JP5413778B2 - 放熱能力を向上させた半導体装置の製造方法 - Google Patents
放熱能力を向上させた半導体装置の製造方法 Download PDFInfo
- Publication number
- JP5413778B2 JP5413778B2 JP2009523857A JP2009523857A JP5413778B2 JP 5413778 B2 JP5413778 B2 JP 5413778B2 JP 2009523857 A JP2009523857 A JP 2009523857A JP 2009523857 A JP2009523857 A JP 2009523857A JP 5413778 B2 JP5413778 B2 JP 5413778B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- interlayer material
- manufacturing
- housing
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 90
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 230000017525 heat dissipation Effects 0.000 title description 7
- 239000000463 material Substances 0.000 claims description 52
- 239000011229 interlayer Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 239000011529 conductive interlayer Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 238000007650 screen-printing Methods 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 claims description 7
- 230000001070 adhesive effect Effects 0.000 claims description 7
- 238000004891 communication Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 description 18
- 239000004593 Epoxy Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000001721 transfer moulding Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
11 基板
12、110、210 ハウジング
13 ヒートシンク
14、112、212 リード
106、206 半導体ダイ
130 ボイド
200 半導体装置
202 導電性取着領域
208 層間材
220 金属プレート
Claims (10)
- 基板に実装可能なブリッジ整流器である整流器を備える電力用半導体装置を製造する方法であって、該方法は、
半導体ダイを、導電性取着領域の第1取着面と電気的に導通するよう設けること;
上記導電性取着領域は表と裏に第1取着面と第2取着面を設けること;
少なくとも部分的に半導体のダイと上記導電性取着領域をおおうハウジングに凹部を設けること;
上記の凹部は上記導電性取着領域の第2取着面と同じ側に設けること;
上記ハウジングの上記凹部の形成が終わった後、絶縁性で熱伝導性の層間材を上記凹部の表面に塗布すること;
上記絶縁性で熱伝導性の層間材は凹部の上側の端から下側の端まで広がるようにすること;
上記絶縁性で熱伝導性の層間材は高い誘電率と高い熱伝導率をもつこと;
上記絶縁性で熱伝導性の層間材にヒートシンクを固定すること;
上記ヒートシンクは凹部の上側の端から端までを覆う長さがあり、ヒートシンクが直接接触するのは上記絶縁性で熱伝導性の層間材と上記ハウジングだけであること;
上記絶縁性で熱伝導性の層間材と上記導電性取着領域の第2取着面の間にはいくらかのハウジングが存在すること;
を備えることを特徴とする半導体装置を製造する方法。 - 前記ヒートシンクを金属プレートとすること、を特徴とする請求項1に記載の半導体装置を製造する方法。
- 絶縁性で熱伝導性の層間材を前記プレートに塗布して、該層間材を該プレートに固定すること、を特徴とする請求項2に記載の半導体装置を製造する方法。
- 前記絶縁性で熱伝導性の層間材を前記プレートに塗布して後、前記絶縁性で熱伝導性の層間材を前記凹部の上面に塗布すること、を特徴とする請求項3に記載の半導体装置を製造する方法。
- 前記絶縁性で熱伝導性の層間材を、前記プレートを前記ハウジングに固定する接着剤とすること、を特徴とする請求項4に記載の半導体装置を製造する方法。
- 前記ハウジングを、前記半導体装置の外装パッケージを形成するように、成形すること、を更に備えることを特徴とする請求項1に記載の半導体装置を製造する方法。
- 前記絶縁性で熱伝導性の層間材を、スクリーン印刷工程により塗布すること、を特徴とする請求項4に記載の半導体装置を製造する方法。
- 前記半導体装置は、表面実装可能な装置を備えること、を特徴とする請求項1に記載の半導体装置を製造する方法。
- 前記半導体装置は、スルーホール実装可能な装置を備えること、を特徴とする請求項1に記載の半導体装置を製造する方法。
- 前記導電性取着領域は、銅パッド、半田ボール、リード、リードフレーム、及びリードフレーム端子の1つを備えること、を特徴とする請求項1に記載の半導体装置を製造する方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US83735306P | 2006-08-11 | 2006-08-11 | |
US60/837,353 | 2006-08-11 | ||
US11/827,042 | 2007-07-09 | ||
US11/827,042 US8048714B2 (en) | 2006-08-11 | 2007-07-09 | Semiconductor device and method for manufacturing a semiconductor device having improved heat dissipation capabilities |
PCT/US2007/017768 WO2008021220A2 (en) | 2006-08-11 | 2007-08-10 | Semiconductor device and method for manufacturing a semiconductor device having improved heat dissipation capabilities |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010514146A JP2010514146A (ja) | 2010-04-30 |
JP5413778B2 true JP5413778B2 (ja) | 2014-02-12 |
Family
ID=39049906
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009523857A Active JP5413778B2 (ja) | 2006-08-11 | 2007-08-10 | 放熱能力を向上させた半導体装置の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8048714B2 (ja) |
EP (1) | EP2057665B1 (ja) |
JP (1) | JP5413778B2 (ja) |
HU (1) | HUE042308T2 (ja) |
TW (1) | TWI438878B (ja) |
WO (1) | WO2008021220A2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013220880B4 (de) * | 2013-10-15 | 2016-08-18 | Infineon Technologies Ag | Elektronisches Halbleitergehäuse mit einer elektrisch isolierenden, thermischen Schnittstellenstruktur auf einer Diskontinuität einer Verkapselungsstruktur sowie ein Herstellungsverfahren dafür und eine elektronische Anordung dies aufweisend |
JP6432461B2 (ja) * | 2015-07-21 | 2018-12-05 | 株式会社デンソー | 電子装置 |
DE102019104010A1 (de) * | 2019-02-18 | 2020-08-20 | Infineon Technologies Austria Ag | Elektronisches modul mit verbesserter wärmeabfuhr und dessen herstellung |
US20230015323A1 (en) * | 2021-07-19 | 2023-01-19 | Texas Instruments Incorporated | Semiconductor package with topside cooling |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58100447A (ja) | 1981-12-11 | 1983-06-15 | Hitachi Ltd | 樹脂封止型半導体装置およびその製造方法 |
JPS5982754A (ja) * | 1982-11-02 | 1984-05-12 | Matsushita Electronics Corp | 樹脂封止型半導体装置 |
JPS6025261A (ja) * | 1983-07-21 | 1985-02-08 | Toshiba Corp | 半導体装置 |
JPS63107159A (ja) | 1986-10-24 | 1988-05-12 | Toshiba Corp | 半導体装置 |
US5216283A (en) | 1990-05-03 | 1993-06-01 | Motorola, Inc. | Semiconductor device having an insertable heat sink and method for mounting the same |
JPH0437052A (ja) * | 1990-05-31 | 1992-02-07 | Sharp Corp | プラスチックパッケージ |
JPH05144983A (ja) * | 1991-11-22 | 1993-06-11 | Mitsubishi Electric Corp | 樹脂封止型半導体装置 |
JPH06151657A (ja) | 1992-11-06 | 1994-05-31 | Sanken Electric Co Ltd | 半導体装置及びその製造方法 |
US5691567A (en) | 1995-09-19 | 1997-11-25 | National Semiconductor Corporation | Structure for attaching a lead frame to a heat spreader/heat slug structure |
JP3516789B2 (ja) * | 1995-11-15 | 2004-04-05 | 三菱電機株式会社 | 半導体パワーモジュール |
JP3201277B2 (ja) * | 1996-09-11 | 2001-08-20 | 株式会社日立製作所 | 半導体装置 |
JPH10125826A (ja) * | 1996-10-24 | 1998-05-15 | Hitachi Ltd | 半導体装置及びその製法 |
JP3390661B2 (ja) * | 1997-11-13 | 2003-03-24 | 三菱電機株式会社 | パワーモジュール |
US6130473A (en) | 1998-04-02 | 2000-10-10 | National Semiconductor Corporation | Lead frame chip scale package |
US6329714B1 (en) | 1999-11-01 | 2001-12-11 | General Semiconductor, Inc. | Hybrid S.C. devices and method of manufacture thereof |
JP3446826B2 (ja) * | 2000-04-06 | 2003-09-16 | 沖電気工業株式会社 | 半導体装置及びその製造方法 |
JP3737673B2 (ja) * | 2000-05-23 | 2006-01-18 | 株式会社ルネサステクノロジ | 半導体装置 |
KR100370231B1 (ko) * | 2000-06-13 | 2003-01-29 | 페어차일드코리아반도체 주식회사 | 리드프레임의 배면에 직접 부착되는 절연방열판을구비하는 전력 모듈 패키지 |
JP2001308241A (ja) * | 2001-04-02 | 2001-11-02 | Sanken Electric Co Ltd | 樹脂封止形リードフレーム組立体 |
KR100442847B1 (ko) * | 2001-09-17 | 2004-08-02 | 페어차일드코리아반도체 주식회사 | 3차원 구조를 갖는 전력 반도체 모듈 및 그 제조방법 |
JP2003124437A (ja) | 2001-10-19 | 2003-04-25 | Mitsubishi Electric Corp | 半導体装置 |
JP2005353805A (ja) * | 2004-06-10 | 2005-12-22 | Toshiba Corp | 半導体装置及びその製造方法 |
-
2007
- 2007-07-09 US US11/827,042 patent/US8048714B2/en active Active
- 2007-07-31 TW TW096128004A patent/TWI438878B/zh active
- 2007-08-10 WO PCT/US2007/017768 patent/WO2008021220A2/en active Application Filing
- 2007-08-10 HU HUE07836688A patent/HUE042308T2/hu unknown
- 2007-08-10 EP EP07836688.7A patent/EP2057665B1/en active Active
- 2007-08-10 JP JP2009523857A patent/JP5413778B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
EP2057665A2 (en) | 2009-05-13 |
EP2057665B1 (en) | 2019-01-23 |
WO2008021220A2 (en) | 2008-02-21 |
EP2057665A4 (en) | 2016-01-06 |
US20080036073A1 (en) | 2008-02-14 |
TWI438878B (zh) | 2014-05-21 |
US8048714B2 (en) | 2011-11-01 |
TW200824079A (en) | 2008-06-01 |
HUE042308T2 (hu) | 2019-06-28 |
JP2010514146A (ja) | 2010-04-30 |
WO2008021220A3 (en) | 2014-01-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6922339B2 (en) | Heat dissipating structure of printed circuit board and fabricating method thereof | |
JP2010500754A (ja) | 放熱能力を向上させた半導体装置 | |
JP6044473B2 (ja) | 電子装置およびその電子装置の製造方法 | |
JP2008103615A (ja) | 電子部品搭載多層配線基板及びその製造方法 | |
CN109494202A (zh) | 一种半导体芯片封装方法及封装结构 | |
JP2008140954A (ja) | 放熱配線基板とその製造方法並びにこれを用いた発光モジュール | |
JP5413778B2 (ja) | 放熱能力を向上させた半導体装置の製造方法 | |
TWI419271B (zh) | 半導體裝置及製造半導體裝置之方法 | |
JP2004363183A (ja) | 電子部品の放熱構造 | |
CN101523596A (zh) | 具有改进的散热性能的半导体器件 | |
WO2014181509A1 (ja) | 多層基板およびこれを用いた電子装置、電子装置の製造方法 | |
CN101595557A (zh) | 半导体器件及用于制造具有改善的散热能力的半导体器件的方法 | |
JP2795063B2 (ja) | 混成集積回路装置 | |
JP2010010569A (ja) | 回路装置およびその製造方法 | |
JP2002100710A (ja) | 半導体装置および半導体装置の製造方法 | |
WO2014208006A1 (ja) | 電子装置およびその電子装置の製造方法 | |
KR20180117846A (ko) | 주형을 이용한 일체형 히트싱크 제조방법 | |
JP2009253206A (ja) | 樹脂封止型半導体装置およびその実装構造 | |
JP2007043011A (ja) | 電子機器の放熱構造 | |
JP2015012061A (ja) | 電子装置およびその電子装置の製造方法 | |
JP2024071904A (ja) | 回路基板および電子機器 | |
CN117293101A (zh) | 一种功率模组及其制作方法、功率设备 | |
JP2001135921A (ja) | 電子部品の実装構造 | |
JP2000040772A (ja) | 半導体装置及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100617 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110413 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120112 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120124 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120424 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120502 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120518 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121204 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130304 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130325 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130404 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130422 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130502 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130516 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130528 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20131008 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20131101 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5413778 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |