JP2010235633A5 - - Google Patents

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JP2010235633A5
JP2010235633A5 JP2010158413A JP2010158413A JP2010235633A5 JP 2010235633 A5 JP2010235633 A5 JP 2010235633A5 JP 2010158413 A JP2010158413 A JP 2010158413A JP 2010158413 A JP2010158413 A JP 2010158413A JP 2010235633 A5 JP2010235633 A5 JP 2010235633A5
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Claims (4)

  1. 式ＩＩＡまたはＩＩＢ：
    Figure 2010235633
     （式中、Ｒ１およびＲ２は独立に、メチル、エチルおよびプロピルから選択される；各Ｒ３は独立に、（Ｃ１−Ｃ ６ ）アルキル、（Ｃ ２ −Ｃ ４ ）アルケニルおよび（Ｃ ６ −Ｃ １０ ）アリールから選択される；各Ｒ４は独立に、分岐および環状（Ｃ３−Ｃ５）アルキルから選択される；各Ｒ５は独立に、（Ｃ１−Ｃ ６ ）アルキル、（Ｃ ２ −Ｃ ４ ）アルケニルおよび（Ｃ ６ −Ｃ １０ ）アリールから選択される；Ｘはハロゲンである；ａ’＝０〜２；ｂ’＝１〜２；ｃ’＝１〜３；ｄ’＝０〜２；ａ’＋ｂ’＋ｃ’＋ｄ’＝４；ａ”＝０〜２；ｂ”＝０〜２；ｅ”＝１〜２；ｆ”＝０〜２；ａ”＋ｂ”＋ｅ”＋ｆ”＝４であり；ａ”、ｂ”およびｆ”のうちの少なくとも２つが０ではなく；ただしａ”＝１、ｅ”＝１、ｆ”＝２、およびＲ４が（ＣＨ３） ３ Ｃである場合、Ｒ５≠ＣＨ３とする）
    の化合物。
  2. Ｒ３が分岐または環状（Ｃ３−Ｃ５）アルキルである請求項１記載の化合物。
  3. ｅ”＝１〜２であり；ｆ”＝１〜２であり；およびｂ”＝１〜２である請求項１記載の化合物。
  4. 基体上にゲルマニウムを含む金属フィルムを堆積させる方法であって、ａ）基体を含む堆積チャンバーに気相中の請求項１記載の有機金属化合物を輸送する工程；ｂ）有機金属化合物を堆積チャンバー中で分解する工程；およびｃ）ゲルマニウムを含む金属フィルムを基体上に堆積させる工程を含む方法。
JP2010158413A 2003-04-05 2010-07-13 有機金属化合物 Expired - Fee Related JP5460501B2 (ja)

Applications Claiming Priority (4)

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US46079103P 2003-04-05 2003-04-05
US60/460791 2003-04-05
US51347603P 2003-10-22 2003-10-22
US60/513476 2003-10-22

Related Parent Applications (1)

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JP2004099110A Division JP4954448B2 (ja) 2003-04-05 2004-03-30 有機金属化合物

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JP2010235633A JP2010235633A (ja) 2010-10-21
JP2010235633A5 true JP2010235633A5 (ja) 2013-04-04
JP5460501B2 JP5460501B2 (ja) 2014-04-02

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US (2) US7413776B2 (ja)
EP (2) EP1990345B1 (ja)
JP (2) JP4954448B2 (ja)
KR (2) KR101200524B1 (ja)
CN (1) CN100516289C (ja)
DE (2) DE602004018219D1 (ja)
SG (1) SG126757A1 (ja)
TW (1) TWI318222B (ja)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4714422B2 (ja) * 2003-04-05 2011-06-29 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． ゲルマニウムを含有するフィルムを堆積させる方法、及び蒸気送達装置
US20060172068A1 (en) * 2005-01-28 2006-08-03 Ovshinsky Stanford R Deposition of multilayer structures including layers of germanium and/or germanium alloys
KR20080101893A (ko) * 2006-02-08 2008-11-21 제이에스알 가부시끼가이샤 금속막의 형성 방법
JP4957037B2 (ja) * 2006-03-24 2012-06-20 東ソー株式会社 有機シラン化合物、それを含むＳｉ含有膜形成材料、製造方法および用途
US8895484B2 (en) 2006-06-20 2014-11-25 Restrack As Use of biphenyl, terphenyl, and fluorene sulphonic acid based tracers for monitoring streams of fluids
US8318966B2 (en) * 2006-06-23 2012-11-27 Praxair Technology, Inc. Organometallic compounds
KR100757415B1 (ko) 2006-07-13 2007-09-10 삼성전자주식회사 게르마늄 화합물 및 그 제조 방법, 상기 게르마늄 화합물을이용한 상변화 메모리 장치 및 그 형성 방법
TWI370107B (en) * 2007-04-02 2012-08-11 Univ Arizona Novel methods for making and using halosilylgermanes
US20080312356A1 (en) * 2007-06-13 2008-12-18 Applied Mcrostructures, Inc. Vapor-deposited biocompatible coatings which adhere to various plastics and metal
TWI471449B (zh) 2007-09-17 2015-02-01 Air Liquide 用於ｇｓｔ膜沈積之碲前驅物
US20090162973A1 (en) * 2007-12-21 2009-06-25 Julien Gatineau Germanium precursors for gst film deposition
KR100960355B1 (ko) * 2008-03-05 2010-05-28 한화케미칼 주식회사 수소 저장 물질로서 유기-전이 금속 하이드라이드의 개선된제조 방법
US8101237B2 (en) 2008-05-29 2012-01-24 L'Air Liquide SociétéAnonyme pour I'Etude et I'Exploitation des Procédés Georges Claude Tellurium precursors for film deposition
US8802194B2 (en) 2008-05-29 2014-08-12 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Tellurium precursors for film deposition
US8636845B2 (en) 2008-06-25 2014-01-28 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal heterocyclic compounds for deposition of thin films
US8236381B2 (en) 2008-08-08 2012-08-07 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Metal piperidinate and metal pyridinate precursors for thin film deposition
KR100984718B1 (ko) * 2008-08-11 2010-10-01 한화케미칼 주식회사 수소 저장물질로써 아릴 또는 알킬을 포함하는 유기-전이 금속 하이드라이드의 보다 개선된 제조방법
JP5547418B2 (ja) * 2009-03-19 2014-07-16 株式会社Ａｄｅｋａ 化学気相成長用原料及びこれを用いたシリコン含有薄膜形成方法
JP2011054935A (ja) * 2009-06-19 2011-03-17 Rohm & Haas Electronic Materials Llc ドーピング方法
JP2011009479A (ja) * 2009-06-26 2011-01-13 Gas-Phase Growth Ltd 膜形成材料、膜形成方法、及び素子
WO2011027321A1 (en) 2009-09-02 2011-03-10 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Dihalide germanium(ii) precursors for germanium-containing film depositions
WO2011095849A1 (en) 2010-02-03 2011-08-11 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Chalcogenide-containing precursors, methods of making, and methods of using the same for thin film deposition
US20120277457A1 (en) * 2010-10-12 2012-11-01 Air Products And Chemicals, Inc. Aminosilanes and methods for making same
US9476144B2 (en) * 2011-03-28 2016-10-25 Applied Materials, Inc. Method and apparatus for the selective deposition of epitaxial germanium stressor alloys
JP6007662B2 (ja) 2011-09-05 2016-10-12 東ソー株式会社 成膜材料、それを用いた封止膜、及びその用途
US8993072B2 (en) 2011-09-27 2015-03-31 Air Products And Chemicals, Inc. Halogenated organoaminosilane precursors and methods for depositing films comprising same
JP2012142586A (ja) * 2012-02-20 2012-07-26 Gas-Phase Growth Ltd 膜形成材料および膜形成方法
JP5780981B2 (ja) * 2012-03-02 2015-09-16 東京エレクトロン株式会社 ゲルマニウム薄膜の成膜方法
WO2013151623A2 (en) * 2012-04-05 2013-10-10 Dow Corning Corporation A method for preparing an organofunctional compound
US9214630B2 (en) 2013-04-11 2015-12-15 Air Products And Chemicals, Inc. Method of making a multicomponent film
KR102326396B1 (ko) 2013-09-27 2021-11-12 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 아민 치환된 트리실릴아민 및 트리디실릴아민 화합물
KR101720017B1 (ko) * 2014-01-08 2017-03-27 (주)디엔에프 신규한 트리실릴아민 유도체, 이의 제조방법 및 이를 이용한 실리콘 함유 박막
KR101659610B1 (ko) * 2014-03-18 2016-09-23 주식회사 유진테크 머티리얼즈 유기 게르마늄 아민 화합물 및 이를 이용한 박막 증착 방법
US10464953B2 (en) * 2016-10-14 2019-11-05 Versum Materials Us, Llc Carbon bridged aminosilane compounds for high growth rate silicon-containing films
EP3413334B1 (de) * 2017-06-01 2020-09-09 Evonik Operations GmbH Neue chlorsilylarylgermane, verfahren zu deren herstellung und deren verwendung
KR102364476B1 (ko) * 2020-05-08 2022-02-18 주식회사 한솔케미칼 실리콘 전구체 및 이를 이용한 실리콘 함유 박막의 제조방법
US20230287562A1 (en) * 2020-07-24 2023-09-14 Versum Materials Us, Llc Compositions nd methods using same for germanium seed layer
CA3232397A1 (en) * 2021-09-10 2023-03-16 The Regents Of The University Of Michigan Gas-assisted cocrystal de-sublimation

Family Cites Families (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US549108A (en) * 1895-11-05 Machine for manufacturing lacing-studs
US111013A (en) * 1871-01-17 Improvement in machines for making spikes
US82300A (en) * 1868-09-22 Improved oak-spring
US2444270A (en) * 1946-04-16 1948-06-29 Gen Electric Method of preparing organogermanium halides
GB626398A (en) 1946-04-16 1949-07-14 British Thomson Houston Co Ltd Improvements in and relating to methods of preparing organogermanium halides
US3442921A (en) * 1964-10-21 1969-05-06 Monsanto Co Process for the preparation of tetraorgano germanes
US3470220A (en) * 1965-08-19 1969-09-30 Monsanto Co Germanium and tin compounds
US3446824A (en) * 1965-12-10 1969-05-27 Monsanto Co Direct process for the preparation of organogermanium halides
US3935040A (en) * 1971-10-20 1976-01-27 Harris Corporation Process for forming monolithic semiconductor display
DE2212295C3 (de) 1972-03-14 1975-04-17 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung von Silicium- oder Germanium-Epitaxialschichten
US3985590A (en) * 1973-06-13 1976-10-12 Harris Corporation Process for forming heteroepitaxial structure
US4506815A (en) 1982-12-09 1985-03-26 Thiokol Corporation Bubbler cylinder and dip tube device
DE3567871D1 (en) * 1984-03-26 1989-03-02 Secr Defence Brit The preparation of metal alkyls
US4812586A (en) * 1985-04-09 1989-03-14 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Preparation of Group II metal alkyls
JPS61281869A (ja) * 1985-06-07 1986-12-12 Canon Inc 堆積膜形成法
JPS62136871A (ja) * 1985-12-11 1987-06-19 Canon Inc 光センサ−、その製造方法及びその製造装置
JPH084070B2 (ja) * 1985-12-28 1996-01-17 キヤノン株式会社 薄膜半導体素子及びその形成法
US4681640A (en) * 1986-08-06 1987-07-21 The United States Of America As Represented By The Secretary Of The Army Laser-induced chemical vapor deposition of germanium and doped-germanium films
US4877651A (en) * 1988-05-31 1989-10-31 Olin Corporation Process for thermally depositing silicon nitride and silicon dioxide films onto a substrate
JPH02225399A (ja) 1988-11-11 1990-09-07 Fujitsu Ltd エピタキシャル成長方法および成長装置
JPH02208925A (ja) * 1989-02-09 1990-08-20 Nippon Telegr & Teleph Corp <Ntt> 半導体膜の形成方法
EP0420596B1 (en) 1989-09-26 1996-06-19 Canon Kabushiki Kaisha Gas feeding device and deposition film forming apparatus employing the same
US5316958A (en) * 1990-05-31 1994-05-31 International Business Machines Corporation Method of dopant enhancement in an epitaxial silicon layer by using germanium
US5840897A (en) * 1990-07-06 1998-11-24 Advanced Technology Materials, Inc. Metal complex source reagents for chemical vapor deposition
JPH04151839A (ja) * 1990-10-16 1992-05-25 Kawasaki Steel Corp シリコンオキシナイトライド膜の製造方法
US5259918A (en) * 1991-06-12 1993-11-09 International Business Machines Corporation Heteroepitaxial growth of germanium on silicon by UHV/CVD
US5344948A (en) * 1992-02-25 1994-09-06 Iowa State University Research Foundation, Inc. Single-source molecular organic chemical vapor deposition agents and use
JPH05259089A (ja) * 1992-03-11 1993-10-08 Fujitsu Ltd 半導体結晶の製造方法
US5459108A (en) * 1992-10-06 1995-10-17 Sharp Kabushiki Kaisha Normal pressure CVD process for manufacture of a semiconductor device through reaction of a nitrogen containing organic source with ozone
JP2684942B2 (ja) * 1992-11-30 1997-12-03 日本電気株式会社 化学気相成長法と化学気相成長装置および多層配線の製造方法
US5502227A (en) 1993-07-27 1996-03-26 Cvd, Incorporated Liquid indium source
FR2722781A1 (fr) * 1994-07-20 1996-01-26 Inst National Polytech Inpt Procede pour realiser la synthese d'un ou de composes organiques ou organometalliques et applications notamment aux reactions d'aclation, reactions de redistribution et reactions pericycliques
US5489550A (en) * 1994-08-09 1996-02-06 Texas Instruments Incorporated Gas-phase doping method using germanium-containing additive
US5924012A (en) * 1996-10-02 1999-07-13 Micron Technology, Inc. Methods, complexes, and system for forming metal-containing films
US5874368A (en) * 1997-10-02 1999-02-23 Air Products And Chemicals, Inc. Silicon nitride from bis(tertiarybutylamino)silane
US6136725A (en) * 1998-04-14 2000-10-24 Cvd Systems, Inc. Method for chemical vapor deposition of a material on a substrate
US6159855A (en) * 1998-04-28 2000-12-12 Micron Technology, Inc. Organometallic compound mixtures in chemical vapor deposition
US5976991A (en) * 1998-06-11 1999-11-02 Air Products And Chemicals, Inc. Deposition of silicon dioxide and silicon oxynitride using bis(tertiarybutylamino) silane
US6365231B2 (en) * 1998-06-26 2002-04-02 Kabushiki Kaisha Toshiba Ammonium halide eliminator, chemical vapor deposition system and chemical vapor deposition process
US6214729B1 (en) * 1998-09-01 2001-04-10 Micron Technology, Inc. Metal complexes with chelating C-, N-donor ligands for forming metal-containing films
JP3379100B2 (ja) * 1998-09-04 2003-02-17 日本電気株式会社 シングルダマシン構造の埋め込み配線及びその形成方法
FR2783254B1 (fr) * 1998-09-10 2000-11-10 France Telecom Procede d'obtention d'une couche de germanium monocristallin sur un substrat de silicium monocristallin,et produits obtenus
US6099903A (en) * 1999-05-19 2000-08-08 Research Foundation Of State University Of New York MOCVD processes using precursors based on organometalloid ligands
US6184403B1 (en) * 1999-05-19 2001-02-06 Research Foundation Of State University Of New York MOCVD precursors based on organometalloid ligands
US6153261A (en) * 1999-05-28 2000-11-28 Applied Materials, Inc. Dielectric film deposition employing a bistertiarybutylaminesilane precursor
US6492711B1 (en) * 1999-06-22 2002-12-10 Matsushita Electric Industrial Co., Ltd. Heterojunction bipolar transistor and method for fabricating the same
US6238734B1 (en) * 1999-07-08 2001-05-29 Air Products And Chemicals, Inc. Liquid precursor mixtures for deposition of multicomponent metal containing materials
US6444038B1 (en) 1999-12-27 2002-09-03 Morton International, Inc. Dual fritted bubbler
US7041170B2 (en) * 1999-09-20 2006-05-09 Amberwave Systems Corporation Method of producing high quality relaxed silicon germanium layers
JP2002128787A (ja) * 1999-12-15 2002-05-09 Mitsubishi Materials Corp 有機銅化合物及び該化合物を含む混合液並びにそれを用いて作製された銅薄膜
US6589329B1 (en) * 2000-03-09 2003-07-08 Advanced Technology Materials, Inc. Composition and process for production of copper circuitry in microelectronic device structures
WO2001068580A1 (fr) * 2000-03-14 2001-09-20 Nissan Chemical Industries, Ltd. COMPLEXE β-DICETONATOCUIVRE(I) CONTENANT UN COMPOSE ALLENE EN LIGAND ET PROCEDE DE PRODUCTION
DE60106675T2 (de) 2000-05-31 2005-12-01 Shipley Co., L.L.C., Marlborough Verdampfer
US6514886B1 (en) * 2000-09-22 2003-02-04 Newport Fab, Llc Method for elimination of contaminants prior to epitaxy
EP1327010B1 (en) * 2000-09-28 2013-12-04 President and Fellows of Harvard College Vapor deposition of silicates
JP3998408B2 (ja) * 2000-09-29 2007-10-24 株式会社東芝 半導体装置及びその製造方法
US6500772B2 (en) * 2001-01-08 2002-12-31 International Business Machines Corporation Methods and materials for depositing films on semiconductor substrates
US20020127883A1 (en) * 2001-01-09 2002-09-12 Conti Richard A. Bis (tertiarybutylamino) silane and ozone based doped and undoped oxides
WO2002080244A2 (en) 2001-02-12 2002-10-10 Asm America, Inc. Improved process for deposition of semiconductor films
US7084080B2 (en) * 2001-03-30 2006-08-01 Advanced Technology Materials, Inc. Silicon source reagent compositions, and method of making and using same for microelectronic device structure
US7005392B2 (en) * 2001-03-30 2006-02-28 Advanced Technology Materials, Inc. Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same
US6391803B1 (en) * 2001-06-20 2002-05-21 Samsung Electronics Co., Ltd. Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane
US20030111013A1 (en) 2001-12-19 2003-06-19 Oosterlaken Theodorus Gerardus Maria Method for the deposition of silicon germanium layers
AU2002950405A0 (en) 2002-07-26 2002-09-12 Chirogen Pty Limited Chemical methods
JP5288707B2 (ja) * 2003-03-12 2013-09-11 エーエスエム アメリカ インコーポレイテッド シリコンゲルマニウムの、平坦化及び欠陥密度を減少させる方法
JP4689969B2 (ja) * 2003-04-05 2011-06-01 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． Ｉｖａ族およびｖｉａ族化合物の調製
JP4714422B2 (ja) * 2003-04-05 2011-06-29 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． ゲルマニウムを含有するフィルムを堆積させる方法、及び蒸気送達装置
US20060172068A1 (en) * 2005-01-28 2006-08-03 Ovshinsky Stanford R Deposition of multilayer structures including layers of germanium and/or germanium alloys

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