JP2013137484A5 - - Google Patents

Download PDF

Info

Publication number
JP2013137484A5
JP2013137484A5 JP2012035080A JP2012035080A JP2013137484A5 JP 2013137484 A5 JP2013137484 A5 JP 2013137484A5 JP 2012035080 A JP2012035080 A JP 2012035080A JP 2012035080 A JP2012035080 A JP 2012035080A JP 2013137484 A5 JP2013137484 A5 JP 2013137484A5
Authority
JP
Japan
Prior art keywords
region
conductive layer
overlapping
transistor
functioning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012035080A
Other languages
English (en)
Japanese (ja)
Other versions
JP5917185B2 (ja
JP2013137484A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2012035080A priority Critical patent/JP5917185B2/ja
Priority claimed from JP2012035080A external-priority patent/JP5917185B2/ja
Publication of JP2013137484A publication Critical patent/JP2013137484A/ja
Publication of JP2013137484A5 publication Critical patent/JP2013137484A5/ja
Application granted granted Critical
Publication of JP5917185B2 publication Critical patent/JP5917185B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2012035080A 2011-02-25 2012-02-21 表示装置 Expired - Fee Related JP5917185B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012035080A JP5917185B2 (ja) 2011-02-25 2012-02-21 表示装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2011040486 2011-02-25
JP2011040486 2011-02-25
JP2011260520 2011-11-29
JP2011260520 2011-11-29
JP2012035080A JP5917185B2 (ja) 2011-02-25 2012-02-21 表示装置

Publications (3)

Publication Number Publication Date
JP2013137484A JP2013137484A (ja) 2013-07-11
JP2013137484A5 true JP2013137484A5 (enExample) 2015-01-22
JP5917185B2 JP5917185B2 (ja) 2016-05-11

Family

ID=46718379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012035080A Expired - Fee Related JP5917185B2 (ja) 2011-02-25 2012-02-21 表示装置

Country Status (4)

Country Link
US (1) US8928010B2 (enExample)
JP (1) JP5917185B2 (enExample)
KR (1) KR20120101997A (enExample)
TW (2) TWI582507B (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101857405B1 (ko) * 2009-07-10 2018-05-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
US9379169B2 (en) * 2012-09-14 2016-06-28 Universal Display Corporation Very high resolution AMOLED display
KR102050461B1 (ko) * 2013-06-28 2019-11-29 엘지디스플레이 주식회사 유기 발광 소자
DE112014003900T5 (de) * 2013-08-26 2016-06-09 Semiconductor Energy Laboratory Co., Ltd. Lichtemittierendes Element, Anzeigemodul, Beleuchtungsmodul, lichtemittierende Vorrichtung, Anzeigevorrichtung, elektronisches Gerät und Beleuchtungsvorrichtung
US9680026B2 (en) 2013-09-13 2017-06-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having gate electrode overlapping semiconductor film
TW202339281A (zh) 2013-10-10 2023-10-01 日商半導體能源研究所股份有限公司 液晶顯示裝置
US10186528B2 (en) 2014-02-24 2019-01-22 Lg Display Co., Ltd. Thin film transistor substrate and display using the same
US10985196B2 (en) 2014-02-24 2021-04-20 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
EP2911200B1 (en) 2014-02-24 2020-06-03 LG Display Co., Ltd. Thin film transistor substrate and display using the same
EP2911202B1 (en) 2014-02-24 2019-02-20 LG Display Co., Ltd. Thin film transistor substrate and display using the same
US9214508B2 (en) 2014-02-24 2015-12-15 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
US9721973B2 (en) 2014-02-24 2017-08-01 Lg Display Co., Ltd. Thin film transistor substrate and display using the same
US10325937B2 (en) 2014-02-24 2019-06-18 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
EP2911199B1 (en) 2014-02-24 2020-05-06 LG Display Co., Ltd. Thin film transistor substrate and display using the same
KR101640192B1 (ko) * 2014-08-05 2016-07-18 삼성디스플레이 주식회사 디스플레이 장치
US9941489B2 (en) 2014-09-01 2018-04-10 Samsung Display Co., Ltd. Organic light emitting diode display device and manufacturing method thereof
KR101968666B1 (ko) 2014-09-01 2019-04-15 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
JP6432223B2 (ja) * 2014-09-03 2018-12-05 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置および電子機器
JP6459316B2 (ja) * 2014-09-03 2019-01-30 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置および電子機器
JP6459315B2 (ja) * 2014-09-03 2019-01-30 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置および電子機器
KR102294413B1 (ko) * 2014-11-18 2021-08-27 삼성디스플레이 주식회사 유기발광 표시장치
US10903440B2 (en) 2015-02-24 2021-01-26 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
CN114361180A (zh) * 2015-12-28 2022-04-15 株式会社半导体能源研究所 半导体装置、包括该半导体装置的显示装置
CN115101558B (zh) * 2016-12-22 2025-09-09 株式会社半导体能源研究所 显示装置以及电子设备
JP2018141902A (ja) * 2017-02-28 2018-09-13 エルジー ディスプレイ カンパニー リミテッド ゲッター粒状体及び表示装置
CN108630733B (zh) * 2018-05-07 2020-12-25 京东方科技集团股份有限公司 一种显示面板
CN119208351A (zh) 2018-05-17 2024-12-27 株式会社半导体能源研究所 显示装置
US20210183833A1 (en) * 2019-12-17 2021-06-17 Innolux Corporation Electronic device
CN112992960B (zh) * 2019-12-17 2025-08-26 群创光电股份有限公司 电子装置
CN113544855B (zh) * 2020-02-13 2023-07-04 京东方科技集团股份有限公司 显示面板及显示装置
US20240196713A1 (en) * 2021-04-23 2024-06-13 Semiconductor Energy Laboratory Co., Ltd. Display device
CN113871431A (zh) * 2021-09-17 2021-12-31 深圳市华星光电半导体显示技术有限公司 显示面板和移动终端

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001195016A (ja) * 1999-10-29 2001-07-19 Semiconductor Energy Lab Co Ltd 電子装置
TW521226B (en) * 2000-03-27 2003-02-21 Semiconductor Energy Lab Electro-optical device
US6661180B2 (en) * 2001-03-22 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, driving method for the same and electronic apparatus
JP3939666B2 (ja) * 2002-01-18 2007-07-04 株式会社半導体エネルギー研究所 発光装置及び電子機器
JP2005123571A (ja) * 2003-09-22 2005-05-12 Sanyo Electric Co Ltd トランジスタ基板、表示装置及びそれらの製造方法
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
KR101152120B1 (ko) 2005-03-16 2012-06-15 삼성전자주식회사 표시 장치 및 그 구동 방법
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
KR101219036B1 (ko) * 2005-05-02 2013-01-07 삼성디스플레이 주식회사 유기 발광 표시 장치
TWI429327B (zh) * 2005-06-30 2014-03-01 Semiconductor Energy Lab 半導體裝置、顯示裝置、及電子設備
EP1998374A3 (en) 2005-09-29 2012-01-18 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5147320B2 (ja) * 2006-07-21 2013-02-20 株式会社半導体エネルギー研究所 半導体装置
CN101281912B (zh) 2007-04-03 2013-01-23 株式会社半导体能源研究所 Soi衬底及其制造方法以及半导体装置
US8513678B2 (en) 2007-05-18 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
KR101917753B1 (ko) * 2011-06-24 2018-11-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치

Similar Documents

Publication Publication Date Title
JP2013137484A5 (enExample)
JP2013190824A5 (ja) Ｅｌ表示装置
JP2013016831A5 (enExample)
JP2012134520A5 (ja) 表示装置
JP2012138590A5 (ja) 表示装置
JP2015128163A5 (enExample)
JP2013047808A5 (ja) 表示装置
JP2017054152A5 (enExample)
JP2012009839A5 (ja) 半導体装置
JP2012256063A5 (ja) 表示装置
JP2013239713A5 (enExample)
JP2011054951A5 (ja) 半導体装置
JP2015188059A5 (enExample)
JP2013033998A5 (enExample)
JP2013231986A5 (ja) 表示装置
JP2013084941A5 (ja) 半導体装置
JP2013127632A5 (ja) 電子装置
JP2013137498A5 (enExample)
JP2014199402A5 (enExample)
JP2014078001A5 (ja) 液晶表示装置
JP2013178525A5 (ja) 半導体装置
JP2014063179A5 (enExample)
JP2013077011A5 (ja) 液晶表示装置
JP2014199404A5 (enExample)
JP2016034040A5 (ja) 表示装置