TWI428061B - 場加強感應耦合電漿（ｆｅ－ｉｃｐ）反應器 - Google Patents

場加強感應耦合電漿（ｆｅ－ｉｃｐ）反應器 Download PDF

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Publication number
TWI428061B
TWI428061B TW098124752A TW98124752A TWI428061B TW I428061 B TWI428061 B TW I428061B TW 098124752 A TW098124752 A TW 098124752A TW 98124752 A TW98124752 A TW 98124752A TW I428061 B TWI428061 B TW I428061B
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TW
Taiwan
Prior art keywords
electrodes
plasma
power
processing chamber
coupled
Prior art date
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TW098124752A
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English (en)
Chinese (zh)
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TW201036496A (en
Inventor
托多羅法倫帝Ｎ
巴那沙莫
拉馬斯瓦米卡帝克
威沃斯麥克Ｄ
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應用材料股份有限公司
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Publication of TW201036496A publication Critical patent/TW201036496A/zh
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
TW098124752A 2008-07-30 2009-07-22 場加強感應耦合電漿（ｆｅ－ｉｃｐ）反應器 TWI428061B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/182,342 US8299391B2 (en) 2008-07-30 2008-07-30 Field enhanced inductively coupled plasma (Fe-ICP) reactor

Publications (2)

Publication Number Publication Date
TW201036496A TW201036496A (en) 2010-10-01
TWI428061B true TWI428061B (zh) 2014-02-21

Family

ID=41607280

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098124752A TWI428061B (zh) 2008-07-30 2009-07-22 場加強感應耦合電漿（ｆｅ－ｉｃｐ）反應器

Country Status (6)

Country Link
US (1) US8299391B2 (enExample)
JP (1) JP5740304B2 (enExample)
KR (1) KR20110038150A (enExample)
CN (1) CN102106192B (enExample)
TW (1) TWI428061B (enExample)
WO (1) WO2010014433A2 (enExample)

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US12288672B2 (en) 2020-01-15 2025-04-29 Applied Materials, Inc. Methods and apparatus for carbon compound film deposition
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Also Published As

Publication number Publication date
CN102106192A (zh) 2011-06-22
CN102106192B (zh) 2014-11-26
JP5740304B2 (ja) 2015-06-24
JP2011530143A (ja) 2011-12-15
US8299391B2 (en) 2012-10-30
KR20110038150A (ko) 2011-04-13
TW201036496A (en) 2010-10-01
US20100025384A1 (en) 2010-02-04
WO2010014433A2 (en) 2010-02-04
WO2010014433A3 (en) 2010-04-15

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