WO2021204093A1 - 一种显示屏和电子设备 - Google Patents

一种显示屏和电子设备 Download PDF

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Publication number
WO2021204093A1
WO2021204093A1 PCT/CN2021/085450 CN2021085450W WO2021204093A1 WO 2021204093 A1 WO2021204093 A1 WO 2021204093A1 CN 2021085450 W CN2021085450 W CN 2021085450W WO 2021204093 A1 WO2021204093 A1 WO 2021204093A1
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WO
WIPO (PCT)
Prior art keywords
light
display screen
base substrate
light sensor
layer
Prior art date
Application number
PCT/CN2021/085450
Other languages
English (en)
French (fr)
Inventor
蔡奇
黄宗兴
彭旭
Original Assignee
华为技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN202010280694.4A external-priority patent/CN113540155B/zh
Priority claimed from CN202010560975.5A external-priority patent/CN113820878A/zh
Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Publication of WO2021204093A1 publication Critical patent/WO2021204093A1/zh

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G5/00—Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators
    • G09G5/10—Intensity circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers

Definitions

  • This application relates to the field of display technology, and in particular to a display screen and electronic equipment.
  • the embodiments of the present application provide a display screen and an electronic device, which are used to reduce the notch area of the display screen and increase the screen-to-body ratio of the electronic device.
  • a display screen has a display area.
  • the display screen includes a plurality of sub-pixels and at least one light sensor.
  • the sub-pixel is arranged in the display area, and the sub-pixel has an effective display area.
  • At least one light sensor is arranged in the display area, and the light sensor is located between the effective display areas of adjacent sub-pixels.
  • the bangs of the display screen can be reduced or removed, thereby increasing the area for the layout of the sub-pixels in the display screen Increase the screen-to-body ratio of electronic equipment.
  • the at least one light sensor includes an ambient light sensor.
  • the ambient light sensor includes a first photosensitive element and a first switching transistor.
  • the first photosensitive element is used for photoelectric conversion of ambient light incident on the display screen, and generates an electrical signal.
  • the first switch transistor is coupled to the first photosensitive element, and the first switch transistor is used for outputting the electrical signal generated by the first photosensitive element when it is in a conducting state.
  • the brightness of the display screen can be adjusted according to the obtained electrical signal, and the function of adjusting the brightness of the display screen according to the brightness of the ambient light is realized.
  • the at least one light sensor includes a proximity light sensor.
  • the proximity light sensor includes a transmitter and a receiver.
  • the transmitter is used to emit light to the display side of the display screen, and the light to be emitted is used to be incident on the measured object located on the display side of the display screen.
  • the receiver is used to receive the reflected light reflected by the measured object.
  • the receiver can determine the distance between the measured object and the display screen according to the reflected light from the measured object, and then adjust the brightness of the display screen to realize the brightness of the display screen according to the distance between the measured object and the display screen. Perform adjustment functions.
  • the display screen further includes a first base substrate, a second base substrate, and a plurality of light-emitting elements.
  • the plurality of light-emitting elements are arranged between the first base substrate and the second base substrate.
  • the above-mentioned light emitting element may be an OLED or a micro LED, in this case, the display screen may be a self-luminous display screen.
  • the display screen further includes a first base substrate, a second base substrate, and a liquid crystal layer.
  • the liquid crystal layer is arranged between the first base substrate and the second base substrate.
  • the above-mentioned display is a liquid crystal display.
  • the light sensor is arranged on a side of the first base substrate close to the second base substrate.
  • the light sensor is arranged on a side of the second base substrate away from the first base substrate.
  • the first base substrate may be a substrate on which a pixel driving circuit is formed.
  • the second base substrate may be an encapsulation layer or an encapsulation board.
  • the first base substrate may be a packaging layer or a packaging board.
  • the second base substrate may be a substrate on which a pixel driving circuit is formed.
  • the at least one light sensor includes a proximity light sensor, and the proximity light sensor includes a transmitter and a receiver.
  • the emitter is used to emit light to the display side of the display screen, and the light to be emitted is used to be incident on the measured object located on the display side of the display screen.
  • the receiver is used to receive the reflected light reflected by the measured object.
  • the transmitter is arranged on the side of the first base substrate close to the second base substrate, and the receiver is arranged on the side of the second base substrate away from the first base substrate.
  • the transmitter is arranged on a side of the second base substrate away from the first base substrate, and the receiver is arranged on a side of the first base substrate close to the second base substrate.
  • the transmitter and the receiver are arranged on different substrates, which can avoid the mutual interference of the optical paths of the transmitter and the receiver.
  • the display screen when the display screen includes a light-emitting element, the display screen further includes a pixel defining layer.
  • the pixel defining layer is disposed on the first base substrate and includes a plurality of pixel partition walls.
  • a plurality of pixel partition walls are arranged horizontally and vertically to form a plurality of openings.
  • a light emitting element is located in an opening.
  • the vertical projection of the light sensor on the first base substrate is within the range of the vertical projection of the pixel partition wall on the first base substrate, thereby avoiding the interference of the light sensor on the light path of the pixel.
  • the light sensor is arranged on a side of the pixel defining layer away from the first base substrate.
  • the vertical projection of the light sensor on the first base substrate can be conveniently located within the range of the vertical projection of the pixel partition wall on the first base substrate, thereby avoiding the interference of the light sensor on the light path of the pixel.
  • the display screen also includes a black matrix.
  • the black matrix is located on the side of the second base substrate close to the first base substrate.
  • the vertical projection of the light sensor on the second base substrate is within the range of the vertical projection of the black matrix on the second base substrate, thereby avoiding the interference of the light sensor on the light path of the pixel.
  • the display screen further includes a touch control layer.
  • the touch control layer is disposed on a side of the second base substrate away from the first base substrate.
  • the light sensor is arranged on the side of the touch layer away from the first base substrate. In the case that the light sensor is located between the effective display areas of two adjacent sub-pixels, the interference of the light sensor on the light path of the pixel can be avoided.
  • the display screen also includes an upper polarizer.
  • the upper polarizer is arranged on the side of the second base substrate away from the first base substrate; the light sensor is arranged on the surface of the upper polarizer away from the first base substrate. In the case that the light sensor is located between the effective display areas of two adjacent sub-pixels, the interference of the light sensor on the light path of the pixel can be avoided.
  • the display screen also includes a cover.
  • the cover plate is arranged on the side of the second base substrate away from the first base substrate; the light sensor is arranged on the side surface of the cover plate away from the first base substrate.
  • the light sensor is located between the effective display areas of two adjacent sub-pixels, the interference of the light sensor on the light path of the pixel can be avoided.
  • the display screen further includes a strobe signal line and a read signal line that cross horizontally and vertically.
  • the first photosensitive element includes a photosensitive triode.
  • the gate of the phototransistor is coupled with the first pole of the first switch transistor, the first pole of the phototransistor is coupled with the read signal line, and the second pole of the phototransistor is coupled with the first voltage terminal.
  • the gate of the first switch transistor is coupled to the gate signal line, and the second pole of the first switch transistor is coupled to the second voltage terminal. In this way, when the gate of the first switching transistor is loaded with a high voltage, the first switching transistor is turned on.
  • the gate of the phototransistor is loaded with a high voltage, and the phototransistor is turned on, thereby performing light incident on the display screen.
  • the photoelectric conversion is performed and an electric signal is generated.
  • the light sensor outputs the electric signal when the first switch transistor is in the conducting state, so that the brightness of the display screen can be adjusted according to the read electric signal.
  • the display screen further includes a strobe signal line and a read signal line that cross horizontally and vertically.
  • the first photosensitive element includes a photosensitive diode or a photosensitive resistor. The first end of the first photosensitive element is coupled with the first pole of the first switch transistor, and the second end of the first photosensitive element is coupled with the read signal line.
  • the gate of the first switch transistor is coupled to the gate signal line, and the second pole of the first switch transistor is coupled to the first voltage terminal.
  • the first switching transistor is turned on, and the photoresistor can photoelectrically convert the light incident on the display screen and generate an electrical signal.
  • the light sensor is connected to the first switching transistor. When in the on state, an electrical signal is output, so that the brightness of the display screen can be adjusted according to the read electrical signal.
  • the light sensor further includes a resistor.
  • the first end of the resistor is coupled to the read signal line, and the second end of the resistor is coupled to the third voltage end.
  • the voltage at the first voltage terminal is greater than the voltage at the third voltage terminal.
  • an electric field can be formed between the first voltage terminal and the third voltage terminal.
  • the first photosensitive element photoelectrically converts the light incident on the display screen. Changes in the impedance of the photosensitive element. In this way, the impedance change is transmitted to the reading signal line, and the brightness of the display screen is adjusted according to the acquired impedance change.
  • the display screen further includes a first filter layer.
  • the first filter layer is arranged on the side where the light incident surface of the first photosensitive element is located, and covers the light incident surface of the first photosensitive element.
  • the first filter layer is used to filter the light incident on the display screen.
  • the filter layer includes a laminated silicon oxide layer and a titanium oxide layer. Based on this, by adjusting the number and refractive index of the silicon oxide layer and the titanium oxide layer in the first filter layer, the non-responsive wavelength band of the first photosensitive element can be filtered out by using the first filter layer.
  • the display screen further includes a first light blocking structure.
  • the first light blocking structure is arranged on the side where the light incident surface of the first photosensitive element is located, and is arranged around a circumference of the first photosensitive element, so that the light emitted by the display screen itself can be blocked, and the interference to the collection result of the light sensor can be avoided.
  • the light incident surface of the first photosensitive element is circular.
  • the angle ⁇ 1 is the angle between the incident light and the normal of the light incident surface of the first photosensitive element; the angle ⁇ 1 is in the range of 5°-30°. Based on this, the incident range of the incident light is reduced, and the non-detection light is prevented from entering, so that the detection result can be more accurate.
  • the first switching transistor is a top-gate transistor.
  • the display screen also includes a first light-shielding layer.
  • the first light-shielding layer is located on the side of the gate of the first switching transistor away from the active layer of the first switching transistor, and the first light-shielding layer covers the gate of the first switching transistor, thereby preventing external light from affecting the active layer of the switching transistor Destruction.
  • the transmitter includes an emission control circuit and a light-emitting element connected to the emission control circuit.
  • the emission control circuit is used to receive the electrical signal sent by the peripheral circuit, and trigger the light-emitting element according to the electrical signal, so that the light-emitting element emits outgoing light, and the outgoing light is infrared light.
  • the light waves emitted by the emitter can be distinguished from the light waves emitted by the light-emitting elements of the display screen.
  • the display screen further includes a second light blocking structure.
  • the second light-blocking structure is arranged on the side where the light-emitting surface of the light-emitting element is located, and is arranged around a circle of the light-emitting element.
  • the receiver includes a second photosensitive element and a second switching transistor.
  • the second photosensitive element is used to receive the reflected light reflected by the measured object, and perform photoelectric conversion to generate an electrical signal.
  • the second switch transistor is coupled to the second photosensitive element, and the second switch transistor is used for outputting the electrical signal generated by the second photosensitive element when it is in a conducting state.
  • the brightness of the display screen can be adjusted according to the obtained electrical signal, and the function of adjusting the brightness of the display screen according to the distance between the measured object and the display screen is realized.
  • the receiver further includes a second filter layer.
  • the second filter layer is disposed on the light incident surface of the second photosensitive element; the second filter layer is used to filter the light incident on the second photosensitive element.
  • the second filter layer includes a silicon oxide layer and a titanium oxide layer that are stacked. Based on this, by adjusting the number and refractive index of the silicon oxide layer and the titanium oxide layer in the second filter layer, the non-responsive wavelength band of the first photosensitive element can be filtered out by using the second filter layer.
  • the display screen further includes a third light blocking structure.
  • the third light blocking structure is arranged on the side where the light incident surface of the second photosensitive element is located, and is arranged around a circumference of the second photosensitive element.
  • an electronic device including any one of the above-mentioned display screens.
  • the electronic device adopts the above-mentioned display screen to increase the screen-to-body ratio.
  • the at least one light sensor includes an ambient light sensor.
  • the electronic device also includes a processor, and the processor is coupled to the ambient light sensor.
  • the processor is used to adjust the brightness of the display screen according to the electrical signal output by the ambient light sensor.
  • the processor can adjust the brightness of the display screen according to the acquired electrical signal, and realize the function of adjusting the brightness of the display screen according to the brightness of the ambient light.
  • the at least one light sensor includes a proximity light sensor, and the proximity light sensor includes a transmitter and a receiver.
  • the emitter is used to emit light to the display side of the display screen, and the light to be emitted is used to be incident on the measured object located on the display side of the display screen.
  • the receiver is used to receive the reflected light reflected by the measured object.
  • the electronic device also includes a processor, which is coupled to the transmitter and receiver; the processor is used to calculate the distance between the electronic device and the measured object according to the emitted light emitted by the transmitter and the reflected light received by the receiver, and according to The distance between the electronic device and the measured object adjusts the brightness of the display.
  • the processor adjusts the brightness of the display screen according to the distance between the measured object and the display screen.
  • FIG. 1a is a schematic structural diagram of an electronic device provided by an embodiment of this application.
  • FIG. 1b is a schematic structural diagram of a display screen provided by an embodiment of the application.
  • FIG. 1c is a schematic structural diagram of another display screen provided by an embodiment of the application.
  • FIG. 1d is a schematic structural diagram of another display screen provided by an embodiment of the application.
  • FIG. 2a is a schematic structural diagram of another electronic device provided by an embodiment of this application.
  • FIG. 2b is a schematic diagram of an arrangement position of an ambient light sensor according to an embodiment of the application.
  • 3a is a circuit diagram of a photosensitive control circuit provided by an embodiment of the application.
  • 3b is a circuit diagram of another photosensitive control circuit provided by an embodiment of the application.
  • Figure 3c is a cross-sectional view taken along the dashed line E-E in Figure 1b;
  • Fig. 3d is a schematic diagram of a partial structure of the W area in Fig. 3c;
  • FIG. 3e is a schematic structural diagram of the first light blocking structure in FIG. 3d;
  • 4a is a schematic structural diagram of another electronic device provided by an embodiment of the application.
  • FIG. 4b is a schematic structural diagram of another electronic device provided by an embodiment of this application.
  • Figure 4c is a schematic structural diagram of an electronic device provided by a related technical solution
  • Figure 4d is a cross-sectional view taken along the dashed line A-A in Figure 4c;
  • 4e is a schematic cross-sectional structure diagram of an electronic device provided by an embodiment of the application.
  • FIG. 5a is a schematic diagram of another partial structure of a display screen provided by an embodiment of the application.
  • FIG. 5b is a schematic diagram of another partial structure of a display screen provided by an embodiment of the application.
  • FIG. 5c is a schematic diagram of another partial structure of a display screen provided by an embodiment of the application.
  • Fig. 6a is a circuit diagram of another photosensitive control circuit provided by an embodiment of the application.
  • Figure 6b is another cross-sectional view taken along the dashed line E-E in Figure 1b;
  • FIG. 7 is a circuit diagram of another light sensor provided by an embodiment of the application.
  • Fig. 8a is a schematic structural diagram of another display screen provided by an embodiment of the application.
  • Figure 8b is a cross-sectional view taken along the dashed line O-O in Figure 8a;
  • Figure 8c is another cross-sectional view taken along the dashed line O-O in Figure 8a;
  • FIG. 8d is a schematic structural diagram of another display screen provided by an embodiment of the application.
  • FIG. 8e is a schematic structural diagram of another display screen provided by an embodiment of the application.
  • FIG. 9 is a schematic structural diagram of another display screen provided by an embodiment of the application.
  • 10a is a schematic structural diagram of another display screen provided by an embodiment of the application.
  • Figure 10b is a cross-sectional view taken along the dashed line F-F in Figure 10a;
  • 10c is a schematic structural diagram of another display screen provided by an embodiment of the application.
  • 10d is a schematic structural diagram of another display screen provided by an embodiment of the application.
  • FIG. 11a is a schematic structural diagram of another display screen provided by an embodiment of the application.
  • FIG. 11b is a schematic structural diagram of another display screen provided by an embodiment of the application.
  • FIG. 11c is a schematic structural diagram of another display screen provided by an embodiment of the application.
  • FIG. 12 is a schematic structural diagram of a display screen with a proximity light sensor according to an embodiment of the application.
  • FIG. 13 is a schematic structural diagram of a transmitter close to a light sensor according to an embodiment of the application.
  • FIG. 14a is a schematic diagram of a partial structure of a transmitter provided by an embodiment of the application.
  • 14b is a schematic diagram of a partial structure of another transmitter provided by an embodiment of the application.
  • 15 is a schematic structural diagram of a receiver close to a light sensor according to an embodiment of the application.
  • FIG. 16a is a schematic diagram of a partial structure of a receiver provided by an embodiment of the application.
  • FIG. 16b is a schematic diagram of a partial structure of a receiver provided by an embodiment of the application.
  • FIG. 17 is a schematic structural diagram of another display screen provided by an embodiment of the application.
  • FIG. 18 is a schematic structural diagram of another display screen provided by an embodiment of the application.
  • FIG. 19 is a schematic structural diagram of another display screen provided by an embodiment of the application.
  • azimuthal terms such as “upper” and “lower” may include but are not limited to the directions defined relative to the schematic placement of the components in the drawings. It should be understood that these directional terms may be relative concepts. They are used for relative description and clarification, which can be changed according to the changes in the orientation of the parts in the drawings.
  • connection should be understood in a broad sense.
  • “connected” can be a fixed connection, a detachable connection, or a whole; it can be a direct connection, or Can be indirectly connected through an intermediary.
  • the term “coupling” may be an electrical connection method for signal transmission.
  • “Coupling” can be a direct electrical connection or an indirect electrical connection through an intermediary.
  • the embodiment of the present application provides an electronic device.
  • the electronic equipment includes mobile phones, tablets, computers, TVs, smart wearable products (for example, smart watches, smart bracelets), virtual reality (VR) terminal devices, augmented reality (augmented reality) AR) and other electronic products with display functions.
  • smart wearable products for example, smart watches, smart bracelets
  • VR virtual reality
  • augmented reality augmented reality
  • the embodiments of the present application do not impose special restrictions on the specific form of the above-mentioned electronic device.
  • the following takes the electronic device 01 as a mobile phone as shown in FIG. 1a as an example.
  • the above-mentioned electronic device 01 mainly includes a display module 10, a middle frame 11, and a rear casing 12.
  • the middle frame 11 is located between the display module 10 and the rear shell 12.
  • the display module 10 and the rear shell 12 are respectively connected to the middle frame 11.
  • the accommodating cavity formed between the rear shell 12 and the middle frame 11 is used to accommodate batteries, cameras (not shown in Figure 1a), and electronic components such as printed circuit boards (PCBs) as shown in Figure 1a.
  • PCBs printed circuit boards
  • the display screen 101 has a display area 1001 for displaying images as shown in FIG. 2a, and a frame area 1002 located at the periphery of the display area 1001.
  • the frame area 1002 is provided with a driving circuit for driving the display screen 101 for screen display, such as a source driving circuit, a gate driving circuit, and the like.
  • the display module 10 is used to display images, and includes a display screen 101 as shown in FIG. 1 b, and the display screen 101 has a plurality of pixel units 202.
  • the pixel arrangement may be as shown in FIG. 1b.
  • a pixel unit 202 includes a red (red, R) color sub-pixel 105R, a green (green, G) color sub-pixel 105G, and a blue color sub-pixel 105G. (blue, B) color sub-pixel 105B.
  • the red sub-pixel 105R and the green sub-pixel 105G are located in the same row along the X direction, and the blue sub-pixel 105B is located in another row, and the red sub-pixel 105R is located in the same column along the Y-axis direction.
  • the right side of the blue sub-pixel 105B and the bottom of the green sub-pixel 105G need not be provided with sub-pixels. As a result, there is a certain gap between two adjacent green sub-pixels 105G located in the same column along the Y direction.
  • FIG. 1b is an example in which the red sub-pixel 105R and the green sub-pixel 105G in the same pixel unit 202 are located in the same row along the X-axis direction, and the blue sub-pixel 105B is located in the next row.
  • the red sub-pixel 105R and the blue sub-pixel 105B in the same pixel unit 202 may be located in the same row along the X-axis direction, and the green sub-pixel 105G may be located in the next row, or the green sub-pixel 105G and the blue sub-pixel 105G may be located in the same row.
  • Color sub-pixel 105B may be located in the same row along the X-axis direction.
  • the red sub-pixel 105R is located in the next row in three combinations.
  • the pixel arrangement of the display screen 101 can also be as shown in FIG. 1c, and the red sub-pixel 105R, green sub-pixel 105G, and blue sub-pixel 105B in the same pixel unit 202 can be The X-axis direction is arranged in the same row in sequence. It should be noted that the arrangement of the sub-pixels 105 of the three primary colors of red, green, and blue may be determined according to requirements, and this application does not limit this.
  • the arrangement of the sub-pixels 105 of the above-mentioned display screen 101 can also be a Pentile pixel arrangement with unequal areas of red sub-pixels, blue sub-pixels, and green sub-pixels (also called P arrangement), RGB-Delta pixel arrangement. Way (can also be called D arrangement) and so on.
  • any sub-pixel 105 has an active display area (AA) and an inactive display area 106 located around the AA area.
  • the AA area of the aforementioned sub-pixel 105 is the area of the sub-pixel 105 that is actually used to display an image.
  • the non-effective display area 106 between the AA areas of any two adjacent sub-pixels 105 is not used for displaying images.
  • the electronic device 01 may also include at least one light sensor 13 as shown in FIG. 2a (FIG. 2b takes one light sensor 13 as an example).
  • FIG. 2b takes one light sensor 13 as an example.
  • the functions of the multiple light sensors 13 may not be completely the same.
  • the brightness of the display screen 101 when the display screen 101 is used in a dark environment, the brightness of the display screen 101 may be too strong, which may easily cause fatigue, and when the sun is relatively sunny outdoors, the brightness of the display screen 101 may be too strong. If it is too low, the screen can’t be seen clearly and it is difficult for the application.
  • the electronic device 01 provided by the embodiment of the present application also has a function of being able to adjust the brightness of the display screen 101 according to light.
  • the aforementioned at least one light sensor 13 may include an ambient light sensor 13a.
  • the ambient light sensor 13a may include at least one photosensitive pixel 220 as shown in FIG. 2b, and the ambient light sensor 13a may be referred to as a photosensitive unit.
  • FIG. 2b is an example in which the ambient light sensor 13a includes a plurality of photosensitive pixels 220, and any one of the aforementioned photosensitive pixels 220 is provided with a photosensitive control circuit 201.
  • the light-sensing control circuits 201 in the ambient light sensor 13a may be arranged at intervals.
  • the photosensitive control circuit 201 of the ambient light sensor 13a may be located in the non-effective display area 106 between the effective display areas AA of two adjacent sub-pixels 105 (for example, as shown in FIG. 1b and FIG. 1c). s position).
  • the light-sensing control circuit 201 of the ambient light sensor 13a may be located in the ineffective display area 106 between two adjacent pixel units 202.
  • each light-sensing control circuit 201 of the ambient light sensor includes a first switch transistor Tc1 and a first photosensitive element (for example, the phototransistor BG shown in FIG. 3a) coupled with the switch transistor Tc1.
  • the first switching transistor Tc1 may be a thin film transistor (TFT) or a MOS transistor.
  • TFT thin film transistor
  • MOS transistor MOS transistor
  • any TFT may include a gate (gate, g), an active layer (AL), and a first electrode, such as a source (source, s) and a second electrode.
  • the pole for example, is the drain (drain, d).
  • the first electrode of the transistor may be the drain d
  • the second electrode may be the source s. This application does not limit this. For the convenience of illustration, the following descriptions are made by taking the first electrode drain d and the second electrode source s of the transistor as examples.
  • the first switching transistor Tc1 when the first switching transistor Tc1 is a TFT, the first switching transistor Tc1 may be a top-gate transistor or a bottom-gate transistor. When it is a top-gate transistor, the gate g of the first switching transistor Tc1 is opposite to the The source layer AL is further away from the substrate. In this case, in order to prevent the active layer 314 of the first switching transistor Tc1 from being damaged by external light, the display screen 101 may further include a first light-shielding layer 303a as shown in FIG. The gate g of a switching transistor Tc1 is away from the side of the active layer AL of the switching transistor Tc, and the first light shielding layer 303a covers the gate g of the first switching transistor Tc1.
  • the gate g of the first switching transistor Tc1 is closer to the substrate with respect to the active layer AL. This application does not limit this. For the convenience of example description, the following descriptions are made by taking the first switching transistor Tc1 as a top-gate transistor as an example.
  • the first photosensitive element may be a photosensitive transistor BG.
  • the structure of the phototransistor BG is similar to that of the first switching transistor Tc1, which can be a TFT or a MOS transistor.
  • the phototransistor BG can be a top-gate or bottom-gate transistor.
  • the difference between the phototransistor BG and the first switching transistor Tc1 is that a photodiode is connected to the active layer of the phototransistor BG.
  • the above-mentioned coupling of the first switching transistor Tc1 and the first photosensitive element means that the gate g of the photosensitive transistor BG is coupled to the first pole of the first switching transistor Tc1.
  • the display screen 101 may further include a gate signal line GL and a read signal line RL that cross horizontally and vertically as shown in FIG. 2b.
  • the first electrode of the photosensitive transistor BG for example, the drain (drain, d) of the photosensitive transistor BG in FIG. 3a is coupled to the read signal line RL, and the gate (gate, g) of the first switching transistor Tc1 is connected to The gate signal line GL is coupled.
  • the second pole of the phototransistor BG is coupled to the first voltage terminal V1, and the second pole of the first switching transistor Tc1, such as the source (source, s) of the phototransistor BG and the second voltage terminal V2 in FIG. 3a Phase coupling.
  • the input signal of GL can control the conduction of the first switch transistor Tc1.
  • the first switch transistor Tc1 is turned on.
  • the voltage of V2 can be applied to the phototransistor BG.
  • the grid g turns on the phototransistor BG.
  • the voltages of V1 and V2 may be different. At this time, V1 can be greater than V2, and V1 can also be less than V2, as long as it can turn on the first switching transistor Tc1 and the phototransistor BG. Alternatively, in some other embodiments of the present application, as shown in FIG. 3b, the voltages of the above-mentioned V1 and V2 may be the same. At this time, the first pole of the first switch transistor Tc1 and the phototransistor BG can be connected to the same voltage terminal V1.
  • the photosensitive control circuit 201 of the ambient light sensor may further include a resistor R, wherein the first end C of the resistor R is coupled to the read signal line RL, and the resistance R
  • the second terminal D is coupled to the third voltage terminal V3.
  • the voltage of the first voltage terminal V1 is greater than the voltage of the third voltage terminal V3.
  • the third voltage terminal V3 may be grounded.
  • an electric field can be formed between the first voltage terminal V1 and the third voltage terminal V3.
  • a current can be formed between the charges accumulated at both ends of the active layer 308 of the phototransistor BG (as shown in FIG. 3c, the direction of the current is the direction of positive charge to negative charge), and output from the RL terminal electric signal.
  • a certain frequency may be, for example, 20 Hz, or set according to requirements, so as to meet the requirements of accuracy and power consumption.
  • the impedance change of the phototransistor BG can be obtained by testing the voltage across the resistor R.
  • the CPU can adjust the brightness of the display screen 101 according to the acquired impedance change. For example, by adjusting the duty cycle in pulse width modulation (PWM), when the brightness needs to be increased, the value of the duty cycle can be reduced, and when the brightness needs to be reduced, the value of the duty cycle can be increased. Since this is the prior art of those skilled in the art, it will not be repeated here.
  • PWM pulse width modulation
  • the gate g of the first switching transistor Tc1 is set to zero bias. At this time, the first switching transistor Tc1 is turned off, and V1 and V2 are set to positive bias. It should be noted that V1 here can also be set to a negative bias voltage, or set according to requirements, which is not limited in this application. And V2 is used to turn on the phototransistor BG when the switching transistor Tc is turned on.
  • the gate signal line GL receives the gate signal and applies a high voltage to the gate g of the first switching transistor Tc1 (taking the first switching transistor Tc1 as an N-type transistor), so that the first switching transistor Tc1 is turned on and photosensitive
  • the transistor BG provides a high voltage to the phototransistor BG to turn on the phototransistor BG, and then read the voltage across the resistor R at the RL end as a reference voltage.
  • the display screen 101 may further include a first filter layer 305.
  • the first filter layer 305 is disposed on the side where the light incident surface of the photosensitive transistor BG is located and covers the light incident surface of the photosensitive transistor BG.
  • the first filter layer 305 is used to filter the light incident on the display screen 101, In this way, the non-response band of the first phototransistor BG is filtered out, and the accuracy of the light signal collection of the photosensitive control circuit 201 is improved.
  • FIG. 3d the enlarged view corresponding to the part W in FIG.
  • the first filter layer 305 may include a laminated silicon oxide (SiOx) layer 317 and a titanium oxide (TiOx) layer 318 (only the oxide An example of a stacking method of the silicon (SiOx) layer 317 and titanium oxide (TiOx) 318), the filter layer 305 can be adjusted by adjusting the number and refractive index of the silicon oxide (SiOx) layer 317 and titanium oxide (TiOx) 318 Filtered light band.
  • SiOx silicon oxide
  • TiOx titanium oxide
  • the number and refractive index of the silicon oxide (SiOx) 317 layer and the titanium oxide (TiOx) 318 layer can be adjusted to make
  • the first filter layer 305 can filter out light in the infrared band.
  • this application does not limit the number of layers, stacking methods and refractive index of SiOx and TiOx. Those skilled in the art can use experiments, tests, simulations and other methods to determine the number of layers, stacking methods and refractive index of SiOx and TiOx. Set it as long as it can filter the non-response band according to the light wavelength requirement of the phototransistor BG.
  • each photosensitive control circuit 201 of the ambient light sensor is located in the non-display area 106 between two adjacent AA areas.
  • the AA area can display images from the above.
  • the display screen 101 may further include a first light blocking structure 304 as shown in FIG. It can be set as a circle (as shown in FIG. 3e), so as to block the light of the sub-pixel 105 from entering the photosensitive transistor BG.
  • the light incident surface of the phototransistor BG may be circular as shown in FIG. 3e.
  • the angle ⁇ 1 is the angle between the incident light and the normal line of the light incident surface of the first photosensitive element, such as the photosensitive transistor BG.
  • the aforementioned angle ⁇ 1 may be 5°, 10°, 15°, 20°, or 30°.
  • the bang area 100 is provided in the electronic device 01 (the bang area 100 refers to a groove dug in the display area of the display screen 101 for setting Setting other electronic components (for example, camera, home button, etc.) to set an ambient light sensor 13a with higher accuracy.
  • the ambient light sensor 13a includes eight light-sensing control circuits 201 as shown in FIG. 4b, and four light-sensing control circuits 201 may be provided on both sides of the display screen 101.
  • Each light-sensing control circuit 201 in the ambient light sensor 13a can not only test the light intensity, adjust the brightness of the display screen 101, but also detect the position of the hand shielding, so as to determine the operation performed by the hand.
  • the application does not limit the setting position of the photosensitive control circuit 201, and can be set according to requirements.
  • the display screen 101 may include a plurality of photosensitive control circuits 201 and a plurality of sub-pixels arranged in the display area, wherein the sub-pixels have an effective display area.
  • the above-mentioned plurality of light-sensing control circuits 201 may constitute an ambient light sensor 13a for detecting ambient light.
  • the photosensitive control circuit 201 of the ambient light sensor includes a first switch transistor Tc1 and a first photosensitive element coupled to the first switch transistor Tc1.
  • the photosensitive control circuit 201 of the ambient light sensor is located in two adjacent ones. Between the effective display areas of sub-pixels.
  • the first photosensitive element is used to photoelectrically convert the light incident on the display screen 101 and generate an electrical signal
  • the first switching transistor Tc1 is used to output the electrical signal generated by the first photosensitive element when it is in the on state.
  • the brightness of the display screen is adjusted according to the obtained electrical signal, and the function of adjusting the brightness of the device according to the brightness of the light is realized.
  • the ambient light sensor 13a is disposed in the notch area 100 of the electronic device 01, so as shown in FIG. 4d (a cross-sectional view cut along AA in FIG. 4c), Below the cover 503 of the electronic device 01, because the ambient light sensor 13a is provided at the location of the bangs area 100 described above, the sub-pixels 105 cannot be set in the bangs area 100, resulting in a decrease in the screen-to-body ratio of the screen.
  • the solution of the present application is shown in FIG.
  • the light-sensing control circuit 201 of the ambient light sensor is arranged in the ineffective display area 106 between two adjacent sub-pixels 105, so the area under the cover plate 503 where the sub-pixels 105 can be arranged can be increased, so it can be reduced Or remove the notch area of the display screen 101, thereby increasing the screen-to-body ratio of the electronic device 01.
  • the manufacturing process of the photosensitive control circuit 201 of the ambient light sensor in the display screen 101 is described below by taking FIG. 3b as an example.
  • the buffer layer 311 is formed by a chemical vapor deposition (CVD) method, and then, a physical vapor deposition (PVD) method is used.
  • CVD chemical vapor deposition
  • PVD physical vapor deposition
  • a gate insulating layer 312 is formed using a CVD process.
  • the gate insulating layer 312 covers the active layer 314 of the first switching transistor Tc1.
  • the PVD process is used on the surface of the gate insulating layer 312 away from the first base substrate 125 to form the first gate 302 of Tc1 and the second gate 307 of BG at the same time.
  • a CVD process is used to form an intermediate layer 313 covering the first gate 302 and the second gate 307.
  • a first groove 320 and a second groove 321 are formed at both ends of the active layer 314 of the first switching transistor Tc1 by a dry etching process, and a third groove 322 is formed at one end of the second gate 307 .
  • the first groove 320 and the second groove 321 penetrate the intermediate layer 313 and the gate insulating layer 312 to the active layer 314 of the first switching transistor Tc1.
  • the third groove 322 penetrates the intermediate layer 313 to the second gate 307.
  • a source s and a drain d are formed on both ends of the active layer 314 of the first switching transistor Tc1 through the PVD process, respectively.
  • the source s and drain d of the phototransistor BG are the same layer and the same material as the source s and drain d of the first switching transistor Tc1, when fabricating the source s and drain d of the first switching transistor Tc1, The same mask can be used to make the source s and drain d of the photosensitive transistor BG at the same time.
  • the drain d of the first switching transistor Tc1 is insulated from the source s of the phototransistor BG.
  • the materials constituting the source s and drain d of the phototransistor BG and the source s and drain d of the first switching transistor Tc1 may be metal materials such as copper (Cu), aluminum (Al), and gold (Au).
  • “same layer” refers to the use of the same film forming process (for example, coating process) to form a film layer for forming a specific pattern, and then use the same mask to pass the pattern once The layer structure formed by the process.
  • the same patterning process may include multiple exposure, development or etching processes, and the specific patterns in the formed layer structure may be continuous or discontinuous, and these specific patterns may also be at different heights. Or have different thicknesses.
  • a first light shielding layer 303a is formed between the source s and drain d of the first switching transistor Tc1, and the first light shielding layer 303a is connected to the source s and drain d of the first switching transistor Tc1, wherein,
  • the material constituting the first light-shielding layer 303a can be a black light-absorbing material (for example, black photoresist) or a metal with an insulating coating on the surface (for example, aluminum (Al), titanium (Ti), etc.), which can be photolithography or metal sputtering, respectively Method of preparation.
  • the active layer 308 of the phototransistor BG is formed between the source s and the drain d of the phototransistor BG, so that the active layer 308 of the phototransistor BG is connected to the source s and drain d of the phototransistor BG, respectively.
  • the material constituting the active layer 308 of the phototransistor BG can be a semiconductor material, such as polysilicon, amorphous silicon, etc., can be prepared by a CVD process, or can be an organic semiconductor material, such as pentacene, isopropylsilyl alkynyl Pentacene, etc., can be prepared by photolithography and coating methods.
  • a first filter layer 305 is formed to filter out the non-response band of the phototransistor BG.
  • the first filter layer 305 is covered with the passivation layer 310, and then the fourth groove 323 and the fifth groove 324 are formed in the passivation layer 310 by a dry etching process, wherein the fourth groove 323 and the second groove 324 are The five grooves 324 penetrate the passivation layer 310.
  • a first light blocking structure 304 is formed in the fourth groove 323 and the fifth groove 324, wherein the material constituting the first light blocking structure 304 may be a black light-absorbing material (for example, black photoresist) or a surface plating insulating layer.
  • the metal such as aluminum (Al), titanium (Ti), etc.
  • the photosensitive element in the photosensitive control circuit 201 of the ambient light sensor may be a photosensitive diode VD.
  • the first terminal A of the photodiode VD is coupled to the first pole of the first switching transistor Tc1, and the second terminal B of the photodiode VD is coupled to the read signal line RL.
  • the first The gate of the switching transistor Tc1 is coupled to the gate signal line GL, and the second pole of the first switching transistor Tc1 is coupled to the first voltage terminal V1.
  • the photosensitive control circuit 201 of the ambient light sensor may further include a resistor R.
  • the photosensitive element is a phototransistor BG.
  • a high voltage needs to be applied to the first gate 302 to make the first switching transistor Tc1
  • the phototransistor BG provides a high voltage to the second gate 307 to turn on the phototransistor BG, that is, the phototransistor BG is turned on after the first switching transistor Tc1 is turned on
  • the phototransistor BG has the function of amplifying current.
  • the photodiode VD is originally turned on, the first gate 302 only serves to turn on the first switching transistor Tc1, and the photodiode VD does not have the function of amplifying current.
  • the other processes are the same as described above, here No longer.
  • 6b is a cross-sectional view of the display screen 101 with the above-mentioned photodiode VD obtained by cutting along the dashed line EE in FIG. Connected, the first pole of the first switching transistor Tc1 is connected to the A terminal of the photodiode VD.
  • Other setting methods are the same as above, so I won't repeat them here.
  • the difference between the process of preparing the above-mentioned photosensitive control circuit 201 of the ambient light sensor and the preparation process of the solution when the photosensitive element is a phototransistor BG is that the third groove 322 is not formed at one end of the second grid 307 in this example. And the first pole of the first switch transistor Tc1 is connected to the A terminal of the photodiode VD.
  • the other processes are the same as above, so I won't repeat them here.
  • the second grid 307 does not work, just to be consistent with the above solution when the photosensitive element is a phototransistor BG. In this way, the same mask can be used in this example and the above solution. Templates, so as to facilitate the simultaneous production of the above two types of products, simplifying the process. In addition, there may be no second gate 307 in this example.
  • the photosensitive element in the photosensitive control circuit 201 of the ambient light sensor may be a photosensitive resistor RG.
  • the first terminal I of the photoresistor RG is coupled to the first pole of the first switching transistor Tc1
  • the second terminal G of the photoresistor RG is coupled to the read signal line RL.
  • the first terminal I of the photoresistor RG is coupled to the read signal line RL.
  • the gate of the switching transistor Tc1 is coupled to the gate signal line GL
  • the second pole of the first switching transistor Tc1 is coupled to the first voltage terminal V1.
  • the photosensitive control circuit 201 of the ambient light sensor may further include a resistor R.
  • the working principle is the same as the solution when the photosensitive element is a photosensitive diode VD, and will not be repeated here.
  • the cross-sectional view of the photosensitive control circuit 201 with the photoresistor RG obtained by cutting along the dotted line EE in FIG. 1b is the same as that of FIG. 6b, except that the photodiode VD in FIG. .
  • the display screen 101 is a display screen 101 capable of self-luminous.
  • the above-mentioned self-luminous display screen 101 may have a plurality of sub-pixels 105 arranged in an array.
  • the above-mentioned display screen 101 includes a pixel circuit 104 and a light-emitting element 2021 located in the sub-pixel 105.
  • the pixel circuit 104 drives the light-emitting element 2021 to emit light, so that each sub-pixel 105 in the display screen 101 can display according to a preset gray scale.
  • the above-mentioned light emitting element 2021 may be an organic light emitting diode (OLED). Or, in other embodiments of the present application, the light emitting element 2021 may be a miniature light emitting diode (LED), such as a micro LED or a mini LED.
  • OLED organic light emitting diode
  • LED miniature light emitting diode
  • the present application does not limit the type of the light-emitting element 2021, as long as the light-emitting element 2021 can emit light under the driving of the pixel circuit 104. For the convenience of description, the following examples are all exemplified by taking the light-emitting element 2021 as an OLED.
  • the display screen 101 may also include a first base substrate 125 and a second base substrate 127 as shown in FIG. 8b (a cross-sectional view cut along the dashed line O-O in FIG. 8a).
  • the above-mentioned light-emitting element 2021 is disposed between the first base substrate 125 and the second base substrate 127.
  • the first base substrate 125 is used to carry the above-mentioned light-emitting element 2021
  • the second base substrate 127 is used to prevent water and oxygen in the air from entering the light-emitting element 2021 and adversely affect the light-emitting element 2021.
  • the above-mentioned light sensor 13 may be disposed on the side of the first base substrate 125 close to the second base substrate 127.
  • the light sensor 13 may be disposed on a side of the second base substrate 127 away from the first base substrate 125.
  • the light-sensing control circuit 201 of the ambient light sensor may be disposed on the side of the second base substrate 127 away from the first base substrate 125. The following description will give a detailed example of the arrangement of the light-sensing control circuit 201 of the ambient light sensor.
  • the above-mentioned display screen 101 may be a flexible display screen.
  • the material constituting the first base substrate 125 may be a flexible material, such as an organic material.
  • the above-mentioned second base substrate 127 may be an encapsulation layer, and the encapsulation layer includes a multilayer organic thin film encapsulation layer used as a flexible substrate, and a multilayer inorganic thin film encapsulation layer used to block water and oxygen.
  • the organic thin film encapsulation layer and the inorganic thin film encapsulation layer are arranged crosswise, and a thin film of the encapsulation layer close to the air and close to the light-emitting element 2021 is an inorganic thin film encapsulation layer.
  • the materials constituting the first base substrate 125 and the second base substrate 127 may both be hard transparent materials.
  • the above-mentioned second base substrate 127 may be a package cover plate.
  • the display screen 101 may further include a pixel definition layer (PDL) 126 disposed on the first base substrate 125 as shown in FIG. 8c.
  • the above-mentioned pixel defining layer 126 may include a plurality of pixel dividing walls 116, which are arranged horizontally and vertically to form a plurality of openings 120 (the pixel dividing walls 116 are arranged horizontally and vertically in FIG. 5a).
  • One of the light-emitting elements 2021 of the display screen 101 may be disposed in one of the openings 120.
  • the position of the light-emitting element 2021 is the active display area (AA) of the sub-pixel 105.
  • the light-emitting element 2021 includes an anode 117, a light-emitting layer 118, and a cathode 119 on the side away from the first base substrate 125 in this order.
  • the light-emitting layer 118 emits light under the action of the electric field formed by the cathode 119 and the anode 117.
  • the pixel partition wall 116 is used to isolate adjacent sub-pixels 105 and define the sub-pixel 105 area.
  • the material constituting the pixel partition wall 116 may be silicon oxide (SiOx), silicon nitride (SiNx), etc., and the pixel partition wall 116 can transmit light.
  • the pixel circuit 104 is provided with a pixel partition wall 116 on the side away from the first base substrate 125, that is, the pixel partition wall 116 covers the surface of the pixel circuit 104, for the convenience of description In FIG. 8a, the pixel partition wall 116 is not shown on the surface of the pixel circuit 104.
  • the light-sensing control circuit 201 of the ambient light sensor can be located between the effective display areas of two adjacent sub-pixels 105. From the above, it can be seen that the effective display area is The position corresponding to the light-emitting element 2021.
  • the vertical projection of the light-sensing control circuit 201 of the ambient light sensor on the first base substrate 125 needs to be located in the pixel compartment.
  • the wall 116 is within the range of the vertical projection on the first base substrate 125.
  • the photosensitive control circuit 201 of the ambient light sensor in order to arrange the photosensitive control circuit 201 of the ambient light sensor on the side of the first base substrate 125 close to the second base substrate 127, as shown in FIG.
  • the first switch transistor Tc1 and the first photosensitive element in the photosensitive control circuit 201 of the ambient light sensor are fabricated on the surface of the base substrate 125 on the side close to the second base substrate 127.
  • the vertical projection of the light-sensitive control circuit 201 of the ambient light sensor on the first base substrate 125 is within the range of the vertical projection of the pixel partition wall 116 on the first base substrate 125.
  • the specific setting method is the same as that described above, and will not be omitted here. Go into details.
  • the first switch transistor Tc1 in the light-sensing control circuit 201 of the ambient light sensor and the transistor 504 in the pixel circuit 104 can be shared or not shared (the solution shown in the figure is not shared), and can be set according to requirements, This application is not limited.
  • the pixel circuit 104 can be used to control both the pixels and the light-sensing control circuit 201 of the ambient light sensor.
  • the frequency at which the first switching transistor Tc1 is turned on and off can be set according to the frequency at which data needs to be collected, so as to achieve the purpose of reducing power consumption.
  • the first photosensitive element in the photosensitive control circuit 201 of the ambient light sensor is a photosensitive transistor BG.
  • the first photosensitive element may also be a photosensitive diode VD or a photosensitive resistor.
  • the phototransistor BG in FIG. 8d is only replaced with a photodiode VD or a photoresistor, and the specific settings are the same as those described above, and will not be repeated here.
  • the photosensitive control circuit 201 of the ambient light sensor in order to arrange the photosensitive control circuit 201 of the ambient light sensor on the side of the second base substrate 127 away from the first base substrate 125, as shown in FIG.
  • the first switch transistor Tc1 and the first photosensitive element in the photosensitive control circuit 201 of the ambient light sensor are fabricated.
  • the vertical projection of the light-sensing control circuit 201 of the ambient light sensor on the first base substrate 125 needs to be located on the pixel partition wall 116 on the first base substrate 125. Within the range of the vertical projection, the light-sensing control circuit 201 of the ambient light sensor is located between the effective display areas of two adjacent sub-pixels 105.
  • the first photosensitive element can also be set as a phototransistor BG, a photodiode VD, or a photoresistor (in FIG. 8e, the phototransistor BG is taken as an example).
  • the photosensitive control circuit 201 of the ambient light sensor Compared with the above-mentioned method in which the photosensitive control circuit 201 of the ambient light sensor is arranged on the surface of the first base substrate 125 close to the light-emitting element 2021, only the first base substrate 125 is replaced with the second base substrate 127. Others are the same, and the specific settings are the same as those described above, so I won’t repeat them here.
  • the light-sensing control circuit 201 of the ambient light sensor may be disposed on the side surface of the pixel defining layer 126 away from the first base substrate 125.
  • the vertical projection of the light-sensing control circuit 201 of the ambient light sensor on the first base substrate 125 needs to be located on the pixel partition wall 116 on the first base substrate 125.
  • the light-sensing control circuit 201 of the ambient light sensor is located between the effective display areas of two adjacent sub-pixels 105.
  • the first photosensitive element can also be set as a phototransistor BG, a photodiode VD, or a photoresistor.
  • the arrangement of the light-sensing control circuit 201 of the ambient light sensor it is compared with the light-sensing control circuit 201 of the aforementioned ambient light sensor.
  • the method of setting the first base substrate 125 on the side surface close to the light-emitting element 2021 is that the first base substrate 125 is replaced with the pixel defining layer 126, and the other is the same.
  • the specific setting is the same as that described above, and will not be repeated here.
  • the display screen 101 further includes a touch layer 501, and the touch layer 501 is disposed on a side of the second base substrate 127 away from the first base substrate 125
  • the light-sensing control circuit 201 of the ambient light sensor can be arranged on the side of the touch layer 501 away from the first base substrate 125, or on the side surface of the touch layer 501 away from the first base substrate 125 .
  • the vertical projection of the light-sensing control circuit 201 of the ambient light sensor on the first base substrate 125 needs to be located on the pixel partition wall 116 on the first base substrate 125.
  • the light-sensing control circuit 201 of the ambient light sensor is located between the effective display areas of two adjacent sub-pixels 105.
  • the first photosensitive element can also be set as a phototransistor BG, a photodiode VD, or a photoresistor.
  • the arrangement of the light-sensing control circuit 201 of the ambient light sensor it is compared with the light-sensing control circuit 201 of the aforementioned ambient light sensor.
  • the method of setting the first base substrate 125 on the side surface close to the light-emitting element 2021 is that the first base substrate 125 is replaced with the touch layer 501, and the other is the same.
  • the specific settings are the same as those described above, and will not be repeated here.
  • the display screen 101 may further include an upper polarizer 502, which is disposed on a side of the second base substrate 127 away from the first base substrate 125
  • the photosensitive control circuit 201 of the ambient light sensor can be arranged on the side of the upper polarizer 502 away from the first base substrate 125, or on the surface of the upper polarizer 502 away from the first base substrate 125.
  • the vertical projection of the light-sensing control circuit 201 of the ambient light sensor on the first base substrate 125 needs to be located on the pixel partition wall 116 on the first base substrate 125. Within the range of the vertical projection, the light-sensing control circuit 201 of the ambient light sensor is located between the effective display areas of two adjacent sub-pixels 105.
  • the first photosensitive element can also be set as a phototransistor BG, a photodiode VD, or a photoresistor.
  • the arrangement of the light-sensing control circuit 201 of the ambient light sensor it is compared with the light-sensing control circuit 201 of the aforementioned ambient light sensor.
  • the method of setting the first base substrate 125 on the side surface close to the light-emitting element 2021 is that the first base substrate 125 is replaced with the upper polarizer 502, and the other is the same.
  • the specific setting is the same as that described above, and will not be repeated here.
  • the display screen 101 further includes a cover plate 503, which is disposed on a side of the second base substrate 127 away from the first base substrate 125.
  • the photosensitive control circuit 201 of the ambient light sensor can be arranged on the side of the cover plate 503 away from the first base substrate 125, or on the side surface of the cover plate 503 away from the first base substrate 125.
  • the vertical projection of the light-sensing control circuit 201 of the ambient light sensor on the first base substrate 125 needs to be located on the pixel partition wall 116 on the first base substrate 125. Within the range of the vertical projection, the light-sensing control circuit 201 of the ambient light sensor is located between the effective display areas of two adjacent sub-pixels 105.
  • the first photosensitive element can also be set as a phototransistor BG, a photodiode VD, or a photoresistor.
  • the light-sensing control circuit 201 of the ambient light sensor it is compared with the light-sensing control circuit 201 of the aforementioned ambient light sensor.
  • the method of setting the first base substrate 125 on the side surface close to the light-emitting element 2021 is only to replace the first base substrate 125 with the cover plate 503, and the other is the same.
  • first base substrate 125 and the second base substrate 127 are the same as the light-sensing control circuit 201 of the ambient light sensor, they are all manufactured by the mask process. Therefore, when the photosensitive control circuit 201 of the ambient light sensor is arranged on the surface of the second base substrate 127 away from the first base substrate 125 or on the surface of the second base substrate 127 away from the first base substrate 125 It can facilitate process production and simplify the change of station and equipment in the production process.
  • the display screen 101 is a liquid crystal display (LCD) 101. Since the liquid crystal display cannot emit light by itself, a backlight unit (BLU) is required to provide a light source to the liquid crystal display 101, so that each sub pixel (subpixel) 105 shown in FIG. 10a in the liquid crystal display 101 can be Lights up to realize image display.
  • LCD liquid crystal display
  • BLU backlight unit
  • the above-mentioned LCD 101 may include a first base substrate 125, a color filter (CF) substrate 604, a liquid crystal layer 601, and a second substrate as shown in FIG.
  • the pixel circuit can be used to control the deflection angle of the liquid crystal molecule 603 in the liquid crystal layer 601 corresponding to the position of the sub-pixel 105 where the pixel circuit is located, so as to control the amount of light provided by the BLU passing through the sub-pixel 105 to achieve the control sub-pixel 105 Pixel 105 displays the purpose of gray scale.
  • a black matrix 602 is arranged between different effective display areas AA, and the area between the black matrix 602 is the effective display area.
  • a liquid crystal cell for accommodating the liquid crystal layer 601 is formed between the first base substrate 125 and the second base substrate 127.
  • the second base substrate 127 is used to prevent water and oxygen in the air from entering the liquid crystal layer 601 and causing damage to the liquid crystal molecules 603.
  • the materials constituting the first base substrate 125 and the second base substrate 127 may both be hard transparent materials. For example, glass, sapphire, hard resin materials, etc.
  • the above-mentioned second base substrate 127 may be a package cover plate.
  • the electronic device 01 when the above-mentioned electronic device 01 has the function of adjusting the brightness of the display screen 101 according to the light, the electronic device 01 also includes the light-sensing control circuit 201 of the ambient light sensor, in order to avoid the light-sensing control circuit of the ambient light sensor 201 interferes with the light path of the pixel, and the light-sensing control circuit 201 of the ambient light sensor can be located between the effective display areas of two adjacent sub-pixels 105.
  • the position between the effective display areas of two adjacent sub-pixels 105 is the position corresponding to the black matrix 602.
  • the vertical projection of the light-sensing control circuit 201 of the ambient light sensor on the second base substrate 127 needs to be located in the black matrix. 602 is within the range of the vertical projection on the second base substrate 127.
  • the light-sensing control circuit 201 of the ambient light sensor may be disposed on the side of the second base substrate 127 away from the first base substrate 125.
  • the first switching transistor Tc1 and the first switching transistor Tc1 and the first switching transistor Tc1 and the second substrate in the photosensitive control circuit 201 of the above-mentioned ambient light sensor can be directly fabricated on the surface of the second substrate 127 away from the first substrate 125.
  • a photosensitive element is fabricated on the surface of the second substrate 127 away from the first substrate 125.
  • the vertical projection of the photosensitive control circuit 201 of the ambient light sensor on the second base substrate 127 is within the range of the vertical projection of the black matrix 602 on the second base substrate 127, and the other settings are the same as described above. I won't repeat it here.
  • the first photosensitive element can also be set as a photodiode VD or a photoresistor.
  • the phototransistor BG in FIG. 10c is just replaced with a photodiode VD or a photoresistor.
  • the specific settings are the same as above, so I won’t repeat them here.
  • the display screen 101 may further include a touch layer 501 disposed on a side of the second base substrate 127 away from the first base substrate 125
  • the photosensitive control circuit 201 of the ambient light sensor may be disposed on the surface of the touch layer 501 away from the first base substrate 125.
  • the vertical projection of the light-sensing control circuit 201 of the ambient light sensor on the second base substrate 127 needs to be located at the vertical of the black matrix 602 on the second base substrate 127. Within the projection range, the light-sensing control circuit 201 of the ambient light sensor is located between the effective display areas of two adjacent sub-pixels 105.
  • the first photosensitive element can also be set as a phototransistor BG, a photodiode VD, or a photoresistor.
  • BG phototransistor
  • VD photodiode
  • a photoresistor a photoresistor
  • the display screen 101 may further include an upper polarizer 502, which is disposed on a side of the second base substrate 127 away from the first base substrate 125
  • the photosensitive control circuit 201 of the ambient light sensor may be disposed on the surface of the upper polarizer 502 away from the first base substrate 125.
  • the vertical projection of the light-sensing control circuit 201 of the ambient light sensor on the second base substrate 127 needs to be located at the vertical of the black matrix 602 on the second base substrate 127. Within the projection range, the light-sensing control circuit 201 of the ambient light sensor is located between the effective display areas of two adjacent sub-pixels 105.
  • the first photosensitive element can also be set as a phototransistor BG, a photodiode VD, or a photoresistor.
  • the light-sensing control circuit 201 of the ambient light sensor compared to the above-mentioned light-sensing control circuit of the ambient light sensor 201 is arranged on the side surface of the second base substrate 127 away from the first base substrate 125, except that the second base substrate 127 is replaced with an upper polarizer 502, the other is the same, the specific settings are the same as described above, here No longer.
  • the display screen 101 may further include a cover plate 503, which is disposed on a side of the second base substrate 127 away from the first base substrate 125.
  • the photosensitive control circuit 201 of the ambient light sensor can be arranged on the side of the cover plate 503 away from the first base substrate 125, or on the side surface of the cover plate 503 away from the first base substrate 125, and in order to avoid The light-sensing control circuit 201 of the ambient light sensor interferes with the light path of the pixels.
  • the vertical projection of the light-sensing control circuit 201 of the ambient light sensor on the second base substrate 127 needs to be located in the vertical projection of the black matrix 602 on the second base substrate 127 Within the range, the light-sensing control circuit 201 of the ambient light sensor is located between the effective display areas of two adjacent sub-pixels 105.
  • the first photosensitive element may also be configured as a photosensitive transistor BG, a photosensitive diode VD, or a photosensitive resistor.
  • the arrangement of the first photosensitive control circuit 201 compared to the above-mentioned setting of the photosensitive control circuit 201 of the ambient light sensor The method on the side surface of the second base substrate 127 away from the first base substrate 125 is just that the second base substrate 127 is replaced with a cover plate 503, and the other is the same. The specific settings are the same as those described above, and will not be repeated here. .
  • the pixel circuit 104 can control the deflection angle of the liquid crystal molecules 603 in the liquid crystal layer 601, so that the amount of light passing through the sub-pixel 105 is different, and the purpose of controlling the sub-pixel 105 to display gray scale is achieved. Therefore, the liquid crystal layer There is no light transmission below. Therefore, for the convenience of production, when the display screen 101 is a liquid crystal display, the above-mentioned solution of arranging the photosensitive control circuit 201 above the liquid crystal layer 601 can be adopted.
  • the display screen 101 is close to the ear of the user during a call, and the human eye cannot see the display screen 101. During this period, the display screen 101 of the mobile phone is always on. If The user's talk time is relatively long, and at this time, the power consumption of the mobile phone is relatively large.
  • the light sensor 13 as shown in FIG. 2a may be a proximity light sensor.
  • the proximity light sensor 13b may include a transmitter 131 and a receiver 132.
  • the transmitter 131 is used to emit light into the environment of the display screen 101.
  • the light may have a wavelength of Infrared light around 850nm.
  • the emitted light is used to be incident on the object to be measured located on the display side of the display screen 101.
  • the measured object may be the user's face or hand.
  • the receiver 132 is used to receive the reflected light reflected by the measured object.
  • the electronic device further includes a processor, such as the aforementioned CPU, and the processor is signally connected to the transmitter 131 and the receiver 132 respectively.
  • the processor is used to calculate the distance between the display screen 101 and the object to be measured based on the infrared light emitted by the transmitter 131 and the reflected light received by the receiver 132, for example, by measuring the light pulse from emission to the object being emitted back Calculate the distance to the object by measuring the time interval. And according to the distance between the display screen 101 and the object to be measured, the brightness of the display screen is adjusted or the brightness of the display screen is controlled.
  • the infrared light emitted by the transmitter 131 is reflected by the measured object to the receiver 132, and the processor judges the distance of the measured object from the light sensor 13b according to the intensity of the received infrared light, so as to realize the sensing of the measured object
  • the proximity light sensor 13b can detect the distance between the user’s body part and the display screen 101.
  • the distance is less than the preset value, turning off the screen can reduce the power consumption of the electronic device 01.
  • the touch screen mobile phone can reduce the misoperation of the user's ear or hand on the mobile phone screen.
  • the proximity light sensor 13b can determine the distance between the user’s finger and the display 101 in time, so that the fingerprint under the screen can be awakened in time to prepare for the quick start of the identification process, otherwise the fingerprint will continue to sleep, and further Reduce power consumption.
  • the arrangement of the pixel unit 202 shown in FIG. 11a is the same as that described above, and will not be repeated here.
  • the gap between any two adjacent sub-pixels 105 may not be used for displaying images.
  • the proximity light sensor 13b is usually made of opaque material.
  • the above The transmitter 131 and the receiver 132 in the proximity light sensor 13b are located in the gap of the sub-pixel.
  • the proximity light sensor 13b may be arranged in the same layer as the pixel unit 202, or may be arranged in a different layer.
  • the layer placed close to the light sensor 13b is called the light-sensitive device layer.
  • the light-sensitive device layer is one layer;
  • the photosensitive device layer is two layers.
  • the photosensitive device layer can be a virtual concept, that is, it is set in other layers (non-display layers), such as in the touch layer, not an independent layer; it can also be an independent layer, for example, located in two layers between.
  • the proximity light sensor 13b may be placed on the same layer of the display driving unit of the pixel unit 202.
  • the present application does not limit the specific position of the proximity light sensor 13b, as long as the vertical projection of the transmitter 131 and the receiver 132 in the proximity light sensor 13b on the display layer can be located in the gap of the sub-pixel 105.
  • the proximity light sensor 13b since the proximity light sensor 13b is arranged in the gap issued by the sub-pixel 105, the non-display area can be reduced, thereby improving the screen of the electronic device. Accounted for. At the same time, it is possible to prevent the light sensor, such as the aforementioned proximity light sensor 13b, from blocking the light path of the light emitted by the sub-pixel 105.
  • the proximity light sensor 13b can also be made of a transparent material.
  • the proximity light sensor 13b can be arranged in a stack above the sub-pixels, and the aforementioned proximity light sensor 13b
  • the projection of the transmitter 131 and the receiver 132 in the display area 1001 can overlap with the projection of the sub-pixel 105 in the display area 1001 partially or completely, but the proximity light sensor 13b and the sub-pixel 105 are independent, which can reduce the sensor (the device itself and the projection of the sub-pixel 105).
  • the amount of light blocked by the sensor control circuit can also reduce the influence of the proximity of the light sensor 13b on the light path of the sub-pixel 105, and realize the light detection function without reducing the screen display effect.
  • the embodiment of the present application does not limit the specific position and number of the proximity light sensor 13b.
  • the number of the proximity light sensor 13b is four, and the above four proximity light sensors 13b can be set separately At the positions corresponding to the four top corners of the display screen 101 as shown in FIG. 11b.
  • the number of proximity light sensors 13b is eight, and four proximity light sensors 13b may be provided on both sides of the display screen 101.
  • the proximity light sensors 13b 13b can not only test the light intensity, adjust the brightness of the display screen 101, but also detect the position of the hand shielding, so as to determine the operation performed by the hand. For example, according to the distance between the user’s face and the phone during a call, confirm whether the screen needs to be turned off, and the user’s holding posture to confirm whether the user is running or in normal use; it can also be judged whether the phone is partially blocked to match the fingerprint sensor and/ Or the use of front camera, etc.
  • the transmitter 131 includes an emission control circuit 2011 as shown in FIG. 13, and a light-emitting element 2012 connected to the emission control circuit 2011, and the emission control circuit 2011 is used to receive electricity sent by a peripheral circuit. According to the electrical signal, the light-emitting element 2012 is triggered, so that the light-emitting element 2012 emits the above-mentioned emitted light, such as infrared light.
  • the emission control circuit 2011 may use a third switch transistor, where the third switch transistor may be a thin film transistor (TFT) or a MOS transistor.
  • TFT thin film transistor
  • MOS transistor MOS transistor
  • the third switching transistor may include a source s, a third gate (gate, g) 309a, an active layer 314 of the switching transistor, and a drain d.
  • the source s of the third switching transistor is connected to one end of the active layer 314 of the third switching transistor, the drain d of the third switching transistor is connected to the other end of the active layer 314 of the third switching transistor, and the third gate is 309a is used to receive an electrical signal sent by a peripheral circuit, and the electrical signal can control the conduction of the third switch transistor.
  • the display screen 101 may further include a second light-shielding layer 303b, wherein the second light-shielding layer 303b is located at the third gate 309a of the third switching transistor away from the active power One side of the layer 314, and the second light shielding layer 303b covers the third gate 309a of the third switching transistor.
  • the light-emitting element 2012 has a light-emitting layer 118 as shown in FIG. 13, one end of the light-emitting layer 118 is connected to the drain d of the third switching transistor, and the other end is connected to the electrode 17.
  • the drain d of the third switching transistor on the side of the light-emitting layer 118 can be energized.
  • the electrode 17 is energized again, and under the action of the electric field, the drain d of the third switching transistor and the carriers in the electrode 17 meet in the light-emitting layer 118 and excite photons, so that the light-emitting layer 118 emits light.
  • the light-emitting layer 118 may adopt a PN junction light-emitting mode or a PIN structure.
  • the light-emitting layer 118 may emit infrared light, for example.
  • the light-emitting element 2012 adopts a PN junction light-emitting mode as an example, where the emission control circuit 2011 and the light-emitting element 2012 are electrically connected, which means that one end of the light-emitting layer 118 of the light-emitting element 2012 is connected to the drain d of the third switching transistor .
  • the infrared emitting material of the light-emitting element 2012 can be gallium arsenide (GaAs) or gallium aluminide arsenide (GaAlAs); organic infrared emitting coatings, such as doped fluorescent materials, can also be used, and the emission wavelength range can be 600-1000 nm.
  • GaAs gallium arsenide
  • GaAlAs gallium aluminide arsenide
  • organic infrared emitting coatings such as doped fluorescent materials, can also be used, and the emission wavelength range can be 600-1000 nm.
  • the emission control circuit 2011 is used to receive the electrical signal sent by the peripheral circuit, and trigger the light-emitting element 2012 according to the electrical signal, so that the light-emitting element 2012 emits infrared light.
  • the emission intensity of the light-emitting element 2012 varies depending on the emission direction. It should be noted that the emission direction is the angle between the emitted light and the normal.
  • the emission intensity is defined as 100%.
  • the detection distance of the proximity light sensor 13b is usually 10-20 cm, and the infrared light emitted by the light-emitting element 2012 needs to be emitted with greater intensity than the preset value within the detection distance.
  • the display screen 101 may further include a second light blocking structure 209 as shown in FIG. Setting (as shown in Fig. 14b) can reduce the direction angle and increase the emission intensity of the light-emitting unit.
  • the light-emitting surface of the light-emitting element 2012 may be circular as shown in FIG. 14b.
  • the angle ⁇ 2 is in the range of 5° to 45°, the emission range of the emitted light can be reduced, the light is more concentrated, and the detection result is more accurate.
  • the angle ⁇ 2 is the angle between the emitted light and the normal line of the light-emitting surface of the light-emitting element.
  • the aforementioned angle ⁇ 2 may be 5°, 10°, 15°, 20°, 30°, or 45°.
  • the receiver 132 includes a photosensitive control circuit, such as a second switch transistor 2021 and a photosensitive unit connected to the second switch transistor 2021, such as a second photosensitive element 2022.
  • the second photosensitive element 2022 is used to receive the reflected light reflected by the measured object and perform photoelectric conversion to generate an electrical signal.
  • the second switch transistor 2021 is used to output the electrical signal generated by the second photosensitive element 2022 when it is in the on state.
  • the second photosensitive element 2022 may be the aforementioned photosensitive triode, photosensitive resistor or photosensitive diode.
  • the second switching transistor 2021 may, for example, adopt the same structure as the above-mentioned emission control circuit 2011.
  • the second photosensitive element 2022 may be a photosensitive triode BG.
  • the second switching transistor 2021 When a high voltage is applied to the fourth gate 309b of the second switching transistor 2021, the second switching transistor 2021 is turned on, and the phototransistor BG is provided to the fifth gate 309c of the phototransistor BG after the second switching transistor 2021 is turned on.
  • the high voltage turns on the phototransistor BG.
  • the electrode 21 when light hits the surface of the second photosensitive element 2022, it will cause the photosensitive layer 26 in the second photosensitive element 2022 to undergo a photoelectric conversion effect, which will change the impedance of the photosensitive layer 26 of the second photosensitive element 2022.
  • the accumulation or consumption of charges is formed at both ends of the photosensitive layer 26 of the second photosensitive element 2022 (as shown in FIG. 15, the photosensitive layer 26 has positive charges on the left side and negative charges on the right side).
  • a current can be formed between the charges accumulated at both ends of the photosensitive layer 26 of the second photosensitive element 2022 (as shown in FIG. 15, the direction of the current is the direction of positive charge to negative charge), and when the second switch transistor When 2021 is turned on, the second photosensitive element 2022 outputs an electrical signal.
  • the display screen 101 may further include a second filter layer 25.
  • the second filter layer 25 is disposed on the side where the light incident surface of the second photosensitive element 2022 is located, and covers the light incident surface of the second photosensitive element 2022. The light is filtered, thereby filtering out the non-response band of the second photosensitive element 2022, and improving the accuracy of light signal collection by the photosensitive control circuit 2021.
  • the second filter layer 25 may include a laminated silicon oxide (SiOx) layer and a titanium oxide (TiOx) layer. By adjusting the number and refractive index of the silicon oxide (SiOx) layer and the titanium oxide (TiOx) layer, the second filter layer 25 may be adjusted. The wavelength band of light that the filter layer 25 can filter.
  • the number and refractive index of the silicon oxide (SiOx) layer and titanium oxide (TiOx) can be adjusted so that the second filter layer 25 can filter out Light in the non-target wavelength band, so that the infrared light reflected by the measured object can pass through the second filter layer 25 and enter the second photosensitive element 2022.
  • this application does not limit the number of layers, stacking methods and refractive index of SiOx and TiOx. Those skilled in the art can use experiments, tests, simulations and other methods to determine the number of layers, stacking methods and refractive index of SiOx and TiOx.
  • the setting can be performed as long as the non-response wavelength band can be filtered according to the requirements of the second photosensitive element 2022 for the wavelength of light.
  • each photosensitive unit 2022 of the second photosensitive element 2022 is located in the gap between two adjacent sub-pixels.
  • the pixel unit composed of sub-pixels can display images from the above-mentioned.
  • the display screen 101 may further include a third light blocking structure 208 as shown in FIG.
  • the two photosensitive elements 2022 are arranged in a circle (as shown in FIG. 16b), so that the light of the sub-pixels can be blocked from entering the second photosensitive element 2022.
  • the light incident surface of the second photosensitive element 2022 may be circular as shown in FIG. 16b.
  • the angle ⁇ 3 is the angle between the incident light and the light-incident surface normal of the photosensitive element, for example, the second photosensitive element 2022.
  • the aforementioned angle ⁇ 3 may be 5°, 10°, 15°, 20°, 30°, or 45°.
  • the proximity light sensor 13b includes a transmitter 131 and a receiver 132.
  • the transmitter, transmitter 131 and receiver 132 are integrated together, and can be prepared by normal semiconductor process deposition or sputtering coating on the substrate. .
  • the first base substrate 125 also called a substrate, for example, a flexible substrate such as a polyimide PI substrate, or a rigid substrate such as a glass substrate
  • CVD chemical vapor deposition
  • the buffer layer 311 is formed, and then, a physical vapor deposition (PVD) method is used to form an emission control circuit 2011 (such as a third switching transistor) and a photosensitive control on the side surface of the buffer layer 311 away from the first base substrate 125
  • the active layer 314 of the circuit for example, the second switching transistor 2021).
  • a gate insulating layer 312 is formed using a CVD process.
  • the gate insulating layer 312 covers the active layer 314 of the third switching transistor and the second switching transistor 2021 described above.
  • the PVD process is used on the surface of the gate insulating layer 312 away from the first base substrate 125 to form the third gate 309a of the emission control circuit 2011 (for example, the third switching transistor) and the photosensitive control circuit (for example, , The fourth gate 309b of the second switching transistor 2021), and the fifth gate 309c of the second photosensitive element 2022.
  • a CVD process is used to form an intermediate layer 313 covering the third gate 309a, the fourth gate 309b, and the fifth gate 309c.
  • the emission control circuit 2011 is formed respectively, such as the source s and the drain d of the third switching transistor, the electrode 17 of the light-emitting element 2012, the electrode 21 of the second photosensitive element 2022, and the source s of the second switching transistor 2021 And drain d.
  • a second light shielding layer 303b is formed between the source s and the drain d of the third switching transistor, and the second light shielding layer 303b is connected to the source s and the drain d of the third switching transistor.
  • a third light shielding layer 303c is formed between the source s and the drain d of the second switching transistor 2021.
  • the material constituting the second light-shielding layer 303b and the third light-shielding layer 303c can be a black light-absorbing material (for example, black photoresist) or a metal with an insulating coating on the surface (for example, aluminum (Al), titanium (Ti), etc.). They are prepared by photolithography or metal sputtering respectively.
  • the photosensitive layer 26 of the second photosensitive element 2022 and the light-emitting layer 118 of the light-emitting element 2012 are respectively formed.
  • the materials constituting the photosensitive layer 26 and the light-emitting layer 118 can be traditional semiconductor materials, such as polysilicon, amorphous silicon, etc., which can be prepared by a CVD process, or can be organic semiconductor materials, such as pentacene and isopropylsilyne. Pentacene, etc., can be prepared by photolithography and coating methods.
  • a second filter layer 25 may be formed on the surface of the photosensitive layer 26 through a CVD process to filter out the non-responsive wavelength band.
  • the second filter layer 25 is covered with a passivation layer 310, and a third light blocking structure 208 and a second light blocking structure 209 are formed on the passivation layer 310, wherein the third light blocking structure 208 and the second light blocking structure are formed.
  • the material of the light structure 209 can be a black light-absorbing material (for example, black photoresist) or a metal with an insulating coating on the surface (for example, aluminum (Al), titanium (Ti), etc.). Similarly, photolithography or metal sputtering can be used respectively. preparation.
  • the display screen 101 may include multiple proximity light sensors and multiple pixel units arranged in the display area.
  • the proximity light sensor is located between the effective display areas of two adjacent pixel units.
  • the transmitter 131 includes an emission control circuit 2011 and a light emitting element 2012 connected to the emission control circuit 2011.
  • the emission control circuit 2011 is used to receive electrical signals sent by peripheral circuits and trigger the light emitting element 2012 according to the electrical signals.
  • the light emitting element 2012 is caused to emit infrared light.
  • the receiver 132 includes a second switching transistor 2021 and a second photosensitive element 2022 connected to the second switching transistor 2021.
  • the second photosensitive element 2022 is used to receive the reflected light reflected by the measured object 001 and perform photoelectric conversion to generate an electrical signal.
  • the second switch transistor 2021 is used to read the electrical signal and output the electrical signal. Therefore, the brightness of the display screen 101 can be adjusted according to the obtained electrical signal to prevent the user from accidentally touching. In the effective display area, there may be no need to specially provide grooves. Therefore, the notch area of the display screen 101 can be reduced, thereby increasing the screen-to-body ratio of the electronic device 01.
  • the foregoing is the description of the specific structure of the proximity light sensor 13b.
  • the structure of the display screen 101 having the light-sensing control circuit 2021 is described below as an example.
  • the display screen 101 is a self-luminous display screen.
  • the above-mentioned self-luminous display screen may have a plurality of sub-pixels arranged in an array.
  • the above-mentioned display screen 101 includes pixel circuits and light-emitting elements located in sub-pixels.
  • the pixel circuit drives the light-emitting element to emit light, so that each sub-pixel in the display screen 101 can be displayed according to a preset gray scale.
  • the above-mentioned light-emitting element may be an OLED device.
  • the above-mentioned light-emitting element may be a miniature LED, such as a micro LED or a mini LED.
  • This application does not limit the type of the light-emitting element, as long as the light-emitting element can emit light under the driving of the pixel circuit.
  • the following examples are all exemplified by taking the light-emitting element as an OLED.
  • the display screen 101 may further include a first base substrate 125 and a plurality of light-emitting elements 2021 arranged on the first base substrate 125 as shown in FIG. 17.
  • the display screen 101 may further include a second base substrate 127.
  • the second base substrate 127 is disposed on the side of the light-emitting element away from the first base substrate 125, and is used to prevent water and oxygen in the air from entering the light-emitting element and adversely affect the light-emitting element.
  • the above-mentioned display screen 101 may be a flexible display screen 101.
  • the material constituting the first base substrate 125 may be a flexible material, such as an organic material.
  • the above-mentioned second base substrate 127 may be an encapsulation layer, and the encapsulation layer includes a multilayer organic thin film encapsulation layer used as a flexible substrate, and a multilayer inorganic thin film encapsulation layer used to block water and oxygen.
  • the organic thin film encapsulation layer and the inorganic thin film encapsulation layer are arranged crosswise, and a thin film of the encapsulation layer close to the air and close to the light-emitting element is the inorganic thin film encapsulation layer.
  • the materials constituting the first base substrate 125 and the second base substrate 127 may both be hard transparent materials.
  • the above-mentioned second base substrate 127 may be a package cover plate.
  • the light sensor 13 may be located between the effective display areas of two adjacent sub-pixels. From the above, it can be seen that the effective display area is the position corresponding to the light-emitting element.
  • the projection of the light sensor 13 on the second base substrate 127 is located at the pixel unit on the second base substrate 127. In the gap of the projection on the top.
  • the proximity light sensor 13b may be disposed on the surface of the first base substrate 125 near the light-emitting element in FIG. 17.
  • the switch transistor in the proximity light sensor 13b and the transistor in the pixel circuit can be shared or not shared (the solution shown in the figure is not shared), and can be set according to requirements, which is not limited in this application.
  • the switch transistor in the proximity light sensor 13b is shared with the transistor in the pixel circuit
  • the pixel circuit can be used to control both the pixel and the proximity light sensor 13b.
  • the frequency of data collection can be set according to the need to set the switching transistor on and off frequency, so as to achieve the purpose of reducing power consumption.
  • the emission angle of the emitter can be limited to effectively block the influence of the emitted light on the TFT circuit of the OLED; an infrared emitter with a slightly longer emission wavelength can also be selected as the light source (e.g. ⁇ 1300nm), will not excite the TFT circuit of the existing OLED.
  • the gap between the sub-pixels of the conventional screen is 20-30um, and the metal wiring can be used to avoid the opening of 20um for the photosensitive unit in the screen; and the receiver (photosensitive unit) in the proximity light sensor only needs to ensure a minimum of 20um
  • the detection function can be performed normally if the sensitivity is increased. If the sensitivity needs to be improved, the number of receivers and/or the photosensitive area can be increased.
  • the proximity photosensor 13b may be disposed on a side surface of the second base substrate 127 away from the first base substrate 125.
  • the projection of the emitter 131 and the receiver 132 on the second base substrate 127 is located on the second base substrate 127 of the pixel unit. In the gap of the projection.
  • a light sensor with good light permeability or even transparency can also be used to further reduce the influence on the display effect.
  • the second photosensitive element 2022 may be a phototransistor, a photodiode VD, or a photoresistor.
  • the proximity photosensor 13b compared to the proximity photosensor 13b, the proximity photosensor 13b is disposed on the first base substrate 125 to emit light.
  • the method of one side surface of the component is only to replace the first base substrate 125 with the second base substrate 127, and the other is the same, and the specific settings are the same as those described above, and will not be repeated here.
  • the proximity light sensor 13b may be disposed on the surface of the light emitting element 2021 away from the first base substrate 125.
  • the vertical projection of the proximity light sensor 13b on the first base substrate 125 needs to be located in the gap of the projection of the pixel unit on the first base substrate 125.
  • the second photosensitive element 2022 may be a phototransistor, a photodiode VD, or a photoresistor.
  • the proximity photosensor 13b compared to the proximity photosensor 13b, the proximity photosensor 13b is disposed on the first base substrate 125 to emit light.
  • the way of the one side surface of the element is that the first base substrate 125 is replaced with the light-emitting element 2021, and the others are the same.
  • the specific settings are the same as those described above, and will not be repeated here.
  • the display screen 101 may further include a touch layer 501 disposed on a side of the second base substrate 127 away from the first base substrate 125
  • the proximity light sensor 13b may be disposed on the touch layer 501.
  • the projection of the emitter 131 and the receiver 132 in the proximity light sensor 13b on the second base substrate 127 is located on the second base substrate 127 of the pixel unit. In the gap of the projection.
  • the second photosensitive element 2022 may be a phototransistor, a photodiode VD, or a photoresistor.
  • the proximity photosensor 13b is disposed on the first base substrate 125 to emit light.
  • the method of one side surface of the element 2021 is just that the first base substrate 125 is replaced with the touch layer 104, and the others are the same, and the specific settings are the same as those described above, and will not be repeated here.
  • the display screen 101 may further include an upper polarizer 502, which is disposed on a side of the second base substrate 127 away from the first base substrate 125
  • the proximity light sensor 13b may be disposed on the surface of the upper polarizer 502 away from the first base substrate 125.
  • the projection of the emitter 131 and the receiver 132 in the proximity light sensor 13b on the second base substrate 127 is located in the gap between the projection of the pixel unit on the second base substrate 127 middle.
  • the second photosensitive element 2022 may be a phototransistor, a photodiode VD, or a photoresistor.
  • the proximity photosensor 13b compared to the proximity photosensor 13b, the proximity photosensor 13b is disposed on the first base substrate 125 to emit light.
  • the way of the side surface of the element is that the first base substrate 125 is replaced by the upper polarizer 502, and the other is the same, and the specific settings are the same as described above, and will not be repeated here.
  • the display screen 101 further includes a cover plate 503, which is disposed on a side of the second base substrate 127 away from the first base substrate 125.
  • the proximity light sensor 13b may be arranged on the surface of the cover plate 503 close to the first base substrate 125.
  • the projection of the emitter 131 and the receiver 132 in the proximity light sensor 13b on the second base substrate 127 is located in the gap between the projection of the pixel unit on the second base substrate 127 middle.
  • the cover plate 503 is further provided with a plurality of laminated optical film layers.
  • the proximity light sensor 13b may also be disposed on the cover plate 503 and the optical film. Between layers, these all belong to the protection scope of this application.
  • the second photosensitive element 2022 may be a phototransistor, a photodiode VD, or a photoresistor.
  • the proximity photosensor 13b compared to the proximity photosensor 13b, the proximity photosensor 13b is disposed on the first base substrate 125 to emit light.
  • the method of one side surface of the element 2021 is only to replace the first base substrate 125 with the cover plate 503, the other is the same, and the specific settings are the same as those described above, and will not be repeated here.
  • the preparation process is the same as that of the transistor in the pixel circuit on the first base substrate 125.
  • the proximity light sensor 13b and the pixel circuit can be fabricated on the first base substrate 125 at the same time, which can facilitate process production and simplify the change of workstations and equipment in the production process.
  • the transmitter 131 and the receiver 132 in the proximity light sensor 13b are integrated and are arranged on the same layer of the display screen 101. In other implementations of the present application, the transmitter 131 and the receiver 132 in the proximity light sensor 13b may also be integrated. The receiver 131 and the receiver 132 are arranged on different layers of the display screen 101.
  • the transmitter 131 may be disposed on the second base substrate 127, and the receiver 132 may be disposed on the first base substrate 125, and the transmitter 131 and the receiver 132 may be disposed on the first base substrate 125. Projection separation.
  • the transmitter 131 may also be arranged on the second base substrate 127, and the receiver 132 may be arranged on the first base substrate 125.
  • the transmitter 131 and the receiver 132 are on the first base substrate.
  • the projection on 125 is separated.
  • the projections of the transmitter 131 and the receiver 132 on the first base substrate 125 are separated, that is, the transmitter 131 and the receiver 132 do not overlap in the vertical direction (the thickness direction of the display screen), The mutual interference between the transmitter 131 and the receiver 132 can be avoided, and the detection sensitivity of the light sensor 13 can be improved.
  • the first base substrate 125 is under the second base substrate 127, when the transmitter 131 is disposed on the first base substrate 125, and the receiver 132 is disposed on the second base substrate 127, This will cause part of the infrared light emitted by the transmitter 131 to be directly received by the receiver 132, which affects the detection sensitivity. Therefore, placing the transmitter 131 above the layer where the receiver 132 is located can further improve the detection sensitivity. Therefore, the light sensor 13 is installed. At this time, it is a preferable solution to arrange the transmitter 131 above the layer where the receiver 132 is located.
  • the above description only takes the transmitter 131 and the receiver 132 respectively disposed on the first base substrate 125 and the second base substrate 127 as an example. In other implementation manners of the present application, the transmitter 131 and the receiver may also be used.
  • the sensors 132 are respectively arranged on different layers such as the touch layer 501, the upper polarizer 502, and the cover plate 503. It is only necessary to make the layer where the transmitter 131 is located higher than the layer where the receiver 132 is located, and these all fall within the protection scope of the present application.
  • the display screen 101 is an LCD. Since the LCD cannot emit light by itself, the BLU109 is required to provide a light source to the liquid crystal display, so that each sub-pixel in the liquid crystal display can emit light, thereby realizing image display.
  • the above-mentioned LCD may include a lower polarizer 110, a first base substrate 125, a color filter substrate 604, and a liquid crystal layer 601 as shown in FIG. 18.
  • a pixel circuit (not shown in the figure) is provided in each sub-pixel.
  • the pixel circuit can be used to control the deflection angle of the liquid crystal molecules corresponding to the sub-pixel position in the liquid crystal layer 601, so as to control the amount of light provided by the BLU passing through the sub-pixel, so as to control the sub-pixel display gray The purpose of the order.
  • the LCD may also include a second base substrate 127 to prevent water and oxygen in the air from entering the liquid crystal layer 601 and causing damage to the liquid crystal molecules.
  • the light-emitting elements constituting the first base substrate 125 and the second base substrate 127 may both be hard transparent materials.
  • the above-mentioned second base substrate 127 may be a package cover plate.
  • the electronic device 01 when the above-mentioned electronic device 01 has the function of adjusting the brightness of the display screen 101 according to light, the electronic device 01 also includes a light proximity light sensor 13b.
  • the projection of the transmitter 131 and the receiver 132 in the light sensor 13 b on the first base substrate 125 is located in the gap of the projection of the pixel unit on the first base substrate 125.
  • the light sensor 13 may be disposed on a side surface of the second base substrate 127 away from the first base substrate 125.
  • the projection of the transmitter 131 and the receiver 132 in the proximity light sensor 13 b on the second base substrate 127 is located in the gap of the projection of the pixel unit on the second base substrate 127.
  • the second photosensitive element 2022 may be a phototransistor, a photodiode VD or a photoresistor.
  • the second photosensitive element 2022 in FIG. 7 is only replaced with a photodiode VD.
  • the photoresistor the specific setting is the same as above, so I won't repeat it here.
  • the display screen 101 may further include a touch layer 501 disposed on the side of the second base substrate 127 away from the first base substrate 125
  • the proximity light sensor 13b may be disposed on the touch layer 501.
  • the projection of the emitter 131 and the receiver 132 in the proximity light sensor 13b on the second base substrate 127 is located in the gap between the projection of the pixel unit on the second base substrate 127 middle.
  • the second photosensitive element 2022 may be a phototransistor, a photodiode VD, or a photoresistor.
  • the arrangement of the proximity photosensor 13b compared to the above-mentioned placement of the proximity photosensor 13b on the second base substrate 127, it is far away from the first substrate 127.
  • the method on one side surface of the base substrate 125 is just that the second base substrate 127 is replaced with the touch layer 501, and the other is the same.
  • the specific settings are the same as those described above, and will not be repeated here.
  • the display screen 101 may further include an upper polarizer 502, which is disposed on a side of the second base substrate 127 away from the first base substrate 125
  • the proximity light sensor 13b may be disposed on the surface of the upper polarizer 502 away from the first base substrate 125.
  • the projection of the emitter 131 and the receiver 132 in the proximity light sensor 13b on the second base substrate 127 is located on the projection of the pixel unit on the second base substrate 127 In the gap.
  • the second photosensitive element 2022 may be a phototransistor, a photodiode VD, or a photoresistor.
  • the photosensor 13b is disposed farther away from the second base substrate 127.
  • the method on one side surface of the first base substrate 125 is just that the second base substrate 127 is replaced with an upper polarizer, and the others are the same.
  • the specific settings are the same as those described above, and will not be repeated here.
  • the display screen 101 may further include a cover plate 503, which is disposed on a side of the second base substrate 127 away from the first base substrate 125.
  • the light sensor 13 When the light sensor 13 is close to the light sensor 13b, the light sensor 13 can be arranged on the surface of the cover plate 503 away from the first base substrate 125, and in order to avoid the interference of the light sensor 13b on the pixel optical path, it is close to the emitter 131 in the light sensor 13b.
  • the projection of the receiver 132 on the second base substrate 127 is located in the gap of the projection of the pixel unit on the second base substrate 127.
  • the second photosensitive element 2022 may be a phototransistor, a photodiode VD, or a photoresistor.
  • the photosensor 13b is disposed farther away from the second base substrate 127.
  • the method on one side surface of the first base substrate 125 is just that the second base substrate 127 is replaced with a cover plate 503, and the others are the same.
  • the specific settings are the same as those described above, and will not be repeated here.
  • the pixel circuit can control the deflection angle of the liquid crystal molecules in the liquid crystal layer 601, so that the amount of light passing through the sub-pixels is different, so as to achieve the purpose of controlling the gray scale of the sub-pixels. Therefore, there are no problems under the liquid crystal layer 601601. The case of light transmission. Therefore, for the convenience of production, when the display screen 101 is a liquid crystal display screen, the present application gives priority to arranging the proximity light sensor 13b above the liquid crystal layer 601.
  • the transmitter 131 and the receiver 132 in the proximity light sensor 13b are integrated and are arranged on the same layer of the display screen 101.
  • the proximity light sensor 13b can also be purchased as an intervertebral disc.
  • the transmitter 131 and the receiver 132 are arranged on different layers of the display screen 101.
  • the receiver 132 may be disposed on the second base substrate 127, and the transmitter 131 may be disposed on the touch layer 501.
  • the projections of the transmitter 131 and the receiver 132 in the vertical direction overlap the light returned by the measured object will be blocked by the transmitter 131, which affects the detection sensitivity.
  • the projections of the transmitter 131 and the receiver 132 on the first base substrate 125 are separated, that is, the transmitter 131 and the receiver 132 do not overlap in the vertical direction, which can avoid the transmitter 131 and the receiver.
  • the sensors 132 interfere with each other to improve the detection sensitivity of the proximity optical sensor 13b.
  • the transmitter 131 when the transmitter 131 is placed below the layer where the receiver 132 is located, part of the infrared light emitted by the transmitter 131 will be directly received by the receiver 132, which affects the sensitivity of detection. Therefore, the transmitter 131 is set at Above the layer where the receiver 132 is located, the detection sensitivity can be further improved. Therefore, when the proximity light sensor 13b is arranged, it is a preferable solution to arrange the transmitter 131 above the layer where the receiver 132 is located.
  • the transmitter 131 and the receiver 132 may be disposed on different layers such as the second base substrate 127, the touch layer 501, the upper polarizer 502, and the cover plate 503, respectively. It is only necessary to make the layer where the transmitter 131 is located higher than the layer where the receiver 132 is located, and these all fall within the protection scope of the present application.
  • the light sensor 30 in the display screen 101 may be the ambient light sensor 13a, or the light sensor 30 may be the proximity light sensor 13b.
  • the display screen 101 may include the above-mentioned ambient light sensor 13a or the above-mentioned proximity light sensor 13b as shown in FIG. 19.
  • the manufacturing process of the ambient light sensor 13a and the proximity light sensor 13b is the same as that described above, and will not be repeated here.
  • An embodiment of the present application also provides an electronic device, which includes any one of the above-mentioned display screens, and the electronic device has the same technical effect as the display screen provided in the foregoing embodiments, and details are not described herein again.

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Abstract

一种显示屏（101）和电子设备，用于缩小显示屏（101）的刘海区，提高电子设备的屏占比。显示屏（101）具有显示区（1001），显示屏包括多个亚像素（105）和至少一个光线传感器（13）；亚像素（105）设置于显示区（1001），亚像素（105）具有有效显示区（AA）；至少一个光线传感器（13），设置于显示区（1001），光线传感器（13）位于相邻的亚像素（105）的有效显示区（AA）之间。

Description

一种显示屏和电子设备
本申请要求于2020年4月10日提交国家知识产权局、申请号为202010280694.4、申请名称为“一种显示屏和电子设备”的中国专利申请的优先权，以及2020年6月18日提交国家知识产权局、申请号为202010560975.5、申请名称为“显示面板、显示装置和电子设备”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及显示技术领域，尤其涉及一种显示屏和电子设备。
背景技术
随着显示屏技术的发展，显示屏应用的越来越广泛。在显示屏的应用过程中，需要根据用户的需要对显示屏的亮度进行调节。因此，需要在显示屏内设置感光器件。而目前通常会在显示屏上预留一部分非显示区(也称为刘海区)用于设置上述感光器件。上述刘海区的存在会降低电子设备的屏占比。
发明内容
本申请实施例提供一种显示屏和电子设备，用于缩小显示屏的刘海区，提高电子设备的屏占比。
为达到上述目的，本申请采用如下技术方案：
本申请实施例的一方面，提供一种显示屏。显示屏具有显示区。显示屏包括多个亚像素以及至少一个光线传感器。该亚像素设置于显示区，亚像素具有有效显示区。至少一个光线传感器设置于显示区，光线传感器位于相邻的亚像素的有效显示区之间。相比与将光线传感器设置于刘海区的方式，由于该光线传感器设置于亚像素的有效显示区之间，可以缩小或者去除显示屏的刘海，从而增大显示屏内用于布局亚像素的区域的面积，提高电子设备的屏占比。
可选的，至少一个光线传感器包括环境光传感器。环境光传感器包括第一光敏元件和第一开关晶体管。第一光敏元件用于对入射至显示屏的环境光线进行光电转换，并生成电信号。第一开关晶体管与第一光敏元件相耦接，第一开关晶体管用于在处于导通状态时，输出第一光敏元件生成的电信号。根据获取的电信号可以对显示屏的亮度进行调节，实现根据环境光的亮度调节显示屏亮度的功能。
可选的，至少一个光线传感器包括接近光传感器。接近光传感器包括发射器和接收器。其中，发射器用于向显示屏的显示侧发射出射光，出射光用于入射至位于显示屏显示侧的被测物体。接收器用于接收被测物体反射的反射光。接收器根据被测物体反射的反射光可以确定出被测物体与显示屏之间的距离，进而对显示屏的亮度进行调节，实现根据被测物体与显示屏之间的距离对显示屏的亮度进行调节功能。
可选的，显示屏还包括第一衬底基板、第二衬底基板以及多个发光元件。上述多个发光元件设置于第一衬底基板和第二衬底基板之间。上述发光元件可以为OLED或者微型LED，在此情况下，该显示屏可以为自发光的显示屏。
可选的，显示屏还包括第一衬底基板、第二衬底基板以及液晶层。该液晶层设置于第一衬底基板和第二衬底基板之间。在此情况下，上述显示屏为液晶显示屏。
可选的，光线传感器设置于第一衬底基板靠近第二衬底基板的一侧。或者，光线传感器设置于第二衬底基板远离第一衬底基板的一侧。该第一衬底基板可以为形成有像素驱动电路的基板。第二衬底基板可以为封装层或者封装板。或者，该第一衬底基板可以为封装层或者封装板。第二衬底基板可以为形成有像素驱动电路的基板。
可选的，至少一个光线传感器包括接近光传感器，接近光传感器包括发射器和接收器。发射器用于向显示屏的显示侧发射出射光，出射光用于入射至位于显示屏显示侧的被测物体。接收器用于接收被测物体反射的反射光。发射器设置于第一衬底基板靠近第二衬底基板的一侧，接收器设置于第二衬底基板远离第一衬底基板的一侧。或者，发射器设置于第二衬底基板远离第一衬底基板的一侧，接收器设置于第一衬底基板靠近第二衬底基板的一侧。将发射器和接收器设置于不同的衬底基板上，可以避免发射器和接收器的光路相互干扰。
可选的，在显示屏包括发光元件的情况下，显示屏还包括像素界定层。该像素界定层设置于第一衬底基板上，且包括多个像素分隔墙。多个像素分隔墙横纵交叉围设成多个开口。一个发光元件位于一个开口内。其中，光线传感器在第一衬底基板上的垂直投影位于像素分隔墙在第一衬底基板上的垂直投影的范围内，从而可以避免光线传感器对像素光路的干扰。
可选的，光线传感器设置于像素界定层远离第一衬底基板的一侧。在此情况下，可以方便使得光线传感器在第一衬底基板上的垂直投影，位于像素分隔墙在第一衬底基板上的垂直投影的范围内，从而避免光线传感器对像素光路的干扰。
可选的，显示屏还包括黑矩阵。该黑矩阵位于第二衬底基板靠近第一衬底基板的一侧。其中，光线传感器在第二衬底基板上的垂直投影位于黑矩阵在第二衬底基板上的垂直投影的范围内，从而可以避免光线传感器对像素光路的干扰。
可选的，显示屏还包括触控层。触控层设置于第二衬底基板远离第一衬底基板的一侧。光线传感器设置于触控层远离第一衬底基板的一侧。在光线传感器位于相邻两个亚像素的有效显示区之间的情况下，可以避免光线传感器对像素光路的干扰。
可选的，显示屏还包括上偏光片。上偏光片设置于第二衬底基板远离第一衬底基板的一侧；光线传感器设置于上偏光片远离第一衬底基板的一侧表面上。在光线传感器位于相邻两个亚像素的有效显示区之间的情况下，可以避免光线传感器对像素光路的干扰。
可选的，显示屏还包括盖板。盖板设置于第二衬底基板远离第一衬底基板的一侧；光线传感器设置于盖板远离第一衬底基板的一侧表面上。在光线传感器位于相邻两个亚像素的有效显示区之间的情况下，可以避免光线传感器对像素光路的干扰。
可选的，显示屏还包括横纵交叉的选通信号线和读取信号线。第一光敏元件包括光敏三极管。光敏三极管的栅极与第一开关晶体管的第一极相耦接，光敏三极管的第一极与读取信号线相耦接，光敏三极管的第二极与第一电压端相耦接。第一开关晶体管的栅极与选通信号线相耦接，第一开关晶体管的第二极与第二电压端相耦接。这样一来，当第一开关晶体管的栅极加载高电压时，第一开关晶体管导通，此时，光敏三 极管的栅极加载高电压，光敏三极管导通，从而将入射至显示屏的光线进行光电转换，并生成电信号，光线传感器在第一开关晶体管处于导通状态时，输出电信号，从而实现可以根据读取到的电信号调整显示屏的亮度。
可选的，显示屏还包括横纵交叉的选通信号线和读取信号线。第一光敏元件包括光敏二极管或光敏电阻。第一光敏元件的第一端与第一开关晶体管的第一极相耦接，第一光敏元件的第二端与读取信号线相耦接。第一开关晶体管的栅极与选通信号线相耦接，第一开关晶体管的第二极与第一电压端相耦接。这样一来，当第一开关晶体管的栅极加载高电压时，第一开关晶体管导通，光敏电阻能够将入射至显示屏的光线进行光电转换，并生成电信号，光线传感器在第一开关晶体管处于导通状态时，输出电信号，从而实现可以根据读取到的电信号调整显示屏的亮度。
可选的，光线传感器还包括电阻。电阻的第一端与读取信号线相耦接，电阻的第二端与第三电压端相耦接。其中，第一电压端的电压大于第三电压端的电压。如此一来，第一电压端和第三电压端之间可以形成电场，在电场的作用下，第一光敏元件将入射至显示屏的光线进行光电转换，通过测试电阻两端的电压，获取第一光敏元件的阻抗变化情况。从而将阻抗的变化情况传输至读取信号线，根据获取的阻抗变化情况调整显示屏的亮度。
可选的，显示屏还包括第一滤光层。第一滤光层设置于第一光敏元件的入光面所在的一侧，且覆盖第一光敏元件的入光面。第一滤光层用于对入射至显示屏的光线进行过滤。滤光层包括层叠的氧化硅层、氧化钛层。基于此，通过调整第一滤光层中氧化硅层和氧化钛层的层数和折射率，使用第一滤光层可以过滤掉第一光敏元件的非响应波段。
可选的，显示屏还包括第一挡光结构。第一挡光结构设置于第一光敏元件的入光面所在的一侧，且绕第一光敏元件的一周设置，从而可以遮挡显示屏自身发出的光线，避免其对光线传感器采集结果的干扰。
可选的，第一光敏元件的入光面为圆形。第一光敏元件的入光面半径R1与第一挡光结构的高度H1的比值为R1/H1＝tanθ 1。其中，角度θ 1为入射光与第一光敏元件的入光面法线之间的夹角；角度θ 1在5°～30°范围内。基于此，缩小了入射光的入射范围，避免了非检测光线射入，从而可以使得检测结果更加准确。
可选的，第一开关晶体管为顶栅型晶体管。显示屏还包括第一遮光层。第一遮光层位于第一开关晶体管的栅极远离第一开关晶体管的有源层的一侧，且第一遮光层覆盖第一开关晶体管的栅极，从而可以避免外界光线对开关晶体管有源层的破坏。
可选的，发射器包括发射控制电路以及与发射控制电路连接的发光元件。发射控制电路用于接收外围电路发送的电信号，并根据电信号触发发光元件，使得发光元件发射出射光，出射光为红外光。由此，可以将发射器发射的光波和显示屏的发光元件发射的光波区分开。
可选的，显示屏还包括第二挡光结构。第二挡光结构设置于发光元件的出光面所在的一侧，且绕发光元件的一周设置。其中，发光元件的入光面半径R2与第二挡光结构的高度H2的比值为R2/H2＝tanθ 2，θ 2的角度为5°～45°。基于此，缩小了发光元件发射的出射光的出射范围，提高发光单元的发射强度，从而可以使得检测结果更加准 确。
可选的，接收器包括第二光敏元件和第二开关晶体管。第二光敏元件用于接收被测物体反射的反射光，并进行光电转换，生成电信号。第二开关晶体管与第二光敏元件相耦接，第二开关晶体管用于在处于导通状态时，输出第二光敏元件生成的电信号。根据获取的电信号可以对显示屏的亮度进行调节，实现根据被测物体与显示屏之间的距离，调节显示屏亮度的功能。
可选的，接收器还包括第二滤光层。第二滤光层设置于第二光敏元件的入光面上；第二滤光层用于对入射至第二光敏元件的光线进行过滤。第二滤光层包括层叠设置的氧化硅层、氧化钛层。基于此，通过调整第二滤光层中氧化硅层和氧化钛层的层数和折射率，使用第二滤光层可以过滤掉第一光敏元件的非响应波段。
可选的，显示屏还包括第三挡光结构。第三挡光结构设置于第二光敏元件的入光面所在的一侧，且绕第二光敏元件的一周设置。其中，第二光敏元件的入光面半径R3与第三挡光结构的高度H3的比值为R3/H3＝tanθ 3，θ 3的角度为5°～45°。由此，缩小了被测物体反射光入射至接收器的光线的入射范围，避免了非检测光线射入，从而可以使得检测结果更加准确。
本申请实施例的另一方面，提供一种电子设备，包括如上的任意一种显示屏，该电子设备采用上述显示屏，提高了屏占比。
可选的，至少一个光线传感器包括环境光传感器。电子设备还包括处理器，处理器与环境光传感器相耦接。处理器用于根据环境光传感器输出的电信号，调整显示屏的亮度。处理器根据获取的电信号可以对显示屏的亮度进行调节，实现根据环境光的亮度调节显示屏亮度的功能。
可选的，至少一个光线传感器包括接近光传感器，接近光传感器包括发射器和接收器。发射器用于向显示屏的显示侧发射出射光，出射光用于入射至位于显示屏显示侧的被测物体。接收器用于接收被测物体反射的反射光。电子设备还包括处理器，处理器和发射器以及接收器相耦接；处理器用于根据发射器发射的出射光和接收器接收的反射光计算电子设备与被测物体之间的距离，并根据电子设备与被测物体之间的距离调整显示屏的亮度。处理器根据被测物体与显示屏之间的距离对显示屏的亮度进行调节功能。
附图说明
图1a为本申请实施例提供的一种电子设备的结构示意图；
图1b为本申请实施例提供的一种显示屏的结构示意图；
图1c为本申请实施例提供的另一种显示屏的结构示意图；
图1d为本申请实施例提供的另一种显示屏的结构示意图；
图2a为本申请实施例提供的另一种电子设备的结构示意图；
图2b为本申请实施例提供的一种环境光传感器的设置位置示意图；
图3a为本申请实施例提供的一种感光控制电路的电路图；
图3b为本申请实施例提供的另一种感光控制电路的电路图；
图3c为沿图1b中的虚线E-E进行剖切的到的一种剖视图；
图3d为图3c中W区域的局部结构示意图；
图3e为图3d中第一挡光结构的一种结构示意图；
图4a为本申请实施例提供的另一种电子设备的结构示意图；
图4b为本申请实施例提供的另一种电子设备的结构示意图；
图4c为相关技术方案提供的一种电子设备的结构示意图；
图4d为沿图4c中的虚线A-A进行剖切的到的剖视图；
图4e为本申请实施例提供的一种电子设备的截面结构示意图；
图5a为本申请实施例提供的显示屏的另一种局部结构示意图；
图5b为本申请实施例提供的显示屏的另一种局部结构示意图；
图5c为本申请实施例提供的显示屏的另一种局部结构示意图；
图6a为本申请实施例提供的另一种感光控制电路的电路图；
图6b为沿图1b中的虚线E-E进行剖切的到的另一种剖视图；
图7为本申请实施例提供的另一种光线传感器的电路图；
图8a为本申请实施例提供的另一种显示屏的结构示意图；
图8b为沿图8a中的虚线O-O进行剖切的到的一种剖视图；
图8c为沿图8a中的虚线O-O进行剖切的到的另一种剖视图；
图8d为本申请实施例提供的另一种显示屏的结构示意图；
图8e为本申请实施例提供的另一种显示屏的结构示意图；
图9为本申请实施例提供的另一种显示屏的结构示意图；
图10a为本申请实施例提供的另一种显示屏的结构示意图；
图10b为沿图10a中的虚线F-F进行剖切的到的一种剖视图；
图10c为本申请实施例提供的另一种显示屏的结构示意图；
图10d为本申请实施例提供的另一种显示屏的结构示意图；
图11a为本申请实施例提供的另一种显示屏的结构示意图；
图11b为本申请实施例提供的另一种显示屏的结构示意图；
图11c为本申请实施例提供的另一种显示屏的结构示意图；
图12为本申请实施例提供的具有接近光传感器的一种显示屏的结构示意图；
图13为本申请实施例提供的一种接近光传感器的发射器的结构示意图；
图14a为本申请实施例提供的一种发射器的局部结构示意图；
图14b为本申请实施例提供的另一种发射器的局部结构示意图；
图15为本申请实施例提供的一种接近光传感器的接收器的结构示意图；
图16a为本申请实施例提供的一种接收器的局部结构示意图；
图16b为本申请实施例提供的一种接收器的局部结构示意图；
图17为本申请实施例提供的另一种显示屏的结构示意图；
图18为本申请实施例提供的另一种显示屏的结构示意图；
图19为本申请实施例提供的另一种显示屏的结构示意图。
附图标记：
01-电子设备；10-显示模组；11-中框；12-后壳；13-光线传感器；101-显示屏；202-像素单元；104-像素电路；105-亚像素；105R-红色亚像素；105G-绿色亚像素；105B-蓝色亚像素；AA-有效显示区；106-非有效显示区；220-感光像素；1001-显示区域； 1002-边框区域；GL-栅线；RL-读取信号线；Tc1-第一开关晶体管；BG-光敏三极管；RG-光敏电阻；125-第一衬底基板；302-第一栅极；303a-第一遮光层；304-第一挡光结构；305-第一滤光层；307-第二栅极；308-光敏晶体管的有源层；310-钝化层；311-缓冲层；312-栅极绝缘层；313-中间层；314-开关晶体管的有源层；317-氧化硅(SiOx)层；318-氧化钛(TiOx)层；13a-环境光传感器；201-感光控制电路；100-刘海区；503-盖板；320-第一凹槽；321-第二凹槽；322-第三凹槽；323-第四凹槽；324-第五凹槽；VD-光敏二极管；2021-发光元件；116-像素分隔墙；127-第二衬底基板；501-触控层；502-上偏光片；117-阳极；118-发光层；119-阴极；126-像素界定层；120-开口；504-晶体管；601-液晶层；602-黑矩阵；603-液晶分子；604-彩膜基板；13b-接近光传感器；131-发射器；132-接收器；2011-发射控制电路；309a-第三栅极；303b-第二遮光层；209-第二挡光结构；17-发光元件的电极；2021-第二开关晶体管；303c-第三遮光层；309b-第四栅极；2022-第二光敏元件；21-第二光敏元件的电极；25-第二滤光层；26-感光层；208-第三挡光结构；309c-第五栅极。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。
以下，术语“第一”、“第二”等仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”等的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。
此外，本申请中，“上”、“下”等方位术语可以包括但不限于相对附图中的部件示意置放的方位来定义的，应当理解到，这些方向性术语可以是相对的概念，它们用于相对于的描述和澄清，其可以根据附图中部件附图所放置的方位的变化而相应地发生变化。
在本申请中，除非另有明确的规定和限定，术语“连接”应做广义理解，例如，“连接”可以是固定连接，也可以是可拆卸连接，或成一体；可以是直接相连，也可以通过中间媒介间接相连。此外，术语“耦接”可以是实现信号传输的电性连接的方式。“耦接”可以是直接的电性连接，也可以通过中间媒介间接电性连接。
本申请实施例提供一种电子设备。该电子设备包括手机(mobile phone)、平板电脑(pad)、电脑、电视、智能穿戴产品(例如，智能手表、智能手环)、虚拟现实(virtual reality，VR)终端设备、增强现实(augmented reality AR)等具有显示功能的电子产品。本申请实施例对上述电子设备的具体形式不做特殊限制。
为了方便说明，以下以电子设备01为如图1a所示的手机为例。在此情况下，上述电子设备01主要包括显示模组10、中框11以及后壳12。中框11位于显示模组10和后壳12之间。显示模组10、后壳12分别与中框11相连接。其中，后壳12和中框11之间形成的容纳腔用于容纳电池、摄像头(图1a中未示出)，以及如图1a所示的印刷电路板(printed circuit board，PCB)等电子元器件。
在本申请一种实现方式中，显示屏101如图2a所示具有用于显示图像的显示区域1001，以及位于该显示区域1001外围的边框区域1002。该边框区域1002内设置有用 于驱动显示屏101进行画面显示的驱动电路，例如源极驱动电路、栅极驱动电路等。
此外，显示模组10用于显示图像，其包括如图1b所示的显示屏101，该显示屏101具有多个像素(pixel)单元202。在本申请的一些实施例中，像素排布可以如图1b所示，一个像素单元202包括一个红(red，R)色亚像素105R、一个绿(green，G)色亚像素105G以及一个蓝(blue，B)色亚像素105B。示例的，红色亚像素105R和绿色亚像素105G沿X方向位于同一行，蓝色亚像素105B位于另一行，且与红色亚像素105R沿Y轴方向位于同一列。对于图1b所示的像素排布方式，蓝色亚像素105B的右侧，绿色亚像素105G的下方可以不用设置亚像素。从而使得沿Y方向位于同一列的相邻两个绿色亚像素105G之间具有一定的间隙。
需要说明的是，图1b是以同一像素单元202中红色亚像素105R和绿色亚像素105G沿X轴方向位于同一行，蓝色亚像素105B位于下一行为例进行的说明。在本申请的另一些实施例中，同一像素单元202中红色亚像素105R和蓝色亚像素105B可以沿X轴方向位于同一行，而绿色亚像素105G位于下一行，或者绿色亚像素105G和蓝色亚像素105B。
可以沿X轴方向位于同一行，红色亚像素105R位于下一行三种组合。
在本申请的另一些实施例中，显示屏101的像素排布方式还可以如图1c所示，同一个像素单元202中的红色亚像素105R、绿色亚像素105G和蓝色亚像素105B可以沿X轴方向依次排布于同一行。需要说明的是，关于红、绿、蓝三原色亚像素105的排列方式可以根据需求而定，本申请对此不做限定。例如，上述显示屏101的亚像素105的排列方式还可以为红色亚像素、蓝色亚像素以及绿色亚像素面积不相等的Pentile像素排列方式(也可以称为P排列)、RGB-Delta像素排列方式(也可以称为D排列)等。
对于图1b或图1c所示的任意一种像素排布方式，任意一个亚像素105具有有效显示区(active area，AA)，以及位于该AA区周边的非有效显示区106。上述亚像素105的AA区为该亚像素105中真正用于显示图像的区域。在此情况下，上述任意两个相邻的亚像素105的AA区之间的非有效显示区106不用于显示图像。
此外，该电子设备01还可以包括如图2a所示的至少一个光线传感器13(图2b以一个光线传感器13为例)。在电子设备01具有多个光线传感器13的情况下，根据用户的需求，上述多个光线传感器13的功能可以不完全相同。
在本申请的一些实施例中，在较暗的环境下使用显示屏101时，会感到显示屏101的亮度太强，容易引起疲劳，而在阳光比较充足的户外时，显示屏101的亮度又太低，造成看不清楚屏幕，给应用带来困难。
基于此，本申请实施例提供的电子设备01还具有能够根据光线对显示屏101的亮度进行调节的功能。在此情况下，上述至少一个光线传感器13可以包括环境光传感器13a。该环境光传感器13a可以包括至少一个如图2b所示的感光像素220，该环境光传感器13a可以称为感光单元。需要说明的是，图2b是以环境光传感器13a包括多个感光像素220为例进行的说明，上述任意一个感光像素220中设置有感光控制电路201。
由上述可知，相邻两个亚像素AA区之间的区域为非有效显示区106，该非有效显示区106不会显示图像。因此，为了避免环境光传感器13a中各个感光控制电路201 对显示屏显示的图像造成干扰，上述环境光传感器13a中的各个感光控制电路201可以间隔设置。在本申请的一些实施例中，环境光传感器13a的感光控制电路201可以位于相邻两个亚像素105的有效显示区AA之间的非有效显示区106内(例如图1b和图1c所标识的位置)。或者，在本申请的另一些实施例中，如图1d所示，环境光传感器13a的感光控制电路201可以位于相邻两个像素单元202之间的非有效显示区106内。
如图3a所示，环境光传感器的每个感光控制电路201包括第一开关晶体管Tc1和与开关晶体管Tc1相耦接的第一光敏元件(例如，图3a所示的光敏三极管BG)。其中，第一开关晶体管Tc1可以为薄膜晶体管(thin film transistor，TFT)或者MOS管。以下为了方便说明，均是以第一开关晶体管Tc1为TFT为例进行的说明。
需要说明的是，本申请实施例中，任意一个TFT可以包括栅极(gate，g)、有源层(active layer，AL)以及第一极，例如为源极(source，s)以及第二极，例如为漏极(drain，d)。或者，晶体管的第一极可以为漏极d，第二极为源极s。本申请对此不做限定，为了方便举例说明，以下均是以晶体管的第一极为漏极d，第二极为源极s为例进行的说明。
此外，当第一开关晶体管Tc1为TFT时，第一开关晶体管Tc1可以为顶栅型晶体管或者底栅型晶体管，当其为顶栅型晶体管时，第一开关晶体管Tc1的栅极g相对于有源层AL更远离衬底。在此情况下，为了避免第一开关晶体管Tc1的有源层314受到外界光线的破坏，显示屏101还可以包括如图3c所示的第一遮光层303a，其中，第一遮光层303a位于第一开关晶体管Tc1的栅极g远离开关晶体管Tc的有源层AL的一侧，且第一遮光层303a覆盖第一开关晶体管Tc1的栅极g。当其为顶栅型晶体管时，第一开关晶体管Tc1的栅极g相对于有源层AL更靠近衬底。本申请对此不做限定，为了方便举例说明，以下均是以第一开关晶体管Tc1为顶栅型晶体管为例进行的说明。
基于此，在本申请的一些实施例中，如图3a所示，第一光敏元件可以为光敏三极管BG。其中，光敏三极管BG的结构与第一开关晶体管Tc1类似，即可以为TFT或者MOS管。当光敏三极管BG为TFT时，该光敏三极管BG可以为顶栅型或者底栅型晶体管。为了方便说明，以下是以光敏三极管BG为顶栅型为例进行的说明。此外，光敏三极管BG和第一开关晶体管Tc1不同之处在于光敏三极管BG的有源层处接入了一个光敏二极管。上述中第一开关晶体管Tc1和第一光敏元件相耦接是指光敏三极管BG的栅极g与第一开关晶体管Tc1的第一极相耦接。
在此情况下，显示屏101还可以包括如图2b所示的横纵交叉的选通信号线GL和读取信号线RL。其中，光敏三极管BG的第一极，例如，图3a中光敏三极管BG的漏极(drain，d)与读取信号线RL相耦接，第一开关晶体管Tc1的栅极(gate，g)与选通信号线GL相耦接。此外，光敏三极管BG的第二极与第一电压端V1相耦接，第一开关晶体管Tc1的第二极，例如图3a中光敏三极管BG的源极(source，s)与第二电压端V2相耦接。
基于此，GL的输入信号可以控制第一开关晶体管Tc1的导通，当选通信号线GL接收选通信号后，第一开关晶体管Tc1导通，此时，V2的电压可以加载到光敏三极管 BG的栅极g，使光敏三极管BG导通。
此外，在本申请的另一些实施例中，上述V1和V2的电压可以不同。此时，V1可以大于V2，V1也可以小于V2，只要能够起到导通第一开关晶体管Tc1和光敏三极管BG即可。或者，在本申请的另一些实施例中，如图3b所示，上述V1和V2的电压可以相同。此时，第一开关晶体管Tc1和光敏三极管BG的第一极可以连接同一个电压端V1。
如图3c(沿图1b中的虚线E-E进行剖切得到的剖视图，仅为显示屏101中具有环境光传感器的感光控制电路201所在的部分)所示，当光线射至光敏三极管BG的表面时，会导致光敏三极管BG的有源层308发生光电转换效应，使光敏三极管BG的有源层308的阻抗发生变化，而在光敏三极管BG的有源层308的两端形成电荷的累积或者消耗(如图3c所示，光敏三极管BG的有源层308的左侧为正电荷，右侧为负电荷)。
在本申请的另一些实施例中，如图3a，环境光传感器的感光控制电路201还可以包括电阻R，其中，电阻R的第一端C与读取信号线RL相耦接，电阻R的第二端D与第三电压端V3相耦接，此外，第一电压端V1的电压大于第三电压端V3的电压。在本申请的一些实施例中，第三电压端V3可以接地。
如此一来，当选通信号线GL按照一定的频率开启时，第一电压端V1和第三电压端V3之间可以形成电场。在电场的作用下，上述光敏三极管BG的有源层308两端累积的电荷之间可以形成电流(如图3c所示，电流的方向为正电荷指向负电荷的方向)，而从RL端输出电信号。其中，一定的频率例如可以是20Hz，或者根据需求设定，从而达到满足精确度和功耗等要求。在本实施例中，可以通过测试电阻R两端的电压，获取光敏三极管BG的阻抗变化情况。
之后，CPU可以根据获取的阻抗变化情况调整显示屏101的亮度。例如，调整脉冲宽度调制(pulse width modulation，PWM)中的占空比，当需要增加亮度时，可以减少占空比的值，当需要降低亮度时，可以增大占空比的值。由于此为本领域技术人员的现有技术，此处不再赘述。
需要说明的是，CPU内部需要提前设置阻抗和显示屏亮度之间的对应关系。另外，需要在电子设备01处于初始状态时，测试基准电压，作为后期电压测试的基准。具体如下：
初始状态下，第一开关晶体管Tc1的栅极g设置为0偏压，此时，第一开关晶体管Tc1关闭，V1和V2设置为正偏压。需要说明的是，此处V1也可以设定为负偏压，或者根据需求进行设定，本申请对此不做限定。而V2用于在开关晶体管Tc打开的状态下开启光敏三极管BG。
然后，选通信号线GL接收选通信号，给第一开关晶体管Tc1的栅极g加载高电压(以第一开关晶体管Tc1为N型晶体管为例)，使第一开关晶体管Tc1导通，光敏三极管BG在第一开关晶体管Tc1导通后，提供给光敏三极管BG高电压，使光敏三极管BG导通，然后在RL端读出电阻R两端的电压值，作为基准电压。
基于此，由上述可知，光线入射至光敏三极管BG表面时，会转换成电信号，然而，外界光线中的某部分光线进入光敏三极管BG表面后，不容易引起光敏三极管BG 发生光电转化。所以为了解决上述问题。在本申请的一些实施例中，如图3c所示，显示屏101还可以包括第一滤光层305。
该第一滤光层305设置于光敏三极管BG的入光面所在的一侧，且覆盖光敏三极管BG的入光面，第一滤光层305用于对入射至显示屏101的光线进行过滤，从而过滤掉第一光敏三极管BG的非响应波段，提高感光控制电路201光信号采集的准确性。其中，如图3d所示(图3c中W部分对应的放大图)，第一滤光层305可以包括层叠的氧化硅(SiOx)层317、氧化钛(TiOx)层318(图中仅是氧化硅(SiOx)层317和氧化钛(TiOx)318堆叠方式的一种示例)，通过调整氧化硅(SiOx)层317和氧化钛(TiOx)318的层数和折射率，调整滤光层305可过滤的光线波段。例如，当环境光传感器的感光控制电路201中的上述第一光敏元件对红外波段不响应时，可以通过调整氧化硅(SiOx)317层和氧化钛(TiOx)318的层数和折射率，使得第一滤光层305可以过滤掉红外波段的光线。
需要说明的是，本申请对SiOx和TiOx的层数、堆叠方式和折射率不做限定，本领域技术人员可以通过实验、测试、仿真等方式对SiOx和TiOx的层数、堆叠方式和折射率进行设置，只要能够根据光敏三极管BG对光线波长的要求滤除非响应波段即可。
此外，由上述可知，环境光传感器的各个感光控制电路201位于相邻两个AA区之间的非显示区域106，然而AA区由上述可知，能够显示图像，当该AA区显示图像时，该AA区发出的光线，会存在入射至非显示区域106的可能，从而导致影响感光控制电路201的采集结果。为了解决上述问题，显示屏101还可以包括如图3c所示的第一挡光结构304，该第一挡光结构304设置于光敏三极管BG的入光面所在的一侧，且绕光敏三极管BG的一周设置(如图3e所示)，从而可以遮挡亚像素105的光线入射至光敏三极管BG。
在本申请的一些实施例中，光敏三极管BG的入光面可以为如图3e所示的圆形，此时，如图3d所示，光敏三极管BG的入光面的半径R与第一挡光结构304的高度H1的比值为R1/H1＝tanθ 1，当角度θ 1在5°～30°范围内时，可以缩小入射光的入射范围，避免非检测光线的射入，从而使得检测结果更加准确。其中，角度θ 1为入射光与第一光敏元件，例如光敏三极管BG的入光面法线之间的夹角。例如，在本申请的一些实施例中，上述角度θ 1可以为5°、10°、15°、20°或者30°。
需要说明的是，以上述环境光传感器13a包括如图4a所示的四个感光控制电路201为例，上述四个感光控制电路201可以分别设定在如图4a所示的显示屏101的四个顶角对应的位置，此时，相比于如图4c所示相关技术中，电子设备01中设置刘海区100(刘海区100是指在显示屏101的显示区挖一个槽，用于设定其他电子元件，例如，摄像头，home键等)设置一个环境光传感器13a的方式，精确度更高。
或者，在本申请的另一些实施例中，以上述环境光传感器13a包括如图4b所示的八个感光控制电路201，显示屏101的两侧可以分别设置四个感光控制电路201，此时，环境光传感器13a中的各个感光控制电路201既可以测试光线强度，对显示屏101的亮度进行调节，又可以检测手部遮挡位置，从而判断手部所在进行的操作。本申请对感光控制电路201的设定位置不做限定，可根据需求进行设定。
由上述可知，在本申请的实施例中，显示屏101可以包括设置于显示区的多个感光控制电路201和多个亚像素，其中，亚像素具有有效显示区。上述多个感光控制电路201可以构成用于对环境光进行检测的环境光传感器13a。此外，环境光传感器的感光控制电路201包括第一开关晶体管Tc1和与第一开关晶体管Tc1相耦接的第一光敏元件，在此情况下，环境光传感器的感光控制电路201位于相邻两个亚像素的有效显示区之间。基于此，第一光敏元件用于对入射至显示屏101的光线进行光电转换，并生成电信号，第一开关晶体管Tc1用于在处于导通状态时，输出上述第一光敏元件生成的电信号。从而根据获取的电信号对显示屏的亮度进行调节，实现根据光线的亮度调节设备亮度的功能。
此外，由上述可知如图4c所示的相关方案中，环境光传感器13a设置于电子设备01的刘海区100，因此如图4d(沿图4c中的A-A进行剖切得到的剖视图)所示，电子设备01的盖板503下方，在上述刘海区100所在位置因为设置有环境光传感器13a，会使得刘海区100内无法设置亚像素105，导致屏幕的屏占比下降。然而相比于图4c所示的方案，本申请的方案如图4e所示，可以将环境光传感器的感光控制电路201设置于相邻两个像素单元202之间的非有效显示区106内。或者，将环境光传感器的感光控制电路201设置于相邻两个亚像素105之间的非有效显示区106内，因此可以增加盖板503下方能够布局亚像素105的区域的面积，所以可以缩小或者去除显示屏101的刘海区，从而提高电子设备01的屏占比。
以下以图3b为例对制备显示屏101中环境光传感器的感光控制电路201的制作过程的工艺进行说明。
首先，如图5a所示，在第一衬底基板125上，用化学气相沉积(chemical vapor deposition，CVD)的方法形成缓冲层311，之后，用物理气相沉积(physical vapor deposition，PVD)的方法在缓冲层311远离第一衬底基板125的一侧表面形成第一开关晶体管Tc1的有源层314。
然后，在形成有缓冲层311的衬底上，采用CVD工艺形成栅极绝缘层312。该栅极绝缘层312覆盖第一开关晶体管Tc1的有源层314。接下来，在栅极绝缘层312远离第一衬底基板125的一侧表面用PVD工艺，可以同时形成Tc1的第一栅极302和BG的第二栅极307。之后，采用CVD工艺形成覆盖在第一栅极302和第二栅极307上的中间层313。
之后，利用干法刻蚀工艺在第一开关晶体管Tc1的有源层314的两端形成第一凹槽320和第二凹槽321，以及在第二栅极307的一端形成第三凹槽322。使第一凹槽320和第二凹槽321贯穿中间层313和栅极绝缘层312至第一开关晶体管Tc1的有源层314。使第三凹槽322贯穿中间层313至第二栅极307。
接下来，如图5b所示，通过PVD工艺在第一开关晶体管Tc1的有源层314的两端分别形成源极s和漏极d。
由于光敏三极管BG的源极s和漏极d与第一开关晶体管Tc1的源极s和漏极d同层同材料，因此，在制作第一开关晶体管Tc1的源极s和漏极d时，可以使用同一个掩模版，同时制作光敏三极管BG的源极s和漏极d。此外，第一开关晶体管Tc1的漏极d与光敏三极管BG的源极s之间绝缘。构成光敏三极管BG的源极s和漏极d 与第一开关晶体管Tc1的源极s和漏极d的材料可以是铜(Cu)、铝(Al)、金(Au)等金属材料。
需要说明的是，本申请实施例中，“同层”指的是采用同一成膜工艺(例如涂覆工艺)形成用于形成特定图形的膜层，然后利用同一掩模板(mask)通过一次构图工艺形成的层结构。根据特定图形的不同，同一构图工艺可能包括多次曝光、显影或刻蚀工艺，而形成的层结构中的特定图形可以是连续的也可以是不连续的，这些特定图形还可能处于不同的高度或者具有不同的厚度。
之后，在第一开关晶体管Tc1的源极s和漏极d之间形成第一遮光层303a，且第一遮光层303a与第一开关晶体管Tc1的源极s和漏极d相连接，其中，构成该第一遮光层303a的材料可以是黑色吸光材料(例如黑色光刻胶)或者表面镀层绝缘的金属(例如铝(Al)、钛(Ti)等)，可以分别利用光刻或者金属溅射的方法制备。
然后，在光敏三极管BG的源极s和漏极d之间形成光敏三极管BG的有源层308，使得光敏三极管BG的有源层308与光敏三极管BG的源极s和漏极d分别连接，其中，构成光敏三极管BG的有源层308的材料可以是半导体材料，例如多晶硅、非晶硅等，可以通过CVD工艺制备，也可以是有机半导体材料，例如并五苯、异丙基硅炔基并五苯等，可以通过光刻与涂覆方法制备。
接下来，为了保证环境光传感器的感光控制电路201采集光信号的准确性，如图5c所示，可以在光敏三极管BG的有源层308远离第一衬底基板125的一侧表面通过CVD工艺形成第一滤光层305，过滤掉光敏三极管BG非响应波段。
之后，用钝化层310覆盖第一滤光层305，再用干法刻蚀工艺在钝化层310内形成第四凹槽323和第五凹槽324，其中，第四凹槽323和第五凹槽324贯穿钝化层310。
最后，在第四凹槽323和第五凹槽324内形成第一挡光结构304，其中，构成第一挡光结构304的材料可以是黑色吸光材料(例如黑色光刻胶)或者表面镀层绝缘的金属(例如铝(Al)、钛(Ti)等)，同样，可以分别利用光刻或者金属溅射的方法制备。
在本申请的另一些实施例中，环境光传感器的感光控制电路201中的光敏元件可以为光敏二极管VD。
如图6a所示，光敏二极管VD的第一端A与第一开关晶体管Tc1的第一极相耦接，光敏二极管VD的第二端B与读取信号线RL相耦接，此外，第一开关晶体管Tc1的栅极与选通信号线GL相耦接，第一开关晶体管Tc1的第二极与第一电压端V1相耦接。
在本申请的另一些实施例中，环境光传感器的感光控制电路201还可以包括电阻R。
在本示例中，其工作原理与上述方案(光敏元件为光敏三极管BG的方案)基本相同，不同之处在于：上述方案中，需要给第一栅极302加载高电压，使第一开关晶体管Tc1导通，光敏三极管BG在第一开关晶体管Tc1导通后，提供给第二栅极307高电压，使光敏三极管BG导通，即光敏三极管BG是在第一开关晶体管Tc1导通后才导通，此时，光敏三极管BG具有放大电流的作用。而本示例中，光敏二极管VD本来就是导通的，第一栅极302只起到打开第一开关晶体管Tc1的作用，光敏二极管 VD也不具有放大电流的作用，其他过程同上所述，此处不再赘述。
图6b为图1b中沿虚线E-E进行剖切得到的具有上述光敏二极管VD的显示屏101的剖视图，与上述方案不同之处在于：第一开关晶体管Tc1的第一极不与第二栅极307连接，第一开关晶体管Tc1的第一极与光敏二极管VD的A端相连。其他设置方式同上所述，此处不再赘述。
制备上述环境光传感器的感光控制电路201的工艺与当光敏元件为光敏三极管BG的方案的制备工艺的不同之处在于：本示例中没有在第二栅极307的一端形成第三凹槽322，且第一开关晶体管Tc1的第一极与光敏二极管VD的A端相连。其他过程同上所述，此处不再赘述。
需要说明的是，本示例中，第二栅极307不起作用，只是为了与上述当光敏元件为光敏三极管BG时的方案保持一致，如此一来，可使本示例与上述方案使用同一个掩模版，从而方便同时生产上述两种类型的产品，简化工艺。此外，在本示例中也可以没有第二栅极307。
在本申请的另一些实施例中，环境光传感器的感光控制电路201中的光敏元件可以为光敏电阻RG。如图7所示，光敏电阻RG的第一端I与第一开关晶体管Tc1的第一极相耦接，光敏电阻RG的第二端G与读取信号线RL相耦接，此外，第一开关晶体管Tc1的栅极与选通信号线GL相耦接，第一开关晶体管Tc1的第二极与第一电压端V1相耦接。
在本申请的另一些实施例中，环境光传感器的感光控制电路201还可以包括电阻R。其工作原理与当光敏元件为光敏二极管VD的方案相同，此处不再赘述。
此外，图1b中沿虚线E-E进行剖切得到的具有上述光敏电阻RG的感光控制电路201的剖视图与图6b相同，只是将图6b中的光敏二极管VD更换成光敏电阻RG，此处不再赘述。
上述是对显示屏101中环境光传感器的感光控制电路201的制作过程进行的说明，以下对具有该环境光传感器的感光控制电路201的显示屏101的结构进行举例说明。
示例一
本示例中，显示屏101为能够自发光的显示屏101。
如图8a所示，上述能够自发光的显示屏101可以具有阵列排布的多个亚像素(sub pixel)105。此外，上述显示屏101包括位于亚像素105内像素电路104和发光元件2021。像素电路104驱动发光元件2021发光，以使得显示屏101中的各个亚像素105能够按照预设的灰阶进行显示。
在本申请的一些实施例中，上述发光元件2021可以为有机发光二极管(organic light emitting diode，OLED)。或者，在本申请的另一些实施例中，上述发光元件2021可以为微型的发光二极管(light emitting diode，LED)，例如micro LED，或者mini LED。本申请对发光元件2021的类型不做限定，只要发光元件2021能够在像素电路104的驱动下进行发光即可。以下为了方便说明，均是以发光元件2021为OLED为例进行的举例说明。
在此情况下，显示屏101还可以包括如图8b(沿图8a中的虚线O-O进行剖切得到的剖视图)所示的，第一衬底基板125、第二衬底基板127。上述发光元件2021设 置于第一衬底基板125与第二衬底基板127之间。第一衬底基板125用于承载上述发光元件2021，该第二衬底基板127用于防止空气中的水、氧进入发光元件2021，而对发光元件2021产生不良影响。
基于此，在本申请的一些实施例中，上述光线传感器13可以设置于第一衬底基板125靠近第二衬底基板127的一侧。在上述光线传感器13为环境光传感器的情况下，如图8b所示，上述环境光传感器的感光控制电路201可以设置于第一衬底基板125靠近第二衬底基板127的一侧。或者，在本申请的另一些实施例中，上述光线传感器13可以设置于第二衬底基板127远离第一衬底基板125的一侧。在上述光线传感器13为环境光传感器的情况下，可以将环境光传感器的感光控制电路201设置于第二衬底基板127远离第一衬底基板125的一侧。以下描述中会对环境光传感器的感光控制电路201的设置方式进行详细的举例说明。
在本申请的一些实施例中，上述显示屏101可以为柔性显示屏。此时，构成第一衬底基板125的材料可以为柔性材料，例如有机材料。上述第二衬底基板127可以为封装层，该封装层包括用于作为柔性基材的多层有机薄膜封装层，以及用于阻隔水、氧的多层无机薄膜封装层。有机薄膜封装层和无机薄膜封装层交叉设置，且该封装层靠近空气和靠近发光元件2021的一层薄膜为无机薄膜封装层。或者，在本申请的另一些实施例中，当上述显示屏101为硬质显示屏时，构成第一衬底基板125和第二衬底基板127的材料可以均为硬质的透明材料。例如，玻璃、蓝宝石、硬质的树脂材料等。在此情况下，上述第二衬底基板127可以为封装盖板。
此外，显示屏101还可以包括如图8c所示的设置于该第一衬底基板125上的像素界定层(pixel definition layer，PDL)126。上述像素界定层126可以包括多个像素分隔墙116，多个像素分隔墙116横纵交叉围设成多个开口120(图5a中可看出像素分隔墙116为横纵交叉设置)。上述显示屏101的多个发光元件2021中的一个上述发光元件2021可以设置于上述多个开口120中的一个开口120中。
其中，发光元件2021所在位置即为亚像素105的有效显示区(active area，AA)。发光元件2021包括依次远离第一衬底基板125一侧的阳极117、发光层118和阴极119。在此情况下，阴极119和阳极117通电后，发光层118在阴极119和阳极117形成的电场的作用下发出光线。像素分隔墙116用于将相邻的亚像素105隔离开，界定出亚像素105的区域。此外，构成像素分隔墙116的材料可以是氧化硅(SiOx)、氮化硅(SiNx)等，像素分隔墙116可以透过光线。
需要说明的是，从图8c中可以看出，像素电路104在远离第一衬底基板125的一侧设置有像素分隔墙116，即像素分隔墙116覆盖于像素电路104的表面，为了方便说明，在图8a中，像素电路104的表面并未显示出像素分隔墙116。
在此情况下，为了避免感光控制电路201对像素光路的干扰，环境光传感器的感光控制电路201可以位于相邻两个亚像素105的有效显示区之间，由上述可知，有效显示区即为与发光元件2021对应的位置。而为了使环境光传感器的感光控制电路201可以位于相邻两个亚像素105的有效显示区之间，环境光传感器的感光控制电路201在第一衬底基板125上的垂直投影需位于像素分隔墙116在第一衬底基板125上的垂直投影的范围内。
在本申请的一些实施例中，为了将环境光传感器的感光控制电路201设置于第一衬底基板125靠近第二衬底基板127的一侧，如图8d所示，可以直接在第一衬底基板125靠近第二衬底基板127的一侧的表面上制作上述环境光传感器的感光控制电路201中的第一开关晶体管Tc1和第一光敏元件。环境光传感器的感光控制电路201在第一衬底基板125上的垂直投影位于像素分隔墙116在第一衬底基板125上的垂直投影的范围内，具体设置方式同上所述，此处不再赘述。
其中，环境光传感器的感光控制电路201中的第一开关晶体管Tc1和像素电路104中的晶体管504可以共用，也可以不共用(图中显示的为不共用的方案)，可根据需求设定，本申请不做限定。当环境光传感器的感光控制电路201中的第一开关晶体管Tc1和像素电路104中的晶体管504共用时，可以通过像素电路104，既控制像素，又控制环境光传感器的感光控制电路201。当不共用时，可根据需要采集数据的频率，设定第一开关晶体管Tc1通断的频率，从而达到降低功耗的目的。
需要说明的是，上述是以环境光传感器的感光控制电路201中第一光敏元件为光敏三极管BG为例进行的说明，在本示例中，第一光敏元件还可以是光敏二极管VD或者光敏电阻，此时，在显示屏101的上述剖视图中，只是将图8d中光敏三极管BG更换成光敏二极管VD或者光敏电阻，具体设置同上所述，此处不再赘述。
在本申请的另一些实施例中，为了将该环境光传感器的感光控制电路201设置于第二衬底基板127远离第一衬底基板125的一侧，如图8e所示，可以直接在第二衬底基板127远离第一衬底基板125一侧的表面上，制作上述环境光传感器的感光控制电路201中的第一开关晶体管Tc1和第一光敏元件。为了避免环境光传感器的感光控制电路201对像素光路的干扰，环境光传感器的感光控制电路201在第一衬底基板125上的垂直投影需位于像素分隔墙116在第一衬底基板125上的垂直投影的范围内，从而使得环境光传感器的感光控制电路201位于相邻两个亚像素105的有效显示区之间。
在本实施例中，第一光敏元件也可以设置为光敏三极管BG、光敏二极管VD或光敏电阻(图8e中以光敏元件为光敏三极管BG为例)，关于环境光传感器的感光控制电路201的设置方式，相比于上述环境光传感器的感光控制电路201设置于第一衬底基板125靠近发光元件2021的一侧表面的方式，只是将第一衬底基板125换成第二衬底基板127，其他相同，具体设置同上所述，此处不再赘述。
在本申请的另一些实施例中，环境光传感器的感光控制电路201可以设置于像素界定层126远离第一衬底基板125的一侧表面上。为了避免环境光传感器的感光控制电路201对像素光路的干扰，环境光传感器的感光控制电路201在第一衬底基板125上的垂直投影需位于像素分隔墙116在第一衬底基板125上的垂直投影的范围内，从而使得环境光传感器的感光控制电路201位于相邻两个亚像素105的有效显示区之间。
在本实施例中，第一光敏元件也可以设置为光敏三极管BG、光敏二极管VD或光敏电阻，关于环境光传感器的感光控制电路201的设置方式，相比于上述环境光传感器的感光控制电路201设置于第一衬底基板125靠近发光元件2021的一侧表面的方式，只是将第一衬底基板125换成像素界定层126，其他相同，具体设置同上所述，此处不再赘述。
在本申请的另一些实施例中，如图9所示，在显示屏101还包括触控层501，该 触控层501设置于第二衬底基板127远离第一衬底基板125的一侧，此时，环境光传感器的感光控制电路201可以设置于触控层501远离第一衬底基板125的一侧，或者设置于该触控层501远离第一衬底基板125的一侧表面上。为了避免环境光传感器的感光控制电路201对像素光路的干扰，环境光传感器的感光控制电路201在第一衬底基板125上的垂直投影需位于像素分隔墙116在第一衬底基板125上的垂直投影的范围内，从而使得环境光传感器的感光控制电路201位于相邻两个亚像素105的有效显示区之间。
在本实施例中，第一光敏元件也可以设置为光敏三极管BG、光敏二极管VD或光敏电阻，关于环境光传感器的感光控制电路201的设置方式，相比于上述环境光传感器的感光控制电路201设置于第一衬底基板125靠近发光元件2021的一侧表面的方式，只是将第一衬底基板125换成触控层501，其他相同，具体设置同上所述，此处不再赘述。
在本申请的另一些实施例中，如图9所示，显示屏101还可以包括上偏光片502，该上偏光片502设置于第二衬底基板127远离第一衬底基板125的一侧，此时，环境光传感器的感光控制电路201可以设置于上偏光片502远离第一衬底基板125的一侧，或者设置于上偏光片502远离第一衬底基板125的一侧表面上。为了避免环境光传感器的感光控制电路201对像素光路的干扰，环境光传感器的感光控制电路201在第一衬底基板125上的垂直投影需位于像素分隔墙116在第一衬底基板125上的垂直投影的范围内，从而使得环境光传感器的感光控制电路201位于相邻两个亚像素105的有效显示区之间。
在本实施例中，第一光敏元件也可以设置为光敏三极管BG、光敏二极管VD或光敏电阻，关于环境光传感器的感光控制电路201的设置方式，相比于上述环境光传感器的感光控制电路201设置于第一衬底基板125靠近发光元件2021的一侧表面的方式，只是将第一衬底基板125换成上偏光片502，其他相同，具体设置同上所述，此处不再赘述。
在本申请的另一些实施例中，如图9所示，显示屏101还包括盖板503，该盖板503设置于第二衬底基板127远离第一衬底基板125的一侧，此时，环境光传感器的感光控制电路201可以设置于盖板503远离第一衬底基板125的一侧，或者，设置于盖板503远离第一衬底基板125的一侧表面上。为了避免环境光传感器的感光控制电路201对像素光路的干扰，环境光传感器的感光控制电路201在第一衬底基板125上的垂直投影需位于像素分隔墙116在第一衬底基板125上的垂直投影的范围内，从而使得环境光传感器的感光控制电路201位于相邻两个亚像素105的有效显示区之间。
在本实施例中，第一光敏元件也可以设置为光敏三极管BG、光敏二极管VD或光敏电阻，关于环境光传感器的感光控制电路201的设置方式，相比于上述环境光传感器的感光控制电路201设置于第一衬底基板125靠近发光元件2021的一侧表面的方式，只是将第一衬底基板125换成盖板503，其他相同，具体设置同上所述，此处不再赘述。
需要说明的是，由于第一衬底基板125和第二衬底基板127与环境光传感器的感光控制电路201相同，都采用mask工艺制作。因此，当环境光传感器的感光控制电路 201设置于第二衬底基板127远离第一衬底基板125的一侧表面上或者第二衬底基板127远离第一衬底基板125的一侧表面上时，可以方便工艺生产，简化生产过程中的工位变更及设备变更。
示例二
本示例中，显示屏101为液晶显示屏(liquid crystal display，LCD)101。由于液晶显示屏不能自发光，因此需要背光模组(back light unit，BLU)向液晶显示屏101提供光源，以使得液晶显示屏101中如图10a所示的各个亚像素(sub pixel)105能够发光，从而实现图像显示。
上述LCD101可以包括如图10b(沿图10a中的虚线F-F进行剖切得到的剖视图)所示的，第一衬底基板125、彩膜(color filter，CF)基板604、液晶层601、第二衬底基板127，以及依次远离第二衬底基板127的触控层501、上偏光片502以及盖板503。在第一衬底基板125上，每个亚像素105内设置有像素(pixel)电路(图中未示出)。像素电路可以用于控制液晶层601中，与该像素电路所在的亚像素105位置处对应的液晶分子603的偏转角度，从而可以控制BLU提供的光线穿过该亚像素105的量，达到控制亚像素105显示灰阶的目的。
为了避免不同有效显示区AA之间的干扰，不同有效显示区AA之间设置有黑矩阵602，其中，黑矩阵602之间的区域即为有效显示区。此外，第一衬底基板125和第二衬底基板127之间形成有用于容纳液晶层601的液晶盒(cell)。第二衬底基板127用于避免空气中的水、氧进入液晶层601，对液晶分子603产生破坏。构成第一衬底基板125和第二衬底基板127的材料可以均为硬质的透明材料。例如，玻璃、蓝宝石、硬质的树脂材料等。在此情况下，上述第二衬底基板127可以为封装盖板。
在此情况下，在上述电子设备01具有能够根据光线对显示屏101的亮度进行调节的功能时，该电子设备01还包括环境光传感器的感光控制电路201，为了避免环境光传感器的感光控制电路201对像素光路的干扰，环境光传感器的感光控制电路201可以位于相邻两个亚像素105的有效显示区之间。
由上述可知，相邻两个亚像素105的有效显示区之间的位置即为与黑矩阵602对应的位置。而为了使环境光传感器的感光控制电路201可以位于相邻两个亚像素105的有效显示区之间，环境光传感器的感光控制电路201在第二衬底基板127上的垂直投影需位于黑矩阵602在第二衬底基板127上的垂直投影的范围内。
在本申请的一些实施例中，如图10b所示，环境光传感器的感光控制电路201可以设置于第二衬底基板127远离第一衬底基板125的一侧。具体的，如图10c所示，可以直接在第二衬底基板127远离第一衬底基板125一侧的表面上，制作上述环境光传感器的感光控制电路201中的第一开关晶体管Tc1和第一光敏元件。
在本示例中，环境光传感器的感光控制电路201在第二衬底基板127上的垂直投影位于黑矩阵602在第二衬底基板127上的垂直投影的范围内，其他设置同上所述，此处不再赘述。
此外，本示例中，第一光敏元件也可以设置为光敏二极管VD或光敏电阻，此时，在显示屏101的上述剖视图中，只是将图10c中光敏三极管BG更换成光敏二极管VD或者光敏电阻，具体设置同上所述，此处不再赘述。
在本申请的另一些实施例中，如图10d所示，显示屏101还可以包括触控层501，该触控层501设置于第二衬底基板127远离第一衬底基板125的一侧，此时，环境光传感器的感光控制电路201可以设置于触控层501远离第一衬底基板125的一侧表面上。为了避免环境光传感器的感光控制电路201对像素光路的干扰，环境光传感器的感光控制电路201在第二衬底基板127上的垂直投影需位于黑矩阵602在第二衬底基板127上的垂直投影的范围内，从而使得环境光传感器的感光控制电路201位于相邻两个亚像素105的有效显示区之间。
在本示例中，第一光敏元件也可以设置为光敏三极管BG、光敏二极管VD或光敏电阻，关于环境光传感器的感光控制电路201的设置方式，相比于上述将环境光传感器的感光控制电路201设置于第二衬底基板127远离第一衬底基板125的一侧表面上的方式，只是将第二衬底基板127换成触控层501，其他相同，具体设置同上所述，此处不再赘述。
在本申请的另一些实施例中，如图10d所示，显示屏101还可以包括上偏光片502，该上偏光片502设置于第二衬底基板127远离第一衬底基板125的一侧，此时，环境光传感器的感光控制电路201可以设置于上偏光片502远离第一衬底基板125的一侧表面上。为了避免环境光传感器的感光控制电路201对像素光路的干扰，环境光传感器的感光控制电路201在第二衬底基板127上的垂直投影需位于黑矩阵602在第二衬底基板127上的垂直投影的范围内，从而使得环境光传感器的感光控制电路201位于相邻两个亚像素105的有效显示区之间。
在本实施例中，第一光敏元件也可以设置为光敏三极管BG、光敏二极管VD或光敏电阻，关于环境光传感器的感光控制电路201的设置方式，相比于上述将环境光传感器的感光控制电路201设置于第二衬底基板127远离第一衬底基板125的一侧表面上的方式，只是将第二衬底基板127换成上偏光片502，其他相同，具体设置同上所述，此处不再赘述。
在本申请的另一些实施例中，如图10d所示，显示屏101还可以包括盖板503，该盖板503设置于第二衬底基板127远离第一衬底基板125的一侧，此时，环境光传感器的感光控制电路201可以设置于盖板503远离第一衬底基板125的一侧，或者，设置于盖板503远离第一衬底基板125的一侧表面上，且为了避免环境光传感器的感光控制电路201对像素光路的干扰，环境光传感器的感光控制电路201在第二衬底基板127上的垂直投影需位于黑矩阵602在第二衬底基板127上的垂直投影的范围内，从而使得环境光传感器的感光控制电路201位于相邻两个亚像素105的有效显示区之间。
在本实施例中，第一光敏元件也可以设置为光敏三极管BG、光敏二极管VD或光敏电阻，关于第一感光控制电路201的设置方式，相比于上述将环境光传感器的感光控制电路201设置于第二衬底基板127远离第一衬底基板125的一侧表面上的方式，只是将第二衬底基板127换成盖板503，其他相同，具体设置同上所述，此处不再赘述。
需要说明的是，由于像素电路104可以控制液晶层601中液晶分子603的偏转角度，从而使得穿过亚像素105的光线的量不同，达到控制亚像素105显示灰阶的目的， 因此，液晶层下方存在不透光的情况。所以，为了方便制作，当显示屏101为液晶显示屏时，可以采用上述将感光控制电路201设置在液晶层601的上方的方案。
上述是以2a所示的光线传感器13为环境观传感器13a为例进行的说明。在本申请的另一些实施例中，用户在通话过程中，显示屏101贴近人的耳朵，人的视线无法看到显示屏101，而在此期间手机的显示屏101往往会一直亮着，如果用户的通话时间较长，此时，手机产生的功耗较大。
基于此，如图2a中的光线传感器13可以为接近光传感器。在此情况下，如图11a所示，该接近光传感器13b可以包括：发射器131和接收器132，发射器131用于向显示屏101的环境中发射出射光，例如该出射光可以波长为850nm左右的红外光。该出射光用于入射至位于显示屏101显示侧的被测物体。例如该被测物体可以为用户的面部或者手部。接收器132用于接收被测物体反射的反射光。
该电子设备例如还包括处理器，例如上述CPU，该处理器分别和该发射器131以及该接收器132信号连接。该处理器用于根据该发射器131发射的红外光和该接收器132接收的反射光计算该显示屏101与该被测物体之间的距离，例如，通过测量光脉冲从发射到被物体发射回来的时间，通过测时间间隔来计算与物体之间的距离。并根据该显示屏101与该被测物体之间的距离调整显示屏的亮度或控制显示屏的亮灭。
工作时，发射器131发出的红外光经由被测物体反射到接收器132处，处理器根据接收到的红外线光强来判断被测物体距离接近光传感器13b的距离，进而可以实现感知被测物体与显示屏101之间的距离的目的。当用户在通话过程中时，接近光传感器13b可以检测用户身体部位与显示屏101之间的距离，当距离小于预设值时，将屏幕关闭可减小电子设备01的功耗，同时，对于触摸屏手机，可以减少用户耳朵或手对手机屏幕的误操作。
或者，在屏下指纹使用中，接近光传感器13b可以及时确定用户手指与显示屏101的距离，从而可以及时唤醒屏下指纹，为快速启动识别流程做准备，否则使指纹继续处于睡眠状态，进一步降低功耗。
此外，图11a所示的像素单元202的设置方式同上所述，此处不再赘述。对于上述任意一种像素排布方式，任意两个相邻亚像素105之间的间隙可以不用于显示图像。
其中，接近光传感器13b通常采用不透光材料制成，为了避免显示屏101的亚像素和光线传感器13相互遮挡，影响显示屏101的正常显示，或对接近光传感器13b的灵敏度产生干扰，上述接近光传感器13b中的发射器131和接收器132位于该亚像素的间隙中。
该接近光传感器13b可以和像素单元202同层设置，也可以异层设置。本申请中将放置接近光传感器13b的层称为光感器件层，在接近光传感器13b的发射器131和接收器132同层设置时，光感器件层为一层；在接近光传感器13b的发射器131和接收器132不同层设置时，光感器件层为两层。光感器件层可以是一个虚拟的概念，即其设置在其他层(非显示层)内，例如在触控层中，不是一个独立的层；也可以是独立的一个层，例如位于两个层之间。在本申请的一些实施例中，例如可以将接近光传感器13b放置在像素单元202的显示驱动单元同一层上。本申请对该接近光传感器13b的具体位置不做限制，只需使得接近光传感器13b中的发射器131和接收器132在显 示层的垂直投影可以位于该亚像素105的间隙中。
由此，相比于传统的将接近光传感器13b设置于非显示区域的方式，由于该接近光传感器13b设置于亚像素105下发的间隙中，可以缩小非显示区域，从而提高电子设备的屏占比。同时，可以避免光线传感器，例如上述接近光传感器13b遮挡亚像素105出射的光线的光路。
当然，在本申请其他的实现方式中，接近光传感器13b也可以由透明材料制成，在此情况下，可以将接近光传感器13b设置在亚像素上方的叠层中，且上述接近光传感器13b中的发射器131和接收器132在显示区域1001的投影可以和亚像素105在显示区域1001的投影部分重合或全部重合，但接近光传感器13b和亚像素105独立，能降低传感器(器件本身以及传感器控制电路)阻挡的光量，这样也能减小接近光传感器13b对亚像素105出射的光线光路的影响，在实现光线检测功能的同时不降低屏幕显示效果。这些均属于本申请的保护范围。
本申请实施例对该接近光传感器13b的具体位置和数量不做限制，在本申请另一种实现方式中，接近光传感器13b的数量为四个，上述四个接近光传感器13b可以分别设定在如图11b所示的显示屏101的四个顶角对应的位置。
或者，在本申请的另一些实施例中，如图11c所示，接近光传感器13b的数量为八个，显示屏101的两侧可以分别设置四个接近光传感器13b，此时，接近光传感器13b既可以测试光线强度，对显示屏101的亮度进行调节，又可以检测手部遮挡位置，从而判断手部所在进行的操作。例如根据通话时用户的人脸与手机的距离确认是否需要熄屏，以及用户使用时的握姿确认是在跑步还是正常使用；还可以判断手机是否处于局部被遮挡状态用于匹配指纹传感器和/或前置摄像头的使用等。
本申请实施例对该发射器131的具体结构不做限制。在本申请一种实现方式中，所述发射器131包括如图13所示的发射控制电路2011，以及与发射控制电路2011连接的发光元件2012，发射控制电路2011用于接收外围电路发送的电信号，并根据该电信号触发发光元件2012，使得发光元件2012发射上述出射光，例如红外光。
该发射控制电路2011可以采用第三开关晶体管，其中，第三开关晶体管可以为薄膜晶体管(thin film transistor，TFT)或者MOS管。以下为了方便说明，均是以第三开关晶体管为TFT为例进行的说明。
需要说明的是，本申请实施例中，第三开关晶体管可以包括源极s，第三栅极(gate，g)309a、开关晶体管的有源层314，漏极d。
第三开关晶体管的源极s与该第三开关晶体管的有源层314的一端连接，第三开关晶体管的漏极d和第三开关晶体管的有源层314的另一端连接，第三栅极309a用于接收外围电路发送的电信号，该电信号可以控制第三开关晶体管的导通。
为了避免发射控制电路2011受到外界光线的破坏，显示屏101还可以包括第二遮光层303b，其中，第二遮光层303b位于第三开关晶体管的第三栅极309a远离第三开关晶体管的有源层314的一侧，且第二遮光层303b覆盖第三开关晶体管的第三栅极309a。
基于此，在本申请的一些实施例中，该发光元件2012具有如图13所示的发光层118，该发光层118一端与第三开关晶体管的漏极d连接，另一端连接有电极17。
在此情况下，第三栅极309a控制第三开关晶体管的有源层314导通时，可以向发光层118一侧的第三开关晶体管的漏极d通电。此外，再向电极17通电，在电场作用下，第三开关晶体管的漏极d和电极17中的载流子在发光层118中相遇，并激发出光子，从而使得发光层118发光。该发光层118可以采用PN结的发光方式，也可以采用PIN结构，该发光层118例如可以发射红外光。
本申请中以发光元件2012采用PN结的发光方式为例，其中，发射控制电路2011和发光元件2012电连接，是指发光元件2012的发光层118的一端与第三开关晶体管的漏极d连接。
该发光元件2012的红外发射材料可以采用砷化镓(GaAs)、砷铝化镓(GaAlAs)；也可以采用有机红外发射涂料，例如掺杂的荧光材料，发射的波段范围可以是600-1000nm。
工作时，发射控制电路2011用于接收外围电路发送的电信号，并根据该电信号触发所述发光元件2012，使得发光元件2012发射红外光。
此外，发光元件2012的发射强度因发射方向而异。需要说明的是，发射方向为发射光线和法线的夹角。
当方向角度为零度时，其发射强度定义为100％，当方向角度越大时，其发射强度相对的减少。本申请实施例中，接近光传感器13b的检测距离通常为10-20cm，需使得发光元件2012发射的红外光在该检测距离内发射强度大于预设值。为了解决上述问题，显示屏101还可以包括如图13所示的第二挡光结构209，该第二挡光结构209设置于发光元件2012的出光面所在的一侧，且绕发光元件2012一周设置(如图14b所示)，从而可以减小方向角，提高发光单元的发射强度。
本申请对该第二挡光结构的具体结构不做限制。在本申请的一些实施例中，发光元件2012的出光面可以为如图14b所示的圆形，此时，如图14a所示，发光元件2012的出光面的半径R2与第二挡光结构209的高度H2的比值为R2/H2＝tanθ 2，当角度θ 2在5°～45°范围内时，可以缩小发射光的出射范围，使得光线更集中，从而使得检测结果更加准确。其中，角度θ 2为发射光与发光元件的出光面法线之间的夹角。例如，在本申请的一些实施例中，上述角度θ 2可以为5°、10°、15°、20°、30°或45°。
本申请实施例对接收器132的具体结构不做限制。在本申请一种实现方式中，如图15所示，接收器132包括感光控制电路，例如第二开关晶体管2021和与该第二开关晶体管2021连接的感光单元，例如第二光敏元件2022。
第二光敏元件2022用于接收被测物体反射的反射光，并进行光电转换，生成电信号，第二开关晶体管2021用于在处于导通状态时，输出第二光敏元件2022生成的电信号。第二光敏元件2022可以为上述光敏三极管、光敏电阻或者光敏二极管。该第二开关晶体管2021例如可以采用和上述发射控制电路2011相同的结构。
如图15所示，该第二光敏元件2022可以为光敏三极管BG。当给第二开关晶体管2021的第四栅极309b加载高电压，使第二开关晶体管2021导通，光敏三极管BG在第二开关晶体管2021导通后，提供给光敏三极管BG的第五栅极309c高电压，使光敏三极管BG导通。电极21工作时，当光线射至第二光敏元件2022的表面时，会导致第二光敏元件2022中的感光层26发生光电转换效应，使第二光敏元件2022的感光 层26的阻抗发生变化，而在第二光敏元件2022的感光层26的两端形成电荷的累积或者消耗(如图15所示，感光层26的左侧为正电荷，右侧为负电荷)。
在电场的作用下，上述第二光敏元件2022感光层26两端累积的电荷之间可以形成电流(如图15所示，电流的方向为正电荷指向负电荷的方向)，当第二开关晶体管2021打开时，第二光敏元件2022输出电信号。
基于此，由上述可知，光线入射至第二光敏元件2022表面时，会转换成电信号，然而，外界光线中的非目标波段的光线进入第二光敏元件2022表面后，容易引起第二光敏元件2022误响应。所以为了解决上述问题。在本申请的一些实施例中，如图15所示，显示屏101还可以包括第二滤光层25。
该第二滤光层25设置于第二光敏元件2022的入光面所在的一侧，且覆盖第二光敏元件2022的入光面，第二滤光层25用于对入射至显示屏101的光线进行过滤，从而过滤掉第二光敏元件2022的非响应波段，提高感光控制电路2021光信号采集的准确性。
其中，第二滤光层25可以包括层叠的氧化硅(SiOx)层、氧化钛(TiOx)层，通过调整氧化硅(SiOx)层和氧化钛(TiOx)的层数和折射率，调整第二滤光层25可过滤的光线波段。例如，第二光敏元件2022对除了红外波段以外的波段不响应时，可以通过调整氧化硅(SiOx)层和氧化钛(TiOx)的层数和折射率，使得第二滤光层25可以过滤掉非目标波段的光线，从而使得被测物体反射的红外光能够透过第二滤光层25入射至第二光敏元件2022。
需要说明的是，本申请对SiOx和TiOx的层数、堆叠方式和折射率不做限定，本领域技术人员可以通过实验、测试、仿真等方式对SiOx和TiOx的层数、堆叠方式和折射率进行设置，只要能够根据第二光敏元件2022对光线波长的要求滤除非响应波段即可。
此外，由上述可知，第二光敏元件2022的各个感光单元2022位于相邻两个亚像素之间的间隙中，然而亚像素组成的像素单元由上述可知，能够显示图像，当该像素单元显示图像时，该像素单元发出的光线，会存在入射至亚像素之间的间隙的可能，从而导致影响第二光敏元件2022的采集结果。为了解决上述问题，显示屏101还可以包括如图16a所示的第三挡光结构208，该第三挡光结构208设置于第二光敏元件2022的入光面所在的一侧，且绕第二光敏元件2022的一周设置(如图16b所示)，从而可以遮挡亚像素的光线入射至第二光敏元件2022。
在本申请的一些实施例中，第二光敏元件2022的入光面可以为如图16b所示的圆形，此时，如图16a所示，第二光敏元件2022的入光面的半径R3与第三挡光结构208的高度H3的比值为R3/H3＝tanθ 3，当角度θ 3在5°～45°范围内时，可以缩小入射光的入射范围，避免非检测光线的射入，从而使得检测结果更加准确。其中，角度θ 3为入射光与感光元件，例如第二光敏元件2022的入光面法线之间的夹角。例如，在本申请的一些实施例中，上述角度θ 3可以为5°、10°、15°、20°、30°或45°。
以下以图12为例对制备显示屏101中接近光传感器13b的制作过程的工艺进行说明。本实施例中，该接近光传感器13b包括发射器131和接收器132，该发射器发射器131和接收器132集成在一起，在基板上正常进行半导体工艺的沉积或者溅射镀膜 就能进行制备。
首先，在第一衬底基板125(也可以称为衬底，例如柔性基板如聚酰亚胺PI基板，或硬性基板如玻璃基板)上，用化学气相沉积(chemical vapor deposition，CVD)的方法形成缓冲层311，之后，用物理气相沉积(physical vapor deposition，PVD)的方法在缓冲层311远离第一衬底基板125的一侧表面形成发射控制电路2011(例如第三开关晶体管)和感光控制电路(例如，第二开关晶体管2021)的有源层314。
然后，在形成有缓冲层311的衬底上，采用CVD工艺形成栅极绝缘层312。该栅极绝缘层312覆盖上述第三开关晶体管和第二开关晶体管2021的有源层314。接下来，在栅极绝缘层312远离第一衬底基板125的一侧表面用PVD工艺，可以同时形成发射控制电路2011(例如第三开关晶体管)的第三栅极309a和感光控制电路(例如，第二开关晶体管2021)的第四栅极309b，以及第二光敏元件2022的第五栅极309c。之后，采用CVD工艺形成覆盖在第三栅极309a、第四栅极309b以及第五栅极309c的中间层313。
之后，分别形成发射控制电路2011，例如第三开关晶体管的源极s、漏极d，以及发光元件2012的电极17、第二光敏元件2022的电极21，以及第二开关晶体管2021的源极s和漏极d。
接着，在第三开关晶体管的源极s、漏极d之间形成第二遮光层303b，且第二遮光层303b与第三开关晶体管的源极s、漏极d相连接。此外，在第二开关晶体管2021的源极s和漏极d之间形成第三遮光层303c。其中，构成该第二遮光层303b和第三遮光层303c的材料可以是黑色吸光材料(例如黑色光刻胶)或者表面镀层绝缘的金属(例如铝(Al)、钛(Ti)等)，可以分别利用光刻或者金属溅射的方法制备。
然后，分别形成第二光敏元件2022的感光层26和发光元件2012的发光层118。其中，构成感光层26和发光层118的材料可以是传统的半导体材料，例如多晶硅、非晶硅等，可以通过CVD工艺制备，也可以是有机半导体材料，例如并五苯、异丙基硅炔基并五苯等，可以通过光刻与涂覆方法制备。
接下来，为了保证第二光敏元件2022采集光信号的准确性，如图12所示，可以在感光层26表面通过CVD工艺形成第二滤光层25，过滤掉非响应波段。
之后，用钝化层310覆盖第二滤光层25，并在钝化层310上形成第三挡光结构208和第二挡光结构209，其中，构成第三挡光结构208和第二挡光结构209的材料可以是黑色吸光材料(例如黑色光刻胶)或者表面镀层绝缘的金属(例如铝(Al)、钛(Ti)等)，同样，可以分别利用光刻或者金属溅射的方法制备。
由上述可知，在本申请的实施例中，显示屏101可以包括设置于显示区的多个接近光传感器和多个像素单元。在此情况下，接近光传感器位于相邻两个像素单元的有效显示区之间。基于此，发射器131包括：发射控制电路2011，以及与所述发射控制电路2011连接的发光元件2012，发射控制电路2011用于接收外围电路发送的电信号，并根据电信号触发发光元件2012，使得发光元件2012发射红外光。接收器132包括第二开关晶体管2021和与第二开关晶体管2021连接的第二光敏元件2022。第二光敏元件2022用于接收被测物体001反射的反射光，并进行光电转换，生成电信号。第二开关晶体管2021用于读取所述电信号，并输出所述电信号。从而可以根据获取的电信 号对显示屏101的亮度进行调节，防止用户误触，同时，相比与传统的将接近光传感器设置于刘海区的方式，由于该接近光传感器设置于显示屏101的有效显示区内，可以无需专门设置凹槽，因此，可以缩小显示屏101的刘海区域，从而提高电子设备01的屏占比。
上述是对接近光传感器13b具体结构的说明，以下以下对具有该感光控制电路2021的显示屏101的结构进行举例说明。
示例三
本示例中，显示屏101为能够自发光的显示屏。
如图17所示，上述能够自发光的显示屏可以具有阵列排布的多个亚像素。此外，上述显示屏101包括位于亚像素内的像素电路和发光元件。像素电路驱动发光元件发光，以使得显示屏101中的各个亚像素能够按照预设的灰阶进行显示。
在本申请的一些实施例中，上述发光元件可以为OLED器件。或者，在本申请的另一些实施例中，上述发光元件可以为微型的LED，例如micro LED，或者mini LED。本申请对发光元件的类型不做限定，只要发光元件能够在像素电路的驱动下进行发光即可。以下为了方便说明，均是以发光元件为OLED为例进行的举例说明。
在此情况下，显示屏101还可以包括如图17所示的，第一衬底基板125以及设置于该第一衬底基板125上的多个发光元件2021。
此外，如图17所示，显示屏101还可以包括第二衬底基板127。该第二衬底基板127设置于发光元件远离第一衬底基板125的一侧，用于防止空气中的水、氧进入发光元件，而对发光元件产生不良影响。
基于此，在本申请的一些实施例中，上述显示屏101可以为柔性显示屏101。此时，构成第一衬底基板125的材料可以为柔性材料，例如有机材料。上述第二衬底基板127可以为封装层，该封装层包括用于作为柔性基材的多层有机薄膜封装层，以及用于阻隔水、氧的多层无机薄膜封装层。有机薄膜封装层和无机薄膜封装层交叉设置，且该封装层靠近空气和靠近发光元件的一层薄膜为无机薄膜封装层。或者，在本申请的另一些实施例中，当上述显示屏101为硬质显示屏101时，构成第一衬底基板125和第二衬底基板127的材料可以均为硬质的透明材料。例如，玻璃、蓝宝石、硬质的树脂材料等。在此情况下，上述第二衬底基板127可以为封装盖板。
在此情况下，为了避免光线传感器13对像素光路的干扰，光线传感器13可以位于相邻两个亚像素的有效显示区之间，由上述可知，有效显示区即为与发光元件对应的位置。而为了使光线传感器13可以位于相邻两个亚像素的有效显示区之间，光线传感器13在所述第二衬底基板127上的投影位于所述像素单元在所述第二衬底基板127上的投影的间隙中。
在本申请的一些实施例中，接近光传感器13b可以设置于图17中第一衬底基板125靠近发光元件的一侧表面上。
其中，接近光传感器13b中的开关晶体管和像素电路中的晶体管可以共用，也可以不共用(图中显示的为不共用的方案)，可根据需求设定，本申请不做限定。当接近光传感器13b中的开关晶体管和像素电路中的晶体管共用时，可以通过像素电路，既控制像素，又控制接近光传感器13b。当不共用时，可根据需要采集数据的频率， 设定开关晶体管通断的频率，从而达到降低功耗的目的。光线传感器的发射器和像素单元在同一层时，可以通过限制发射器的发射角度，有效格挡发射光对OLED的TFT电路的影响；也可以选择发射波长略长的红外发射器作为光源(例如～1300nm附近)，不会激发现有OLED的TFT电路。目前常规屏幕的亚像素之间空隙有20-30um，金属走线可以做到20um的开口避让以用于屏内的感光单元；而接近光传感器中的接收器(感光单元)只需要保证最小20um的感光面积即可正常进行检测功能；如果需要提升灵敏度，可以将接收器的数量增加和/或增加感光面积。
在本申请的另一些实施例中，接近光传感器13b可以设置于第二衬底基板127远离第一衬底基板125的一侧表面上。为了避免光线传感器13对像素光路的干扰，所述发射器131和所述接收器132在所述第二衬底基板127上的投影位于所述像素单元在所述第二衬底基板127上的投影的间隙中。当然也可以采用透光性好、甚至是透明的光线传感器，以进一步减小对显示效果的影响。
在本实施例中，第二光敏元件2022可以为光敏三极管、光敏二极管VD或光敏电阻，关于接近光传感器13b的设置方式，相比于上述接近光传感器13b设置于第一衬底基板125靠近发光元件的一侧表面的方式，只是将第一衬底基板125换成第二衬底基板127，其他相同，具体设置同上所述，此处不再赘述。
在本申请的另一些实施例中，接近光传感器13b可以设置于发光元件2021远离第一衬底基板125的一侧表面上。为了避免接近光传感器13b对像素光路的干扰，接近光传感器13b在第一衬底基板125上的垂直投影需位于像素单元在所述第一衬底基板125上的投影的间隙中。
在本实施例中，第二光敏元件2022可以为光敏三极管、光敏二极管VD或光敏电阻，关于接近光传感器13b的设置方式，相比于上述接近光传感器13b设置于第一衬底基板125靠近发光元件的一侧表面的方式，只是将第一衬底基板125换成发光元件2021，其他相同，具体设置同上所述，此处不再赘述。
在本申请的另一些实施例中，如图17所示，显示屏101还可以包括触控层501，该触控层501设置于第二衬底基板127远离第一衬底基板125的一侧，此时，接近光传感器13b可以设置于触控层501。为了避免接近光传感器13b对像素光路的干扰，该接近光传感器13b中的发射器131和接收器132在所述第二衬底基板127上的投影位于像素单元在第二衬底基板127上的投影的间隙中。
在本实施例中，第二光敏元件2022可以为光敏三极管、光敏二极管VD或光敏电阻，关于接近光传感器13b的设置方式，相比于上述接近光传感器13b设置于第一衬底基板125靠近发光元件2021的一侧表面的方式，只是将第一衬底基板125换成触控层104，其他相同，具体设置同上所述，此处不再赘述。
在本申请的另一些实施例中，如图17所示，显示屏101还可以包括上偏光片502，该上偏光片502设置于第二衬底基板127远离第一衬底基板125的一侧，此时，接近光传感器13b可以设置于上偏光片502远离第一衬底基板125的一侧表面上。为了避免接近光传感器13b对像素光路的干扰，接近光传感器13b中的发射器131和接收器132在第二衬底基板127上的投影位于像素单元在第二衬底基板127上的投影的间隙中。
在本实施例中，第二光敏元件2022可以为光敏三极管、光敏二极管VD或光敏电阻，关于接近光传感器13b的设置方式，相比于上述接近光传感器13b设置于第一衬底基板125靠近发光元件的一侧表面的方式，只是将第一衬底基板125换成上偏光片502，其他相同，具体设置同上所述，此处不再赘述。
在本申请的另一些实施例中，如图17所示，显示屏101还包括盖板503，该盖板503设置于第二衬底基板127远离第一衬底基板125的一侧，此时，接近光传感器13b可以设置于盖板503靠近第一衬底基板125的一侧表面上。为了避免接近光传感器13b对像素光路的干扰，接近光传感器13b中的发射器131和接收器132在第二衬底基板127上的投影位于像素单元在第二衬底基板127上的投影的间隙中。
其中，需要说明的是，盖板503上例如还设有：多个层叠设置的光学膜层，在本申请另一些实施例中，还可以将接近光传感器13b设置在盖板503和该光学膜层之间，这些均属于本申请的保护范围。
在本实施例中，第二光敏元件2022可以为光敏三极管、光敏二极管VD或光敏电阻，关于接近光传感器13b的设置方式，相比于上述接近光传感器13b设置于第一衬底基板125靠近发光元件2021的一侧表面的方式，只是将第一衬底基板125换成盖板503，其他相同，具体设置同上所述，此处不再赘述。
需要说明的是，在第一衬底基板125上制作接近光传感器13b时，其制备工艺和在第一衬底基板125上制作像素电路中的晶体管的制备工艺相同。在第一衬底基板125上可以同时制作该接近光传感器13b和像素电路，可以方便工艺生产，简化生产过程中的工位变更及设备变更。
上述实施例中接近光传感器13b中的发射器131和接收器132集成在一起，设置在显示屏101的同一层，在本申请其他的实现方式中，也可以将接近光传感器13b中的发射器131和接收器132设置在显示屏101的不同层。
示例性的，可以将发射器131设置在第二衬底基板127上，并将接收器132设置在第一衬底基板125上，发射器131和接收器132在第一衬底基板125上的投影分离。
当然，也可以将发射器131设置在第二衬底基板127上，并将接收器132设置在第一衬底基板125上，所述发射器131和所述接收器132在第一衬底基板125上的投影分离。
此外，当发射器131和接收器132在竖直方向的投影重叠时，被测物体001返回的光会被发射器131所阻挡，影响检测灵敏度。
本申请实施例中，发射器131和接收器132在第一衬底基板125上的投影分离，也即发射器131和所述接收器132在竖直方向(显示屏的厚度方向)不重合，可以避免发射器131和接收器132之间相互干扰，提高光线传感器13的检测灵敏度。
需要说明的是，由于第一衬底基板125在第二衬底基板127下方，将发射器131设置在第一衬底基板125上，将接收器132设置在第二衬底基板127上时，会使得发射器131发出的部分红外光直接被接收器132接收，影响检测的灵敏度，因此，将发射器131设置在接收器132所在层上方，可进一步提高检测灵敏度，所以，在设置光线传感器13时，将发射器131设置在接收器132所在层的上方为优选方案。
上述仅以分别将发射器131和接收器132设置在第一衬底基板125和第二衬底基 板127上为例进行说明，在本申请其他的实现方式中，还可以将发射器131和接收器132分别设置在触控层501、上偏光片502、盖板503等不同的层。只需使得发射器131所在层高于接收器132所在层即可，这些均属于本申请的保护范围。
示例四
本示例中，显示屏101为LCD。由于LCD不能自发光，因此需要BLU109向液晶显示屏提供光源，以使得液晶显示屏中的各个亚像素(sub pixel)能够发光，从而实现图像显示。
上述LCD可以包括如图18所示的下偏光片110、第一衬底基板125、彩膜基板604和液晶层601。在第一衬底基板125上，每个亚像素内设置有像素(pixel)电路(图中未示出)。像素电路可以用于控制液晶层601中，与该像素电路所在的亚像素位置处对应的液晶分子的偏转角度，从而可以控制BLU提供的光线穿过该亚像素的量，达到控制亚像素显示灰阶的目的。
此外，LCD还可以包括第二衬底基板127，用于避免空气中的水、氧进入液晶层601，对液晶分子产生破坏。
基于此，在本申请的一些实施例中，发光元件构成第一衬底基板125和第二衬底基板127的材料可以均为硬质的透明材料。例如，玻璃、蓝宝石、硬质的树脂材料等。在此情况下，上述第二衬底基板127可以为封装盖板。
在此情况下，在上述电子设备01具有能够根据光线对显示屏101的亮度进行调节的功能时，该电子设备01还包括光接近光传感器13b，为了避免光线传感器13对像素光路的干扰，接近光传感器13b中的发射器131和接收器132在第一衬底基板125上的投影位于像素单元在所述第一衬底基板125上的投影的间隙中。
在本申请的一些实施例中，如图7所示，光线传感器13可以设置于第二衬底基板127远离第一衬底基板125的一侧表面上。
在本示例中，接近光传感器13b中的发射器131和接收器132在第二衬底基板127上的投影位于像素单元在所述第二衬底基板127上的投影的间隙中。
此外，本示例中，第二光敏元件2022可以为光敏三极管、光敏二极管VD或光敏电阻，此时，在显示屏101的上述剖视图中，只是将图7中第二光敏元件2022更换成光敏二极管VD或者光敏电阻，具体设置同上所述，此处不再赘述。
在本申请的另一些实施例中，如图18所示，显示屏101还可以包括触控层501，该触控层501设置于第二衬底基板127远离第一衬底基板125的一侧，此时，接近光传感器13b可以设置于触控层501。为了避免接近光传感器13b对像素光路的干扰，接近光传感器13b中的发射器131和接收器132在第二衬底基板127上的投影位于像素单元在第二衬底基板127上的投影的间隙中。
在本示例中，第二光敏元件2022可以为光敏三极管、光敏二极管VD或光敏电阻，关于接近光传感器13b的设置方式，相比于上述将接近光传感器13b设置于第二衬底基板127远离第一衬底基板125的一侧表面上的方式，只是将第二衬底基板127换成触控层501，其他相同，具体设置同上所述，此处不再赘述。
在本申请的另一些实施例中，如图18所示，显示屏101还可以包括上偏光片502，该上偏光片502设置于第二衬底基板127远离第一衬底基板125的一侧，此时，接近 光传感器13b可以设置于上偏光片502远离第一衬底基板125的一侧表面上。为了避免接近光传感器13b对像素光路的干扰，接近光传感器13b中的发射器131和接收器132在第二衬底基板127上的投影位于像素单元在所述第二衬底基板127上的投影的间隙中。
在本实施例中，第二光敏元件2022可以为光敏三极管、光敏二极管VD或光敏电阻，关于接近光传感器13b的设置方式，相比于上述将接近光传感器13b设置于第二衬底基板127远离第一衬底基板125的一侧表面上的方式，只是将第二衬底基板127换成上偏光片，其他相同，具体设置同上所述，此处不再赘述。
在本申请的另一些实施例中，如图18所示，显示屏101还可以包括盖板503，该盖板503设置于第二衬底基板127远离第一衬底基板125的一侧，此时，接近光传感器13b光线传感器13可以设置于盖板503远离第一衬底基板125的一侧表面上，且为了避免接近光传感器13b对像素光路的干扰，接近光传感器13b中的发射器131和接收器132在第二衬底基板127上的投影位于像素单元在第二衬底基板127上的投影的间隙中。
在本实施例中，第二光敏元件2022可以为光敏三极管、光敏二极管VD或光敏电阻，关于接近光传感器13b的设置方式，相比于上述将接近光传感器13b设置于第二衬底基板127远离第一衬底基板125的一侧表面上的方式，只是将第二衬底基板127换成盖板503，其他相同，具体设置同上所述，此处不再赘述。
需要说明的是，由于像素电路可以控制液晶层601中液晶分子的偏转角度，从而使得穿过亚像素的光线的量不同，达到控制亚像素显示灰阶的目的，因此，液晶层601601下方存在不透光的情况。所以，为了方便制作，当显示屏101为液晶显示屏时，本申请优先考虑将接近光传感器13b设置在液晶层601的上方。
上述实施例中接近光传感器13b中的发射器131和接收器132集成在一起，设置在显示屏101的同一层，在本申请其他的实现方式中，也可以将接近光传感器13b椎间盘买个的发射器131和接收器132设置在显示屏101的不同层。
示例性的，可以将接收器132设置在所述第二衬底基板127上，并将发射器131设置在所述触控层501上。此外，当发射器131和接收器132在竖直方向的投影重叠时，被测物体返回的光会被发射器131所阻挡，影响检测灵敏度。
本申请实施例中，发射器131和接收器132在第一衬底基板125上的投影分离，也即所述发射器131和接收器132在竖直方向不重合，可以避免发射器131和接收器132之间相互干扰，提高接近光传感器13b的检测灵敏度。
需要说明的是，将发射器131设置在接收器132所在层的下方时，会使得发射器131发出的部分红外光直接被接收器132接收，影响检测的灵敏度，因此，将发射器131设置在接收器132所在层上方，可进一步提高检测灵敏度，所以，在设置接近光传感器13b时，将发射器131设置在接收器132所在层的上方为优选方案。
在本申请其他的实现方式中，可以将发射器131和接收器132分别设置在第二衬底基板127、触控层501、上偏光片502、盖板503等不同的层上。只需使得发射器131所在层高于接收器132所在层即可，这些均属于本申请的保护范围。
上述是以显示屏101中的光线传感器30可以为环境光传感器13a，或者该光线传 感器30可以为接近光传感器13b为例进行的说明。在本申请的另一些实施例中，该显示屏101可以如图19所示即包括上述环境光传感器13a也可以包括上述接近光传感器13b。该环境光传感器13a和接近光传感器13b的制作过程同上所述，此处不再赘述。
本申请实施例还提供一种电子设备，该电子设备包括如上所述的任意一种显示屏，该电子设备具有与前述实施例提供的显示屏相同的技术效果，此处不再赘述。
以上所述，仅为本申请的具体实施方式，但本申请的保护范围并不局限于此，任何在本申请揭露的技术范围内的变化或替换，都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应以所述权利要求的保护范围为准。

Claims (28)

  1. 一种显示屏，其特征在于，所述显示屏具有显示区；所述显示屏包括：
    多个亚像素，设置于所述显示区，所述亚像素具有有效显示区；
    至少一个光线传感器，设置于所述显示区，所述光线传感器位于相邻的所述亚像素的所述有效显示区之间。
  2. 根据权利要求1所述的显示屏，其特征在于，所述至少一个光线传感器包括环境光传感器；所述环境光传感器包括：
    第一光敏元件，用于对入射至所述显示屏的环境光线进行光电转换，并生成电信号；
    第一开关晶体管，与所述第一光敏元件相耦接，所述第一开关晶体管用于在处于导通状态时，输出所述第一光敏元件生成的电信号。
  3. 根据权利要求1或2所述的显示屏，其特征在于，所述至少一个光线传感器包括接近光传感器；所述接近光传感器包括：
    发射器，用于向所述显示屏的显示侧发射出射光，所述出射光用于入射至位于所述显示屏显示侧的被测物体；
    接收器，用于接收所述被测物体反射的反射光。
  4. 根据权利要求1-3任一项所述的显示屏，其特征在于，所述显示屏还包括：
    第一衬底基板；
    第二衬底基板；
    多个发光元件，设置于所述第一衬底基板和所述第二衬底基板之间。
  5. 根据权利要求1-3任一项所述的显示屏，其特征在于，所述显示屏还包括：
    第一衬底基板；
    第二衬底基板；
    液晶层，设置于所述第一衬底基板和所述第二衬底基板之间。
  6. 根据权利要求4或5所述的显示屏，其特征在于，
    所述光线传感器设置于所述第一衬底基板靠近所述第二衬底基板的一侧；
    或者，所述光线传感器设置于所述第二衬底基板远离所述第一衬底基板的一侧。
  7. 根据权利要求4或5所述的显示屏，其特征在于，所述至少一个光线传感器包括接近光传感器，所述接近光传感器包括发射器和接收器；所述发射器用于向所述显示屏的显示侧发射出射光，所述出射光用于入射至位于所述显示屏显示侧的被测物体；所述接收器用于接收所述被测物体反射的反射光；
    所述发射器设置于所述第一衬底基板靠近所述第二衬底基板的一侧，所述接收器设置于所述第二衬底基板远离所述第一衬底基板的一侧；
    或者，
    所述发射器设置于所述第二衬底基板远离所述第一衬底基板的一侧，所述接收器设置于所述第一衬底基板靠近所述第二衬底基板的一侧。
  8. 根据权利要求4所述的显示屏，其特征在于，所述显示屏还包括：
    像素界定层，设置于所述第一衬底基板上，且包括多个像素分隔墙；所述多个像素分隔墙横纵交叉围设成多个开口；一个所述发光元件位于一个所述开口内；
    其中，所述光线传感器在所述第一衬底基板上的垂直投影位于所述像素分隔墙在所述第一衬底基板上的垂直投影的范围内。
  9. 根据权利要求8所述的显示屏，其特征在于，所述光线传感器设置于所述像素界定层远离所述第一衬底基板的一侧。
  10. 根据权利要求5所述的显示屏，其特征在于，所述显示屏还包括：
    黑矩阵，位于所述第二衬底基板靠近所述第一衬底基板的一侧；
    其中，所述光线传感器在所述第二衬底基板上的垂直投影位于所述黑矩阵在所述第二衬底基板上的垂直投影的范围内。
  11. 根据权利要求4或10所述的显示屏，其特征在于，所述显示屏还包括触控层；所述触控层设置于所述第二衬底基板远离所述第一衬底基板的一侧；所述光线传感器设置于所述触控层远离所述第一衬底基板的一侧。
  12. 根据权利要求4或10所述的显示屏，其特征在于，所述显示屏还包括上偏光片；所述上偏光片设置于所述第二衬底基板远离所述第一衬底基板的一侧；所述光线传感器设置于所述上偏光片远离所述第一衬底基板的一侧表面上。
  13. 根据权利要求4或10所述的显示屏，其特征在于，所述显示屏还包括盖板；所述盖板设置于所述第二衬底基板远离所述第一衬底基板的一侧；所述光线传感器设置于所述盖板远离所述第一衬底基板的一侧表面上。
  14. 根据权利要求2所述的显示屏，其特征在于，所述显示屏还包括横纵交叉的选通信号线和读取信号线；
    所述第一光敏元件包括光敏三极管；所述光敏三极管的栅极与所述第一开关晶体管的第一极相耦接，所述光敏三极管的第一极与所述读取信号线相耦接，所述光敏三极管的第二极与第一电压端相耦接；
    所述第一开关晶体管的栅极与所述选通信号线相耦接，所述第一开关晶体管的第二极与第二电压端相耦接。
  15. 根据权利要求2所述的显示屏，其特征在于，所述显示屏还包括横纵交叉的选通信号线和读取信号线；
    所述第一光敏元件包括光敏二极管或光敏电阻；
    所述第一光敏元件的第一端与所述第一开关晶体管的第一极相耦接，所述第一光敏元件的第二端与所述读取信号线相耦接；
    所述第一开关晶体管的栅极与所述选通信号线相耦接，所述第一开关晶体管的第二极与第一电压端相耦接。
  16. 根据权利要求14或15所述的显示屏，其特征在于，所述光线传感器还包括电阻；所述电阻的第一端与所述读取信号线相耦接，所述电阻的第二端与第三电压端相耦接；
    其中，所述第一电压端的电压大于所述第三电压端的电压。
  17. 根据权利要求1-16任一项所述的显示屏，其特征在于，所述显示屏还包括第一滤光层；所述第一滤光层设置于所述第一光敏元件的入光面所在的一侧，且覆盖所述第一光敏元件的入光面；所述第一滤光层用于对入射至所述显示屏的光线进行过滤；
    所述滤光层包括层叠的氧化硅层、氧化钛层。
  18. 根据权利要求1-17任一项所述的显示屏，其特征在于，所述显示屏还包括第一挡光结构；所述第一挡光结构设置于所述第一光敏元件的入光面所在的一侧，且绕所述第一光敏元件的一周设置。
  19. 根据权利要求18所述的显示屏，其特征在于，所述第一光敏元件的入光面为圆形；
    所述第一光敏元件的入光面半径R1与所述第一挡光结构的高度H1的比值为R1/H1＝tanθ 1；
    其中，角度θ 1为入射光与所述第一光敏元件的入光面法线之间的夹角；所述角度θ 1在5°～30°范围内。
  20. 根据权利要求2所述的显示屏，其特征在于，所述第一开关晶体管为顶栅型晶体管；所述显示屏还包括第一遮光层；
    所述第一遮光层位于所述第一开关晶体管的栅极远离所述第一开关晶体管的有源层的一侧，且所述第一遮光层覆盖所述第一开关晶体管的栅极。
  21. 根据权利要求3所述的显示屏，其特征在于，所述发射器包括：发射控制电路，以及与所述发射控制电路连接的发光元件，所述发射控制电路用于接收外围电路发送的电信号，并根据所述电信号触发所述发光元件，使得所述发光元件发射所述出射光，所述出射光为红外光。
  22. 根据权利要求21所述的显示屏，其特征在于，所述显示屏还包括第二挡光结构；所述第二挡光结构设置于所述发光元件的出光面所在的一侧，且绕所述发光元件的一周设置；其中，所述发光元件的入光面半径R2与所述第二挡光结构的高度H2的比值为R2/H2＝tanθ 2，θ 2的角度为5°～45°。
  23. 根据权利要求3所述的显示屏，其特征在于，所述接收器包括：
    第二光敏元件，用于接收所述被测物体反射的反射光，并进行光电转换，生成电信号；
    第二开关晶体管，与所述第二光敏元件相耦接，所述第二开关晶体管用于在处于导通状态时，输出所述第二光敏元件生成的电信号。
  24. 根据权利要求23所述的显示屏，其特征在于，所述接收器还包括第二滤光层；所述第二滤光层设置于所述第二光敏元件的入光面上；所述第二滤光层用于对入射至所述第二光敏元件的光线进行过滤；
    所述第二滤光层包括层叠设置的氧化硅层、氧化钛层。
  25. 根据权利要求23或24所述的显示屏，其特征在于，所述显示屏还包括第三挡光结构；所述第三挡光结构设置于所述第二光敏元件的入光面所在的一侧，且绕所述第二光敏元件的一周设置，其中，所述第二光敏元件的入光面半径R3与所述第三挡光结构的高度H3的比值为R3/H3＝tanθ 3，θ 3的角度为5°～45°。
  26. 一种电子设备，其特征在于，包括如权利要求1-25任一项所述的显示屏。
  27. 根据权利要求26所述的电子设备，其特征在于，所述至少一个光线传感器包括环境光传感器；
    所述电子设备还包括处理器，所述处理器与所述环境光传感器相耦接，所述处理器用于根据所述环境光传感器输出的电信号，调整所述显示屏的亮度。
  28. 根据权利要求26所述的电子设备，其特征在于，所述至少一个光线传感器包括接近光传感器，所述接近光传感器包括发射器和接收器；所述发射器用于向所述显示屏的显示侧发射出射光，所述出射光用于入射至位于所述显示屏显示侧的被测物体；所述接收器用于接收所述被测物体反射的反射光；
    所述电子设备还包括处理器，所述处理器和所述发射器以及所述接收器相耦接；所述处理器用于根据所述发射器发射的出射光和所述接收器接收的反射光计算所述电子设备与所述被测物体之间的距离，并根据所述电子设备与所述被测物体之间的距离调整所述显示屏的亮度。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114690300A (zh) * 2022-04-20 2022-07-01 武汉华星光电技术有限公司 显示面板和显示装置
CN114783292A (zh) * 2022-04-20 2022-07-22 京东方科技集团股份有限公司 一种显示基板及显示装置

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110096047A1 (en) * 2009-10-26 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Display device and semiconductor device
US20120113058A1 (en) * 2000-12-12 2012-05-10 Semiconductor Energy Laboratory Co., Ltd. Information device
CN108538206A (zh) * 2018-05-25 2018-09-14 武汉天马微电子有限公司 显示面板和显示装置
CN109216423A (zh) * 2018-09-12 2019-01-15 武汉华星光电半导体显示技术有限公司 显示面板
CN109685003A (zh) * 2018-12-24 2019-04-26 武汉华星光电半导体显示技术有限公司 Oled显示面板及屏下光学指纹识别方法
CN109858398A (zh) * 2019-01-14 2019-06-07 京东方科技集团股份有限公司 显示面板及其制备方法、显示装置和指纹识别方法
CN109962091A (zh) * 2019-03-29 2019-07-02 京东方科技集团股份有限公司 一种电致发光显示面板及显示装置
CN110071161A (zh) * 2019-05-06 2019-07-30 武汉天马微电子有限公司 显示面板和显示装置
CN110518037A (zh) * 2019-08-26 2019-11-29 武汉天马微电子有限公司 一种显示面板及显示装置
CN110634890A (zh) * 2019-10-11 2019-12-31 京东方科技集团股份有限公司 阵列基板、电子装置和阵列基板的制作方法
CN110956939A (zh) * 2019-11-27 2020-04-03 华为技术有限公司 调节屏幕亮度的方法及电子设备
EP3633732A2 (en) * 2018-10-03 2020-04-08 InnoLux Corporation Display device

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120113058A1 (en) * 2000-12-12 2012-05-10 Semiconductor Energy Laboratory Co., Ltd. Information device
US20110096047A1 (en) * 2009-10-26 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Display device and semiconductor device
CN108538206A (zh) * 2018-05-25 2018-09-14 武汉天马微电子有限公司 显示面板和显示装置
CN109216423A (zh) * 2018-09-12 2019-01-15 武汉华星光电半导体显示技术有限公司 显示面板
EP3633732A2 (en) * 2018-10-03 2020-04-08 InnoLux Corporation Display device
CN109685003A (zh) * 2018-12-24 2019-04-26 武汉华星光电半导体显示技术有限公司 Oled显示面板及屏下光学指纹识别方法
CN109858398A (zh) * 2019-01-14 2019-06-07 京东方科技集团股份有限公司 显示面板及其制备方法、显示装置和指纹识别方法
CN109962091A (zh) * 2019-03-29 2019-07-02 京东方科技集团股份有限公司 一种电致发光显示面板及显示装置
CN110071161A (zh) * 2019-05-06 2019-07-30 武汉天马微电子有限公司 显示面板和显示装置
CN110518037A (zh) * 2019-08-26 2019-11-29 武汉天马微电子有限公司 一种显示面板及显示装置
CN110634890A (zh) * 2019-10-11 2019-12-31 京东方科技集团股份有限公司 阵列基板、电子装置和阵列基板的制作方法
CN110956939A (zh) * 2019-11-27 2020-04-03 华为技术有限公司 调节屏幕亮度的方法及电子设备

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114690300A (zh) * 2022-04-20 2022-07-01 武汉华星光电技术有限公司 显示面板和显示装置
CN114783292A (zh) * 2022-04-20 2022-07-22 京东方科技集团股份有限公司 一种显示基板及显示装置
CN114690300B (zh) * 2022-04-20 2023-10-17 武汉华星光电技术有限公司 显示面板和显示装置
CN114783292B (zh) * 2022-04-20 2023-11-10 京东方科技集团股份有限公司 一种显示基板及显示装置

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