JP2010283307A5 - - Google Patents
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- Publication number
- JP2010283307A5 JP2010283307A5 JP2009137721A JP2009137721A JP2010283307A5 JP 2010283307 A5 JP2010283307 A5 JP 2010283307A5 JP 2009137721 A JP2009137721 A JP 2009137721A JP 2009137721 A JP2009137721 A JP 2009137721A JP 2010283307 A5 JP2010283307 A5 JP 2010283307A5
- Authority
- JP
- Japan
- Prior art keywords
- insulator
- conductive line
- insulating film
- semiconductor substrate
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009137721A JP5491077B2 (ja) | 2009-06-08 | 2009-06-08 | 半導体装置、及び半導体装置の製造方法 |
| EP10161984.9A EP2261968B1 (en) | 2009-06-08 | 2010-05-05 | Method of manufacturing a semiconductor device |
| US12/782,889 US8350300B2 (en) | 2009-06-08 | 2010-05-19 | Semiconductor device having air gaps in multilayer wiring structure |
| CN201010196500.9A CN101908525B (zh) | 2009-06-08 | 2010-06-03 | 半导体器件以及制造所述半导体器件的方法 |
| US13/707,887 US8748210B2 (en) | 2009-06-08 | 2012-12-07 | Method of manufacturing semiconductor device having air gaps in multilayer wiring structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009137721A JP5491077B2 (ja) | 2009-06-08 | 2009-06-08 | 半導体装置、及び半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010283307A JP2010283307A (ja) | 2010-12-16 |
| JP2010283307A5 true JP2010283307A5 (enExample) | 2012-07-26 |
| JP5491077B2 JP5491077B2 (ja) | 2014-05-14 |
Family
ID=42712730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009137721A Expired - Fee Related JP5491077B2 (ja) | 2009-06-08 | 2009-06-08 | 半導体装置、及び半導体装置の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8350300B2 (enExample) |
| EP (1) | EP2261968B1 (enExample) |
| JP (1) | JP5491077B2 (enExample) |
| CN (1) | CN101908525B (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5422455B2 (ja) * | 2010-03-23 | 2014-02-19 | パナソニック株式会社 | 固体撮像装置 |
| JP6184061B2 (ja) | 2012-05-29 | 2017-08-23 | キヤノン株式会社 | 積層型半導体装置及び電子機器 |
| US8921901B1 (en) * | 2013-06-10 | 2014-12-30 | United Microelectronics Corp. | Stacked CMOS image sensor and signal processor wafer structure |
| JP6856974B2 (ja) * | 2015-03-31 | 2021-04-14 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子および電子機器 |
| CN114744002A (zh) * | 2015-03-31 | 2022-07-12 | 索尼半导体解决方案公司 | 半导体装置 |
| US10211146B2 (en) | 2016-05-12 | 2019-02-19 | Globalfoundries Inc. | Air gap over transistor gate and related method |
| US10157777B2 (en) | 2016-05-12 | 2018-12-18 | Globalfoundries Inc. | Air gap over transistor gate and related method |
| US10910416B2 (en) | 2016-08-25 | 2021-02-02 | Sony Semiconductor Solutions Corporation | Semiconductor device, image pickup device, and method for manufacturing semiconductor device |
| US20230268369A1 (en) * | 2020-07-13 | 2023-08-24 | Sony Semiconductor Solutions Corporation | Wiring structure, method of manufacturing the same, and imaging device |
| CN113644087A (zh) * | 2021-08-10 | 2021-11-12 | 长江先进存储产业创新中心有限责任公司 | 相变存储器及其制造方法 |
| US12341058B2 (en) | 2022-02-04 | 2025-06-24 | Globalfoundries Singapore Pte. Ltd. | Air gap through at least two metal layers |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL181611C (nl) * | 1978-11-14 | 1987-09-16 | Philips Nv | Werkwijze ter vervaardiging van een bedradingssysteem, alsmede een halfgeleiderinrichting voorzien van een dergelijk bedradingssysteem. |
| JPH0536841A (ja) | 1991-08-01 | 1993-02-12 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JP2836542B2 (ja) * | 1995-10-17 | 1998-12-14 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP3129284B2 (ja) * | 1998-05-08 | 2001-01-29 | 日本電気株式会社 | 半導集積回路装置の製造方法 |
| US6211561B1 (en) * | 1998-11-16 | 2001-04-03 | Conexant Systems, Inc. | Interconnect structure and method employing air gaps between metal lines and between metal layers |
| JP2001015592A (ja) * | 1999-06-28 | 2001-01-19 | Sony Corp | 半導体装置 |
| US6423629B1 (en) * | 2000-05-31 | 2002-07-23 | Kie Y. Ahn | Multilevel copper interconnects with low-k dielectrics and air gaps |
| US6984577B1 (en) * | 2000-09-20 | 2006-01-10 | Newport Fab, Llc | Damascene interconnect structure and fabrication method having air gaps between metal lines and metal layers |
| JP3481222B2 (ja) * | 2001-09-07 | 2003-12-22 | 松下電器産業株式会社 | 配線構造及びその設計方法 |
| US6713835B1 (en) * | 2003-05-22 | 2004-03-30 | International Business Machines Corporation | Method for manufacturing a multi-level interconnect structure |
| US20070035816A1 (en) * | 2003-05-26 | 2007-02-15 | Roel Daamen | Method of manufacturing a semiconductor device having a porous dielectric layer and air gaps |
| US7071532B2 (en) * | 2003-09-30 | 2006-07-04 | International Business Machines Corporation | Adjustable self-aligned air gap dielectric for low capacitance wiring |
| US7094689B2 (en) * | 2004-07-20 | 2006-08-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Air gap interconnect structure and method thereof |
| JP4717598B2 (ja) * | 2004-12-16 | 2011-07-06 | キヤノン株式会社 | レーザー回路基板 |
| US7214920B2 (en) * | 2005-05-06 | 2007-05-08 | Micron Technology, Inc. | Pixel with spatially varying metal route positions |
| WO2007020688A1 (ja) * | 2005-08-17 | 2007-02-22 | Fujitsu Limited | 半導体装置及びその製造方法 |
| JP2007184788A (ja) * | 2006-01-06 | 2007-07-19 | Nikon Corp | 固体撮像装置 |
| US7557424B2 (en) * | 2007-01-03 | 2009-07-07 | International Business Machines Corporation | Reversible electric fuse and antifuse structures for semiconductor devices |
| KR100843233B1 (ko) * | 2007-01-25 | 2008-07-03 | 삼성전자주식회사 | 배선층의 양측벽에 인접하여 에어갭을 갖는 반도체 소자 및그 제조방법 |
| KR100850273B1 (ko) * | 2007-03-08 | 2008-08-04 | 삼성전자주식회사 | 멀티 비트 전기 기계적 메모리 소자 및 그의 제조방법 |
| US7659595B2 (en) * | 2007-07-16 | 2010-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Embedded bonding pad for backside illuminated image sensor |
| JP5036841B2 (ja) | 2010-03-31 | 2012-09-26 | 株式会社日立製作所 | 通信システム |
-
2009
- 2009-06-08 JP JP2009137721A patent/JP5491077B2/ja not_active Expired - Fee Related
-
2010
- 2010-05-05 EP EP10161984.9A patent/EP2261968B1/en not_active Not-in-force
- 2010-05-19 US US12/782,889 patent/US8350300B2/en not_active Expired - Fee Related
- 2010-06-03 CN CN201010196500.9A patent/CN101908525B/zh not_active Expired - Fee Related
-
2012
- 2012-12-07 US US13/707,887 patent/US8748210B2/en not_active Expired - Fee Related