JP2011077283A5 - - Google Patents

Download PDF

Info

Publication number
JP2011077283A5
JP2011077283A5 JP2009227013A JP2009227013A JP2011077283A5 JP 2011077283 A5 JP2011077283 A5 JP 2011077283A5 JP 2009227013 A JP2009227013 A JP 2009227013A JP 2009227013 A JP2009227013 A JP 2009227013A JP 2011077283 A5 JP2011077283 A5 JP 2011077283A5
Authority
JP
Japan
Prior art keywords
gate electrode
layout
light emitting
emitting diode
organic light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009227013A
Other languages
English (en)
Japanese (ja)
Other versions
JP5532803B2 (ja
JP2011077283A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2009227013A external-priority patent/JP5532803B2/ja
Priority to JP2009227013A priority Critical patent/JP5532803B2/ja
Priority to TW099126360A priority patent/TW201133859A/zh
Priority to CN201010275594.9A priority patent/CN102034873B/zh
Priority to KR1020100089849A priority patent/KR20110035891A/ko
Priority to US12/886,983 priority patent/US20110073860A1/en
Publication of JP2011077283A publication Critical patent/JP2011077283A/ja
Publication of JP2011077283A5 publication Critical patent/JP2011077283A5/ja
Publication of JP5532803B2 publication Critical patent/JP5532803B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2009227013A 2009-09-30 2009-09-30 半導体デバイスおよび表示装置 Active JP5532803B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009227013A JP5532803B2 (ja) 2009-09-30 2009-09-30 半導体デバイスおよび表示装置
TW099126360A TW201133859A (en) 2009-09-30 2010-08-06 Semiconductor device and display device
CN201010275594.9A CN102034873B (zh) 2009-09-30 2010-09-08 薄膜晶体管和制造薄膜晶体管的方法
KR1020100089849A KR20110035891A (ko) 2009-09-30 2010-09-14 반도체 디바이스 및 표시 장치
US12/886,983 US20110073860A1 (en) 2009-09-30 2010-09-21 Semiconductor device and display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009227013A JP5532803B2 (ja) 2009-09-30 2009-09-30 半導体デバイスおよび表示装置

Publications (3)

Publication Number Publication Date
JP2011077283A JP2011077283A (ja) 2011-04-14
JP2011077283A5 true JP2011077283A5 (enExample) 2012-11-08
JP5532803B2 JP5532803B2 (ja) 2014-06-25

Family

ID=43779296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009227013A Active JP5532803B2 (ja) 2009-09-30 2009-09-30 半導体デバイスおよび表示装置

Country Status (5)

Country Link
US (1) US20110073860A1 (enExample)
JP (1) JP5532803B2 (enExample)
KR (1) KR20110035891A (enExample)
CN (1) CN102034873B (enExample)
TW (1) TW201133859A (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101952570B1 (ko) * 2011-05-13 2019-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP6035734B2 (ja) * 2011-06-20 2016-11-30 ソニー株式会社 半導体素子、表示装置および電子機器
CN102254917B (zh) * 2011-07-07 2014-05-21 深圳市华星光电技术有限公司 薄膜晶体管阵列基板及其制法
US8716708B2 (en) * 2011-09-29 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101951260B1 (ko) * 2012-03-15 2019-02-25 삼성디스플레이 주식회사 박막트랜지스터, 상기 박막트랜지스터를 포함하는 표시 장치 및 상기 박막트랜지스터를 포함하는 유기 발광 표시 장치
CN202487578U (zh) 2012-03-27 2012-10-10 京东方科技集团股份有限公司 薄膜晶体管、阵列基板及显示装置
JP6001308B2 (ja) * 2012-04-17 2016-10-05 株式会社半導体エネルギー研究所 半導体装置
CN103943684B (zh) 2014-03-26 2017-09-29 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板、显示装置
CN104134699A (zh) * 2014-07-15 2014-11-05 京东方科技集团股份有限公司 一种薄膜晶体管、阵列基板及显示装置
US9468050B1 (en) * 2014-09-25 2016-10-11 X-Celeprint Limited Self-compensating circuit for faulty display pixels
US9799261B2 (en) 2014-09-25 2017-10-24 X-Celeprint Limited Self-compensating circuit for faulty display pixels
CN104409513A (zh) * 2014-11-05 2015-03-11 京东方科技集团股份有限公司 一种金属氧化物薄膜晶体管及其制备方法、阵列基板
US10255834B2 (en) 2015-07-23 2019-04-09 X-Celeprint Limited Parallel redundant chiplet system for controlling display pixels
JP6240692B2 (ja) * 2016-02-15 2017-11-29 株式会社ジャパンディスプレイ 表示装置および表示装置の製造方法
US9882064B2 (en) * 2016-03-10 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Transistor and electronic device
US10950705B2 (en) * 2017-02-15 2021-03-16 Sharp Kabushiki Kaisha Active matrix substrate
CN107895726A (zh) * 2017-11-30 2018-04-10 武汉天马微电子有限公司 一种阵列基板及其制作方法和显示装置
TWI717855B (zh) * 2019-10-05 2021-02-01 友達光電股份有限公司 畫素電路及顯示裝置
KR102371366B1 (ko) * 2020-08-10 2022-03-04 재단법인대구경북과학기술원 반도체 트랜지스터
US11469195B2 (en) * 2020-09-24 2022-10-11 Nanya Technology Corporation Semiconductor device with tilted insulating layers and method for fabricating the same
CN114863828B (zh) * 2022-05-31 2023-07-25 武汉华星光电半导体显示技术有限公司 拼接屏
CN120112092B (zh) * 2025-05-08 2025-09-30 合肥维信诺科技有限公司 显示面板、显示面板的制造方法及电子设备

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5187551A (en) * 1988-04-30 1993-02-16 Sharp Kabushiki Kaisha Thin film semiconductor device and liquid crystal display apparatus thereof for preventing irradiated light from reaching the semiconductor layers
JP2635885B2 (ja) * 1992-06-09 1997-07-30 インターナショナル・ビジネス・マシーンズ・コーポレイション 薄膜トランジスタ及びアクティブマトリクス液晶表示装置
US5461250A (en) * 1992-08-10 1995-10-24 International Business Machines Corporation SiGe thin film or SOI MOSFET and method for making the same
KR0139573B1 (ko) * 1994-12-26 1998-06-15 김주용 이중 채널 박막트랜지스터 및 그 제조방법
KR100205306B1 (ko) * 1995-12-26 1999-07-01 구본준 박막트랜지스터의 제조방법
CN100373563C (zh) * 1998-06-30 2008-03-05 东芝松下显示技术有限公司 顶栅型薄膜晶体管的制造方法
JP3420201B2 (ja) * 1999-12-22 2003-06-23 日本電気株式会社 液晶表示装置
US7058283B2 (en) * 2000-06-08 2006-06-06 Sony Corporation Magnetic tape tracking control apparatus and method, magnetic tape format, recording medium and program
JP2004343018A (ja) * 2003-03-20 2004-12-02 Fujitsu Ltd 半導体装置及びその製造方法
JP2005079560A (ja) * 2003-09-04 2005-03-24 Hitachi Ltd 薄膜トランジスタ，表示装置、およびその製造方法
KR100585410B1 (ko) * 2003-11-11 2006-06-07 엘지.필립스 엘시디 주식회사 구동회로 일체형 액정표시장치의 스위칭 소자 및 구동소자및 그 제조방법
CN100463193C (zh) * 2006-11-03 2009-02-18 北京京东方光电科技有限公司 一种tft阵列结构及其制造方法
KR101410926B1 (ko) * 2007-02-16 2014-06-24 삼성전자주식회사 박막 트랜지스터 및 그 제조방법
JP2008258345A (ja) * 2007-04-04 2008-10-23 Sony Corp 薄膜トランジスタおよびその製造方法ならびに表示装置
JP5245287B2 (ja) * 2007-05-18 2013-07-24 ソニー株式会社 半導体装置の製造方法、薄膜トランジスタ基板の製造方法および表示装置の製造方法
KR101533098B1 (ko) * 2008-06-04 2015-07-02 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
KR101929726B1 (ko) * 2009-07-18 2018-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법

Similar Documents

Publication Publication Date Title
JP2011077283A5 (enExample)
US10050097B2 (en) Organic light-emitting diode display
KR102375192B1 (ko) 유기 발광 표시 장치
KR20230049075A (ko) 유기 발광 표시 장치
JP5657218B2 (ja) 表示基板
KR102362186B1 (ko) 유기 발광 표시 장치
EP2876684A3 (en) Organic electroluminescent device and repairing method thereof
JP2012068629A5 (ja) 発光表示装置、及び発光表示装置の作製方法
JP2016051184A5 (enExample)
EP2278622A3 (en) Organic light emitting diode display
US20150279271A1 (en) Pixel unit of organic electroluminescent display
JP2013137484A5 (enExample)
JP2010079038A5 (enExample)
KR102308621B1 (ko) 박막 트랜지스터 표시판 및 그 제조 방법
KR20080073944A (ko) 하이브리드 유기 전계 발광 소자 및 그 제조방법
KR102425426B1 (ko) 유기 발광 표시 장치
JP2012084864A5 (enExample)
CN102651403A (zh) 薄膜晶体管、阵列基板及其制造方法和显示面板
JP2018197868A5 (enExample)
CN104221155A (zh) 半导体器件、显示器及制造半导体器件的方法
CN202142535U (zh) 一种薄膜场效应晶体管和液晶显示器
WO2009057665A1 (ja) 薄膜能動素子群、薄膜能動素子アレイ、有機発光装置、表示装置および薄膜能動素子群の製造方法
KR102373328B1 (ko) 유기 발광 표시 장치
KR20160086503A (ko) 유기 발광 표시 장치
JP2007208237A5 (enExample)