JP2011118877A - 表示装置及び半導体装置 - Google Patents
表示装置及び半導体装置 Download PDFInfo
- Publication number
- JP2011118877A JP2011118877A JP2010232286A JP2010232286A JP2011118877A JP 2011118877 A JP2011118877 A JP 2011118877A JP 2010232286 A JP2010232286 A JP 2010232286A JP 2010232286 A JP2010232286 A JP 2010232286A JP 2011118877 A JP2011118877 A JP 2011118877A
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- bit count
- photosensor
- light
- bit
- backlight
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Abstract
【解決手段】フォトセンサが配置された表示パネルでは、対象物の画像を取り込む際、光源から対象物に光が照射され、反射された光がフォトセンサに入射される。その際、フォトセンサの感度に対して入射光が強すぎる場合には光源の輝度を小さくし、逆にフォトセンサの感度に対して入射光が弱すぎる場合には光源の輝度を大きくする。
【選択図】図1
Description
実施の形態1では、図1〜3を用いて、表示パネルを有する表示装置とその動作を説明する。
本実施の形態では、ビットカウント数の分布が平坦である場合に、バックライトを調光する方法を説明する。ビットカウント数の測定までは、実施の形態1と同様であり、画素数を3×3のm=9個、ビットの数をn=6ビットとして測定する。
本実施の形態では、実施の形態1、2で説明した表示パネルを有する表示装置において、表示素子がEL素子等の発光素子を有する場合について説明する。
本実施の形態では、表示パネルの構造について、図7を用いて説明する。本実施の形態では、表示素子が液晶素子を有し、光源としてバックライトを有している。
図8に、表示パネルの断面図の別の一例を示す。図8に示す表示パネルでは、基板2000上に、フォトセンサ3001、薄膜トランジスタ3002、保持容量3003が設けられている。
図9に、表示パネルの断面図の別の一例を示す。実施の形態5と同様に、基板2000上に、フォトセンサ3001、薄膜トランジスタ3002、保持容量3003が設けられている。
図10に、表示素子が発光素子を有する表示装置について説明する。
本実施の形態では、電子機器の一例について、図11を用いて説明する。
本実施の形態では、電子機器の一例について、図12を用いて説明する。
101 表示パネル
102 A/D変換部
103 ビットカウント測定部
104 コントローラ
105 バックライト部
107 画素
108 表示素子
109 フォトセンサ
A〜I 画素
600 表示装置
601 表示パネル
602 A/D変換部
603 ビットカウント測定部
604 コントローラ
607 画素
608 表示素子
609 フォトセンサ
2000 基板
2001 薄膜トランジスタ
2002 薄膜トランジスタ
2003 フォトセンサ
2004 絶縁層
2005 絶縁層
2006 絶縁層
2007 画素電極
2008 下部電極
2010 n型半導体層
2011 i型半導体層
2012 p型半導体層
2013 ゲート電極
2014 信号線
2020 対向基板
2021 対向電極
2022 カラーフィルタ層
2023 オーバーコート層
2024 液晶層
2035 対象物
2036 矢印
2037 矢印
3001 フォトセンサ
3002 薄膜トランジスタ
3003 保持容量
3004 半導体膜
3005 遮蔽膜
4001 遮蔽膜
4036 矢印
4037 矢印
2100 基板
2101 薄膜トランジスタ
2102 薄膜トランジスタ
2103 フォトセンサ
2104 絶縁層
2105 絶縁層
2106 絶縁層
2109 センサ用配線
2110 n型半導体層
2111 i型半導体層
2112 p型半導体層
2120 対向基板
2123 画素電極
2124 発光層
2125 対向電極
2126 バンク
2127 EL素子
2135 対象物
5001 表示部
5002 表示部
5003 表示部
5004 表示部
9001 本体
9101 ライティング部
Claims (5)
- フォトセンサを有する入力部、光源、A/D変換部、ビットカウント測定部、及びコントローラを有し、
前記入力部は、前記光源からの光に対する対象物の反射光を前記フォトセンサにより受光することで、前記対象物の画像を取り込む手段を有し、
前記A/D変換部は、前記対象物の画像の画像データをデジタル信号に変換する手段を有し、
前記ビットカウント測定部は、前記デジタル信号の各ビットのビットカウント数を測定する手段を有し、
前記コントローラは、前記ビットカウント数に応じて前記光源の輝度を調節する手段を有することを特徴とする半導体装置。 - フォトセンサを有する表示パネル、バックライト、A/D変換部、ビットカウント測定部、及びコントローラを有し、
前記表示パネルは、前記バックライトからの光に対する対象物の反射光を前記フォトセンサにより受光することで、前記対象物の画像を取り込む手段を有し、
前記A/D変換部は、前記対象物の画像の画像データをデジタル信号に変換する手段を有し、
前記ビットカウント測定部は、前記デジタル信号の各ビットのビットカウント数を測定する手段を有し、
前記コントローラは、前記ビットカウント数に応じて前記バックライトの輝度を調節する手段を有することを特徴とする表示装置。 - フォトセンサを有する表示パネル、バックライト、A/D変換部、ビットカウント測定部、及びコントローラを有し、
前記表示パネルは、前記バックライトからの光に対する対象物の反射光を前記フォトセンサにより受光することで、前記対象物の画像を取り込む手段を有し、
前記A/D変換部は、前記対象物の画像の画像データをデジタル信号に変換する手段を有し、
前記ビットカウント測定部は、前記デジタル信号の各ビットのビットカウント数を測定する手段と、前記受光した光が前記フォトセンサの感度に適しているか否かを前記ビットカウント数の分布に従って判定する手段とを有し、
前記コントローラは、前記判定の結果に応じて前記バックライトの輝度を調節する手段を有することを特徴とする表示装置。 - フォトセンサを有する表示パネル、バックライト、A/D変換部、ビットカウント測定部、及びコントローラを有し、
前記表示パネルは、前記バックライトからの光に対する対象物の反射光を前記フォトセンサにより受光することで、前記対象物の画像を取り込む手段を有し、
前記A/D変換部は、前記対象物の画像の画像データをデジタル信号に変換する手段を有し、
前記ビットカウント測定部は、前記デジタル信号の各ビットのビットカウント数を測定する手段と、前記受光した光が前記フォトセンサの感度に適しているか否かを前記ビットカウント数の分布に従って判定する手段とを有し、
前記コントローラは、前記ビットカウント数の分布において、前記ビットカウント数のピークが中央ビットに位置するように、前記バックライトの輝度を調節する手段を有することを特徴とする表示装置。 - フォトセンサを有する表示パネル、バックライト、A/D変換部、ビットカウント測定部、及びコントローラを有し、
前記表示パネルは、前記バックライトからの光に対する対象物の反射光を前記フォトセンサにより受光することで、前記対象物の画像を取り込む手段を有し、
前記A/D変換部は、前記対象物の画像の画像データをデジタル信号に変換する手段を有し、
前記ビットカウント測定部は、前記デジタル信号の各ビットのビットカウント数を測定する手段と、前記受光した光が前記フォトセンサの感度に適しているか否かを前記ビットカウント数の分布に従って判定する手段とを有し、
前記コントローラは、前記ビットカウント数の分布において、前記各ビットのビットカウント数の平均値が前記ビットカウント数のピークの中央値になるように、前記バックライトの輝度を調節する手段を有することを特徴とする表示装置。
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Also Published As
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US8988405B2 (en) | 2015-03-24 |
KR20110046303A (ko) | 2011-05-04 |
US20110096047A1 (en) | 2011-04-28 |
KR101752648B1 (ko) | 2017-06-30 |
JP5740132B2 (ja) | 2015-06-24 |
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