JP2010541236A - 反応性ガスを空間的に分離するガス配送ヘッドを用い、配送ヘッドを通過する基板の移動を伴う、薄膜形成のための方法及び堆積装置 - Google Patents

反応性ガスを空間的に分離するガス配送ヘッドを用い、配送ヘッドを通過する基板の移動を伴う、薄膜形成のための方法及び堆積装置 Download PDF

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JP2010541236A
JP2010541236A JP2010526893A JP2010526893A JP2010541236A JP 2010541236 A JP2010541236 A JP 2010541236A JP 2010526893 A JP2010526893 A JP 2010526893A JP 2010526893 A JP2010526893 A JP 2010526893A JP 2010541236 A JP2010541236 A JP 2010541236A
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deposition
substrate
phase material
gas
section
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Japanese (ja)
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JP2010541236A5 (enExample
Inventor
ハワード レビー，デイビッド
スタンレー ケール，ロジャー
トッド キャリー，ジェフリー
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イーストマン コダック カンパニー
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B33—ADDITIVE MANUFACTURING TECHNOLOGY
    • B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y80/00—Products made by additive manufacturing

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP2010526893A 2007-09-26 2008-09-16 反応性ガスを空間的に分離するガス配送ヘッドを用い、配送ヘッドを通過する基板の移動を伴う、薄膜形成のための方法及び堆積装置 Pending JP2010541236A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/861,359 US8398770B2 (en) 2007-09-26 2007-09-26 Deposition system for thin film formation
PCT/US2008/010752 WO2009042044A1 (en) 2007-09-26 2008-09-16 Process and deposition system for thin film formation with gas delivery head having spatial separation of reactive gases and movement of the substrate passed the delivery head

Publications (2)

Publication Number Publication Date
JP2010541236A true JP2010541236A (ja) 2010-12-24
JP2010541236A5 JP2010541236A5 (enExample) 2011-11-10

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JP2010526893A Pending JP2010541236A (ja) 2007-09-26 2008-09-16 反応性ガスを空間的に分離するガス配送ヘッドを用い、配送ヘッドを通過する基板の移動を伴う、薄膜形成のための方法及び堆積装置

Country Status (6)

Country Link
US (1) US8398770B2 (enExample)
EP (1) EP2191037A1 (enExample)
JP (1) JP2010541236A (enExample)
CN (1) CN101809193A (enExample)
TW (1) TW200934886A (enExample)
WO (1) WO2009042044A1 (enExample)

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JP2010540774A (ja) * 2007-09-26 2010-12-24 イーストマン コダック カンパニー 光学膜の製造方法
JP2013506762A (ja) * 2009-09-30 2013-02-28 サイノス・テクノロジー・インコーポレイテツド 曲面上に薄膜を形成するための蒸着反応器
JP2014508221A (ja) * 2011-01-31 2014-04-03 ネーデルランドセ・オルガニサティ・フォール・トゥーヘパスト−ナトゥールウェテンスハッペライク・オンデルズーク・テーエヌオー 原子層成膜のための装置
JP2014508225A (ja) * 2011-03-01 2014-04-03 アプライド マテリアルズ インコーポレイテッド 原子層堆積のための装置及びプロセス
KR20150120400A (ko) * 2013-02-20 2015-10-27 어플라이드 머티어리얼스, 인코포레이티드 캐러셀 원자 층 증착을 위한 장치 및 방법들
KR101575844B1 (ko) 2014-05-09 2015-12-08 제주대학교 산학협력단 원자층 증착용 헤드 및 이를 구비하는 원자층 증착 장치
KR101787854B1 (ko) 2009-07-30 2017-10-18 네덜란제 오르가니자티에 포오르 토에게파스트-나투우르베텐샤펠리즈크 온데르조에크 테엔오 원자층 증착을 위한 장치 및 방법
WO2017222350A1 (ko) * 2016-06-24 2017-12-28 주식회사 넥서스비 원자층 증착 장비 가스 모듈, 원자층 증착 장비 및 그를 이용한 원자층 증착 방법
JP2018160619A (ja) * 2017-03-23 2018-10-11 東芝メモリ株式会社 半導体製造装置

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JP2018160619A (ja) * 2017-03-23 2018-10-11 東芝メモリ株式会社 半導体製造装置

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