JP2010539323A - カルコゲンを提供するための方法および配置 - Google Patents
カルコゲンを提供するための方法および配置 Download PDFInfo
- Publication number
- JP2010539323A JP2010539323A JP2010523539A JP2010523539A JP2010539323A JP 2010539323 A JP2010539323 A JP 2010539323A JP 2010523539 A JP2010523539 A JP 2010523539A JP 2010523539 A JP2010523539 A JP 2010523539A JP 2010539323 A JP2010539323 A JP 2010539323A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- transport channel
- deposition head
- temperature
- chalcogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Thermal Sciences (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Surface Treatment Of Glass (AREA)
- Chemical Vapour Deposition (AREA)
- Glass Compositions (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007043051 | 2007-09-11 | ||
| DE102007047098 | 2007-10-01 | ||
| DE102007047099 | 2007-10-01 | ||
| DE102007048204 | 2007-10-08 | ||
| PCT/EP2008/062061 WO2009034131A2 (en) | 2007-09-11 | 2008-09-11 | Method and arrangement for providing chalcogens |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010539323A true JP2010539323A (ja) | 2010-12-16 |
| JP2010539323A5 JP2010539323A5 (enExample) | 2011-08-25 |
Family
ID=40380095
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010523539A Withdrawn JP2010539323A (ja) | 2007-09-11 | 2008-09-11 | カルコゲンを提供するための方法および配置 |
| JP2010523359A Withdrawn JP2010539679A (ja) | 2007-09-11 | 2008-09-11 | 金属前駆体層を熱変換させて半導体層、およびまたソーラモジュールにする方法および装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010523359A Withdrawn JP2010539679A (ja) | 2007-09-11 | 2008-09-11 | 金属前駆体層を熱変換させて半導体層、およびまたソーラモジュールにする方法および装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US20100151129A1 (enExample) |
| EP (2) | EP2205772A2 (enExample) |
| JP (2) | JP2010539323A (enExample) |
| KR (2) | KR20100052429A (enExample) |
| AU (2) | AU2008297124A1 (enExample) |
| TW (2) | TWI555864B (enExample) |
| WO (2) | WO2009034131A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012255206A (ja) * | 2011-06-08 | 2012-12-27 | Industrial Technology Research Inst | セレン薄膜の蒸着方法、セレン薄膜の蒸着装置、及びプラズマヘッド |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009009022A1 (de) * | 2009-02-16 | 2010-08-26 | Centrotherm Photovoltaics Ag | Verfahren und Vorrichtung zur Beschichtung von flachen Substraten mit Chalkogenen |
| DE102009011695A1 (de) | 2009-03-09 | 2010-09-16 | Centrotherm Photovoltaics Ag | Verfahren und Vorrichtung zur thermischen Umsetzung metallischer Precursorschichten in halbleitende Schichten |
| DE102009011496A1 (de) | 2009-03-06 | 2010-09-16 | Centrotherm Photovoltaics Ag | Verfahren und Vorrichtung zur thermischen Umsetzung metallischer Precursorschichten in halbleitende Schichten mit Chalkogenrückgewinnung |
| DE102009012200A1 (de) | 2009-03-11 | 2010-09-16 | Centrotherm Photovoltaics Ag | Verfahren und Vorrichtung zur thermischen Umsetzung metallischer Precursorschichten in halbleitende Schichten mit Chalkogenquelle |
| KR101245371B1 (ko) * | 2009-06-19 | 2013-03-19 | 한국전자통신연구원 | 태양전지 및 그 제조방법 |
| EP2278625A1 (en) | 2009-07-24 | 2011-01-26 | centrotherm photovoltaics AG | Method and apparatus for deposition of a layer of an Indium Chalcogenide onto a substrate |
| WO2011028957A2 (en) * | 2009-09-02 | 2011-03-10 | Brent Bollman | Methods and devices for processing a precursor layer in a group via environment |
| IT1395908B1 (it) | 2009-09-17 | 2012-11-02 | Advanced Res On Pv Tech S R L | Processo per la produzione di celle solari a film sottili cu(in,ga)se2/cds |
| FR2951022B1 (fr) * | 2009-10-07 | 2012-07-27 | Nexcis | Fabrication de couches minces a proprietes photovoltaiques, a base d'un alliage de type i-iii-vi2, par electro-depots successifs et post-traitement thermique. |
| DE102009053532B4 (de) | 2009-11-18 | 2017-01-05 | Centrotherm Photovoltaics Ag | Verfahren und Vorrichtung zur Herstellung einer Verbindungshalbleiterschicht |
| EP2371991B1 (de) | 2010-03-26 | 2013-01-30 | Saint-Gobain Glass France | Verfahren zum diskontinuierlichen Nachfüllen einer Selenverdampferkammer |
| EP2369033A1 (de) | 2010-03-26 | 2011-09-28 | Saint-Gobain Glass France | Verfahren zum Nachfüllen einer Verdampferkammer |
| EP2369034B1 (de) | 2010-03-26 | 2013-01-30 | Saint-Gobain Glass France | Verfahren zum Nachfüllen einer Selenverdampferkammer |
| DE102010018595A1 (de) | 2010-04-27 | 2011-10-27 | Centrothem Photovoltaics Ag | Verfahren zur Herstellung einer Verbindungshalbleiterschicht |
| JP2012015328A (ja) * | 2010-06-30 | 2012-01-19 | Fujifilm Corp | Cis系膜の製造方法 |
| JP2012015314A (ja) * | 2010-06-30 | 2012-01-19 | Fujifilm Corp | Cis系膜の製造方法 |
| JP2012015323A (ja) * | 2010-06-30 | 2012-01-19 | Fujifilm Corp | Cis系膜の製造方法 |
| DE102010034653A1 (de) | 2010-08-17 | 2012-02-23 | Centrotherm Photovoltaics Ag | Verfahren zur Kondensation von Chalkogendampf sowie Vorrichtung zur Durchführung des Verfahrens |
| DE102010035569A1 (de) | 2010-08-26 | 2012-03-01 | Centrotherm Photovoltaics Ag | Durchlaufofen |
| CN103053008B (zh) * | 2010-08-27 | 2016-05-25 | 法国圣戈班玻璃厂 | 用于对多个多层本体进行热处理的装置和方法 |
| US8883550B2 (en) * | 2010-09-15 | 2014-11-11 | Precursor Energetics, Inc. | Deposition processes for photovoltaic devices |
| KR101371077B1 (ko) * | 2011-03-30 | 2014-03-07 | 씨디에스(주) | 박막형성장치 |
| JP5709730B2 (ja) * | 2011-11-15 | 2015-04-30 | 京セラ株式会社 | 薄膜製造方法 |
| WO2013125818A1 (ko) * | 2012-02-24 | 2013-08-29 | 영남대학교 산학협력단 | 태양 전지 제조 장치 및 태양 전지 제조 방법 |
| US20130309848A1 (en) | 2012-05-16 | 2013-11-21 | Alliance For Sustainable Energy, Llc | High throughput semiconductor deposition system |
| BR112015014013A2 (pt) | 2012-12-20 | 2017-07-11 | Saint Gobain | método para produzir um semicondutor composto e célula solar de película fina |
| US10317139B2 (en) * | 2013-10-09 | 2019-06-11 | United Technologies Corporation | Method and apparatus for processing process-environment-sensitive material |
| DE102013113108B4 (de) * | 2013-11-27 | 2024-08-29 | Hanwha Q Cells Gmbh | Solarzellenherstellungsverfahren |
| CN105363397A (zh) * | 2014-08-19 | 2016-03-02 | 姚小兵 | 一种蒸汽系统 |
| TWI550717B (zh) | 2014-08-25 | 2016-09-21 | 新能光電科技股份有限公司 | 熱處理方法及其所製得之產物 |
| TWI617684B (zh) * | 2016-10-07 | 2018-03-11 | 國家中山科學研究院 | Integrated fast selenium vulcanization process equipment |
| US10190234B1 (en) | 2017-10-30 | 2019-01-29 | Wisconsin Alumni Research Foundation | Continuous system for fabricating multilayer heterostructures via hydride vapor phase epitaxy |
| TWI689455B (zh) * | 2019-07-30 | 2020-04-01 | 群翊工業股份有限公司 | 可防板偏之連續通板的氮氣箱 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2426377A (en) * | 1943-12-07 | 1947-08-26 | Ruben Samuel | Selenium rectifier and method of making |
| JPS5320950B2 (enExample) * | 1972-07-12 | 1978-06-29 | ||
| US4576830A (en) * | 1984-11-05 | 1986-03-18 | Chronar Corp. | Deposition of materials |
| US5248349A (en) * | 1992-05-12 | 1993-09-28 | Solar Cells, Inc. | Process for making photovoltaic devices and resultant product |
| US6202591B1 (en) * | 1998-11-12 | 2001-03-20 | Flex Products, Inc. | Linear aperture deposition apparatus and coating process |
| US6143080A (en) * | 1999-02-02 | 2000-11-07 | Silicon Valley Group Thermal Systems Llc | Wafer processing reactor having a gas flow control system and method |
| JP2001049432A (ja) * | 1999-08-02 | 2001-02-20 | Sony Corp | ワーク移動式反応性スパッタ装置とワーク移動式反応性スパッタ方法 |
| EP1424735B1 (en) * | 2001-07-06 | 2010-07-28 | Honda Giken Kogyo Kabushiki Kaisha | Method for forming light-absorbing layer |
| JP2005133122A (ja) * | 2003-10-29 | 2005-05-26 | Sony Corp | 成膜装置および成膜方法 |
| SE0400582D0 (sv) * | 2004-03-05 | 2004-03-05 | Forskarpatent I Uppsala Ab | Method for in-line process control of the CIGS process |
| MX2007013335A (es) * | 2005-04-26 | 2008-03-24 | First Solar Inc | Sistema y metodo para depositar un material sobre un sustrato. |
| US7931937B2 (en) * | 2005-04-26 | 2011-04-26 | First Solar, Inc. | System and method for depositing a material on a substrate |
| US7955031B2 (en) * | 2005-07-06 | 2011-06-07 | First Solar, Inc. | Material supply system and method |
| US20070111367A1 (en) * | 2005-10-19 | 2007-05-17 | Basol Bulent M | Method and apparatus for converting precursor layers into photovoltaic absorbers |
| CA2649520A1 (en) * | 2006-04-14 | 2007-10-25 | Silica Tech, Llc | Plasma deposition apparatus and method for making solar cells |
| JP2008011467A (ja) * | 2006-06-30 | 2008-01-17 | Toshiba Corp | 表示パネルの撮像方法及び表示パネルの撮像装置 |
| JP2010509779A (ja) * | 2006-11-10 | 2010-03-25 | ソロパワー、インコーポレイテッド | 太陽電池吸収体を形成するための前駆体膜のオープンリール式反応 |
-
2008
- 2008-09-11 TW TW097134932A patent/TWI555864B/zh not_active IP Right Cessation
- 2008-09-11 KR KR1020097021149A patent/KR20100052429A/ko not_active Withdrawn
- 2008-09-11 KR KR1020097021552A patent/KR20100051586A/ko not_active Withdrawn
- 2008-09-11 EP EP08804026A patent/EP2205772A2/en not_active Withdrawn
- 2008-09-11 AU AU2008297124A patent/AU2008297124A1/en not_active Abandoned
- 2008-09-11 WO PCT/EP2008/062061 patent/WO2009034131A2/en not_active Ceased
- 2008-09-11 EP EP08830338.3A patent/EP2205773B1/en not_active Not-in-force
- 2008-09-11 TW TW097134931A patent/TWI424073B/zh not_active IP Right Cessation
- 2008-09-11 WO PCT/EP2008/007466 patent/WO2009033674A2/en not_active Ceased
- 2008-09-11 AU AU2008297944A patent/AU2008297944A1/en not_active Abandoned
- 2008-09-11 US US12/529,872 patent/US20100151129A1/en not_active Abandoned
- 2008-09-11 US US12/528,913 patent/US20100203668A1/en not_active Abandoned
- 2008-09-11 JP JP2010523539A patent/JP2010539323A/ja not_active Withdrawn
- 2008-09-11 JP JP2010523359A patent/JP2010539679A/ja not_active Withdrawn
-
2015
- 2015-08-12 US US14/824,806 patent/US20150368789A1/en not_active Abandoned
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012255206A (ja) * | 2011-06-08 | 2012-12-27 | Industrial Technology Research Inst | セレン薄膜の蒸着方法、セレン薄膜の蒸着装置、及びプラズマヘッド |
Also Published As
| Publication number | Publication date |
|---|---|
| AU2008297124A1 (en) | 2009-03-19 |
| TW200914634A (en) | 2009-04-01 |
| WO2009033674A2 (en) | 2009-03-19 |
| TWI424073B (zh) | 2014-01-21 |
| WO2009034131A3 (en) | 2009-05-22 |
| KR20100052429A (ko) | 2010-05-19 |
| WO2009034131A2 (en) | 2009-03-19 |
| EP2205772A2 (en) | 2010-07-14 |
| KR20100051586A (ko) | 2010-05-17 |
| WO2009033674A3 (en) | 2009-05-22 |
| EP2205773A2 (en) | 2010-07-14 |
| TW200914633A (en) | 2009-04-01 |
| EP2205773B1 (en) | 2014-11-12 |
| TWI555864B (zh) | 2016-11-01 |
| JP2010539679A (ja) | 2010-12-16 |
| US20100151129A1 (en) | 2010-06-17 |
| US20150368789A1 (en) | 2015-12-24 |
| AU2008297944A1 (en) | 2009-03-19 |
| US20100203668A1 (en) | 2010-08-12 |
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