TWI582507B - 顯示裝置 - Google Patents

顯示裝置 Download PDF

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Publication number
TWI582507B
TWI582507B TW105113607A TW105113607A TWI582507B TW I582507 B TWI582507 B TW I582507B TW 105113607 A TW105113607 A TW 105113607A TW 105113607 A TW105113607 A TW 105113607A TW I582507 B TWI582507 B TW I582507B
Authority
TW
Taiwan
Prior art keywords
layer
transistor
light
electrode
line
Prior art date
Application number
TW105113607A
Other languages
English (en)
Chinese (zh)
Other versions
TW201629606A (zh
Inventor
山崎舜平
池田隆之
青木健
上妻宗廣
中川貴史
Original Assignee
半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW201629606A publication Critical patent/TW201629606A/zh
Application granted granted Critical
Publication of TWI582507B publication Critical patent/TWI582507B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
TW105113607A 2011-02-25 2012-02-23 顯示裝置 TWI582507B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011040486 2011-02-25
JP2011260520 2011-11-29

Publications (2)

Publication Number Publication Date
TW201629606A TW201629606A (zh) 2016-08-16
TWI582507B true TWI582507B (zh) 2017-05-11

Family

ID=46718379

Family Applications (2)

Application Number Title Priority Date Filing Date
TW105113607A TWI582507B (zh) 2011-02-25 2012-02-23 顯示裝置
TW101106028A TWI542933B (zh) 2011-02-25 2012-02-23 顯示裝置

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW101106028A TWI542933B (zh) 2011-02-25 2012-02-23 顯示裝置

Country Status (4)

Country Link
US (1) US8928010B2 (enExample)
JP (1) JP5917185B2 (enExample)
KR (1) KR20120101997A (enExample)
TW (2) TWI582507B (enExample)

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KR101857405B1 (ko) * 2009-07-10 2018-05-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
US9379169B2 (en) * 2012-09-14 2016-06-28 Universal Display Corporation Very high resolution AMOLED display
KR102050461B1 (ko) * 2013-06-28 2019-11-29 엘지디스플레이 주식회사 유기 발광 소자
DE112014003900T5 (de) * 2013-08-26 2016-06-09 Semiconductor Energy Laboratory Co., Ltd. Lichtemittierendes Element, Anzeigemodul, Beleuchtungsmodul, lichtemittierende Vorrichtung, Anzeigevorrichtung, elektronisches Gerät und Beleuchtungsvorrichtung
US9680026B2 (en) 2013-09-13 2017-06-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having gate electrode overlapping semiconductor film
TW202339281A (zh) 2013-10-10 2023-10-01 日商半導體能源研究所股份有限公司 液晶顯示裝置
US10186528B2 (en) 2014-02-24 2019-01-22 Lg Display Co., Ltd. Thin film transistor substrate and display using the same
US10985196B2 (en) 2014-02-24 2021-04-20 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
EP2911200B1 (en) 2014-02-24 2020-06-03 LG Display Co., Ltd. Thin film transistor substrate and display using the same
EP2911202B1 (en) 2014-02-24 2019-02-20 LG Display Co., Ltd. Thin film transistor substrate and display using the same
US9214508B2 (en) 2014-02-24 2015-12-15 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
US9721973B2 (en) 2014-02-24 2017-08-01 Lg Display Co., Ltd. Thin film transistor substrate and display using the same
US10325937B2 (en) 2014-02-24 2019-06-18 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
EP2911199B1 (en) 2014-02-24 2020-05-06 LG Display Co., Ltd. Thin film transistor substrate and display using the same
KR101640192B1 (ko) * 2014-08-05 2016-07-18 삼성디스플레이 주식회사 디스플레이 장치
US9941489B2 (en) 2014-09-01 2018-04-10 Samsung Display Co., Ltd. Organic light emitting diode display device and manufacturing method thereof
KR101968666B1 (ko) 2014-09-01 2019-04-15 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
JP6432223B2 (ja) * 2014-09-03 2018-12-05 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置および電子機器
JP6459316B2 (ja) * 2014-09-03 2019-01-30 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置および電子機器
JP6459315B2 (ja) * 2014-09-03 2019-01-30 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置および電子機器
KR102294413B1 (ko) * 2014-11-18 2021-08-27 삼성디스플레이 주식회사 유기발광 표시장치
US10903440B2 (en) 2015-02-24 2021-01-26 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
CN114361180A (zh) * 2015-12-28 2022-04-15 株式会社半导体能源研究所 半导体装置、包括该半导体装置的显示装置
CN115101558B (zh) * 2016-12-22 2025-09-09 株式会社半导体能源研究所 显示装置以及电子设备
JP2018141902A (ja) * 2017-02-28 2018-09-13 エルジー ディスプレイ カンパニー リミテッド ゲッター粒状体及び表示装置
CN108630733B (zh) * 2018-05-07 2020-12-25 京东方科技集团股份有限公司 一种显示面板
CN119208351A (zh) 2018-05-17 2024-12-27 株式会社半导体能源研究所 显示装置
US20210183833A1 (en) * 2019-12-17 2021-06-17 Innolux Corporation Electronic device
CN112992960B (zh) * 2019-12-17 2025-08-26 群创光电股份有限公司 电子装置
CN113544855B (zh) * 2020-02-13 2023-07-04 京东方科技集团股份有限公司 显示面板及显示装置
US20240196713A1 (en) * 2021-04-23 2024-06-13 Semiconductor Energy Laboratory Co., Ltd. Display device
CN113871431A (zh) * 2021-09-17 2021-12-31 深圳市华星光电半导体显示技术有限公司 显示面板和移动终端

Citations (6)

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Publication number Priority date Publication date Assignee Title
JP2001195016A (ja) * 1999-10-29 2001-07-19 Semiconductor Energy Lab Co Ltd 電子装置
TW521226B (en) * 2000-03-27 2003-02-21 Semiconductor Energy Lab Electro-optical device
JP2003330391A (ja) * 2002-01-18 2003-11-19 Semiconductor Energy Lab Co Ltd 発光装置及び電子機器
TWI244357B (en) * 2003-09-22 2005-11-21 Sanyo Electric Co Transistor substrate, display device, and method for manufature
US20100006866A1 (en) * 2001-03-22 2010-01-14 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, driving method for the same and electronic apparatus
US7679585B2 (en) * 2005-06-30 2010-03-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic appliance

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US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
KR101152120B1 (ko) 2005-03-16 2012-06-15 삼성전자주식회사 표시 장치 및 그 구동 방법
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
KR101219036B1 (ko) * 2005-05-02 2013-01-07 삼성디스플레이 주식회사 유기 발광 표시 장치
EP1998374A3 (en) 2005-09-29 2012-01-18 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5147320B2 (ja) * 2006-07-21 2013-02-20 株式会社半導体エネルギー研究所 半導体装置
CN101281912B (zh) 2007-04-03 2013-01-23 株式会社半导体能源研究所 Soi衬底及其制造方法以及半导体装置
US8513678B2 (en) 2007-05-18 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
KR101917753B1 (ko) * 2011-06-24 2018-11-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001195016A (ja) * 1999-10-29 2001-07-19 Semiconductor Energy Lab Co Ltd 電子装置
TW521226B (en) * 2000-03-27 2003-02-21 Semiconductor Energy Lab Electro-optical device
US20100006866A1 (en) * 2001-03-22 2010-01-14 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, driving method for the same and electronic apparatus
JP2003330391A (ja) * 2002-01-18 2003-11-19 Semiconductor Energy Lab Co Ltd 発光装置及び電子機器
TWI244357B (en) * 2003-09-22 2005-11-21 Sanyo Electric Co Transistor substrate, display device, and method for manufature
US7679585B2 (en) * 2005-06-30 2010-03-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic appliance

Also Published As

Publication number Publication date
US20120217515A1 (en) 2012-08-30
TW201629606A (zh) 2016-08-16
JP5917185B2 (ja) 2016-05-11
KR20120101997A (ko) 2012-09-17
TWI542933B (zh) 2016-07-21
TW201248283A (en) 2012-12-01
US8928010B2 (en) 2015-01-06
JP2013137484A (ja) 2013-07-11

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