JP2010530619A - 垂直コンタクト部を備える電気回路 - Google Patents

垂直コンタクト部を備える電気回路 Download PDF

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Publication number
JP2010530619A
JP2010530619A JP2010512588A JP2010512588A JP2010530619A JP 2010530619 A JP2010530619 A JP 2010530619A JP 2010512588 A JP2010512588 A JP 2010512588A JP 2010512588 A JP2010512588 A JP 2010512588A JP 2010530619 A JP2010530619 A JP 2010530619A
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JP
Japan
Prior art keywords
contact
conductive layer
dielectric layer
opening
disposed
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Pending
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JP2010512588A
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English (en)
Japanese (ja)
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JP2010530619A5 (https=
Inventor
ダウミラー、インゴ
ソンメズ、エルトゥウル
クンツェ、マイク
Original Assignee
ミクロガン ゲーエムベーハー
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Application filed by ミクロガン ゲーエムベーハー filed Critical ミクロガン ゲーエムベーハー
Publication of JP2010530619A publication Critical patent/JP2010530619A/ja
Publication of JP2010530619A5 publication Critical patent/JP2010530619A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
JP2010512588A 2007-06-18 2008-06-16 垂直コンタクト部を備える電気回路 Pending JP2010530619A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007028458 2007-06-18
PCT/EP2008/004838 WO2008155085A1 (de) 2007-06-18 2008-06-16 Elektrische schaltung mit vertikaler kontaktierung

Publications (2)

Publication Number Publication Date
JP2010530619A true JP2010530619A (ja) 2010-09-09
JP2010530619A5 JP2010530619A5 (https=) 2011-07-28

Family

ID=39705044

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2010512588A Pending JP2010530619A (ja) 2007-06-18 2008-06-16 垂直コンタクト部を備える電気回路
JP2010512589A Expired - Fee Related JP5586025B2 (ja) 2007-06-18 2008-06-16 基板の平面を全面に渡って覆うバスを備えた半導体部品、その製造方法、及び半導体部品を備えた装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2010512589A Expired - Fee Related JP5586025B2 (ja) 2007-06-18 2008-06-16 基板の平面を全面に渡って覆うバスを備えた半導体部品、その製造方法、及び半導体部品を備えた装置

Country Status (4)

Country Link
US (2) US8748944B2 (https=)
EP (2) EP2162912B1 (https=)
JP (2) JP2010530619A (https=)
WO (2) WO2008155085A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5748130B2 (ja) 2010-09-08 2015-07-15 大日本印刷株式会社 照明装置、投射装置および投写型映像表示装置
KR20130013189A (ko) 2011-07-27 2013-02-06 삼성전자주식회사 파워 반도체 소자
KR102008326B1 (ko) 2015-02-20 2019-08-07 비샤이 제너럴 세미컨덕터 엘엘씨 큰 본드 패드 및 감소된 접촉 저항을 갖는 질화갈륨계 쇼트키 다이오드

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WO2005079293A2 (en) * 2004-02-12 2005-09-01 International Rectifier Corporation Integrated iii-nitride power devices
JP2006515956A (ja) * 2002-10-08 2006-06-08 グレイト・ウォール・セミコンダクター・コーポレイション パワーｍｏｓｆｅｔ

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Publication number Priority date Publication date Assignee Title
JPH08255908A (ja) * 1994-11-02 1996-10-01 Texas Instr Inc <Ti> 厚い銅の相互接続を持つｌｄｍｏｓダイオードを用いるｅｓｄ保護構造
JPH08139318A (ja) * 1994-11-11 1996-05-31 Fuji Electric Co Ltd 横型電界効果トランジスタ
JP2006515956A (ja) * 2002-10-08 2006-06-08 グレイト・ウォール・セミコンダクター・コーポレイション パワーｍｏｓｆｅｔ
WO2005079293A2 (en) * 2004-02-12 2005-09-01 International Rectifier Corporation Integrated iii-nitride power devices

Also Published As

Publication number Publication date
US8748944B2 (en) 2014-06-10
EP2162912A1 (de) 2010-03-17
WO2008155085A8 (de) 2009-07-30
EP2162912B1 (de) 2019-12-04
WO2008155086A1 (de) 2008-12-24
US20100182073A1 (en) 2010-07-22
EP2165363B1 (de) 2020-07-29
US20100230727A1 (en) 2010-09-16
JP2010530620A (ja) 2010-09-09
WO2008155085A1 (de) 2008-12-24
EP2165363A1 (de) 2010-03-24
JP5586025B2 (ja) 2014-09-10

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