KR101142411B1 - 플라즈마처리장치 - Google Patents

플라즈마처리장치 Download PDF

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Publication number
KR101142411B1
KR101142411B1 KR1020100013164A KR20100013164A KR101142411B1 KR 101142411 B1 KR101142411 B1 KR 101142411B1 KR 1020100013164 A KR1020100013164 A KR 1020100013164A KR 20100013164 A KR20100013164 A KR 20100013164A KR 101142411 B1 KR101142411 B1 KR 101142411B1
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South Korea
Prior art keywords
faraday shield
disposed
plasma
antenna
faraday
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Expired - Fee Related
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KR1020100013164A
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English (en)
Korean (ko)
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KR20110065252A (ko
Inventor
유사쿠 삿카
겐 요시오카
료지 니시오
Original Assignee
가부시키가이샤 히다치 하이테크놀로지즈
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Publication of KR20110065252A publication Critical patent/KR20110065252A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020100013164A 2009-12-09 2010-02-12 플라즈마처리장치 Expired - Fee Related KR101142411B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2009-279035 2009-12-09
JP2009279035A JP2011124293A (ja) 2009-12-09 2009-12-09 プラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20110065252A KR20110065252A (ko) 2011-06-15
KR101142411B1 true KR101142411B1 (ko) 2012-05-07

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ID=44080850

Family Applications (1)

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KR1020100013164A Expired - Fee Related KR101142411B1 (ko) 2009-12-09 2010-02-12 플라즈마처리장치

Country Status (3)

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US (1) US20110132540A1 (enExample)
JP (1) JP2011124293A (enExample)
KR (1) KR101142411B1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5711953B2 (ja) * 2010-12-13 2015-05-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5856791B2 (ja) * 2011-10-05 2016-02-10 株式会社日立ハイテクノロジーズ プラズマ処理装置
WO2013099372A1 (ja) * 2011-12-27 2013-07-04 キヤノンアネルバ株式会社 放電容器及びプラズマ処理装置
DE102012103425A1 (de) * 2012-04-19 2013-10-24 Roth & Rau Ag Mikrowellenplasmaerzeugungsvorrichtung und Verfahren zu deren Betrieb
JP6620078B2 (ja) 2016-09-05 2019-12-11 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP7042143B2 (ja) * 2018-03-30 2022-03-25 株式会社ダイヘン プラズマ発生装置
JP7042142B2 (ja) * 2018-03-30 2022-03-25 株式会社ダイヘン プラズマ発生装置
JP7139181B2 (ja) * 2018-07-26 2022-09-20 ワイエイシイテクノロジーズ株式会社 プラズマ処理装置
US20200286712A1 (en) * 2019-03-05 2020-09-10 Advanced Energy Industries, Inc. Single-turn and laminated-wall inductively coupled plasma sources
KR102540773B1 (ko) * 2021-01-19 2023-06-12 피에스케이 주식회사 패러데이 실드 및 기판 처리 장치
CN114864367A (zh) * 2022-03-25 2022-08-05 上海谙邦半导体设备有限公司 一种具有屏蔽效果的介质管及等离子体反应腔

Citations (4)

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Publication number Priority date Publication date Assignee Title
KR20040077019A (ko) * 2003-02-27 2004-09-04 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마처리장치 및 처리방법
KR100452920B1 (ko) 2002-07-19 2004-10-14 한국디엔에스 주식회사 유도결합형 플라즈마 에칭 장치
US20050194355A1 (en) 2002-07-31 2005-09-08 Lam Research Corporation Method for adjusting voltage on a powered faraday shield
KR100783071B1 (ko) 2006-12-22 2007-12-07 세메스 주식회사 패러데이 실드 유닛 및 이를 갖는 기판 처리 장치

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US6024826A (en) * 1996-05-13 2000-02-15 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6063233A (en) * 1991-06-27 2000-05-16 Applied Materials, Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US5540800A (en) * 1994-06-23 1996-07-30 Applied Materials, Inc. Inductively coupled high density plasma reactor for plasma assisted materials processing
US5650032A (en) * 1995-06-06 1997-07-22 International Business Machines Corporation Apparatus for producing an inductive plasma for plasma processes
US6132551A (en) * 1997-09-20 2000-10-17 Applied Materials, Inc. Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil
US6149760A (en) * 1997-10-20 2000-11-21 Tokyo Electron Yamanashi Limited Plasma processing apparatus
US6280563B1 (en) * 1997-12-31 2001-08-28 Lam Research Corporation Plasma device including a powered non-magnetic metal member between a plasma AC excitation source and the plasma
KR100542459B1 (ko) * 1999-03-09 2006-01-12 가부시끼가이샤 히다치 세이사꾸쇼 플라즈마처리장치 및 플라즈마처리방법
JP4384301B2 (ja) * 1999-09-13 2009-12-16 株式会社日立製作所 プラズマ処理装置
US6447636B1 (en) * 2000-02-16 2002-09-10 Applied Materials, Inc. Plasma reactor with dynamic RF inductive and capacitive coupling control
US6685799B2 (en) * 2001-03-14 2004-02-03 Applied Materials Inc. Variable efficiency faraday shield
US20070170867A1 (en) * 2006-01-24 2007-07-26 Varian Semiconductor Equipment Associates, Inc. Plasma Immersion Ion Source With Low Effective Antenna Voltage
JP4659771B2 (ja) * 2007-02-13 2011-03-30 株式会社日立ハイテクノロジーズ プラズマ処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100452920B1 (ko) 2002-07-19 2004-10-14 한국디엔에스 주식회사 유도결합형 플라즈마 에칭 장치
US20050194355A1 (en) 2002-07-31 2005-09-08 Lam Research Corporation Method for adjusting voltage on a powered faraday shield
KR20040077019A (ko) * 2003-02-27 2004-09-04 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마처리장치 및 처리방법
KR100783071B1 (ko) 2006-12-22 2007-12-07 세메스 주식회사 패러데이 실드 유닛 및 이를 갖는 기판 처리 장치

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KR20110065252A (ko) 2011-06-15
JP2011124293A (ja) 2011-06-23
US20110132540A1 (en) 2011-06-09

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