CN102106192B - 场加强感应耦合等离子体(fe-icp)反应器 - Google Patents

场加强感应耦合等离子体(fe-icp)反应器 Download PDF

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Publication number
CN102106192B
CN102106192B CN200980129618.5A CN200980129618A CN102106192B CN 102106192 B CN102106192 B CN 102106192B CN 200980129618 A CN200980129618 A CN 200980129618A CN 102106192 B CN102106192 B CN 102106192B
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China
Prior art keywords
electrode
plasma
coil
coupled
electrodes
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN200980129618.5A
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English (en)
Chinese (zh)
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CN102106192A (zh
Inventor
瓦伦汀·N·图杜罗
萨姆尔·班纳
卡尔蒂克·拉马斯瓦米
迈克尔·D·威尔沃斯
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Applied Materials Inc
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Applied Materials Inc
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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
CN200980129618.5A 2008-07-30 2009-07-17 场加强感应耦合等离子体(fe-icp)反应器 Expired - Fee Related CN102106192B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/182,342 US8299391B2 (en) 2008-07-30 2008-07-30 Field enhanced inductively coupled plasma (Fe-ICP) reactor
US12/182,342 2008-07-30
PCT/US2009/050916 WO2010014433A2 (en) 2008-07-30 2009-07-17 Field enhanced inductively coupled plasma (fe-icp) reactor

Publications (2)

Publication Number Publication Date
CN102106192A CN102106192A (zh) 2011-06-22
CN102106192B true CN102106192B (zh) 2014-11-26

Family

ID=41607280

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980129618.5A Expired - Fee Related CN102106192B (zh) 2008-07-30 2009-07-17 场加强感应耦合等离子体(fe-icp)反应器

Country Status (6)

Country Link
US (1) US8299391B2 (enExample)
JP (1) JP5740304B2 (enExample)
KR (1) KR20110038150A (enExample)
CN (1) CN102106192B (enExample)
TW (1) TWI428061B (enExample)
WO (1) WO2010014433A2 (enExample)

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US10249479B2 (en) * 2015-01-30 2019-04-02 Applied Materials, Inc. Magnet configurations for radial uniformity tuning of ICP plasmas
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US10283329B2 (en) * 2017-07-10 2019-05-07 Applied Materials, Inc. ICP source for M and W-shape discharge profile control
KR102791775B1 (ko) 2019-05-07 2025-04-03 램 리써치 코포레이션 폐루프 다중 출력 rf 매칭
KR102041518B1 (ko) * 2019-07-18 2019-11-06 에이피티씨 주식회사 분리형 플라즈마 소스 코일 및 이의 제어 방법
KR102882813B1 (ko) 2019-07-31 2025-11-06 램 리써치 코포레이션 복수의 출력 포트들을 갖는 무선 주파수 (radio frequency) 전력 생성기
KR20260010468A (ko) 2019-12-02 2026-01-20 램 리써치 코포레이션 Rf (radio-frequency) 보조된 플라즈마 생성시 임피던스 변환
US12288672B2 (en) 2020-01-15 2025-04-29 Applied Materials, Inc. Methods and apparatus for carbon compound film deposition
US11545346B2 (en) * 2020-03-06 2023-01-03 Applied Materials, Inc. Capacitive sensing data integration for plasma chamber condition monitoring
US11994542B2 (en) 2020-03-27 2024-05-28 Lam Research Corporation RF signal parameter measurement in an integrated circuit fabrication chamber
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KR102974220B1 (ko) * 2021-10-20 2026-06-09 세메스 주식회사 안테나 부재 및 기판 처리 장치
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Also Published As

Publication number Publication date
CN102106192A (zh) 2011-06-22
JP5740304B2 (ja) 2015-06-24
JP2011530143A (ja) 2011-12-15
US8299391B2 (en) 2012-10-30
KR20110038150A (ko) 2011-04-13
TW201036496A (en) 2010-10-01
US20100025384A1 (en) 2010-02-04
TWI428061B (zh) 2014-02-21
WO2010014433A2 (en) 2010-02-04
WO2010014433A3 (en) 2010-04-15

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