JP5740304B2 (ja) 2015-06-24
WO2010014433A2 (en) 2010-02-04
CN102106192A (zh) 2011-06-22
TWI428061B (zh) 2014-02-21
US20100025384A1 (en) 2010-02-04
JP2011530143A (ja) 2011-12-15
US8299391B2 (en) 2012-10-30

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