HUE042308T2 - Félvezetõ eszköz és eljárás javított hõdisszipációs képességû félvezetõ eszköz gyártására - Google Patents

Félvezetõ eszköz és eljárás javított hõdisszipációs képességû félvezetõ eszköz gyártására

Info

Publication number
HUE042308T2
HUE042308T2 HUE07836688A HUE07836688A HUE042308T2 HU E042308 T2 HUE042308 T2 HU E042308T2 HU E07836688 A HUE07836688 A HU E07836688A HU E07836688 A HUE07836688 A HU E07836688A HU E042308 T2 HUE042308 T2 HU E042308T2
Authority
HU
Hungary
Prior art keywords
semiconductor device
manufacturing
heat dissipation
improved heat
dissipation capabilities
Prior art date
Application number
HUE07836688A
Other languages
English (en)
Inventor
Ta-Te Chou
Xiong-Jie Zhang
Xian Li
Hai Fu
Yong-Qi Tian
Original Assignee
Vishay Gen Semiconductor Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vishay Gen Semiconductor Llc filed Critical Vishay Gen Semiconductor Llc
Publication of HUE042308T2 publication Critical patent/HUE042308T2/hu

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334Auxiliary members in encapsulations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
HUE07836688A 2006-08-11 2007-08-10 Félvezetõ eszköz és eljárás javított hõdisszipációs képességû félvezetõ eszköz gyártására HUE042308T2 (hu)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US83735306P 2006-08-11 2006-08-11
US11/827,042 US8048714B2 (en) 2006-08-11 2007-07-09 Semiconductor device and method for manufacturing a semiconductor device having improved heat dissipation capabilities

Publications (1)

Publication Number Publication Date
HUE042308T2 true HUE042308T2 (hu) 2019-06-28

Family

ID=39049906

Family Applications (1)

Application Number Title Priority Date Filing Date
HUE07836688A HUE042308T2 (hu) 2006-08-11 2007-08-10 Félvezetõ eszköz és eljárás javított hõdisszipációs képességû félvezetõ eszköz gyártására

Country Status (6)

Country Link
US (1) US8048714B2 (hu)
EP (1) EP2057665B1 (hu)
JP (1) JP5413778B2 (hu)
HU (1) HUE042308T2 (hu)
TW (1) TWI438878B (hu)
WO (1) WO2008021220A2 (hu)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013220880B4 (de) * 2013-10-15 2016-08-18 Infineon Technologies Ag Elektronisches Halbleitergehäuse mit einer elektrisch isolierenden, thermischen Schnittstellenstruktur auf einer Diskontinuität einer Verkapselungsstruktur sowie ein Herstellungsverfahren dafür und eine elektronische Anordung dies aufweisend
JP6432461B2 (ja) * 2015-07-21 2018-12-05 株式会社デンソー 電子装置
DE102019104010A1 (de) * 2019-02-18 2020-08-20 Infineon Technologies Austria Ag Elektronisches modul mit verbesserter wärmeabfuhr und dessen herstellung
US20230015323A1 (en) * 2021-07-19 2023-01-19 Texas Instruments Incorporated Semiconductor package with topside cooling

Family Cites Families (22)

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Publication number Priority date Publication date Assignee Title
JPS58100447A (ja) 1981-12-11 1983-06-15 Hitachi Ltd 樹脂封止型半導体装置およびその製造方法
JPS5982754A (ja) * 1982-11-02 1984-05-12 Matsushita Electronics Corp 樹脂封止型半導体装置
JPS6025261A (ja) * 1983-07-21 1985-02-08 Toshiba Corp 半導体装置
JPS63107159A (ja) 1986-10-24 1988-05-12 Toshiba Corp 半導体装置
US5216283A (en) 1990-05-03 1993-06-01 Motorola, Inc. Semiconductor device having an insertable heat sink and method for mounting the same
JPH0437052A (ja) * 1990-05-31 1992-02-07 Sharp Corp プラスチックパッケージ
JPH05144983A (ja) * 1991-11-22 1993-06-11 Mitsubishi Electric Corp 樹脂封止型半導体装置
JPH06151657A (ja) 1992-11-06 1994-05-31 Sanken Electric Co Ltd 半導体装置及びその製造方法
US5691567A (en) 1995-09-19 1997-11-25 National Semiconductor Corporation Structure for attaching a lead frame to a heat spreader/heat slug structure
JP3516789B2 (ja) * 1995-11-15 2004-04-05 三菱電機株式会社 半導体パワーモジュール
JP3201277B2 (ja) * 1996-09-11 2001-08-20 株式会社日立製作所 半導体装置
JPH10125826A (ja) * 1996-10-24 1998-05-15 Hitachi Ltd 半導体装置及びその製法
JP3390661B2 (ja) * 1997-11-13 2003-03-24 三菱電機株式会社 パワーモジュール
US6130473A (en) 1998-04-02 2000-10-10 National Semiconductor Corporation Lead frame chip scale package
US6329714B1 (en) 1999-11-01 2001-12-11 General Semiconductor, Inc. Hybrid S.C. devices and method of manufacture thereof
JP3446826B2 (ja) * 2000-04-06 2003-09-16 沖電気工業株式会社 半導体装置及びその製造方法
JP3737673B2 (ja) * 2000-05-23 2006-01-18 株式会社ルネサステクノロジ 半導体装置
KR100370231B1 (ko) * 2000-06-13 2003-01-29 페어차일드코리아반도체 주식회사 리드프레임의 배면에 직접 부착되는 절연방열판을구비하는 전력 모듈 패키지
JP2001308241A (ja) * 2001-04-02 2001-11-02 Sanken Electric Co Ltd 樹脂封止形リードフレーム組立体
KR100442847B1 (ko) * 2001-09-17 2004-08-02 페어차일드코리아반도체 주식회사 3차원 구조를 갖는 전력 반도체 모듈 및 그 제조방법
JP2003124437A (ja) 2001-10-19 2003-04-25 Mitsubishi Electric Corp 半導体装置
JP2005353805A (ja) * 2004-06-10 2005-12-22 Toshiba Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
EP2057665A2 (en) 2009-05-13
JP5413778B2 (ja) 2014-02-12
EP2057665B1 (en) 2019-01-23
WO2008021220A2 (en) 2008-02-21
EP2057665A4 (en) 2016-01-06
US20080036073A1 (en) 2008-02-14
TWI438878B (zh) 2014-05-21
US8048714B2 (en) 2011-11-01
TW200824079A (en) 2008-06-01
JP2010514146A (ja) 2010-04-30
WO2008021220A3 (en) 2014-01-09

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