JP5740304B2 - フィールド強化型誘導結合プラズマ処理システムおよびプラズマ形成方法 - Google Patents

フィールド強化型誘導結合プラズマ処理システムおよびプラズマ形成方法 Download PDF

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JP5740304B2
JP5740304B2 JP2011521185A JP2011521185A JP5740304B2 JP 5740304 B2 JP5740304 B2 JP 5740304B2 JP 2011521185 A JP2011521185 A JP 2011521185A JP 2011521185 A JP2011521185 A JP 2011521185A JP 5740304 B2 JP5740304 B2 JP 5740304B2
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electrodes
plasma
lid
coils
coupled
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JP2011530143A5 (enExample
JP2011530143A (ja
Inventor
バレンタイン エヌ トドロウ
バレンタイン エヌ トドロウ
サマー バンナ
サマー バンナ
カーティク ラマスワミ
カーティク ラマスワミ
マイケル ディー ウィルワース
マイケル ディー ウィルワース
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2011521185A 2008-07-30 2009-07-17 フィールド強化型誘導結合プラズマ処理システムおよびプラズマ形成方法 Expired - Fee Related JP5740304B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/182,342 US8299391B2 (en) 2008-07-30 2008-07-30 Field enhanced inductively coupled plasma (Fe-ICP) reactor
US12/182,342 2008-07-30
PCT/US2009/050916 WO2010014433A2 (en) 2008-07-30 2009-07-17 Field enhanced inductively coupled plasma (fe-icp) reactor

Publications (3)

Publication Number Publication Date
JP2011530143A JP2011530143A (ja) 2011-12-15
JP2011530143A5 JP2011530143A5 (enExample) 2013-06-27
JP5740304B2 true JP5740304B2 (ja) 2015-06-24

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JP2011521185A Expired - Fee Related JP5740304B2 (ja) 2008-07-30 2009-07-17 フィールド強化型誘導結合プラズマ処理システムおよびプラズマ形成方法

Country Status (6)

Country Link
US (1) US8299391B2 (enExample)
JP (1) JP5740304B2 (enExample)
KR (1) KR20110038150A (enExample)
CN (1) CN102106192B (enExample)
TW (1) TWI428061B (enExample)
WO (1) WO2010014433A2 (enExample)

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US12288672B2 (en) 2020-01-15 2025-04-29 Applied Materials, Inc. Methods and apparatus for carbon compound film deposition
US11545346B2 (en) * 2020-03-06 2023-01-03 Applied Materials, Inc. Capacitive sensing data integration for plasma chamber condition monitoring
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Also Published As

Publication number Publication date
TW201036496A (en) 2010-10-01
KR20110038150A (ko) 2011-04-13
WO2010014433A3 (en) 2010-04-15
WO2010014433A2 (en) 2010-02-04
CN102106192A (zh) 2011-06-22
CN102106192B (zh) 2014-11-26
TWI428061B (zh) 2014-02-21
US20100025384A1 (en) 2010-02-04
JP2011530143A (ja) 2011-12-15
US8299391B2 (en) 2012-10-30

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