JP2010514146A - 半導体装置及び放熱能力を向上させた半導体装置の製造方法 - Google Patents
半導体装置及び放熱能力を向上させた半導体装置の製造方法 Download PDFInfo
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- JP2010514146A JP2010514146A JP2009523857A JP2009523857A JP2010514146A JP 2010514146 A JP2010514146 A JP 2010514146A JP 2009523857 A JP2009523857 A JP 2009523857A JP 2009523857 A JP2009523857 A JP 2009523857A JP 2010514146 A JP2010514146 A JP 2010514146A
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
【選択図】図3
Description
11 基板
12、110、210 ハウジング
13 ヒートシンク
14、112、212 リード
106、206 半導体ダイ
130 ボイド
200 半導体装置
202 導電性取着領域
208 層間材
220 金属プレート
Claims (23)
- 基板に実装可能な半導体装置であって、該半導体装置には:
半導体ダイと;
第1取着面及び第2取着面を有する導電性取着領域であって、前記第1取着面を前記半導体ダイと電気的に導通するよう設ける該導電性取着領域と;
前記半導体ダイ及び前記層間材を少なくとも部分的に包囲するハウジングであって、前記導電性取着領域の前記第2取着面を通して配設する凹部を有する該ハウジングと;
前記凹部内に配置し、前記ハウジングに固定する誘電、熱伝導性の層間材と;
前記凹部内に配置し、前記層間材に固定する金属プレートと、
を備えること、を特徴とする半導体装置。 - 前記半導体装置には、電力用半導体装置を備えること、を特徴とする請求項1に記載の半導体装置。
- 前記電力用半導体装置には、整流器を備えること、を特徴とする請求項2に記載の半導体装置。
- 前記整流器には、ブリッジ整流器を備えること、を特徴とする請求項3に記載の半導体装置。
- 前記半導体装置には、表面実装可能な装置を備えること、を特徴とする請求項1に記載の半導体装置。
- 前記半導体装置には、スルーホール実装可能な装置を備えること、を特徴とする請求項1に記載の半導体装置。
- 前記半導体装置には、集積回路を備えること、を特徴とする請求項1に記載の半導体装置。
- 前記集積回路には、チップスケールパッケージを備えること、を特徴とする請求項7に記載の半導体装置。
- 前記導電性取着領域には、銅パッド、半田ボール、リード、リードフレーム、及びリードフレーム端子を備えること、を特徴とする請求項8に記載の半導体装置。
- 前記層間材を、熱伝導性接着剤とすること、を特徴とする請求項1に記載の半導体装置。
- 前記層間材には、スクリーン印刷層を備えること、を特徴とする請求項1に記載の半導体装置。
- 前記ハウジングには、モールドコンパウンドを更に備えること、を特徴とする請求項1に記載の半導体装置。
- 基板に実装可能な半導体装置を製造する方法であって、該方法には:
半導体ダイを、導電性取着領域の第1取着部分と電気的に導通するよう設けること;
誘電、熱伝導性層間材を前記導電性取着領域の第2取着部分に塗布すること;
ヒートシンクを前記層間材に固定すること;及び
少なくとも部分的に、前記ダイ、前記層間材及び前記ヒートシンクを包囲するハウジングを設けること、
を備えることを特徴とする方法。 - 前記層間材を金属プレートとすること、を特徴とする請求項13に記載の半導体装置を製造する方法。
- 前記層間材を前記プレートに塗布して、該層間材を該プレートに固定すること、を特徴とする請求項14に記載の半導体装置を製造する方法。
- 前記層間材を前記プレートに塗布して後、前記層間材を前記第2取着部分に塗布すること、を特徴とする請求項15に記載の半導体装置を製造する方法。
- 前記層間材を、前記プレートを前記取着領域に固定する接着剤とすること、を特徴とする請求項16に記載の半導体装置を製造する方法。
- 前記ハウジングを、前記半導体装置の外装パッケージを形成するように、成形すること、を更に備えることを特徴とする請求項13に記載の半導体装置を製造する方法。
- 前記層間材を、スクリーン印刷工程により塗布すること、を特徴とする請求項16に記載の半導体装置を製造する方法。
- 前記半導体装置には、表面実装可能な装置を備えること、を特徴とする請求項13に記載の半導体装置を製造する方法。
- 前記半導体装置には、スルーホール実装可能な装置を備えること、を特徴とする請求項13に記載の半導体装置を製造する方法。
- 前記導電性取着領域には、銅パッド、半田ボール、リード、リードフレーム、及びリードフレーム端子の1つを備えること、を特徴とする請求項13に記載の半導体装置を製造する方法。
- 前記半導体装置には、電力用半導体装置を備えること、を特徴とする請求項13に記載の半導体装置を製造する方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US83735306P | 2006-08-11 | 2006-08-11 | |
US60/837,353 | 2006-08-11 | ||
US11/827,042 | 2007-07-09 | ||
US11/827,042 US8048714B2 (en) | 2006-08-11 | 2007-07-09 | Semiconductor device and method for manufacturing a semiconductor device having improved heat dissipation capabilities |
PCT/US2007/017768 WO2008021220A2 (en) | 2006-08-11 | 2007-08-10 | Semiconductor device and method for manufacturing a semiconductor device having improved heat dissipation capabilities |
Publications (2)
Publication Number | Publication Date |
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JP2010514146A true JP2010514146A (ja) | 2010-04-30 |
JP5413778B2 JP5413778B2 (ja) | 2014-02-12 |
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JP2009523857A Active JP5413778B2 (ja) | 2006-08-11 | 2007-08-10 | 放熱能力を向上させた半導体装置の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8048714B2 (ja) |
EP (1) | EP2057665B1 (ja) |
JP (1) | JP5413778B2 (ja) |
HU (1) | HUE042308T2 (ja) |
TW (1) | TWI438878B (ja) |
WO (1) | WO2008021220A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017028060A (ja) * | 2015-07-21 | 2017-02-02 | 株式会社デンソー | 電子装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013220880B4 (de) * | 2013-10-15 | 2016-08-18 | Infineon Technologies Ag | Elektronisches Halbleitergehäuse mit einer elektrisch isolierenden, thermischen Schnittstellenstruktur auf einer Diskontinuität einer Verkapselungsstruktur sowie ein Herstellungsverfahren dafür und eine elektronische Anordung dies aufweisend |
DE102019104010A1 (de) * | 2019-02-18 | 2020-08-20 | Infineon Technologies Austria Ag | Elektronisches modul mit verbesserter wärmeabfuhr und dessen herstellung |
US20230015323A1 (en) * | 2021-07-19 | 2023-01-19 | Texas Instruments Incorporated | Semiconductor package with topside cooling |
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JPS6025261A (ja) * | 1983-07-21 | 1985-02-08 | Toshiba Corp | 半導体装置 |
JPH1093015A (ja) * | 1996-09-11 | 1998-04-10 | Hitachi Ltd | 半導体装置 |
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JP2001291793A (ja) * | 2000-04-06 | 2001-10-19 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
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JPS58100447A (ja) | 1981-12-11 | 1983-06-15 | Hitachi Ltd | 樹脂封止型半導体装置およびその製造方法 |
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JPH0437052A (ja) * | 1990-05-31 | 1992-02-07 | Sharp Corp | プラスチックパッケージ |
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JPH06151657A (ja) | 1992-11-06 | 1994-05-31 | Sanken Electric Co Ltd | 半導体装置及びその製造方法 |
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JP2001308241A (ja) * | 2001-04-02 | 2001-11-02 | Sanken Electric Co Ltd | 樹脂封止形リードフレーム組立体 |
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JP2003124437A (ja) | 2001-10-19 | 2003-04-25 | Mitsubishi Electric Corp | 半導体装置 |
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-
2007
- 2007-07-09 US US11/827,042 patent/US8048714B2/en active Active
- 2007-07-31 TW TW096128004A patent/TWI438878B/zh active
- 2007-08-10 WO PCT/US2007/017768 patent/WO2008021220A2/en active Application Filing
- 2007-08-10 HU HUE07836688A patent/HUE042308T2/hu unknown
- 2007-08-10 EP EP07836688.7A patent/EP2057665B1/en active Active
- 2007-08-10 JP JP2009523857A patent/JP5413778B2/ja active Active
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JPS6025261A (ja) * | 1983-07-21 | 1985-02-08 | Toshiba Corp | 半導体装置 |
JPH1093015A (ja) * | 1996-09-11 | 1998-04-10 | Hitachi Ltd | 半導体装置 |
JPH10125826A (ja) * | 1996-10-24 | 1998-05-15 | Hitachi Ltd | 半導体装置及びその製法 |
JPH11204724A (ja) * | 1997-11-13 | 1999-07-30 | Mitsubishi Electric Corp | パワーモジュール |
JP2001291793A (ja) * | 2000-04-06 | 2001-10-19 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
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JP2017028060A (ja) * | 2015-07-21 | 2017-02-02 | 株式会社デンソー | 電子装置 |
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Publication number | Publication date |
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EP2057665A2 (en) | 2009-05-13 |
JP5413778B2 (ja) | 2014-02-12 |
EP2057665B1 (en) | 2019-01-23 |
WO2008021220A2 (en) | 2008-02-21 |
EP2057665A4 (en) | 2016-01-06 |
US20080036073A1 (en) | 2008-02-14 |
TWI438878B (zh) | 2014-05-21 |
US8048714B2 (en) | 2011-11-01 |
TW200824079A (en) | 2008-06-01 |
HUE042308T2 (hu) | 2019-06-28 |
WO2008021220A3 (en) | 2014-01-09 |
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