AU2008297124A1 - Method and arrangement for providing chalcogens - Google Patents

Method and arrangement for providing chalcogens Download PDF

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Publication number
AU2008297124A1
AU2008297124A1 AU2008297124A AU2008297124A AU2008297124A1 AU 2008297124 A1 AU2008297124 A1 AU 2008297124A1 AU 2008297124 A AU2008297124 A AU 2008297124A AU 2008297124 A AU2008297124 A AU 2008297124A AU 2008297124 A1 AU2008297124 A1 AU 2008297124A1
Authority
AU
Australia
Prior art keywords
substrates
transport channel
vapour
deposition head
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2008297124A
Other languages
English (en)
Inventor
Robert Michael Hartung
Reinhard Lenz
Dieter Schmid
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centrotherm Photovoltaics AG
Original Assignee
Centrotherm Photovoltaics AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centrotherm Photovoltaics AG filed Critical Centrotherm Photovoltaics AG
Publication of AU2008297124A1 publication Critical patent/AU2008297124A1/en
Abandoned legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Glass Compositions (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Surface Treatment Of Glass (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
AU2008297124A 2007-09-11 2008-09-11 Method and arrangement for providing chalcogens Abandoned AU2008297124A1 (en)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
DE102007043051.7 2007-09-11
DE102007043051 2007-09-11
DE102007047099 2007-10-01
DE102007047098.5 2007-10-01
DE102007047099.3 2007-10-01
DE102007047098 2007-10-01
DE102007048204.5 2007-10-08
DE102007048204 2007-10-08
PCT/EP2008/062061 WO2009034131A2 (en) 2007-09-11 2008-09-11 Method and arrangement for providing chalcogens

Publications (1)

Publication Number Publication Date
AU2008297124A1 true AU2008297124A1 (en) 2009-03-19

Family

ID=40380095

Family Applications (2)

Application Number Title Priority Date Filing Date
AU2008297944A Abandoned AU2008297944A1 (en) 2007-09-11 2008-09-11 Method and apparatus for thermally converting metallic precursor layers into semiconducting layers, and also solar module
AU2008297124A Abandoned AU2008297124A1 (en) 2007-09-11 2008-09-11 Method and arrangement for providing chalcogens

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AU2008297944A Abandoned AU2008297944A1 (en) 2007-09-11 2008-09-11 Method and apparatus for thermally converting metallic precursor layers into semiconducting layers, and also solar module

Country Status (7)

Country Link
US (3) US20100151129A1 (enExample)
EP (2) EP2205772A2 (enExample)
JP (2) JP2010539679A (enExample)
KR (2) KR20100051586A (enExample)
AU (2) AU2008297944A1 (enExample)
TW (2) TWI424073B (enExample)
WO (2) WO2009033674A2 (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009009022A1 (de) * 2009-02-16 2010-08-26 Centrotherm Photovoltaics Ag Verfahren und Vorrichtung zur Beschichtung von flachen Substraten mit Chalkogenen
DE102009011695A1 (de) 2009-03-09 2010-09-16 Centrotherm Photovoltaics Ag Verfahren und Vorrichtung zur thermischen Umsetzung metallischer Precursorschichten in halbleitende Schichten
DE102009012200A1 (de) 2009-03-11 2010-09-16 Centrotherm Photovoltaics Ag Verfahren und Vorrichtung zur thermischen Umsetzung metallischer Precursorschichten in halbleitende Schichten mit Chalkogenquelle
DE102009011496A1 (de) 2009-03-06 2010-09-16 Centrotherm Photovoltaics Ag Verfahren und Vorrichtung zur thermischen Umsetzung metallischer Precursorschichten in halbleitende Schichten mit Chalkogenrückgewinnung
KR101245371B1 (ko) * 2009-06-19 2013-03-19 한국전자통신연구원 태양전지 및 그 제조방법
EP2278625A1 (en) 2009-07-24 2011-01-26 centrotherm photovoltaics AG Method and apparatus for deposition of a layer of an Indium Chalcogenide onto a substrate
WO2011028957A2 (en) * 2009-09-02 2011-03-10 Brent Bollman Methods and devices for processing a precursor layer in a group via environment
IT1395908B1 (it) 2009-09-17 2012-11-02 Advanced Res On Pv Tech S R L Processo per la produzione di celle solari a film sottili cu(in,ga)se2/cds
FR2951022B1 (fr) * 2009-10-07 2012-07-27 Nexcis Fabrication de couches minces a proprietes photovoltaiques, a base d'un alliage de type i-iii-vi2, par electro-depots successifs et post-traitement thermique.
DE102009053532B4 (de) 2009-11-18 2017-01-05 Centrotherm Photovoltaics Ag Verfahren und Vorrichtung zur Herstellung einer Verbindungshalbleiterschicht
EP2369034B1 (de) 2010-03-26 2013-01-30 Saint-Gobain Glass France Verfahren zum Nachfüllen einer Selenverdampferkammer
EP2369033A1 (de) 2010-03-26 2011-09-28 Saint-Gobain Glass France Verfahren zum Nachfüllen einer Verdampferkammer
EP2371991B1 (de) 2010-03-26 2013-01-30 Saint-Gobain Glass France Verfahren zum diskontinuierlichen Nachfüllen einer Selenverdampferkammer
DE102010018595A1 (de) 2010-04-27 2011-10-27 Centrothem Photovoltaics Ag Verfahren zur Herstellung einer Verbindungshalbleiterschicht
JP2012015328A (ja) * 2010-06-30 2012-01-19 Fujifilm Corp Ｃｉｓ系膜の製造方法
JP2012015323A (ja) * 2010-06-30 2012-01-19 Fujifilm Corp Ｃｉｓ系膜の製造方法
JP2012015314A (ja) * 2010-06-30 2012-01-19 Fujifilm Corp Ｃｉｓ系膜の製造方法
DE102010034653A1 (de) 2010-08-17 2012-02-23 Centrotherm Photovoltaics Ag Verfahren zur Kondensation von Chalkogendampf sowie Vorrichtung zur Durchführung des Verfahrens
DE102010035569A1 (de) 2010-08-26 2012-03-01 Centrotherm Photovoltaics Ag Durchlaufofen
KR101590684B1 (ko) * 2010-08-27 2016-02-01 쌩-고벵 글래스 프랑스 복수의 다층체를 열처리하기 위한 장치 및 방법
KR20130143031A (ko) * 2010-09-15 2013-12-30 프리커서 에너제틱스, 인코퍼레이티드. 광기전체를 위한 어닐링 방법
KR101371077B1 (ko) * 2011-03-30 2014-03-07 씨디에스(주) 박막형성장치
TW201250017A (en) * 2011-06-08 2012-12-16 Ind Tech Res Inst Method and apparatus for depositing selenium thin-film and plasma head thereof
JP5709730B2 (ja) * 2011-11-15 2015-04-30 京セラ株式会社 薄膜製造方法
WO2013125818A1 (ko) * 2012-02-24 2013-08-29 영남대학교 산학협력단 태양 전지 제조 장치 및 태양 전지 제조 방법
US20130309848A1 (en) 2012-05-16 2013-11-21 Alliance For Sustainable Energy, Llc High throughput semiconductor deposition system
CN104885191B (zh) 2012-12-20 2017-11-28 法国圣戈班玻璃厂 生产化合物半导体和薄膜太阳能电池的方法
US10317139B2 (en) * 2013-10-09 2019-06-11 United Technologies Corporation Method and apparatus for processing process-environment-sensitive material
DE102013113108B4 (de) * 2013-11-27 2024-08-29 Hanwha Q Cells Gmbh Solarzellenherstellungsverfahren
CN105363397A (zh) * 2014-08-19 2016-03-02 姚小兵 一种蒸汽系统
TWI550717B (zh) 2014-08-25 2016-09-21 新能光電科技股份有限公司 熱處理方法及其所製得之產物
TWI617684B (zh) * 2016-10-07 2018-03-11 國家中山科學研究院 Integrated fast selenium vulcanization process equipment
US10190234B1 (en) 2017-10-30 2019-01-29 Wisconsin Alumni Research Foundation Continuous system for fabricating multilayer heterostructures via hydride vapor phase epitaxy
TWI689455B (zh) * 2019-07-30 2020-04-01 群翊工業股份有限公司 可防板偏之連續通板的氮氣箱

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2426377A (en) * 1943-12-07 1947-08-26 Ruben Samuel Selenium rectifier and method of making
JPS5320950B2 (enExample) * 1972-07-12 1978-06-29
US4576830A (en) * 1984-11-05 1986-03-18 Chronar Corp. Deposition of materials
US5248349A (en) * 1992-05-12 1993-09-28 Solar Cells, Inc. Process for making photovoltaic devices and resultant product
US6202591B1 (en) * 1998-11-12 2001-03-20 Flex Products, Inc. Linear aperture deposition apparatus and coating process
US6143080A (en) * 1999-02-02 2000-11-07 Silicon Valley Group Thermal Systems Llc Wafer processing reactor having a gas flow control system and method
JP2001049432A (ja) * 1999-08-02 2001-02-20 Sony Corp ワーク移動式反応性スパッタ装置とワーク移動式反応性スパッタ方法
DE60237159D1 (de) * 2001-07-06 2010-09-09 Honda Motor Co Ltd Verfahren zur ausbildung einer lichtabsorbierenden schicht
JP2005133122A (ja) * 2003-10-29 2005-05-26 Sony Corp 成膜装置および成膜方法
SE0400582D0 (sv) * 2004-03-05 2004-03-05 Forskarpatent I Uppsala Ab Method for in-line process control of the CIGS process
WO2006116411A2 (en) * 2005-04-26 2006-11-02 First Solar, Inc. System and method for depositing a material on a substrate
US7931937B2 (en) * 2005-04-26 2011-04-26 First Solar, Inc. System and method for depositing a material on a substrate
US7955031B2 (en) * 2005-07-06 2011-06-07 First Solar, Inc. Material supply system and method
US20070111367A1 (en) * 2005-10-19 2007-05-17 Basol Bulent M Method and apparatus for converting precursor layers into photovoltaic absorbers
RU2435874C2 (ru) * 2006-04-14 2011-12-10 СИЛИКА ТЕК, ЭлЭлСи Установка плазменного осаждения и способ изготовления солнечных элементов
JP2008011467A (ja) * 2006-06-30 2008-01-17 Toshiba Corp 表示パネルの撮像方法及び表示パネルの撮像装置
EP2102898A4 (en) * 2006-11-10 2011-06-29 Solopower Inc REEL TO REEL REACTION OF A PRECURSOR FOIL FOR FORMING A SOLAR CELL ABSORPTION LAYER

Also Published As

Publication number Publication date
KR20100052429A (ko) 2010-05-19
EP2205773A2 (en) 2010-07-14
WO2009033674A3 (en) 2009-05-22
TW200914634A (en) 2009-04-01
US20100151129A1 (en) 2010-06-17
TWI555864B (zh) 2016-11-01
WO2009034131A3 (en) 2009-05-22
AU2008297944A1 (en) 2009-03-19
WO2009034131A2 (en) 2009-03-19
TW200914633A (en) 2009-04-01
JP2010539323A (ja) 2010-12-16
KR20100051586A (ko) 2010-05-17
US20150368789A1 (en) 2015-12-24
JP2010539679A (ja) 2010-12-16
EP2205772A2 (en) 2010-07-14
TWI424073B (zh) 2014-01-21
WO2009033674A2 (en) 2009-03-19
US20100203668A1 (en) 2010-08-12
EP2205773B1 (en) 2014-11-12

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Legal Events

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MK4 Application lapsed section 142(2)(d) - no continuation fee paid for the application