JP2010525603A - 薄膜トランジスタおよびその製造方法 - Google Patents
薄膜トランジスタおよびその製造方法 Download PDFInfo
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- JP2010525603A JP2010525603A JP2010506070A JP2010506070A JP2010525603A JP 2010525603 A JP2010525603 A JP 2010525603A JP 2010506070 A JP2010506070 A JP 2010506070A JP 2010506070 A JP2010506070 A JP 2010506070A JP 2010525603 A JP2010525603 A JP 2010525603A
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- film transistor
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- zinc oxide
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- 239000010409 thin film Substances 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 106
- 238000000034 method Methods 0.000 claims abstract description 82
- 239000011787 zinc oxide Substances 0.000 claims abstract description 53
- 239000004065 semiconductor Substances 0.000 claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 29
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 27
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 20
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000011737 fluorine Substances 0.000 claims abstract description 11
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 11
- 238000001312 dry etching Methods 0.000 claims abstract description 10
- 239000004020 conductor Substances 0.000 claims description 16
- 239000011701 zinc Substances 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 9
- 239000007772 electrode material Substances 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- BHYJAKYACQWUHD-UHFFFAOYSA-N [O-2].[Zn+2].[Mo+4].[In+3] Chemical compound [O-2].[Zn+2].[Mo+4].[In+3] BHYJAKYACQWUHD-UHFFFAOYSA-N 0.000 claims description 4
- ZFEADGRFDTTYIM-UHFFFAOYSA-N [Zn+2].[O-2].[In+3].[Si+4] Chemical compound [Zn+2].[O-2].[In+3].[Si+4] ZFEADGRFDTTYIM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 4
- 229920003023 plastic Polymers 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 4
- BSUHXFDAHXCSQL-UHFFFAOYSA-N [Zn+2].[W+4].[O-2].[In+3] Chemical compound [Zn+2].[W+4].[O-2].[In+3] BSUHXFDAHXCSQL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims 2
- 239000010410 layer Substances 0.000 description 61
- 238000004549 pulsed laser deposition Methods 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- 238000001704 evaporation Methods 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 238000002207 thermal evaporation Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- QENGPZGAWFQWCZ-UHFFFAOYSA-N 3-Methylthiophene Chemical compound CC=1C=CSC=1 QENGPZGAWFQWCZ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000007645 offset printing Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229930192474 thiophene Natural products 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- LQGYQMYQNVKDJW-UHFFFAOYSA-N [O-2].[Zn+2].[W+4].[O-2].[O-2] Chemical compound [O-2].[Zn+2].[W+4].[O-2].[O-2] LQGYQMYQNVKDJW-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000885 poly(2-vinylpyridine) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
1)基板にゲート電極を形成するゲート電極形成ステップ;
2)前記基板および前記ゲート電極上に絶縁層を形成する絶縁層形成ステップ;
3)前記絶縁層上に半導体層を形成する半導体層形成ステップ;および
4)前記半導体層に連結するようにSi、Mo、およびWのうちの1種以上を含む酸化亜鉛系電極材料を用いてソース電極およびドレイン電極を形成するソース電極およびドレイン電極形成ステップ;
を含む薄膜トランジスタの製造方法を提供する。
本発明に係る薄膜トランジスタの製造方法において、前記1)ゲート電極形成ステップの基板は、薄膜トランジスタのための熱力学的および機械的要求事項を満たすことができるガラス、半導体ウエハ(semiconductor wafer)、金属酸化物、セラミック物質、プラスチックなどを用いることができる。特に、前記基板は、ガラスまたはプラスチックであることが好ましいが、これにのみ限定されるものではない。
2)ステップでは、スパッタリング方法でゲート電極配線を形成し、PECVD法を用いてゲート電極20が形成されたガラス基板10の上部面に絶縁層30を形成した。ここで、ゲート絶縁層30は、SiNxで形成した。
3)ステップでは、IZOを用いてスパッタリング法で半導体層40を形成した。
4)ステップでは、スパッタリング法で半導体層40の上部と絶縁層30の上部にSiを含むZnO層を蒸着した後、フォトリソグラフィ法でパターニングしてゲート配線と交差する方向にデータ配線を形成し、ソース電極50とドレイン電極60を形成した。
20:ゲート電極
30:絶縁層
40:半導体層
50:ソース電極
60:ドレイン電極
Claims (18)
- 1)基板にゲート電極を形成するゲート電極形成ステップ;
2)前記基板および前記ゲート電極上に絶縁層を形成する絶縁層形成ステップ;
3)前記絶縁層上に半導体層を形成する半導体層形成ステップ;および
4)前記半導体層に連結するようにSi、Mo、およびWのうちの1種以上を含む酸化亜鉛系電極材料を用いてソース電極およびドレイン電極を形成するソース電極およびドレイン電極形成ステップ;
を含むことを特徴とする薄膜トランジスタの製造方法。 - 前記4)のソース電極およびドレイン電極形成ステップは、前記絶縁層及び前記半導体層が共にカバーされるように、前記絶縁層および前記半導体層上にSi、Mo、またはWのうちの1種以上を含む酸化亜鉛系電極材料を用いた導電性物質層形成ステップ、および前記導電性物質をパターニングする電極パターン形成ステップを含む方法、または前記絶縁層および前記半導体層上にSi、Mo、およびWのうちの1種以上を含む酸化亜鉛系電極を直接印刷してパターニングする方法によって実行されることを特徴とする、請求項1に記載の薄膜トランジスタの製造方法。
- 前記4)ソース電極およびドレイン電極形成ステップのSi、Mo、またはWのうちの1種以上を含む酸化亜鉛系電極は、ISZO(Indium Sillicon Zinc Oxide)、IMZO(Indium molybdenum Zinc Oxide)、またはITZO(Indium Tungsten Zinc Oxide)の酸化物形態で蒸着されて形成されることを特徴とする、請求項1に記載の薄膜トランジスタの製造方法。
- 前記4)ソース電極およびドレイン電極形成ステップのSi、Mo、またはWのうちの1種以上を含む酸化亜鉛系電極は、In2O3/ZnO/SiO(1:1:1mol%)、In2O3/ZnO/MoO3(1:1:1mol%)、またはIn2O3/ZnO/WO3(1:1:1mol%)の含量範囲を有することを特徴とする、請求項1に記載の薄膜トランジスタの製造方法。
- 前記4)ソース電極およびドレイン電極形成ステップのソース電極およびドレイン電極の比抵抗値は、0超過10−3ohm・cm以下であることを特徴とする、請求項1に記載の薄膜トランジスタの製造方法。
- 前記4)ソース電極およびドレイン電極形成ステップにおいてエッチング工程が実行され、前記エッチング工程は、フッ素系ガスを用いてドライエッチング工程を経ることを特徴とする、請求項1に記載の薄膜トランジスタの製造方法。
- 前記フッ素系ガスは、CF4、NF3、またはSF6であることを特徴とする、請求項6に記載の薄膜トランジスタの製造方法。
- 前記4)ソース電極およびドレイン電極形成ステップのソース電極およびドレイン電極の厚さは、50nm以上400nm以下であることを特徴とする、請求項1に記載の薄膜トランジスタの製造方法。
- 前記1)ゲート電極形成ステップの基板は、ガラス、半導体ウエハ(semiconductor wafer)、金属酸化物、セラミック物質、およびプラスチックからなる群から選択されることを特徴とする、請求項1に記載の薄膜トランジスタの製造方法。
- 前記1)のゲート電極形成ステップは、基板上に導電性物質を用いた導電性物質層形成ステップおよび前記導電性物質層をパターニングする電極パターン形成ステップを含む方法、または基板上に導電性物質を直接印刷してパターニングする方法によって実行されることを特徴とする、請求項1に記載の薄膜トランジスタの製造方法。
- 前記3)の半導体層形成ステップは、ZnOと、In、Ga、Sn、およびAlのうちの1種以上と、を含む複合酸化物を用いることを特徴とする、請求項1に記載の薄膜トランジスタの製造方法。
- 前記3)半導体層形成ステップの複合酸化物は、ZTO(Zinc Tin Oxide)、IGZO(Indium Gallium Zinc Oxide)、ZAO(Zinc Aluminum Oxide)、IZO(Indium Zinc Oxide)、およびZnO(Zinc Oxide)からなる群から選択されることを特徴とする、請求項11に記載の薄膜トランジスタの製造方法。
- 前記3)半導体層形成ステップの複合酸化物のZn:Snのモル比は1:1または2:1、Zn:Alのモル比は1:1または2:1、Zn:Inのモル比は1:1または2:1、またはZn:In:Gaのモル比は1:1:1または2:1:1であることを特徴とする、請求項11に記載の薄膜トランジスタの製造方法。
- 基板、ゲート電極、絶縁層、半導体層、ソース電極、およびドレイン電極を含む薄膜トランジスタであって、前記ソース電極およびドレイン電極は、Si、Mo、およびWのうちの1種以上を含む酸化亜鉛系電極を用いる薄膜トランジスタ。
- 前記Si、Mo、およびWのうちの1種以上を含む酸化亜鉛系電極は、ISZO(Indium Sillicon Zinc Oxide)、IMZO(Indium molybdenum Zinc Oxide)、またはITZO(Indium Tungsten Zinc Oxide)の酸化物を用いることを特徴とする、請求項14に記載の薄膜トランジスタ。
- 前記Si、Mo、およびWのうちの1種以上を含む酸化亜鉛系電極は、In2O3/ZnO/SiO(1:1:1mol%)、In2O3/ZnO/MoO3(1:1:1mol%)、またはIn2O3/ZnO/WO3(1:1:1mol%)の含量範囲を有することを特徴とする、請求項14に記載の薄膜トランジスタ。
- 前記Si、Mo、およびWのうちの1種以上を含む酸化亜鉛系電極の比抵抗値は、0超過10−3ohm・cm以下であることを特徴とする、請求項14に記載の薄膜トランジスタ。
- 前記Si、Mo、およびWのうちの1種以上を含む酸化亜鉛系電極は、フッ素系ガスを用いたドライエッチング工程を経て形成されることを特徴とする、請求項14に記載の薄膜トランジスタ。
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