TWI428061B - 場加強感應耦合電漿(fe-icp)反應器 - Google Patents
場加強感應耦合電漿(fe-icp)反應器 Download PDFInfo
- Publication number
- TWI428061B TWI428061B TW098124752A TW98124752A TWI428061B TW I428061 B TWI428061 B TW I428061B TW 098124752 A TW098124752 A TW 098124752A TW 98124752 A TW98124752 A TW 98124752A TW I428061 B TWI428061 B TW I428061B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrodes
- plasma
- power
- processing chamber
- coupled
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H10P50/242—
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/182,342 US8299391B2 (en) | 2008-07-30 | 2008-07-30 | Field enhanced inductively coupled plasma (Fe-ICP) reactor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201036496A TW201036496A (en) | 2010-10-01 |
| TWI428061B true TWI428061B (zh) | 2014-02-21 |
Family
ID=41607280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098124752A TWI428061B (zh) | 2008-07-30 | 2009-07-22 | 場加強感應耦合電漿(fe-icp)反應器 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8299391B2 (enExample) |
| JP (1) | JP5740304B2 (enExample) |
| KR (1) | KR20110038150A (enExample) |
| CN (1) | CN102106192B (enExample) |
| TW (1) | TWI428061B (enExample) |
| WO (1) | WO2010014433A2 (enExample) |
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| US20110094994A1 (en) | 2009-10-26 | 2011-04-28 | Applied Materials, Inc. | Inductively coupled plasma apparatus |
| US20110097901A1 (en) * | 2009-10-26 | 2011-04-28 | Applied Materials, Inc. | Dual mode inductively coupled plasma reactor with adjustable phase coil assembly |
| US8652297B2 (en) * | 2010-08-03 | 2014-02-18 | Applied Materials, Inc. | Symmetric VHF plasma power coupler with active uniformity steering |
| TR201907297T4 (tr) * | 2010-09-16 | 2019-06-21 | Koninklijke Philips Nv | Görüntülerin geliştirilmiş kodlanması için cihazlar ve yöntemler. |
| US10595365B2 (en) * | 2010-10-19 | 2020-03-17 | Applied Materials, Inc. | Chamber lid heater ring assembly |
| US8492980B2 (en) | 2010-10-28 | 2013-07-23 | Applied Materials, Inc. | Methods for calibrating RF power applied to a plurality of RF coils in a plasma processing system |
| KR101760548B1 (ko) | 2011-03-30 | 2017-07-21 | 제너럴 일렉트릭 캄파니 | 이미지 콘텐츠에 기초하여 휘도를 자동으로 검출하는 방법 및 장치 |
| KR101251930B1 (ko) * | 2011-06-03 | 2013-04-08 | (주)스마텍 | 필드 강화 유도 결합 플라즈마 처리 장치 및 플라즈마 형성 방법 |
| US20130017315A1 (en) * | 2011-07-15 | 2013-01-17 | Applied Materials, Inc. | Methods and apparatus for controlling power distribution in substrate processing systems |
| US8808561B2 (en) * | 2011-11-15 | 2014-08-19 | Lam Research Coporation | Inert-dominant pulsing in plasma processing systems |
| US9324589B2 (en) * | 2012-02-28 | 2016-04-26 | Lam Research Corporation | Multiplexed heater array using AC drive for semiconductor processing |
| US9082589B2 (en) * | 2012-10-09 | 2015-07-14 | Novellus Systems, Inc. | Hybrid impedance matching for inductively coupled plasma system |
| US20140102641A1 (en) * | 2012-10-11 | 2014-04-17 | Smatek Co., Ltd | Field enhanced inductively coupled plasma processing apparatus and plasma forming method |
| US20140367043A1 (en) * | 2013-06-17 | 2014-12-18 | Applied Materials, Inc. | Method for fast and repeatable plasma ignition and tuning in plasma chambers |
| WO2014204598A1 (en) * | 2013-06-17 | 2014-12-24 | Applied Materials, Inc. | Enhanced plasma source for a plasma reactor |
| CN104684235B (zh) * | 2013-11-28 | 2017-07-07 | 中微半导体设备(上海)有限公司 | 一种电感线圈组及电感耦合等离子体处理装置 |
| US10249479B2 (en) * | 2015-01-30 | 2019-04-02 | Applied Materials, Inc. | Magnet configurations for radial uniformity tuning of ICP plasmas |
| US10062585B2 (en) * | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
| US10395896B2 (en) | 2017-03-03 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation |
| US10283329B2 (en) * | 2017-07-10 | 2019-05-07 | Applied Materials, Inc. | ICP source for M and W-shape discharge profile control |
| KR102791775B1 (ko) | 2019-05-07 | 2025-04-03 | 램 리써치 코포레이션 | 폐루프 다중 출력 rf 매칭 |
| KR102041518B1 (ko) * | 2019-07-18 | 2019-11-06 | 에이피티씨 주식회사 | 분리형 플라즈마 소스 코일 및 이의 제어 방법 |
| KR102882813B1 (ko) | 2019-07-31 | 2025-11-06 | 램 리써치 코포레이션 | 복수의 출력 포트들을 갖는 무선 주파수 (radio frequency) 전력 생성기 |
| CN114762079B (zh) | 2019-12-02 | 2025-02-28 | 朗姆研究公司 | 射频辅助等离子体生成中的阻抗变换 |
| US12288672B2 (en) | 2020-01-15 | 2025-04-29 | Applied Materials, Inc. | Methods and apparatus for carbon compound film deposition |
| US11545346B2 (en) * | 2020-03-06 | 2023-01-03 | Applied Materials, Inc. | Capacitive sensing data integration for plasma chamber condition monitoring |
| US11994542B2 (en) | 2020-03-27 | 2024-05-28 | Lam Research Corporation | RF signal parameter measurement in an integrated circuit fabrication chamber |
| CN116075917A (zh) | 2020-06-12 | 2023-05-05 | 朗姆研究公司 | 通过rf耦合结构对等离子体形成的控制 |
| WO2022146648A1 (en) | 2020-12-28 | 2022-07-07 | Mattson Technology, Inc. | Induction coil assembly for plasma processing apparatus |
| TWI829156B (zh) | 2021-05-25 | 2024-01-11 | 大陸商北京屹唐半導體科技股份有限公司 | 電漿源陣列、電漿處理設備、電漿處理系統以及用於在電漿處理設備中加工工件的方法 |
| US11776788B2 (en) * | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
| CN115708395A (zh) * | 2021-08-18 | 2023-02-21 | 北京北方华创微电子装备有限公司 | 等离子体发生装置及半导体工艺设备 |
| KR20230056817A (ko) * | 2021-10-20 | 2023-04-28 | 세메스 주식회사 | 안테나 부재 및 기판 처리 장치 |
| US12463011B2 (en) | 2023-11-11 | 2025-11-04 | Applied Materials Inc. | Inductively coupled plasma source with radial coil network |
| KR20250089032A (ko) * | 2023-12-11 | 2025-06-18 | 한양대학교 산학협력단 | Rf 에너지를 이용한 가열 장치 |
| US20250323023A1 (en) * | 2024-04-16 | 2025-10-16 | Applied Materials Inc | Heated Lid Ring for Chamber Wall Temperature Control |
| US20250349509A1 (en) * | 2024-05-13 | 2025-11-13 | Applied Materials, Inc. | Methods and apparatus that use inductively coupled plasma resonator sources |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5556501A (en) * | 1989-10-03 | 1996-09-17 | Applied Materials, Inc. | Silicon scavenger in an inductively coupled RF plasma reactor |
| US6280563B1 (en) * | 1997-12-31 | 2001-08-28 | Lam Research Corporation | Plasma device including a powered non-magnetic metal member between a plasma AC excitation source and the plasma |
| TW200808135A (en) * | 2006-05-22 | 2008-02-01 | New Power Plasma Co Ltd | Inductively coupled plasma reactor |
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| JP3086096B2 (ja) | 1992-12-22 | 2000-09-11 | 沖電気工業株式会社 | 有磁場プラズマ処理装置 |
| US5865896A (en) | 1993-08-27 | 1999-02-02 | Applied Materials, Inc. | High density plasma CVD reactor with combined inductive and capacitive coupling |
| US6308654B1 (en) * | 1996-10-18 | 2001-10-30 | Applied Materials, Inc. | Inductively coupled parallel-plate plasma reactor with a conical dome |
| US5824607A (en) | 1997-02-06 | 1998-10-20 | Applied Materials, Inc. | Plasma confinement for an inductively coupled plasma reactor |
| KR100372317B1 (ko) | 1997-03-17 | 2003-05-16 | 마쯔시다덴기산교 가부시키가이샤 | 플라즈마처리방법및장치 |
| JP3379394B2 (ja) * | 1997-07-28 | 2003-02-24 | 松下電器産業株式会社 | プラズマ処理方法及び装置 |
| US6287435B1 (en) | 1998-05-06 | 2001-09-11 | Tokyo Electron Limited | Method and apparatus for ionized physical vapor deposition |
| JP4852189B2 (ja) * | 1999-03-09 | 2012-01-11 | 株式会社日立製作所 | プラズマ処理装置及びプラズマ処理方法 |
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| JP4323021B2 (ja) * | 1999-09-13 | 2009-09-02 | 株式会社エフオーアイ | プラズマ処理装置 |
| JP3769157B2 (ja) * | 1999-11-15 | 2006-04-19 | 松下電器産業株式会社 | ウェハのドライエッチング装置およびドライエッチング方法 |
| JP2004165674A (ja) * | 2000-01-26 | 2004-06-10 | Matsushita Electric Ind Co Ltd | ワークのプラズマ処理装置およびワークのプラズマ処理方法 |
| US6447636B1 (en) * | 2000-02-16 | 2002-09-10 | Applied Materials, Inc. | Plasma reactor with dynamic RF inductive and capacitive coupling control |
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| KR20010044059A (ko) * | 2000-06-29 | 2001-06-05 | 박용석 | 유리기판 또는 웨이퍼 처리용 전자 사이클로트론 공명에슁장치 |
| AU2001281306A1 (en) * | 2000-07-13 | 2002-01-30 | Tokyo Electron Limited | Adjustable segmented electrode apparatus and method |
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| JP2008513993A (ja) * | 2004-09-14 | 2008-05-01 | アダプティーブ プラズマ テクノロジー コープ | 適応型プラズマソース及びこれを用いた半導体ウェハー処理方法 |
| US8012306B2 (en) * | 2006-02-15 | 2011-09-06 | Lam Research Corporation | Plasma processing reactor with multiple capacitive and inductive power sources |
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-
2008
- 2008-07-30 US US12/182,342 patent/US8299391B2/en active Active
-
2009
- 2009-07-17 JP JP2011521185A patent/JP5740304B2/ja not_active Expired - Fee Related
- 2009-07-17 WO PCT/US2009/050916 patent/WO2010014433A2/en not_active Ceased
- 2009-07-17 KR KR1020117004491A patent/KR20110038150A/ko not_active Ceased
- 2009-07-17 CN CN200980129618.5A patent/CN102106192B/zh not_active Expired - Fee Related
- 2009-07-22 TW TW098124752A patent/TWI428061B/zh not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5556501A (en) * | 1989-10-03 | 1996-09-17 | Applied Materials, Inc. | Silicon scavenger in an inductively coupled RF plasma reactor |
| US6280563B1 (en) * | 1997-12-31 | 2001-08-28 | Lam Research Corporation | Plasma device including a powered non-magnetic metal member between a plasma AC excitation source and the plasma |
| TW200808135A (en) * | 2006-05-22 | 2008-02-01 | New Power Plasma Co Ltd | Inductively coupled plasma reactor |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010014433A2 (en) | 2010-02-04 |
| TW201036496A (en) | 2010-10-01 |
| CN102106192B (zh) | 2014-11-26 |
| KR20110038150A (ko) | 2011-04-13 |
| JP5740304B2 (ja) | 2015-06-24 |
| WO2010014433A3 (en) | 2010-04-15 |
| US20100025384A1 (en) | 2010-02-04 |
| US8299391B2 (en) | 2012-10-30 |
| CN102106192A (zh) | 2011-06-22 |
| JP2011530143A (ja) | 2011-12-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |