KR20110038150A - 필드 강화 유도 결합 플라즈마 반응기 - Google Patents

필드 강화 유도 결합 플라즈마 반응기 Download PDF

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Publication number
KR20110038150A
KR20110038150A KR1020117004491A KR20117004491A KR20110038150A KR 20110038150 A KR20110038150 A KR 20110038150A KR 1020117004491 A KR1020117004491 A KR 1020117004491A KR 20117004491 A KR20117004491 A KR 20117004491A KR 20110038150 A KR20110038150 A KR 20110038150A
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KR
South Korea
Prior art keywords
electrodes
plasma
coils
inductively coupled
process chamber
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KR1020117004491A
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English (en)
Korean (ko)
Inventor
발렌틴 엔. 토도로우
사머 반나
카르틱 라마스와미
마이클 디. 윌워스
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어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20110038150A publication Critical patent/KR20110038150A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1020117004491A 2008-07-30 2009-07-17 필드 강화 유도 결합 플라즈마 반응기 Ceased KR20110038150A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/182,342 US8299391B2 (en) 2008-07-30 2008-07-30 Field enhanced inductively coupled plasma (Fe-ICP) reactor
US12/182,342 2008-07-30

Publications (1)

Publication Number Publication Date
KR20110038150A true KR20110038150A (ko) 2011-04-13

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KR1020117004491A Ceased KR20110038150A (ko) 2008-07-30 2009-07-17 필드 강화 유도 결합 플라즈마 반응기

Country Status (6)

Country Link
US (1) US8299391B2 (enExample)
JP (1) JP5740304B2 (enExample)
KR (1) KR20110038150A (enExample)
CN (1) CN102106192B (enExample)
TW (1) TWI428061B (enExample)
WO (1) WO2010014433A2 (enExample)

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KR102041518B1 (ko) * 2019-07-18 2019-11-06 에이피티씨 주식회사 분리형 플라즈마 소스 코일 및 이의 제어 방법
WO2021022303A1 (en) 2019-07-31 2021-02-04 Lam Research Corporation Radio frequency power generator having multiple output ports
CN120280325A (zh) 2019-12-02 2025-07-08 朗姆研究公司 射频辅助等离子体生成中的阻抗变换
US12288672B2 (en) 2020-01-15 2025-04-29 Applied Materials, Inc. Methods and apparatus for carbon compound film deposition
US11545346B2 (en) * 2020-03-06 2023-01-03 Applied Materials, Inc. Capacitive sensing data integration for plasma chamber condition monitoring
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Also Published As

Publication number Publication date
TW201036496A (en) 2010-10-01
WO2010014433A3 (en) 2010-04-15
JP5740304B2 (ja) 2015-06-24
WO2010014433A2 (en) 2010-02-04
CN102106192A (zh) 2011-06-22
CN102106192B (zh) 2014-11-26
TWI428061B (zh) 2014-02-21
US20100025384A1 (en) 2010-02-04
JP2011530143A (ja) 2011-12-15
US8299391B2 (en) 2012-10-30

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