TWI428061B - 場加強感應耦合電漿（ｆｅ－ｉｃｐ）反應器 - Google Patents

場加強感應耦合電漿（ｆｅ－ｉｃｐ）反應器 Download PDF

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Publication number
TWI428061B
TWI428061B TW098124752A TW98124752A TWI428061B TW I428061 B TWI428061 B TW I428061B TW 098124752 A TW098124752 A TW 098124752A TW 98124752 A TW98124752 A TW 98124752A TW I428061 B TWI428061 B TW I428061B
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TW
Taiwan
Prior art keywords
electrodes
plasma
power
processing chamber
coupled
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Application number
TW098124752A
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English (en)
Chinese (zh)
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TW201036496A (en
Inventor
Valentin N Todorow
Samer Banna
Kartik Ramaswamy
Michael D Willwerth
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Applied Materials Inc
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Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW201036496A publication Critical patent/TW201036496A/zh
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Publication of TWI428061B publication Critical patent/TWI428061B/zh

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
TW098124752A 2008-07-30 2009-07-22 場加強感應耦合電漿（ｆｅ－ｉｃｐ）反應器 TWI428061B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/182,342 US8299391B2 (en) 2008-07-30 2008-07-30 Field enhanced inductively coupled plasma (Fe-ICP) reactor

Publications (2)

Publication Number Publication Date
TW201036496A TW201036496A (en) 2010-10-01
TWI428061B true TWI428061B (zh) 2014-02-21

Family

ID=41607280

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098124752A TWI428061B (zh) 2008-07-30 2009-07-22 場加強感應耦合電漿（ｆｅ－ｉｃｐ）反應器

Country Status (6)

Country Link
US (1) US8299391B2 (enExample)
JP (1) JP5740304B2 (enExample)
KR (1) KR20110038150A (enExample)
CN (1) CN102106192B (enExample)
TW (1) TWI428061B (enExample)
WO (1) WO2010014433A2 (enExample)

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US9082589B2 (en) * 2012-10-09 2015-07-14 Novellus Systems, Inc. Hybrid impedance matching for inductively coupled plasma system
US20140102641A1 (en) * 2012-10-11 2014-04-17 Smatek Co., Ltd Field enhanced inductively coupled plasma processing apparatus and plasma forming method
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US20140367043A1 (en) * 2013-06-17 2014-12-18 Applied Materials, Inc. Method for fast and repeatable plasma ignition and tuning in plasma chambers
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US10249479B2 (en) * 2015-01-30 2019-04-02 Applied Materials, Inc. Magnet configurations for radial uniformity tuning of ICP plasmas
US10062585B2 (en) * 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10395896B2 (en) 2017-03-03 2019-08-27 Applied Materials, Inc. Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation
US10283329B2 (en) * 2017-07-10 2019-05-07 Applied Materials, Inc. ICP source for M and W-shape discharge profile control
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WO2021022303A1 (en) 2019-07-31 2021-02-04 Lam Research Corporation Radio frequency power generator having multiple output ports
CN120280325A (zh) 2019-12-02 2025-07-08 朗姆研究公司 射频辅助等离子体生成中的阻抗变换
US12288672B2 (en) 2020-01-15 2025-04-29 Applied Materials, Inc. Methods and apparatus for carbon compound film deposition
US11545346B2 (en) * 2020-03-06 2023-01-03 Applied Materials, Inc. Capacitive sensing data integration for plasma chamber condition monitoring
US11994542B2 (en) 2020-03-27 2024-05-28 Lam Research Corporation RF signal parameter measurement in an integrated circuit fabrication chamber
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US11776788B2 (en) * 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
CN115708395A (zh) * 2021-08-18 2023-02-21 北京北方华创微电子装备有限公司 等离子体发生装置及半导体工艺设备
KR20230056817A (ko) * 2021-10-20 2023-04-28 세메스 주식회사 안테나 부재 및 기판 처리 장치
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Also Published As

Publication number Publication date
TW201036496A (en) 2010-10-01
KR20110038150A (ko) 2011-04-13
WO2010014433A3 (en) 2010-04-15
JP5740304B2 (ja) 2015-06-24
WO2010014433A2 (en) 2010-02-04
CN102106192A (zh) 2011-06-22
CN102106192B (zh) 2014-11-26
US20100025384A1 (en) 2010-02-04
JP2011530143A (ja) 2011-12-15
US8299391B2 (en) 2012-10-30

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