JP2010539323A5 - - Google Patents

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Publication number
JP2010539323A5
JP2010539323A5 JP2010523539A JP2010523539A JP2010539323A5 JP 2010539323 A5 JP2010539323 A5 JP 2010539323A5 JP 2010523539 A JP2010523539 A JP 2010523539A JP 2010523539 A JP2010523539 A JP 2010523539A JP 2010539323 A5 JP2010539323 A5 JP 2010539323A5
Authority
JP
Japan
Prior art keywords
valve
metering
locking means
selenium
metered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2010523539A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010539323A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/EP2008/062061 external-priority patent/WO2009034131A2/en
Publication of JP2010539323A publication Critical patent/JP2010539323A/ja
Publication of JP2010539323A5 publication Critical patent/JP2010539323A5/ja
Withdrawn legal-status Critical Current

Links

JP2010523539A 2007-09-11 2008-09-11 カルコゲンを提供するための方法および配置 Withdrawn JP2010539323A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102007043051 2007-09-11
DE102007047098 2007-10-01
DE102007047099 2007-10-01
DE102007048204 2007-10-08
PCT/EP2008/062061 WO2009034131A2 (en) 2007-09-11 2008-09-11 Method and arrangement for providing chalcogens

Publications (2)

Publication Number Publication Date
JP2010539323A JP2010539323A (ja) 2010-12-16
JP2010539323A5 true JP2010539323A5 (enExample) 2011-08-25

Family

ID=40380095

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2010523539A Withdrawn JP2010539323A (ja) 2007-09-11 2008-09-11 カルコゲンを提供するための方法および配置
JP2010523359A Withdrawn JP2010539679A (ja) 2007-09-11 2008-09-11 金属前駆体層を熱変換させて半導体層、およびまたソーラモジュールにする方法および装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2010523359A Withdrawn JP2010539679A (ja) 2007-09-11 2008-09-11 金属前駆体層を熱変換させて半導体層、およびまたソーラモジュールにする方法および装置

Country Status (7)

Country Link
US (3) US20100151129A1 (enExample)
EP (2) EP2205772A2 (enExample)
JP (2) JP2010539323A (enExample)
KR (2) KR20100052429A (enExample)
AU (2) AU2008297124A1 (enExample)
TW (2) TWI555864B (enExample)
WO (2) WO2009034131A2 (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009009022A1 (de) * 2009-02-16 2010-08-26 Centrotherm Photovoltaics Ag Verfahren und Vorrichtung zur Beschichtung von flachen Substraten mit Chalkogenen
DE102009011695A1 (de) 2009-03-09 2010-09-16 Centrotherm Photovoltaics Ag Verfahren und Vorrichtung zur thermischen Umsetzung metallischer Precursorschichten in halbleitende Schichten
DE102009011496A1 (de) 2009-03-06 2010-09-16 Centrotherm Photovoltaics Ag Verfahren und Vorrichtung zur thermischen Umsetzung metallischer Precursorschichten in halbleitende Schichten mit Chalkogenrückgewinnung
DE102009012200A1 (de) 2009-03-11 2010-09-16 Centrotherm Photovoltaics Ag Verfahren und Vorrichtung zur thermischen Umsetzung metallischer Precursorschichten in halbleitende Schichten mit Chalkogenquelle
KR101245371B1 (ko) * 2009-06-19 2013-03-19 한국전자통신연구원 태양전지 및 그 제조방법
EP2278625A1 (en) 2009-07-24 2011-01-26 centrotherm photovoltaics AG Method and apparatus for deposition of a layer of an Indium Chalcogenide onto a substrate
WO2011028957A2 (en) * 2009-09-02 2011-03-10 Brent Bollman Methods and devices for processing a precursor layer in a group via environment
IT1395908B1 (it) 2009-09-17 2012-11-02 Advanced Res On Pv Tech S R L Processo per la produzione di celle solari a film sottili cu(in,ga)se2/cds
FR2951022B1 (fr) * 2009-10-07 2012-07-27 Nexcis Fabrication de couches minces a proprietes photovoltaiques, a base d'un alliage de type i-iii-vi2, par electro-depots successifs et post-traitement thermique.
DE102009053532B4 (de) 2009-11-18 2017-01-05 Centrotherm Photovoltaics Ag Verfahren und Vorrichtung zur Herstellung einer Verbindungshalbleiterschicht
EP2371991B1 (de) 2010-03-26 2013-01-30 Saint-Gobain Glass France Verfahren zum diskontinuierlichen Nachfüllen einer Selenverdampferkammer
EP2369033A1 (de) 2010-03-26 2011-09-28 Saint-Gobain Glass France Verfahren zum Nachfüllen einer Verdampferkammer
EP2369034B1 (de) 2010-03-26 2013-01-30 Saint-Gobain Glass France Verfahren zum Nachfüllen einer Selenverdampferkammer
DE102010018595A1 (de) 2010-04-27 2011-10-27 Centrothem Photovoltaics Ag Verfahren zur Herstellung einer Verbindungshalbleiterschicht
JP2012015328A (ja) * 2010-06-30 2012-01-19 Fujifilm Corp Ｃｉｓ系膜の製造方法
JP2012015314A (ja) * 2010-06-30 2012-01-19 Fujifilm Corp Ｃｉｓ系膜の製造方法
JP2012015323A (ja) * 2010-06-30 2012-01-19 Fujifilm Corp Ｃｉｓ系膜の製造方法
DE102010034653A1 (de) 2010-08-17 2012-02-23 Centrotherm Photovoltaics Ag Verfahren zur Kondensation von Chalkogendampf sowie Vorrichtung zur Durchführung des Verfahrens
DE102010035569A1 (de) 2010-08-26 2012-03-01 Centrotherm Photovoltaics Ag Durchlaufofen
CN103053008B (zh) * 2010-08-27 2016-05-25 法国圣戈班玻璃厂 用于对多个多层本体进行热处理的装置和方法
US8883550B2 (en) * 2010-09-15 2014-11-11 Precursor Energetics, Inc. Deposition processes for photovoltaic devices
KR101371077B1 (ko) * 2011-03-30 2014-03-07 씨디에스(주) 박막형성장치
TW201250017A (en) * 2011-06-08 2012-12-16 Ind Tech Res Inst Method and apparatus for depositing selenium thin-film and plasma head thereof
JP5709730B2 (ja) * 2011-11-15 2015-04-30 京セラ株式会社 薄膜製造方法
WO2013125818A1 (ko) * 2012-02-24 2013-08-29 영남대학교 산학협력단 태양 전지 제조 장치 및 태양 전지 제조 방법
US20130309848A1 (en) 2012-05-16 2013-11-21 Alliance For Sustainable Energy, Llc High throughput semiconductor deposition system
BR112015014013A2 (pt) 2012-12-20 2017-07-11 Saint Gobain método para produzir um semicondutor composto e célula solar de película fina
US10317139B2 (en) * 2013-10-09 2019-06-11 United Technologies Corporation Method and apparatus for processing process-environment-sensitive material
DE102013113108B4 (de) * 2013-11-27 2024-08-29 Hanwha Q Cells Gmbh Solarzellenherstellungsverfahren
CN105363397A (zh) * 2014-08-19 2016-03-02 姚小兵 一种蒸汽系统
TWI550717B (zh) 2014-08-25 2016-09-21 新能光電科技股份有限公司 熱處理方法及其所製得之產物
TWI617684B (zh) * 2016-10-07 2018-03-11 國家中山科學研究院 Integrated fast selenium vulcanization process equipment
US10190234B1 (en) 2017-10-30 2019-01-29 Wisconsin Alumni Research Foundation Continuous system for fabricating multilayer heterostructures via hydride vapor phase epitaxy
TWI689455B (zh) * 2019-07-30 2020-04-01 群翊工業股份有限公司 可防板偏之連續通板的氮氣箱

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US5248349A (en) * 1992-05-12 1993-09-28 Solar Cells, Inc. Process for making photovoltaic devices and resultant product
US6202591B1 (en) * 1998-11-12 2001-03-20 Flex Products, Inc. Linear aperture deposition apparatus and coating process
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JP2001049432A (ja) * 1999-08-02 2001-02-20 Sony Corp ワーク移動式反応性スパッタ装置とワーク移動式反応性スパッタ方法
EP1424735B1 (en) * 2001-07-06 2010-07-28 Honda Giken Kogyo Kabushiki Kaisha Method for forming light-absorbing layer
JP2005133122A (ja) * 2003-10-29 2005-05-26 Sony Corp 成膜装置および成膜方法
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US7955031B2 (en) * 2005-07-06 2011-06-07 First Solar, Inc. Material supply system and method
US20070111367A1 (en) * 2005-10-19 2007-05-17 Basol Bulent M Method and apparatus for converting precursor layers into photovoltaic absorbers
CA2649520A1 (en) * 2006-04-14 2007-10-25 Silica Tech, Llc Plasma deposition apparatus and method for making solar cells
JP2008011467A (ja) * 2006-06-30 2008-01-17 Toshiba Corp 表示パネルの撮像方法及び表示パネルの撮像装置
JP2010509779A (ja) * 2006-11-10 2010-03-25 ソロパワー、インコーポレイテッド 太陽電池吸収体を形成するための前駆体膜のオープンリール式反応

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