CN101809193A - 使用具有空间分隔的反应性气体的气体输送头和移动基材经过输送头的用于形成薄膜的方法和沉积系统 - Google Patents

使用具有空间分隔的反应性气体的气体输送头和移动基材经过输送头的用于形成薄膜的方法和沉积系统 Download PDF

Info

Publication number
CN101809193A
CN101809193A CN200880109104A CN200880109104A CN101809193A CN 101809193 A CN101809193 A CN 101809193A CN 200880109104 A CN200880109104 A CN 200880109104A CN 200880109104 A CN200880109104 A CN 200880109104A CN 101809193 A CN101809193 A CN 101809193A
Authority
CN
China
Prior art keywords
deposition
base material
delivery head
output face
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200880109104A
Other languages
English (en)
Chinese (zh)
Inventor
D·H·莱维
R·S·克尔
J·T·凯里
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of CN101809193A publication Critical patent/CN101809193A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B33—ADDITIVE MANUFACTURING TECHNOLOGY
    • B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y80/00—Products made by additive manufacturing

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
CN200880109104A 2007-09-26 2008-09-16 使用具有空间分隔的反应性气体的气体输送头和移动基材经过输送头的用于形成薄膜的方法和沉积系统 Pending CN101809193A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/861,359 US8398770B2 (en) 2007-09-26 2007-09-26 Deposition system for thin film formation
US11/861359 2007-09-26
PCT/US2008/010752 WO2009042044A1 (en) 2007-09-26 2008-09-16 Process and deposition system for thin film formation with gas delivery head having spatial separation of reactive gases and movement of the substrate passed the delivery head

Publications (1)

Publication Number Publication Date
CN101809193A true CN101809193A (zh) 2010-08-18

Family

ID=40099005

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880109104A Pending CN101809193A (zh) 2007-09-26 2008-09-16 使用具有空间分隔的反应性气体的气体输送头和移动基材经过输送头的用于形成薄膜的方法和沉积系统

Country Status (6)

Country Link
US (1) US8398770B2 (enExample)
EP (1) EP2191037A1 (enExample)
JP (1) JP2010541236A (enExample)
CN (1) CN101809193A (enExample)
TW (1) TW200934886A (enExample)
WO (1) WO2009042044A1 (enExample)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102803553A (zh) * 2010-02-18 2012-11-28 荷兰应用自然科学研究组织Tno 连续的图案化层沉积
CN103108984A (zh) * 2010-08-30 2013-05-15 Beneq有限公司 喷嘴头和装置
CN103415648A (zh) * 2011-01-31 2013-11-27 荷兰应用自然科学研究组织Tno 用于原子层沉积的装置
CN103828085A (zh) * 2011-08-09 2014-05-28 科迪华公司 面向下的打印设备和方法
CN104271798A (zh) * 2012-04-30 2015-01-07 欧司朗有限公司 用于对衬底进行表面处理的装置和方法和用于制造光电子构件的方法
CN105051879A (zh) * 2013-03-15 2015-11-11 应用材料公司 具有光学测量的旋转式气体分配组件
US9302513B2 (en) 2011-08-09 2016-04-05 Kateeva, Inc. Apparatus and method for control of print gap
CN109972118A (zh) * 2017-12-28 2019-07-05 三星显示有限公司 沉积设备
US10434804B2 (en) 2008-06-13 2019-10-08 Kateeva, Inc. Low particle gas enclosure systems and methods
CN110791748A (zh) * 2019-10-15 2020-02-14 江苏卓高新材料科技有限公司 一种微孔薄膜表面沉积装置及方法
CN112030139A (zh) * 2019-06-04 2020-12-04 金碳洁股份有限公司 循环式磊晶沉积系统
CN112513326A (zh) * 2018-07-30 2021-03-16 法国国家科学研究中心 用于气相沉积的紧凑头部和紧凑系统
US11107712B2 (en) 2013-12-26 2021-08-31 Kateeva, Inc. Techniques for thermal treatment of electronic devices
US11338319B2 (en) 2014-04-30 2022-05-24 Kateeva, Inc. Gas cushion apparatus and techniques for substrate coating
CN115190820A (zh) * 2019-12-18 2022-10-14 K·P·穆塞尔曼 用于薄膜沉积的设备和方法
US11489119B2 (en) 2014-01-21 2022-11-01 Kateeva, Inc. Apparatus and techniques for electronic device encapsulation
US11975546B2 (en) 2008-06-13 2024-05-07 Kateeva, Inc. Gas enclosure assembly and system
WO2024109529A1 (zh) * 2022-11-25 2024-05-30 江苏微导纳米科技股份有限公司 一种用于沉积薄膜的方法和设备以及薄膜
US12018857B2 (en) 2008-06-13 2024-06-25 Kateeva, Inc. Gas enclosure assembly and system
US12064979B2 (en) 2008-06-13 2024-08-20 Kateeva, Inc. Low-particle gas enclosure systems and methods
CN120625016A (zh) * 2025-08-13 2025-09-12 太原师范学院 一种光催化材料制备装置

Families Citing this family (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080166880A1 (en) * 2007-01-08 2008-07-10 Levy David H Delivery device for deposition
US11136667B2 (en) * 2007-01-08 2021-10-05 Eastman Kodak Company Deposition system and method using a delivery head separated from a substrate by gas pressure
US8398770B2 (en) * 2007-09-26 2013-03-19 Eastman Kodak Company Deposition system for thin film formation
US7972898B2 (en) * 2007-09-26 2011-07-05 Eastman Kodak Company Process for making doped zinc oxide
US8182608B2 (en) * 2007-09-26 2012-05-22 Eastman Kodak Company Deposition system for thin film formation
US8211231B2 (en) * 2007-09-26 2012-07-03 Eastman Kodak Company Delivery device for deposition
US20090081360A1 (en) * 2007-09-26 2009-03-26 Fedorovskaya Elena A Oled display encapsulation with the optical property
US20090291209A1 (en) * 2008-05-20 2009-11-26 Asm International N.V. Apparatus and method for high-throughput atomic layer deposition
US9238867B2 (en) 2008-05-20 2016-01-19 Asm International N.V. Apparatus and method for high-throughput atomic layer deposition
US8383202B2 (en) 2008-06-13 2013-02-26 Kateeva, Inc. Method and apparatus for load-locked printing
US9048344B2 (en) 2008-06-13 2015-06-02 Kateeva, Inc. Gas enclosure assembly and system
US10442226B2 (en) 2008-06-13 2019-10-15 Kateeva, Inc. Gas enclosure assembly and system
US8899171B2 (en) 2008-06-13 2014-12-02 Kateeva, Inc. Gas enclosure assembly and system
US9604245B2 (en) 2008-06-13 2017-03-28 Kateeva, Inc. Gas enclosure systems and methods utilizing an auxiliary enclosure
GB0816186D0 (en) * 2008-09-05 2008-10-15 Aviza Technologies Ltd Gas delivery device
US20100037820A1 (en) * 2008-08-13 2010-02-18 Synos Technology, Inc. Vapor Deposition Reactor
US8470718B2 (en) * 2008-08-13 2013-06-25 Synos Technology, Inc. Vapor deposition reactor for forming thin film
EP2159304A1 (en) * 2008-08-27 2010-03-03 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Apparatus and method for atomic layer deposition
EP3471130A1 (en) * 2008-12-04 2019-04-17 Veeco Instruments Inc. Chemical vapor deposition flow inlet elements and methods
FR2956869B1 (fr) * 2010-03-01 2014-05-16 Alex Hr Roustaei Systeme de production de film flexible a haute capacite destine a des cellules photovoltaiques et oled par deposition cyclique des couches
US8758512B2 (en) * 2009-06-08 2014-06-24 Veeco Ald Inc. Vapor deposition reactor and method for forming thin film
EP2281921A1 (en) * 2009-07-30 2011-02-09 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Apparatus and method for atomic layer deposition.
US20110023775A1 (en) * 2009-07-31 2011-02-03 E.I. Du Pont De Nemours And Company Apparatus for atomic layer deposition
US8657959B2 (en) * 2009-07-31 2014-02-25 E I Du Pont De Nemours And Company Apparatus for atomic layer deposition on a moving substrate
US20110076421A1 (en) 2009-09-30 2011-03-31 Synos Technology, Inc. Vapor deposition reactor for forming thin film on curved surface
US20110097488A1 (en) * 2009-10-27 2011-04-28 Kerr Roger S Fluid distribution manifold including mirrored finish plate
US20110097490A1 (en) * 2009-10-27 2011-04-28 Kerr Roger S Fluid distribution manifold including compliant plates
US20110097493A1 (en) * 2009-10-27 2011-04-28 Kerr Roger S Fluid distribution manifold including non-parallel non-perpendicular slots
US20110097487A1 (en) * 2009-10-27 2011-04-28 Kerr Roger S Fluid distribution manifold including bonded plates
US20110097491A1 (en) * 2009-10-27 2011-04-28 Levy David H Conveyance system including opposed fluid distribution manifolds
US20110097492A1 (en) * 2009-10-27 2011-04-28 Kerr Roger S Fluid distribution manifold operating state management system
US20110097489A1 (en) * 2009-10-27 2011-04-28 Kerr Roger S Distribution manifold including multiple fluid communication ports
US20110097494A1 (en) * 2009-10-27 2011-04-28 Kerr Roger S Fluid conveyance system including flexible retaining mechanism
EP2360293A1 (en) 2010-02-11 2011-08-24 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method and apparatus for depositing atomic layers on a substrate
EP2362411A1 (en) 2010-02-26 2011-08-31 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Apparatus and method for reactive ion etching
NL2005049C2 (en) * 2010-07-07 2012-01-10 Levitech B V Method and apparatus for contactlessly advancing substrates.
US8486192B2 (en) 2010-09-30 2013-07-16 Soitec Thermalizing gas injectors for generating increased precursor gas, material deposition systems including such injectors, and related methods
US8133806B1 (en) 2010-09-30 2012-03-13 S.O.I.Tec Silicon On Insulator Technologies Systems and methods for forming semiconductor materials by atomic layer deposition
JP5496073B2 (ja) * 2010-12-21 2014-05-21 三菱電機株式会社 微結晶半導体薄膜製造装置および微結晶半導体薄膜製造方法
EP2481833A1 (en) * 2011-01-31 2012-08-01 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Apparatus for atomic layer deposition
EP2481832A1 (en) * 2011-01-31 2012-08-01 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Apparatus for atomic layer deposition
US8840958B2 (en) * 2011-02-14 2014-09-23 Veeco Ald Inc. Combined injection module for sequentially injecting source precursor and reactant precursor
US20120225207A1 (en) * 2011-03-01 2012-09-06 Applied Materials, Inc. Apparatus and Process for Atomic Layer Deposition
US20120225204A1 (en) * 2011-03-01 2012-09-06 Applied Materials, Inc. Apparatus and Process for Atomic Layer Deposition
US20120225203A1 (en) * 2011-03-01 2012-09-06 Applied Materials, Inc. Apparatus and Process for Atomic Layer Deposition
WO2012129358A1 (en) * 2011-03-23 2012-09-27 Pilkington Group Limited Method of depositing zinc oxide coatings by chemical vapor deposition
EP2688851B1 (en) 2011-03-23 2019-01-23 Pilkington Group Limited Apparatus for depositing thin film coatings and method of deposition utilizing such apparatus
US20120269967A1 (en) * 2011-04-22 2012-10-25 Applied Materials, Inc. Hot Wire Atomic Layer Deposition Apparatus And Methods Of Use
EP2557198A1 (en) 2011-08-10 2013-02-13 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method and apparatus for depositing atomic layers on a substrate
US10066297B2 (en) * 2011-08-31 2018-09-04 Alta Devices, Inc. Tiled showerhead for a semiconductor chemical vapor deposition reactor
US9175393B1 (en) * 2011-08-31 2015-11-03 Alta Devices, Inc. Tiled showerhead for a semiconductor chemical vapor deposition reactor
JP2013082959A (ja) * 2011-10-07 2013-05-09 Sony Corp 自己停止反応成膜装置及び自己停止反応成膜方法
CN104040023B (zh) * 2012-01-16 2016-04-13 株式会社爱发科 成膜装置
NL2008592C2 (en) * 2012-04-03 2013-10-07 Solaytec B V Method for producing a photocell.
TWI565825B (zh) * 2012-06-07 2017-01-11 索泰克公司 沉積系統之氣體注入組件及相關使用方法
US9512519B2 (en) * 2012-12-03 2016-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. Atomic layer deposition apparatus and method
TW201437421A (zh) * 2013-02-20 2014-10-01 Applied Materials Inc 用於旋轉料架原子層沉積之裝置以及方法
NL2010471C2 (en) * 2013-03-18 2014-09-24 Levitech B V Substrate processing apparatus.
US9214254B2 (en) 2013-09-26 2015-12-15 Eastman Kodak Company Ultra-thin AZO with nano-layer alumina passivation
TWI480406B (zh) * 2013-11-28 2015-04-11 Metal Ind Res & Dev Ct 鍍膜設備及輸送模組
US10385446B2 (en) * 2014-01-14 2019-08-20 The Batteries Sp. Z.O.O. Thin film coating method and the manufacturing line for its implementation
US9343678B2 (en) 2014-01-21 2016-05-17 Kateeva, Inc. Apparatus and techniques for electronic device encapsulation
KR101575844B1 (ko) 2014-05-09 2015-12-08 제주대학교 산학협력단 원자층 증착용 헤드 및 이를 구비하는 원자층 증착 장치
CN104046960B (zh) * 2014-06-24 2016-08-17 北京七星华创电子股份有限公司 一种应用于薄膜沉积技术的气体分配器
EP2960059B1 (en) 2014-06-25 2018-10-24 Universal Display Corporation Systems and methods of modulating flow during vapor jet deposition of organic materials
US11267012B2 (en) * 2014-06-25 2022-03-08 Universal Display Corporation Spatial control of vapor condensation using convection
US11220737B2 (en) 2014-06-25 2022-01-11 Universal Display Corporation Systems and methods of modulating flow during vapor jet deposition of organic materials
MX378928B (es) * 2014-10-30 2025-03-11 Centro De Investigacion En Mat Avanzados S C Tobera de inyeccion de aerosoles y su metodo de utilizacion para depositar diferentes recubrimientos mediante deposito quimico de vapor asistido por aerosol.
KR102068882B1 (ko) 2014-11-26 2020-01-21 카티바, 인크. 환경적으로 제어되는 코팅 시스템
KR102420015B1 (ko) * 2015-08-28 2022-07-12 삼성전자주식회사 Cs-ald 장치의 샤워헤드
US10566534B2 (en) 2015-10-12 2020-02-18 Universal Display Corporation Apparatus and method to deliver organic material via organic vapor-jet printing (OVJP)
CH712199A1 (de) * 2016-03-07 2017-09-15 Fofitec Ag Vorrichtung zur Abscheidung dünner Schichten auf einem Substrat und Rollenmaterial mit einem Substrat mit solchen Schichten.
US10294562B2 (en) 2016-04-05 2019-05-21 Aixtron Se Exhaust manifold in a CVD reactor
US11174548B2 (en) 2016-06-03 2021-11-16 The Batteries Sp .Z.O.O. Thin film coating method and the manufacturing line for its implementation
KR101849388B1 (ko) * 2016-06-24 2018-05-31 주식회사 넥서스비 원자층 증착 장비 가스 모듈, 원자층 증착 장비 및 그를 이용한 원자층 증착 방법
US10388721B2 (en) 2017-01-24 2019-08-20 International Business Machines Corporation Conformal capacitor structure formed by a single process
US10895011B2 (en) 2017-03-14 2021-01-19 Eastman Kodak Company Modular thin film deposition system
US11248292B2 (en) 2017-03-14 2022-02-15 Eastman Kodak Company Deposition system with moveable-position web guides
US10400332B2 (en) * 2017-03-14 2019-09-03 Eastman Kodak Company Deposition system with interlocking deposition heads
US10422038B2 (en) * 2017-03-14 2019-09-24 Eastman Kodak Company Dual gas bearing substrate positioning system
US10501848B2 (en) 2017-03-14 2019-12-10 Eastman Kodak Company Deposition system with modular deposition heads
US10550476B2 (en) 2017-03-14 2020-02-04 Eastman Kodak Company Heated gas-bearing backer
US10435788B2 (en) 2017-03-14 2019-10-08 Eastman Kodak Deposition system with repeating motion profile
US20180265970A1 (en) * 2017-03-14 2018-09-20 Eastman Kodak Company Porous gas-bearing backer
US20180265977A1 (en) 2017-03-14 2018-09-20 Eastman Kodak Company Deposition system with vacuum pre-loaded deposition head
US10584413B2 (en) 2017-03-14 2020-03-10 Eastman Kodak Company Vertical system with vacuum pre-loaded deposition head
JP6640781B2 (ja) * 2017-03-23 2020-02-05 キオクシア株式会社 半導体製造装置
JP7296699B2 (ja) * 2018-07-02 2023-06-23 東京エレクトロン株式会社 ガス供給システム、プラズマ処理装置およびガス供給システムの制御方法
CN113196455B (zh) * 2018-11-30 2023-06-13 株式会社明电舍 氧化膜形成装置
JP7098677B2 (ja) * 2020-03-25 2022-07-11 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム
GB2638181A (en) 2024-02-14 2025-08-20 Nanoprint Innovations Ltd Gas manifold

Family Cites Families (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH628600A5 (fr) * 1979-02-14 1982-03-15 Siv Soc Italiana Vetro Procede pour deposer en continu, sur la surface d'un substrat porte a haute temperature, une couche d'une matiere solide et installation pour la mise en oeuvre de ce procede.
FI57975C (fi) 1979-02-28 1980-11-10 Lohja Ab Oy Foerfarande och anordning vid uppbyggande av tunna foereningshinnor
US4590042A (en) * 1984-12-24 1986-05-20 Tegal Corporation Plasma reactor having slotted manifold
DE3869793D1 (de) * 1987-01-27 1992-05-14 Asahi Glass Co Ltd Gaszufuehrungsrohr fuer die reaktive abscheidung aus der gasphase.
JPS63226917A (ja) * 1987-03-17 1988-09-21 Fujitsu Ltd 半導体気相処理装置
DE4011933C2 (de) * 1990-04-12 1996-11-21 Balzers Hochvakuum Verfahren zur reaktiven Oberflächenbehandlung eines Werkstückes sowie Behandlungskammer hierfür
CA2016970A1 (en) * 1990-05-16 1991-11-16 Prasad N. Gadgil Inverted diffusion stagnation point flow reactor for vapor deposition of thin films
US5136975A (en) * 1990-06-21 1992-08-11 Watkins-Johnson Company Injector and method for delivering gaseous chemicals to a surface
US5122391A (en) * 1991-03-13 1992-06-16 Watkins-Johnson Company Method for producing highly conductive and transparent films of tin and fluorine doped indium oxide by APCVD
JP3039583B2 (ja) * 1991-05-30 2000-05-08 株式会社日立製作所 バルブ及びそれを用いた半導体製造装置
US5393563A (en) * 1991-10-29 1995-02-28 Ellis, Jr.; Frank B. Formation of tin oxide films on glass substrates
US5413671A (en) * 1993-08-09 1995-05-09 Advanced Micro Devices, Inc. Apparatus and method for removing deposits from an APCVD system
US5589002A (en) * 1994-03-24 1996-12-31 Applied Materials, Inc. Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing
US6200389B1 (en) * 1994-07-18 2001-03-13 Silicon Valley Group Thermal Systems Llc Single body injector and deposition chamber
US6022414A (en) * 1994-07-18 2000-02-08 Semiconductor Equipment Group, Llc Single body injector and method for delivering gases to a surface
JP3824675B2 (ja) * 1995-03-03 2006-09-20 有限会社デジタル・ウェーブ 結晶製造装置
US5688359A (en) * 1995-07-20 1997-11-18 Micron Technology, Inc. Muffle etch injector assembly
JPH0945624A (ja) * 1995-07-27 1997-02-14 Tokyo Electron Ltd 枚葉式の熱処理装置
US5728224A (en) * 1995-09-13 1998-03-17 Tetra Laval Holdings & Finance S.A. Apparatus and method for manufacturing a packaging material using gaseous phase atmospheric photo chemical vapor deposition to apply a barrier layer to a moving web substrate
JP3360265B2 (ja) * 1996-04-26 2002-12-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US5938851A (en) * 1997-04-14 1999-08-17 Wj Semiconductor Equipment Group, Inc. Exhaust vent assembly for chemical vapor deposition systems
US6126753A (en) * 1998-05-13 2000-10-03 Tokyo Electron Limited Single-substrate-processing CVD apparatus and method
US6289842B1 (en) * 1998-06-22 2001-09-18 Structured Materials Industries Inc. Plasma enhanced chemical vapor deposition system
US6206973B1 (en) * 1999-04-23 2001-03-27 Silicon Valley Group Thermal System Llc Chemical vapor deposition system and method
US6245192B1 (en) * 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
JP4487338B2 (ja) * 1999-08-31 2010-06-23 東京エレクトロン株式会社 成膜処理装置及び成膜処理方法
KR20010062209A (ko) * 1999-12-10 2001-07-07 히가시 데쓰로 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치
US6503330B1 (en) * 1999-12-22 2003-01-07 Genus, Inc. Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
JP3578398B2 (ja) * 2000-06-22 2004-10-20 古河スカイ株式会社 成膜用ガス分散プレート及びその製造方法
CN1328766C (zh) * 2001-01-22 2007-07-25 东京毅力科创株式会社 处理装置和处理方法
SG94753A1 (en) * 2001-02-06 2003-03-18 Inst Of High Performance Compu Microvalve devices
TW548724B (en) * 2001-07-13 2003-08-21 Asml Us Inc Modular injector and exhaust assembly
KR20030038396A (ko) * 2001-11-01 2003-05-16 에이에스엠엘 유에스, 인코포레이티드 우선적인 화학 기상 증착 장치 및 방법
KR100808741B1 (ko) * 2002-01-24 2008-02-29 스미토모 세이미츠 고교 가부시키가이샤 오존 처리 장치
US6793733B2 (en) * 2002-01-25 2004-09-21 Applied Materials Inc. Gas distribution showerhead
JP4158139B2 (ja) * 2002-04-30 2008-10-01 スズキ株式会社 薄膜の製造方法およびその装置
US20040065255A1 (en) * 2002-10-02 2004-04-08 Applied Materials, Inc. Cyclical layer deposition system
US6821563B2 (en) * 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
US7064089B2 (en) 2002-12-10 2006-06-20 Semiconductor Energy Laboratory Co., Ltd. Plasma treatment apparatus and method for plasma treatment
US6888172B2 (en) * 2003-04-11 2005-05-03 Eastman Kodak Company Apparatus and method for encapsulating an OLED formed on a flexible substrate
US7601223B2 (en) * 2003-04-29 2009-10-13 Asm International N.V. Showerhead assembly and ALD methods
JP2005089781A (ja) * 2003-09-12 2005-04-07 Mitsui Eng & Shipbuild Co Ltd 薄膜形成装置
JP4313138B2 (ja) * 2003-09-29 2009-08-12 忠弘 大見 製造装置システム
US20050103265A1 (en) * 2003-11-19 2005-05-19 Applied Materials, Inc., A Delaware Corporation Gas distribution showerhead featuring exhaust apertures
US7413982B2 (en) * 2006-03-29 2008-08-19 Eastman Kodak Company Process for atomic layer deposition
US7456429B2 (en) * 2006-03-29 2008-11-25 Eastman Kodak Company Apparatus for atomic layer deposition
US20080166880A1 (en) * 2007-01-08 2008-07-10 Levy David H Delivery device for deposition
US7789961B2 (en) * 2007-01-08 2010-09-07 Eastman Kodak Company Delivery device comprising gas diffuser for thin film deposition
US11136667B2 (en) * 2007-01-08 2021-10-05 Eastman Kodak Company Deposition system and method using a delivery head separated from a substrate by gas pressure
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
US8182608B2 (en) * 2007-09-26 2012-05-22 Eastman Kodak Company Deposition system for thin film formation
US8211231B2 (en) * 2007-09-26 2012-07-03 Eastman Kodak Company Delivery device for deposition
US20090079328A1 (en) * 2007-09-26 2009-03-26 Fedorovskaya Elena A Thin film encapsulation containing zinc oxide
US8017183B2 (en) * 2007-09-26 2011-09-13 Eastman Kodak Company Organosiloxane materials for selective area deposition of inorganic materials
US8030212B2 (en) * 2007-09-26 2011-10-04 Eastman Kodak Company Process for selective area deposition of inorganic materials
US7572686B2 (en) * 2007-09-26 2009-08-11 Eastman Kodak Company System for thin film deposition utilizing compensating forces
US7972898B2 (en) * 2007-09-26 2011-07-05 Eastman Kodak Company Process for making doped zinc oxide
US8398770B2 (en) * 2007-09-26 2013-03-19 Eastman Kodak Company Deposition system for thin film formation
US7851380B2 (en) * 2007-09-26 2010-12-14 Eastman Kodak Company Process for atomic layer deposition
US20090081356A1 (en) * 2007-09-26 2009-03-26 Fedorovskaya Elena A Process for forming thin film encapsulation layers
US7858144B2 (en) * 2007-09-26 2010-12-28 Eastman Kodak Company Process for depositing organic materials
US20090095222A1 (en) * 2007-10-16 2009-04-16 Alexander Tam Multi-gas spiral channel showerhead

Cited By (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12018857B2 (en) 2008-06-13 2024-06-25 Kateeva, Inc. Gas enclosure assembly and system
US12344014B2 (en) 2008-06-13 2025-07-01 Kateeva, Inc. Gas enclosure assembly and system
US12064979B2 (en) 2008-06-13 2024-08-20 Kateeva, Inc. Low-particle gas enclosure systems and methods
US10434804B2 (en) 2008-06-13 2019-10-08 Kateeva, Inc. Low particle gas enclosure systems and methods
US11975546B2 (en) 2008-06-13 2024-05-07 Kateeva, Inc. Gas enclosure assembly and system
US11633968B2 (en) 2008-06-13 2023-04-25 Kateeva, Inc. Low-particle gas enclosure systems and methods
US10654299B2 (en) 2008-06-13 2020-05-19 Kateeva, Inc. Low-particle gas enclosure systems and methods
CN102803553B (zh) * 2010-02-18 2016-01-20 荷兰应用自然科学研究组织Tno 连续的图案化层沉积
CN102803553A (zh) * 2010-02-18 2012-11-28 荷兰应用自然科学研究组织Tno 连续的图案化层沉积
CN103108984A (zh) * 2010-08-30 2013-05-15 Beneq有限公司 喷嘴头和装置
CN103108984B (zh) * 2010-08-30 2015-09-30 Beneq有限公司 喷嘴头和装置
CN103415648A (zh) * 2011-01-31 2013-11-27 荷兰应用自然科学研究组织Tno 用于原子层沉积的装置
CN103415648B (zh) * 2011-01-31 2016-01-27 荷兰应用自然科学研究组织Tno 用于原子层沉积的装置及方法
CN103828085B (zh) * 2011-08-09 2016-08-17 科迪华公司 面向下的打印设备和方法
CN106113943A (zh) * 2011-08-09 2016-11-16 科迪华公司 面向下的打印设备和方法
US10022966B2 (en) 2011-08-09 2018-07-17 Kateeva, Inc. Face-down printing apparatus and method
US10029497B2 (en) 2011-08-09 2018-07-24 Kateeva, Inc. Apparatus and method for control of print gap
CN103828085A (zh) * 2011-08-09 2014-05-28 科迪华公司 面向下的打印设备和方法
US9656491B1 (en) 2011-08-09 2017-05-23 Kateeva, Inc. Apparatus and method for control of print gap
US9550383B2 (en) 2011-08-09 2017-01-24 Kateeva, Inc. Apparatus and method for control of print gap
US9789715B2 (en) 2011-08-09 2017-10-17 Kateeva, Inc. Apparatus and method for control of print gap
US9302513B2 (en) 2011-08-09 2016-04-05 Kateeva, Inc. Apparatus and method for control of print gap
CN104271798A (zh) * 2012-04-30 2015-01-07 欧司朗有限公司 用于对衬底进行表面处理的装置和方法和用于制造光电子构件的方法
CN105051879A (zh) * 2013-03-15 2015-11-11 应用材料公司 具有光学测量的旋转式气体分配组件
US11107712B2 (en) 2013-12-26 2021-08-31 Kateeva, Inc. Techniques for thermal treatment of electronic devices
US12040203B2 (en) 2013-12-26 2024-07-16 Kateeva, Inc. Techniques for thermal treatment of electronic devices
US11489119B2 (en) 2014-01-21 2022-11-01 Kateeva, Inc. Apparatus and techniques for electronic device encapsulation
US11338319B2 (en) 2014-04-30 2022-05-24 Kateeva, Inc. Gas cushion apparatus and techniques for substrate coating
CN109972118A (zh) * 2017-12-28 2019-07-05 三星显示有限公司 沉积设备
US11499232B2 (en) 2017-12-28 2022-11-15 Samsung Display Co., Ltd. Deposition apparatus and deposition method using the same
CN112513326A (zh) * 2018-07-30 2021-03-16 法国国家科学研究中心 用于气相沉积的紧凑头部和紧凑系统
US12043894B2 (en) 2018-07-30 2024-07-23 Centre National De La Recherche Scientifique Compact head and compact system for vapor deposition
CN112030139A (zh) * 2019-06-04 2020-12-04 金碳洁股份有限公司 循环式磊晶沉积系统
CN110791748B (zh) * 2019-10-15 2024-05-28 江苏卓高新材料科技有限公司 一种微孔薄膜表面沉积装置及方法
CN110791748A (zh) * 2019-10-15 2020-02-14 江苏卓高新材料科技有限公司 一种微孔薄膜表面沉积装置及方法
CN115190820B (zh) * 2019-12-18 2024-12-20 无限纳米技术公司 用于薄膜沉积的设备和方法
CN115190820A (zh) * 2019-12-18 2022-10-14 K·P·穆塞尔曼 用于薄膜沉积的设备和方法
WO2024109529A1 (zh) * 2022-11-25 2024-05-30 江苏微导纳米科技股份有限公司 一种用于沉积薄膜的方法和设备以及薄膜
CN120625016A (zh) * 2025-08-13 2025-09-12 太原师范学院 一种光催化材料制备装置
CN120625016B (zh) * 2025-08-13 2025-10-10 太原师范学院 一种光催化材料制备装置

Also Published As

Publication number Publication date
US8398770B2 (en) 2013-03-19
EP2191037A1 (en) 2010-06-02
JP2010541236A (ja) 2010-12-24
WO2009042044A1 (en) 2009-04-02
TW200934886A (en) 2009-08-16
US20090081885A1 (en) 2009-03-26

Similar Documents

Publication Publication Date Title
CN101809193A (zh) 使用具有空间分隔的反应性气体的气体输送头和移动基材经过输送头的用于形成薄膜的方法和沉积系统
CN101809196B (zh) 用于形成薄膜的沉积系统
CN101578391B (zh) 沉积系统及方法
US8420168B2 (en) Delivery device for deposition
CN101809190B (zh) 由原子层沉积制造薄膜晶体管的方法
US20080166880A1 (en) Delivery device for deposition
US20110097494A1 (en) Fluid conveyance system including flexible retaining mechanism
US20110097493A1 (en) Fluid distribution manifold including non-parallel non-perpendicular slots
US20110097492A1 (en) Fluid distribution manifold operating state management system
US20110097489A1 (en) Distribution manifold including multiple fluid communication ports
US20110097487A1 (en) Fluid distribution manifold including bonded plates
US20110097490A1 (en) Fluid distribution manifold including compliant plates
US20110097491A1 (en) Conveyance system including opposed fluid distribution manifolds
US20110097488A1 (en) Fluid distribution manifold including mirrored finish plate
US20140206137A1 (en) Deposition system for thin film formation

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20100818