JP5917185B2 - 表示装置 - Google Patents

表示装置 Download PDF

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Publication number
JP5917185B2
JP5917185B2 JP2012035080A JP2012035080A JP5917185B2 JP 5917185 B2 JP5917185 B2 JP 5917185B2 JP 2012035080 A JP2012035080 A JP 2012035080A JP 2012035080 A JP2012035080 A JP 2012035080A JP 5917185 B2 JP5917185 B2 JP 5917185B2
Authority
JP
Japan
Prior art keywords
layer
region
light
abbreviation
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012035080A
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English (en)
Japanese (ja)
Other versions
JP2013137484A5 (enExample
JP2013137484A (ja
Inventor
山崎　舜平
舜平 山崎
池田　隆之
隆之 池田
青木　健
健 青木
宗広 上妻
宗広 上妻
中川　貴史
貴史 中川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2012035080A priority Critical patent/JP5917185B2/ja
Publication of JP2013137484A publication Critical patent/JP2013137484A/ja
Publication of JP2013137484A5 publication Critical patent/JP2013137484A5/ja
Application granted granted Critical
Publication of JP5917185B2 publication Critical patent/JP5917185B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2012035080A 2011-02-25 2012-02-21 表示装置 Expired - Fee Related JP5917185B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012035080A JP5917185B2 (ja) 2011-02-25 2012-02-21 表示装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2011040486 2011-02-25
JP2011040486 2011-02-25
JP2011260520 2011-11-29
JP2011260520 2011-11-29
JP2012035080A JP5917185B2 (ja) 2011-02-25 2012-02-21 表示装置

Publications (3)

Publication Number Publication Date
JP2013137484A JP2013137484A (ja) 2013-07-11
JP2013137484A5 JP2013137484A5 (enExample) 2015-01-22
JP5917185B2 true JP5917185B2 (ja) 2016-05-11

Family

ID=46718379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012035080A Expired - Fee Related JP5917185B2 (ja) 2011-02-25 2012-02-21 表示装置

Country Status (4)

Country Link
US (1) US8928010B2 (enExample)
JP (1) JP5917185B2 (enExample)
KR (1) KR20120101997A (enExample)
TW (2) TWI542933B (enExample)

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KR101422362B1 (ko) 2009-07-10 2014-07-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 표시 패널 및 전자 기기
US9379169B2 (en) * 2012-09-14 2016-06-28 Universal Display Corporation Very high resolution AMOLED display
KR102050461B1 (ko) * 2013-06-28 2019-11-29 엘지디스플레이 주식회사 유기 발광 소자
CN107958959B (zh) 2013-08-26 2019-11-12 株式会社半导体能源研究所 发光元件、显示模块、照明模块、发光装置、显示装置、电子设备及照明装置
KR102446991B1 (ko) 2013-09-13 2022-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
TWI688102B (zh) 2013-10-10 2020-03-11 日商半導體能源研究所股份有限公司 半導體裝置
US10325937B2 (en) 2014-02-24 2019-06-18 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
US10985196B2 (en) 2014-02-24 2021-04-20 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
US10186528B2 (en) 2014-02-24 2019-01-22 Lg Display Co., Ltd. Thin film transistor substrate and display using the same
US10903246B2 (en) 2014-02-24 2021-01-26 Lg Display Co., Ltd. Thin film transistor substrate and display using the same
US9214508B2 (en) 2014-02-24 2015-12-15 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
EP2911199B1 (en) 2014-02-24 2020-05-06 LG Display Co., Ltd. Thin film transistor substrate and display using the same
US9721973B2 (en) 2014-02-24 2017-08-01 Lg Display Co., Ltd. Thin film transistor substrate and display using the same
US9881986B2 (en) 2014-02-24 2018-01-30 Lg Display Co., Ltd. Thin film transistor substrate and display using the same
KR101640192B1 (ko) * 2014-08-05 2016-07-18 삼성디스플레이 주식회사 디스플레이 장치
US9941489B2 (en) 2014-09-01 2018-04-10 Samsung Display Co., Ltd. Organic light emitting diode display device and manufacturing method thereof
KR101968666B1 (ko) 2014-09-01 2019-04-15 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
JP6432223B2 (ja) * 2014-09-03 2018-12-05 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置および電子機器
JP6459315B2 (ja) * 2014-09-03 2019-01-30 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置および電子機器
JP6459316B2 (ja) * 2014-09-03 2019-01-30 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置および電子機器
KR102294413B1 (ko) 2014-11-18 2021-08-27 삼성디스플레이 주식회사 유기발광 표시장치
US10903440B2 (en) 2015-02-24 2021-01-26 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
WO2017115214A1 (en) * 2015-12-28 2017-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
KR102539347B1 (ko) * 2016-12-22 2023-06-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
JP2018141902A (ja) * 2017-02-28 2018-09-13 エルジー ディスプレイ カンパニー リミテッド ゲッター粒状体及び表示装置
CN108630733B (zh) * 2018-05-07 2020-12-25 京东方科技集团股份有限公司 一种显示面板
CN119208351A (zh) 2018-05-17 2024-12-27 株式会社半导体能源研究所 显示装置
CN112992960B (zh) * 2019-12-17 2025-08-26 群创光电股份有限公司 电子装置
US20210183833A1 (en) * 2019-12-17 2021-06-17 Innolux Corporation Electronic device
CN113544855B (zh) * 2020-02-13 2023-07-04 京东方科技集团股份有限公司 显示面板及显示装置
KR20230174233A (ko) * 2021-04-23 2023-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
CN113871431A (zh) * 2021-09-17 2021-12-31 深圳市华星光电半导体显示技术有限公司 显示面板和移动终端

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JP2001195016A (ja) * 1999-10-29 2001-07-19 Semiconductor Energy Lab Co Ltd 電子装置
TW521226B (en) * 2000-03-27 2003-02-21 Semiconductor Energy Lab Electro-optical device
US6661180B2 (en) * 2001-03-22 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, driving method for the same and electronic apparatus
JP3939666B2 (ja) * 2002-01-18 2007-07-04 株式会社半導体エネルギー研究所 発光装置及び電子機器
JP2005123571A (ja) * 2003-09-22 2005-05-12 Sanyo Electric Co Ltd トランジスタ基板、表示装置及びそれらの製造方法
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
KR101152120B1 (ko) 2005-03-16 2012-06-15 삼성전자주식회사 표시 장치 및 그 구동 방법
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
KR101219036B1 (ko) * 2005-05-02 2013-01-07 삼성디스플레이 주식회사 유기 발광 표시 장치
TWI429327B (zh) * 2005-06-30 2014-03-01 Semiconductor Energy Lab 半導體裝置、顯示裝置、及電子設備
EP1995787A3 (en) 2005-09-29 2012-01-18 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method therof
JP5147320B2 (ja) * 2006-07-21 2013-02-20 株式会社半導体エネルギー研究所 半導体装置
CN101281912B (zh) 2007-04-03 2013-01-23 株式会社半导体能源研究所 Soi衬底及其制造方法以及半导体装置
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KR101917753B1 (ko) * 2011-06-24 2018-11-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치

Also Published As

Publication number Publication date
KR20120101997A (ko) 2012-09-17
TWI542933B (zh) 2016-07-21
JP2013137484A (ja) 2013-07-11
TWI582507B (zh) 2017-05-11
TW201629606A (zh) 2016-08-16
US8928010B2 (en) 2015-01-06
US20120217515A1 (en) 2012-08-30
TW201248283A (en) 2012-12-01

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