JP2010525595A - Ｉｖ族基板表面上での窒化物半導体部材の層構造 - Google Patents

Ｉｖ族基板表面上での窒化物半導体部材の層構造 Download PDF

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JP2010525595A
JP2010525595A JP2010504724A JP2010504724A JP2010525595A JP 2010525595 A JP2010525595 A JP 2010525595A JP 2010504724 A JP2010504724 A JP 2010504724A JP 2010504724 A JP2010504724 A JP 2010504724A JP 2010525595 A JP2010525595 A JP 2010525595A
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group
substrate
nitride semiconductor
layer
semiconductor member
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ダートガー アルミン
クロスト アロイス
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Azzurro Semiconductors AG
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3466—Crystal orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials

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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
JP2010504724A 2007-04-27 2008-04-28 Ｉｖ族基板表面上での窒化物半導体部材の層構造 Pending JP2010525595A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US92644407P 2007-04-27 2007-04-27
DE102007020979A DE102007020979A1 (de) 2007-04-27 2007-04-27 Nitridhalbleiterbauelement mit Gruppe-III-Nitrid-Schichtstruktur auf einer Gruppe-IV-Substratoberfläche mit höchstens zweizähliger Symmetrie
PCT/EP2008/055181 WO2008132204A2 (de) 2007-04-27 2008-04-28 Nitridhalbleiterbauelement-schichtstruktur auf einer gruppe-iv-substratoberfläche

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JP2012141154A Expired - Fee Related JP5546583B2 (ja) 2007-04-27 2012-06-22 Ｉｉｉ族窒化物層構造を有する窒化物半導体素子、及びその製造方法

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US (1) US20100133658A1 (https=)
EP (1) EP2150970B1 (https=)
JP (2) JP2010525595A (https=)
KR (1) KR20100017413A (https=)
CN (1) CN101689483B (https=)
AT (1) ATE533176T1 (https=)
DE (1) DE102007020979A1 (https=)
ES (1) ES2375591T3 (https=)
IN (1) IN2009DN07391A (https=)
MY (1) MY149217A (https=)
TW (1) TWI455182B (https=)
WO (1) WO2008132204A2 (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012246216A (ja) * 2011-05-25 2012-12-13 Agency For Science Technology & Research 基板上にナノ構造を形成させる方法及びその使用
JP2013070065A (ja) * 2011-09-08 2013-04-18 Toshiba Corp 窒化物半導体素子および窒化物半導体素子の製造方法
JP2013084820A (ja) * 2011-10-11 2013-05-09 Toshiba Corp 半導体発光素子及び半導体ウェーハ
JP2014076925A (ja) * 2012-10-12 2014-05-01 Air Water Inc 半導体基板の製造方法および半導体基板
JP2017085157A (ja) * 2017-01-13 2017-05-18 株式会社東芝 半導体ウェーハ、半導体素子及び窒化物半導体層の製造方法
JP2018022909A (ja) * 2009-09-30 2018-02-08 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 層構造の製造方法

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4829190B2 (ja) * 2007-08-22 2011-12-07 株式会社東芝 発光素子
DE102009051521B4 (de) 2009-10-31 2012-04-26 X-Fab Semiconductor Foundries Ag Herstellung von Siliziumhalbleiterscheiben mit III-V-Schichtstrukturen für High Electron Mobility Transistoren (HEMT) und eine entsprechende Halbleiterschichtanordnung
DE102009051520B4 (de) 2009-10-31 2016-11-03 X-Fab Semiconductor Foundries Ag Verfahren zur Herstellung von Siliziumhalbleiterscheiben mit Schichtstrukturen zur Integration von III-V Halbleiterbauelementen
DE102010027411A1 (de) * 2010-07-15 2012-01-19 Osram Opto Semiconductors Gmbh Halbleiterbauelement, Substrat und Verfahren zur Herstellung einer Halbleiterschichtenfolge
DE102010046215B4 (de) * 2010-09-21 2019-01-03 Infineon Technologies Austria Ag Halbleiterkörper mit verspanntem Bereich, Elektronisches Bauelement und ein Verfahren zum Erzeugen des Halbleiterkörpers.
KR20120032329A (ko) 2010-09-28 2012-04-05 삼성전자주식회사 반도체 소자
DE102010048617A1 (de) * 2010-10-15 2012-04-19 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Halbleiterschichtenfolge, strahlungsemittierender Halbleiterchip und optoelektronisches Bauteil
KR101749694B1 (ko) 2010-12-17 2017-06-22 삼성전자주식회사 반도체 소자 및 그 제조 방법과 상기 반도체 소자를 포함하는 전자 장치
DE102010056409A1 (de) * 2010-12-26 2012-06-28 Azzurro Semiconductors Ag Gruppe-III-Nitrid basierte Schichtenfolge, Halbleiterbauelement, umfassend eine Gruppe-III-Nitrid basierte Schichtenfolge und Verfahren zur Herstellung
DE102011108080B4 (de) * 2011-07-21 2015-08-20 Otto-Von-Guericke-Universität Magdeburg Gruppe-III-Nitrid-basierte Schichtenfolge, deren Verwendung und Verfahren ihrer Herstellung
DE102011114665B4 (de) * 2011-09-30 2023-09-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Nitrid-Verbindungshalbleiter-Bauelements
KR102061696B1 (ko) 2013-11-05 2020-01-03 삼성전자주식회사 반극성 질화물 반도체 구조체 및 이의 제조 방법
US9917156B1 (en) 2016-09-02 2018-03-13 IQE, plc Nucleation layer for growth of III-nitride structures
US12100936B2 (en) * 2019-10-09 2024-09-24 Panasonic Intellectual Property Management Co., Ltd. Nitride semiconductor structure, nitride semiconductor device, and method for fabricating the device
DE102021107019A1 (de) * 2021-03-22 2022-09-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung einer halbleiterschichtenfolge und halbleiterschichtenfolge

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11135832A (ja) * 1997-10-26 1999-05-21 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体及びその製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2830814B2 (ja) * 1996-01-19 1998-12-02 日本電気株式会社 窒化ガリウム系化合物半導体の結晶成長方法、及び半導体レーザの製造方法
US6562644B2 (en) * 2000-08-08 2003-05-13 Matsushita Electric Industrial Co., Ltd. Semiconductor substrate, method of manufacturing the semiconductor substrate, semiconductor device and pattern forming method
JP2002185041A (ja) * 2000-12-15 2002-06-28 Nobuhiko Sawaki 半導体素子
JP3577463B2 (ja) * 2001-02-20 2004-10-13 昭和電工株式会社 Ｉｉｉ族窒化物半導体発光ダイオード
US6541799B2 (en) * 2001-02-20 2003-04-01 Showa Denko K.K. Group-III nitride semiconductor light-emitting diode
DE10151092B4 (de) * 2001-10-13 2012-10-04 Azzurro Semiconductors Ag Verfahren zur Herstellung von planaren und rißfreien Gruppe-III-Nitrid-basierten Lichtemitterstrukturen auf Silizium Substrat
US20030132433A1 (en) * 2002-01-15 2003-07-17 Piner Edwin L. Semiconductor structures including a gallium nitride material component and a silicon germanium component
JP2004356114A (ja) * 2003-05-26 2004-12-16 Tadahiro Omi Ｐチャネルパワーｍｉｓ電界効果トランジスタおよびスイッチング回路
TWI240439B (en) * 2003-09-24 2005-09-21 Sanken Electric Co Ltd Nitride semiconductor device and manufacturing method thereof
FR2860248B1 (fr) * 2003-09-26 2006-02-17 Centre Nat Rech Scient Procede de realisation de substrats autosupportes de nitrures d'elements iii par hetero-epitaxie sur une couche sacrificielle
GB0505752D0 (en) * 2005-03-21 2005-04-27 Element Six Ltd Diamond based substrate for gan devices
WO2007034761A1 (en) * 2005-09-20 2007-03-29 Showa Denko K.K. Semiconductor device and method for fabrication thereof
JP2007273946A (ja) * 2006-03-10 2007-10-18 Covalent Materials Corp 窒化物半導体単結晶膜

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11135832A (ja) * 1997-10-26 1999-05-21 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体及びその製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018022909A (ja) * 2009-09-30 2018-02-08 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 層構造の製造方法
JP2012246216A (ja) * 2011-05-25 2012-12-13 Agency For Science Technology & Research 基板上にナノ構造を形成させる方法及びその使用
JP2013070065A (ja) * 2011-09-08 2013-04-18 Toshiba Corp 窒化物半導体素子および窒化物半導体素子の製造方法
JP2013084820A (ja) * 2011-10-11 2013-05-09 Toshiba Corp 半導体発光素子及び半導体ウェーハ
US9065003B2 (en) 2011-10-11 2015-06-23 Kabushiki Kaisha Toshiba Semiconductor light emitting device and semiconductor wafer
JP2014076925A (ja) * 2012-10-12 2014-05-01 Air Water Inc 半導体基板の製造方法および半導体基板
JP2017085157A (ja) * 2017-01-13 2017-05-18 株式会社東芝 半導体ウェーハ、半導体素子及び窒化物半導体層の製造方法

Also Published As

Publication number Publication date
TWI455182B (zh) 2014-10-01
EP2150970B1 (de) 2011-11-09
CN101689483B (zh) 2012-07-04
JP5546583B2 (ja) 2014-07-09
EP2150970A2 (de) 2010-02-10
CN101689483A (zh) 2010-03-31
ATE533176T1 (de) 2011-11-15
IN2009DN07391A (https=) 2015-07-24
WO2008132204A2 (de) 2008-11-06
ES2375591T3 (es) 2012-03-02
WO2008132204A3 (de) 2009-01-22
DE102007020979A1 (de) 2008-10-30
US20100133658A1 (en) 2010-06-03
JP2012231156A (ja) 2012-11-22
HK1138941A1 (en) 2010-09-03
MY149217A (en) 2013-07-31
KR20100017413A (ko) 2010-02-16
TW200913018A (en) 2009-03-16

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