DE102007020979A1 - Nitridhalbleiterbauelement mit Gruppe-III-Nitrid-Schichtstruktur auf einer Gruppe-IV-Substratoberfläche mit höchstens zweizähliger Symmetrie - Google Patents

Nitridhalbleiterbauelement mit Gruppe-III-Nitrid-Schichtstruktur auf einer Gruppe-IV-Substratoberfläche mit höchstens zweizähliger Symmetrie Download PDF

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Publication number
DE102007020979A1
DE102007020979A1 DE102007020979A DE102007020979A DE102007020979A1 DE 102007020979 A1 DE102007020979 A1 DE 102007020979A1 DE 102007020979 A DE102007020979 A DE 102007020979A DE 102007020979 A DE102007020979 A DE 102007020979A DE 102007020979 A1 DE102007020979 A1 DE 102007020979A1
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Prior art keywords
group
substrate
symmetry
nitride semiconductor
semiconductor device
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Ceased
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DE102007020979A
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German (de)
English (en)
Inventor
Armin Dr. Dadgar
Alois Prof. Dr. Krost
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Azzurro Semiconductors AG
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Azzurro Semiconductors AG
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Priority to DE102007020979A priority Critical patent/DE102007020979A1/de
Priority to CN2008800225012A priority patent/CN101689483B/zh
Priority to IN7391DEN2009 priority patent/IN2009DN07391A/en
Priority to EP08749803A priority patent/EP2150970B1/de
Priority to ES08749803T priority patent/ES2375591T3/es
Priority to TW097115627A priority patent/TWI455182B/zh
Priority to MYPI20094519A priority patent/MY149217A/en
Priority to JP2010504724A priority patent/JP2010525595A/ja
Priority to US12/451,151 priority patent/US20100133658A1/en
Priority to PCT/EP2008/055181 priority patent/WO2008132204A2/de
Priority to HK10105635.8A priority patent/HK1138941B/xx
Priority to KR1020097024727A priority patent/KR20100017413A/ko
Priority to AT08749803T priority patent/ATE533176T1/de
Publication of DE102007020979A1 publication Critical patent/DE102007020979A1/de
Priority to JP2012141154A priority patent/JP5546583B2/ja
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3466—Crystal orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials

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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
DE102007020979A 2007-04-27 2007-04-27 Nitridhalbleiterbauelement mit Gruppe-III-Nitrid-Schichtstruktur auf einer Gruppe-IV-Substratoberfläche mit höchstens zweizähliger Symmetrie Ceased DE102007020979A1 (de)

Priority Applications (14)

Application Number Priority Date Filing Date Title
DE102007020979A DE102007020979A1 (de) 2007-04-27 2007-04-27 Nitridhalbleiterbauelement mit Gruppe-III-Nitrid-Schichtstruktur auf einer Gruppe-IV-Substratoberfläche mit höchstens zweizähliger Symmetrie
JP2010504724A JP2010525595A (ja) 2007-04-27 2008-04-28 Ｉｖ族基板表面上での窒化物半導体部材の層構造
US12/451,151 US20100133658A1 (en) 2007-04-27 2008-04-28 Nitride semiconductor component layer structure on a group iv substrate surface
EP08749803A EP2150970B1 (de) 2007-04-27 2008-04-28 Nitridhalbleiterbauelement-schichtstruktur auf einer gruppe-iv-substratoberfläche und herstellungsverfahren
ES08749803T ES2375591T3 (es) 2007-04-27 2008-04-28 Estructura de capas de un componente semiconductor de nitruro sobre una superficie de substrato del grupo iv y procedimiento para su fabricación.
TW097115627A TWI455182B (zh) 2007-04-27 2008-04-28 第四族基板表面上的氮化物半導體裝置夾層架構
MYPI20094519A MY149217A (en) 2007-04-27 2008-04-28 Nitride semiconductor component layer structure on a group iv substrate surface and fabrication method
CN2008800225012A CN101689483B (zh) 2007-04-27 2008-04-28 第ⅳ族衬底表面上的氮化物半导体元件层结构
IN7391DEN2009 IN2009DN07391A (https=) 2007-04-27 2008-04-28
PCT/EP2008/055181 WO2008132204A2 (de) 2007-04-27 2008-04-28 Nitridhalbleiterbauelement-schichtstruktur auf einer gruppe-iv-substratoberfläche
HK10105635.8A HK1138941B (en) 2007-04-27 2008-04-28 Nitride semi-conductor component layer structure on a group iv substrate surface
KR1020097024727A KR20100017413A (ko) 2007-04-27 2008-04-28 Ⅳ족 기판 표면상의 질화물 반도체 컴포넌트 층 구조
AT08749803T ATE533176T1 (de) 2007-04-27 2008-04-28 Nitridhalbleiterbauelement-schichtstruktur auf einer gruppe-iv-substratoberfläche und herstellungsverfahren
JP2012141154A JP5546583B2 (ja) 2007-04-27 2012-06-22 Ｉｉｉ族窒化物層構造を有する窒化物半導体素子、及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102007020979A DE102007020979A1 (de) 2007-04-27 2007-04-27 Nitridhalbleiterbauelement mit Gruppe-III-Nitrid-Schichtstruktur auf einer Gruppe-IV-Substratoberfläche mit höchstens zweizähliger Symmetrie

Publications (1)

Publication Number Publication Date
DE102007020979A1 true DE102007020979A1 (de) 2008-10-30

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DE102007020979A Ceased DE102007020979A1 (de) 2007-04-27 2007-04-27 Nitridhalbleiterbauelement mit Gruppe-III-Nitrid-Schichtstruktur auf einer Gruppe-IV-Substratoberfläche mit höchstens zweizähliger Symmetrie

Country Status (12)

Country Link
US (1) US20100133658A1 (https=)
EP (1) EP2150970B1 (https=)
JP (2) JP2010525595A (https=)
KR (1) KR20100017413A (https=)
CN (1) CN101689483B (https=)
AT (1) ATE533176T1 (https=)
DE (1) DE102007020979A1 (https=)
ES (1) ES2375591T3 (https=)
IN (1) IN2009DN07391A (https=)
MY (1) MY149217A (https=)
TW (1) TWI455182B (https=)
WO (1) WO2008132204A2 (https=)

Cited By (4)

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Publication number Priority date Publication date Assignee Title
WO2011039181A1 (de) * 2009-09-30 2011-04-07 Osram Opto Semiconductors Gmbh Verfahren zur herstellung einer leuchtdiode
DE102010027411A1 (de) * 2010-07-15 2012-01-19 Osram Opto Semiconductors Gmbh Halbleiterbauelement, Substrat und Verfahren zur Herstellung einer Halbleiterschichtenfolge
EP2434532A1 (en) * 2010-09-28 2012-03-28 Samsung Electronics Co., Ltd. Semiconductor devices and methods of manufacturing the same
WO2022200058A1 (de) * 2021-03-22 2022-09-29 Ams-Osram International Gmbh Verfahren zur herstellung einer halbleiterschichtenfolge und halbleiterschichtenfolge

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JP4829190B2 (ja) * 2007-08-22 2011-12-07 株式会社東芝 発光素子
DE102009051521B4 (de) 2009-10-31 2012-04-26 X-Fab Semiconductor Foundries Ag Herstellung von Siliziumhalbleiterscheiben mit III-V-Schichtstrukturen für High Electron Mobility Transistoren (HEMT) und eine entsprechende Halbleiterschichtanordnung
DE102009051520B4 (de) 2009-10-31 2016-11-03 X-Fab Semiconductor Foundries Ag Verfahren zur Herstellung von Siliziumhalbleiterscheiben mit Schichtstrukturen zur Integration von III-V Halbleiterbauelementen
DE102010046215B4 (de) * 2010-09-21 2019-01-03 Infineon Technologies Austria Ag Halbleiterkörper mit verspanntem Bereich, Elektronisches Bauelement und ein Verfahren zum Erzeugen des Halbleiterkörpers.
DE102010048617A1 (de) * 2010-10-15 2012-04-19 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Halbleiterschichtenfolge, strahlungsemittierender Halbleiterchip und optoelektronisches Bauteil
KR101749694B1 (ko) 2010-12-17 2017-06-22 삼성전자주식회사 반도체 소자 및 그 제조 방법과 상기 반도체 소자를 포함하는 전자 장치
DE102010056409A1 (de) * 2010-12-26 2012-06-28 Azzurro Semiconductors Ag Gruppe-III-Nitrid basierte Schichtenfolge, Halbleiterbauelement, umfassend eine Gruppe-III-Nitrid basierte Schichtenfolge und Verfahren zur Herstellung
JP2012246216A (ja) * 2011-05-25 2012-12-13 Agency For Science Technology & Research 基板上にナノ構造を形成させる方法及びその使用
DE102011108080B4 (de) * 2011-07-21 2015-08-20 Otto-Von-Guericke-Universität Magdeburg Gruppe-III-Nitrid-basierte Schichtenfolge, deren Verwendung und Verfahren ihrer Herstellung
JP5127978B1 (ja) * 2011-09-08 2013-01-23 株式会社東芝 窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の製造方法
DE102011114665B4 (de) * 2011-09-30 2023-09-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Nitrid-Verbindungshalbleiter-Bauelements
JP5175967B1 (ja) * 2011-10-11 2013-04-03 株式会社東芝 半導体発光素子及び半導体ウェーハ
JP6156833B2 (ja) * 2012-10-12 2017-07-05 エア・ウォーター株式会社 半導体基板の製造方法
KR102061696B1 (ko) 2013-11-05 2020-01-03 삼성전자주식회사 반극성 질화물 반도체 구조체 및 이의 제조 방법
US9917156B1 (en) 2016-09-02 2018-03-13 IQE, plc Nucleation layer for growth of III-nitride structures
JP6264628B2 (ja) * 2017-01-13 2018-01-24 アルパッド株式会社 半導体ウェーハ、半導体素子及び窒化物半導体層の製造方法
US12100936B2 (en) * 2019-10-09 2024-09-24 Panasonic Intellectual Property Management Co., Ltd. Nitride semiconductor structure, nitride semiconductor device, and method for fabricating the device

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Cited By (13)

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Publication number Priority date Publication date Assignee Title
KR101808197B1 (ko) * 2009-09-30 2017-12-12 오스람 옵토 세미컨덕터스 게엠베하 발광 다이오드를 제조하기 위한 방법
DE102009047881A1 (de) * 2009-09-30 2011-04-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Leuchtdiode
DE102009047881B4 (de) 2009-09-30 2022-03-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer epitaktisch hergestellten Schichtstruktur
CN102576656A (zh) * 2009-09-30 2012-07-11 欧司朗光电半导体有限公司 用于制造发光二极管的方法
US8828768B2 (en) 2009-09-30 2014-09-09 Osram Opto Semiconductors Gmbh Method for producing a light-emitting diode
WO2011039181A1 (de) * 2009-09-30 2011-04-07 Osram Opto Semiconductors Gmbh Verfahren zur herstellung einer leuchtdiode
US9184337B2 (en) 2009-09-30 2015-11-10 Osram Opto Semiconductors Gmbh Method for producing a light-emitting diode
CN102576656B (zh) * 2009-09-30 2016-01-20 欧司朗光电半导体有限公司 用于制造发光二极管的方法
DE102010027411A1 (de) * 2010-07-15 2012-01-19 Osram Opto Semiconductors Gmbh Halbleiterbauelement, Substrat und Verfahren zur Herstellung einer Halbleiterschichtenfolge
US8952419B2 (en) 2010-09-28 2015-02-10 Samsung Electronics Co., Ltd. Semiconductor devices and methods of manufacturing the same
US9449817B2 (en) 2010-09-28 2016-09-20 Samsung Electronics Co., Ltd. Semiconductor devices and methods of manufacturing the same
EP2434532A1 (en) * 2010-09-28 2012-03-28 Samsung Electronics Co., Ltd. Semiconductor devices and methods of manufacturing the same
WO2022200058A1 (de) * 2021-03-22 2022-09-29 Ams-Osram International Gmbh Verfahren zur herstellung einer halbleiterschichtenfolge und halbleiterschichtenfolge

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Publication number Publication date
TWI455182B (zh) 2014-10-01
EP2150970B1 (de) 2011-11-09
CN101689483B (zh) 2012-07-04
JP5546583B2 (ja) 2014-07-09
EP2150970A2 (de) 2010-02-10
CN101689483A (zh) 2010-03-31
ATE533176T1 (de) 2011-11-15
IN2009DN07391A (https=) 2015-07-24
WO2008132204A2 (de) 2008-11-06
ES2375591T3 (es) 2012-03-02
WO2008132204A3 (de) 2009-01-22
US20100133658A1 (en) 2010-06-03
JP2012231156A (ja) 2012-11-22
JP2010525595A (ja) 2010-07-22
HK1138941A1 (en) 2010-09-03
MY149217A (en) 2013-07-31
KR20100017413A (ko) 2010-02-16
TW200913018A (en) 2009-03-16

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